AP2302GN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 2.5V gate drive
▼ Small package outline
D
BVDSS
20V
RDS(ON)
85mΩ
ID
▼ Surface mount package
▼ RoHS Compliant
3.2A
S
SOT-23
Description
G
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
D
G
S
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
20
V
+12
V
3
3.2
A
3
2.6
A
10
A
Continuous Drain Current , VGS @ 4.5V
Continuous Drain Current , VGS @ 4.5V
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
1.38
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
90
℃/W
1
200902046
AP2302GN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
20
-
-
V
-
0.1
-
V/℃
VGS=4.5V, ID=3.6A
-
-
85
mΩ
VGS=2.5V, ID=3.1A
-
-
115
mΩ
0.5
-
1.2
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
VGS=0V, ID=250uA
Static Drain-Source On-Resistance
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=5V, ID=3.6A
-
6
-
S
IDSS
Drain-Source Leakage Current
VDS=20V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=20V ,VGS=0V
-
-
10
uA
Gate-Source Leakage
VGS=+12V, VDS=0V
-
-
+100
nA
ID=3.6A
-
4.4
-
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=10V
-
0.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
1.9
-
nC
VDS=10V
-
5.2
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=3.6A
-
37
-
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=5V
-
15
-
ns
tf
Fall Time
RD=2.8Ω
-
5.7
-
ns
Ciss
Input Capacitance
VGS=0V
-
145
-
pF
Coss
Output Capacitance
VDS=10V
-
100
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Rg
Gate Resistance
f=1.0MHz
-
5.3
8
Ω
Min.
Typ.
-
-
1
A
-
-
10
A
-
-
1.2
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.2V
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
1
2
Forward On Voltage
IS=1.6A, VGS=0V
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2302GN-HF
10
6
o
o
T A =25 C
5
ID , Drain Current (A)
8
ID , Drain Current (A)
T A =150 C
4.5V
3.5V
3.0V
2.5V
6
4
V G =2.0V
4.5V
3.5V
3.0V
2.5V
4
3
V G =2.0V
2
2
1
0
0
0.0
0.5
1.0
1.5
2.0
0.0
2.5
V DS , Drain-to-Source Voltage (V)
1.0
1.5
2.0
2.5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
1.8
I D =3.6A
I D = 3.1 A
1.6
o
Normalized RDS(ON)
T A =25 C
90
RDS(ON) (mΩ)
0.5
80
V G =4.5V
1.4
1.2
1.0
70
0.8
0.6
60
2
3
4
-50
5
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
1.4
10.0
VGS(th) (V)
IS (A)
1.0
1.0
o
T j =150 C
T j =25 o C
0.6
0.1
0.2
0.1
0.5
0.9
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.3
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2302GN-HF
12
f=1.0MHz
1000
I D =3.6A
V DS =10V
8
C (pF)
VGS , Gate to Source Voltage (V)
10
6
C iss
100
C oss
4
C rss
2
10
0
0
2
4
6
8
1
10
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthja)
1
10
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
1ms
1
10ms
100ms
0.1
o
T A =25 C
Single Pulse
1s
DC
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.01
T
0.01
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 270℃/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4