AP2332GEN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Small Package Outline
▼ Surface Mount Device
S
▼ Halogen Free & RoHS Compliant Product
SOT-23
BVDSS
600V
RDS(ON)
72Ω
ID
51mA
G
D
Description
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The special design SOT-23 package with good thermal performance
is widely preferred for all commercial-industrial surface mount
applications using infrared reflow technique and suited for voltage
conversion or switch applications.
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
Rating
Units
600
V
+32
V
3
51
mA
3
Continuous Drain Current , VGS @ 10V
ID@TA=70℃
Continuous Drain Current , VGS @ 10V
41
mA
ID@TA=70℃
Continuous Drain Current4, VGS @ 10V
68
mA
1
IDM
Pulsed Drain Current
300
mA
PD@TA=25℃
Total Power Dissipation
0.5
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
250
℃/W
1
201212131
AP2332GEN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
600
-
-
V
VGS=10V, ID=60mA
-
-
72
Ω
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
5
V
gfs
Forward Transconductance
VDS=10V, ID=60mA
-
110
-
mS
IDSS
Drain-Source Leakage Current
VDS=480V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+32V, VDS=0V
-
-
+30
uA
Qg
Total Gate Charge2
ID=0.1A
-
2
3.2
nC
Qgs
Gate-Source Charge
VDS=200V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
0.3
-
nC
VDS=300V
-
10
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=60mA
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
15
-
ns
tf
Fall Time
VGS=10V
-
70
-
ns
Ciss
Input Capacitance
VGS=0V
-
40
64
pF
Coss
Output Capacitance
VDS=25V
-
13.5
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
3.5
-
pF
Min.
Typ.
-
-
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
Test Conditions
IS=0.05A, VGS=0V
Max. Units
1.5
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Mounted on min. copper pad FR4 board
4.Mounted on 1 in2 copper pad FR4 board t < 10s thermal resistance.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2332GEN-HF
60
40
o
ID , Drain Current (mA)
50
ID , Drain Current (mA)
o
10V
7.0V
6.0V
5.0V
V G = 4.0V
T A = 150 C
10V
7.0V
6.0V
5.0V
T A = 25 C
40
30
V G = 4.0V
20
30
20
10
10
0
0
0
2
4
6
8
0.0
2.0
4.0
6.0
8.0
10.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.3
2.8
I D =1mA
I D =60mA
V G =10V
2.4
Normalized RDS(ON)
Normalized BVDSS
1.2
1.1
1
2.0
1.6
1.2
0.9
0.8
0.4
0.8
-50
0
50
100
-50
150
o
0
50
100
150
T j , Junction Temperature ( o C)
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
2.0
1.0
I D =250uA
0.8
0.6
IS(A)
T j =150 o C
Normalized VGS(th)
1.5
T j =25 o C
0.4
1.0
0.5
0.2
0.0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2332GEN-HF
12
f=1.0MHz
100
80
8
C (pF)
VGS , Gate to Source Voltage (V)
I D =0.1A
V DS =200V
10
60
6
40
C iss
4
20
2
C oss
C rss
0
0
0
0.4
0.8
1.2
1.6
2
2.4
1
2.8
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1
ID (A)
100us
Operation in this area
limited by RDS(ON)
0.1
Normalized Thermal Response (Rthja)
Duty factor=0.5
1ms
10ms
0.01
100ms
1s
DC
0.001
o
T A =25 C
Single Pulse
0.2
0.1
0.1
0.05
0.02
PDM
t
0.01
T
0.01
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 250℃/W
0.001
0.0001
1
10
100
1000
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
80
ID , Drain Current (mA)
VG
60
QG
10V
QGS
40
QGD
20
Charge
Q
0
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 11. Maximum Continuous Drain
Current v.s. Ambient Temperature
Fig 12. Gate Charge Circuit
4