AP4506GEH (MN0326-ES03+MN0327-EA01)

AP4506GEH
RoHS-compliant Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
D1/D2
30V
RDS(ON)
▼ Good Thermal Performance
ID
▼ Fast Switching Performance
S1
24mΩ
G1
S2
9A
P-CH BVDSS
G2
-30V
RDS(ON)
TO-252-4L
36mΩ
ID
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
-8A
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Units
P-channel
30
-30
V
+20
+20
V
Continuous Drain Current
3
9
-8
A
Continuous Drain Current
3
7.2
-6.4
A
50
-50
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
TSTG
TJ
3.1
W
Storage Temperature Range
-55 to 150
℃
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
8
℃/W
40
℃/W
1
200902103
AP4506GEH
o
N-CH Electrical [email protected]=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
30
-
-
V
VGS=10V, ID=6A
-
-
24
mΩ
VGS=4.5V, ID=4A
-
-
32
mΩ
VGS=0V, ID=250uA
Static Drain-Source On-Resistance
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=6A
-
17
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (T j=70 C) VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+30
uA
ID=6A
-
8.3
13
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4
-
nC
2
td(on)
Turn-on Delay Time
VDS=15V
-
5
-
ns
tr
Rise Time
ID=6A
-
18
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
18
-
ns
tf
Fall Time
RD=2.5Ω
-
4
-
ns
Ciss
Input Capacitance
VGS=0V
-
575
920
pF
Coss
Output Capacitance
VDS=25V
-
100
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
70
-
pF
Min.
Typ.
IS=6A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=6A, VGS=0V
-
19
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
14
-
nC
2
AP4506GEH
o
P-CH Electrical [email protected]=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
-30
-
-
V
VGS=-10V, ID=-5A
-
-
36
mΩ
VGS=-4.5V, ID=-3A
-
-
48
mΩ
VGS=0V, ID=-250uA
Static Drain-Source On-Resistance
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-5A
-
12
-
S
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
-
-
-10
uA
Drain-Source Leakage Current (T j=70 C) VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+30
uA
ID=-5A
-
12.6
20
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
2.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
6.2
-
nC
2
td(on)
Turn-on Delay Time
VDS=-15V
-
8
-
ns
tr
Rise Time
ID=-5A
-
16
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
26
-
ns
tf
Fall Time
RD=3Ω
-
41
-
ns
Ciss
Input Capacitance
VGS=0V
-
1045 1670
pF
Coss
Output Capacitance
VDS=-25V
-
220
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
150
-
pF
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Min.
Typ.
IS=-5A, VGS=0V
Test Conditions
-
-
Max. Units
-1.3
V
trr
Reverse Recovery Time
IS=-5A, VGS=0V
-
23
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
15
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.N-CH , P-CH are same , mounted on 2oz FR4 board t ≦10s.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP4506GEH
N-Channel
50
50
10V
7.0V
5.0V
4.5V
o
40
ID , Drain Current (A)
40
ID , Drain Current (A)
T C = 150 C
10V
7.0V
5.0V
4.5V
o
T C = 25 C
30
20
V G =3.0V
30
V G =3.0V
20
10
10
0
0
0
1
2
3
4
5
0
2
4
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
28
I D =4A
T C =25 o C
I D =6A
V G =10V
1.6
Normalized RDS(ON)
RDS(ON) (mΩ)
26
24
22
1.4
1.2
1.0
20
0.8
0.6
18
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
10
IS(A)
T j =150 o C
Normalized VGS(th) (V)
8
T j =25 o C
6
4
1.2
0.8
2
0.4
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP4506GEH
N-Channel
f=1.0MHz
1000
C iss
I D =6A
V DS =24V
8
C (pF)
VGS , Gate to Source Voltage (V)
12
C oss
100
C rss
4
0
10
0
5
10
15
20
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
10
100us
1
1ms
10ms
100ms
Normalized Thermal Response (Rthja)
ID (A)
Duty factor=0.5
1s
0.1
T A =25 o C
Single Pulse
DC
0.01
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.01
Rthja=75℃/W
Single Pulse
0.01
0.1
1
10
100
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
5
AP4506GEH
P-Channel
50
50
T C = 25 o C
30
20
V G = - 3.0V
30
20
V G = - 3.0V
10
10
0
0
0
1
2
3
4
0
5
1
-V DS , Drain-to-Source Voltage (V)
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
45
1.6
I D =-5A
V G =-10V
I D =-3A
T C =25 o C
1.4
Normalized RDS(ON)
41
RDS(ON) (mΩ)
-10V
-7.0V
-5.0V
-4.5V
40
-ID , Drain Current (A)
40
-ID , Drain Current (A)
o
T C = 150 C
-10V
-7.0V
-5.0V
-4.5V
37
33
1.2
1.0
0.8
29
0.6
25
2
4
6
8
-50
10
0
50
100
150
o
-V GS ,Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
10
T j =150 o C
Normalized -VGS(th) (V)
8
T j =25 o C
-IS(A)
6
4
1.2
0.8
2
0
0.4
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP4506GEH
P-Channel
f=1.0MHz
10000
10
I D = -5A
V DS = -24V
8
C iss
1000
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
4
C oss
C rss
100
2
0
10
0
5
10
15
20
25
1
30
5
9
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
100
100us
10
-ID (A)
13
-V DS , Drain-to-Source Voltage (V)
1ms
10ms
100ms
1
1s
0.1
DC
T A =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=75℃/W
0.01
0.01
0.1
1
10
100
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.1
1
10
100
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
7