AP2531GY - Advanced Power Electronics Corp

AP2531GY
RoHS-compliant Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Low Gate Charge Drive
▼ Low On-resistance
N-CH BVDSS
D2
S1
RDS(ON)
D1
▼ Surface Mount Package
58mΩ
ID
G2
SOT-26
16V
S2
3.5A
P-CH BVDSS
G1
-16V
RDS(ON)
125mΩ
ID
Description
-2.5A
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
D2
D1
The SOT-26 package is widely used for all commercial-industrial
applications.
G1
G2
S2
S1
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Units
P-channel
16
-16
V
+8
+8
V
Continuous Drain Current
3
3.5
-2.5
A
[email protected]=70℃
Continuous Drain Current
3
2.8
-2
A
IDM
Pulsed Drain Current
10
-10
A
[email protected]=25℃
Total Power Dissipation
1.14
W
Linear Derating Factor
0.01
W/℃
[email protected]=25℃
1
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
110
℃/W
1
201006094
AP2531GY
o
N-CH Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
16
-
-
V
-
0.01
-
V/℃
VGS=4.5V, ID=3A
-
-
58
mΩ
VGS=2.5V, ID=2A
-
-
70
mΩ
VGS=1.8V, ID=1A
-
-
85
mΩ
0.2
-
1
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=5V, ID=3A
-
9
-
S
IDSS
Drain-Source Leakage Current
VDS=16V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=12V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=+8V
-
-
+100
nA
ID=3A
-
7
12
nC
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=10V
-
0.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
2
-
nC
2
td(on)
Turn-on Delay Time
VDS=10V
-
6
-
ns
tr
Rise Time
ID=1A
-
11
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
17
-
ns
tf
Fall Time
RD=10Ω
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
365
585
pF
Coss
Output Capacitance
VDS=10V
-
70
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
60
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.4
2
Ω
Min.
Typ.
-
-
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
Test Conditions
IS=0.9A, VGS=0V
Max. Units
1.3
V
2
AP2531GY
P-CH Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
-16
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-
0.01
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-2A
-
-
125
mΩ
VGS=-2.5V, ID=-1.6A
-
-
165
mΩ
VGS=-1.8V, ID=-1A
-
-
210
mΩ
-0.2
-
-1
V
VGS=0V, ID=-250uA
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
gfs
Forward Transconductance
VDS=-5V, ID=-2A
-
5
-
S
IDSS
Drain-Source Leakage Current
VDS=-16V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70 C)
VDS=-12V ,VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=+8V
-
-
+100
nA
o
IGSS
2
Qg
Total Gate Charge
ID=-2A
-
6
10
nC
Qgs
Gate-Source Charge
VDS=-10V
-
0.8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
2
-
nC
VDS=-10V
-
7
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
20
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-5V
-
23
-
ns
tf
Fall Time
RD=10Ω
-
24
-
ns
Ciss
Input Capacitance
VGS=0V
-
380
610
pF
Coss
Output Capacitance
VDS=-10V
-
90
-
pF
Crss
Rg
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
Gate Resistance
f=1.0MHz
-
8
12
Ω
Min.
Typ.
Max.
Unit
-
-
-1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
Test Conditions
IS=-0.9A, VGS=0V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t<5sec ; 180℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP2531GY
N-Channel
10
10
T A =25 C
6
4
V G = 1.0 V
2
5.0 V
4.5 V
2.5 V
1.8 V
T A = 150 o C
8
ID , Drain Current (A)
o
8
ID , Drain Current (A)
5.0 V
4.5 V
2.5 V
1.8 V
6
4
V G = 1.0 V
2
0
0
0
1
2
3
4
0
1
V DS , Drain-to-Source Voltage (V)
2
3
4
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
320
I D =3A
V G =10V
ID=2A
RDS(ON) (mΩ )
220
Normalized RDS(ON)
T A =25 o C
120
1.4
1.0
0.6
20
0
2
4
6
-50
8
0
V GS , Gate-to-Source Voltage (V)
50
100
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
Normalized VGS(th) (V)
3
IS(A)
2
T j =150 o C
T j =25 o C
1
1.5
1.0
0.5
0
0.0
0
0.2
0.4
0.6
0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP2531GY
N-Channel
f=1.0MHz
1000
ID=3A
V DS = 10 V
9
C iss
C (pF)
VGS , Gate to Source Voltage (V)
12
6
100
C oss
C rss
3
10
0
0
5
10
1
15
5
Fig 7. Gate Charge Characteristics
13
17
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthja)
1
10
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
100us
1ms
1
10ms
100ms
1s
DC
0.1
o
T A =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
PDM
t
T
0.05
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 180℃/W
0.02
0.01
Single Pulse
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
10
VG
V DS =5V
ID , Drain Current (A)
8
T j =25 o C
QG
T j =150 o C
4.5V
6
QGS
QGD
4
2
Charge
Q
0
0
1
2
3
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5
AP2531GY
P-Channel
10
10
-5.0 V
- 4.5 V
- 2.5 V
-ID , Drain Current (A)
8
o
T A = 150 C
6
-1.8 V
4
2
- 5.0 V
- 4.5 V
- 2.5 V
8
-ID , Drain Current (A)
o
T A = 25 C
6
- 1.8 V
4
2
V G = - 1.0 V
V G = - 1.0 V
0
0
0
2
4
0
6
2
4
6
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
550
I D = -1 .6 A
I D = -2 A
V G = -10 V
T A =25 o C
Normalized RDS(ON)
RDS(ON) (mΩ)
450
350
250
1.4
1.0
150
0.6
50
0
2
4
6
-50
8
-V GS , Gate-to-Source Voltage (V)
100
150
T j , Junction Temperature ( C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
2.0
1.5
1.5
Normalized -VGS(th) (V)
-IS(A)
50
o
Fig 3. On-Resistance v.s. Gate Voltage
1.0
T j =150 o C
0
T j =25 o C
0.5
1.0
0.5
0.0
0.0
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP2531GY
P-Channel
f=1.0MHz
1000
I D =-2A
V DS =-10V
C iss
9
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
100
C oss
C rss
3
10
0
0
3
6
9
1
12
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
100
10
100us
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
1ms
1
10ms
100ms
0.1
o
T A =25 C
Single Pulse
1s
DC
Duty factor=0.5
0.2
0.1
0.1
PDM
t
T
0.05
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.01
Rthja = 180℃/W
0.2
Single Pulse
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
10
VG
V DS =-5V
-ID , Drain Current (A)
8
T j =25 o C
6
QG
T j =150 o C
-4.5V
QGS
QGD
4
2
Charge
Q
0
0
1
2
3
4
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
7