AP9435GH/J
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching
G
BVDSS
-30V
RDS(ON)
50mΩ
ID
- 20A
S
Description
G
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device.
D
S
TO-252(H)
The TO-252/TO-251 package is widely used for commercial-industrial
application.
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
- 30
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current
- 20
A
ID@TC=100℃
Continuous Drain Current
-13
A
1
IDM
Pulsed Drain Current
-60
A
PD@TC=25℃
Total Power Dissipation
12.5
W
Linear Derating Factor
0.1
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
3
Value
Units
10
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
62.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data and specifications subject to change without notice
1
200902256
AP9435GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-30
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-10A
-
-
50
mΩ
VGS=-4.5V, ID=-5A
-
-
90
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-10A
-
10
-
S
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (T j=125 C) VDS=-24V, VGS=0V
-
-
-250
uA
Gate-Source Leakage
VGS=+ 20V, VDS=0V
-
-
+100
nA
ID=-10A
-
8
16
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
1.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
4.3
-
nC
VDS=-15V
-
6.3
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-10A
-
46
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
20
-
ns
tf
Fall Time
RD=1.5Ω
-
7.4
-
ns
Ciss
Input Capacitance
VGS=0V
-
570
740
pF
Coss
Output Capacitance
VDS=-25V
-
80
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
Min.
Typ.
IS=-5A, VGS=0V
-
-
-1.3
V
IS=-10A, VGS=0V,
-
18
-
ns
dI/dt=-100A/µs
-
10
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9435GH/J
70
80
T C =25 o C
-10V
o
T C =150 C
-8.0V
60
-ID , Drain Current (A)
-ID , Drain Current (A)
60
-6.0V
40
-4.5V
20
-10V
50
-8.0V
40
-6.0V
30
-4.5V
20
V G =-4.0V
V G =-4.0V
10
0
0
0
2
4
6
8
10
0
Fig 1. Typical Output Characteristics
4
6
8
Fig 2. Typical Output Characteristics
1.8
90
I D =-10A
T C =25 ℃
I D = -10A
V G =-10V
1.6
Normalized RDS(ON)
80
RDS(ON) (mΩ)
2
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
70
60
1.4
1.2
50
1.0
40
0.8
30
0.6
2
4
6
8
-50
10
-V GS , Gate-to-Source Voltage (V)
100
150
T j , Junction Temperature ( C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
8
1.8
-VGS(th) (V)
10
6
-IS(A)
50
o
Fig 3. On-Resistance v.s. Gate Voltage
T j =150 o C
0
T j =25 o C
4
2
1.6
1.4
1.2
0
1
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9435GH/J
f=1.0MHz
1000
I D =-10A
V DS =-24V
10
Ciss
8
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
100
Coss
Crss
4
2
0
10
0
4
8
12
16
20
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
10
-ID(A)
100us
1ms
10ms
100ms
DC
1
o
T C =25 C
Single Pulse
Normalized Thermal Response (Rthjc)
100
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4