AP4525GEM

AP4525GEM
Pb Free Plating Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
D2
D2
▼ Low On-resistance
D1
RDS(ON)
D1
▼ Fast Switching Performance
G2
S2
▼ RoHS Compliant
SO-8
40V
S1
G1
28mΩ
ID
6A
P-CH BVDSS
-40V
RDS(ON)
42mΩ
ID
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design,low on-resistance and costeffectiveness.
-5A
D1
G1
D2
G2
The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Units
P-channel
40
-40
V
±16
±16
V
Continuous Drain Current
3
6.0
-5.0
A
Continuous Drain Current
3
5.0
-4.0
A
30
-30
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
2.0
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
62.5
℃/W
200725064-1/7
AP4525GEM
o
N-CH Electrical Characteristics@ Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
40
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.04
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=6A
-
-
28
mΩ
VGS=4.5V, ID=4A
-
-
32
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=6A
-
6
-
S
Drain-Source Leakage Current (Tj=25 C)
VDS=40V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70oC)
VDS=32V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±16V
-
-
±30
uA
ID=6A
-
8
13
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
o
IGSS
2
VGS=0V, ID=250uA
Min.
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4
-
nC
2
td(on)
Turn-on Delay Time
VDS=20V
-
7
-
ns
tr
Rise Time
ID=6A
-
20
-
ns
td(off)
Turn-off Delay Time
RG=3Ω,VGS=10V
-
20
-
ns
tf
Fall Time
RD=3.3Ω
-
4
-
ns
Ciss
Input Capacitance
VGS=0V
-
580
930
pF
Coss
Output Capacitance
VDS=25V
-
100
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
70
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2
3
Ω
Min.
Typ.
IS=1.1A, VGS=0V
-
-
1.8
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=6A, VGS=0V
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
12
-
nC
2/7
AP4525GEM
o
P-CH Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-40
-
-
V
-
-0.02
-
V/℃
VGS=-10V, ID=-5A
-
-
42
mΩ
VGS=-4.5V, ID=-3A
-
-
60
mΩ
-0.8
-
-2.5
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA
RDS(ON)
2
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
IGSS
VGS=0V, ID=-250uA
VDS=VGS, ID=-250uA
Max. Units
VDS=-10V, ID=-5A
-
5
-
S
o
VDS=-40V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-32V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±16V
-
-
±30
uA
Drain-Source Leakage Current (Tj=25 C)
2
Qg
Total Gate Charge
ID=-5A
-
9
24
nC
Qgs
Gate-Source Charge
VDS=-20V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
5
-
nC
VDS=-20V
-
8.5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-5A
-
15
-
ns
td(off)
Turn-off Delay Time
RG=3Ω,VGS=-10V
-
27
-
ns
tf
Fall Time
RD=4Ω
-
25
-
ns
Ciss
Input Capacitance
VGS=0V
-
770
1230
pF
Coss
Output Capacitance
VDS=-20V
-
165
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
115
-
pF
Rg
Gate Resistance
f=1.0MHz
-
6
9
Ω
Min.
Typ.
IS=-1.1A, VGS=0V
-
-
-1.8
V
IS=-5A, VGS=0V
-
20
-
ns
dI/dt=-100A/µs
-
16
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
Test Conditions
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 135℃/W when mounted on min. copper pad.
3/7
AP4525GEM
N-Channel
30
30
10V
7.0V
5.0V
4.5V
10V
7.0V
5.0V
4.5V
T A = 150 o C
ID , Drain Current (A)
ID , Drain Current (A)
T A = 25 o C
20
V G =3.0V
10
20
V G =3.0V
10
0
0
0
1
2
0
3
V DS , Drain-to-Source Voltage (V)
1
2
3
4
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
120
ID=6A
V G =10V
ID=4A
T A =25 o C
1.6
Normalized RDS(ON)
RDS(ON) (mΩ )
100
80
60
1.2
40
0.8
20
2
4
6
8
25
10
50
75
100
125
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
10
Normalized VGS(th) (V)
IS(A)
8
6
T j =150 o C
T j =25 o C
4
1.2
0.8
2
0.4
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4/7
AP4525GEM
N-Channel
f=1.0MHz
1000
C iss
I D =6A
V DS =20V
8
C (pF)
VGS , Gate to Source Voltage (V)
12
C oss
100
C rss
4
10
0
0
5
10
15
1
20
5
9
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
10
100us
1ms
1
10ms
100ms
T A =25 o C
Single Pulse
0.1
1s
DC
Normalized Thermal Response (Rthja)
100
ID (A)
13
V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja =135o C/W
Single Pulse
0.01
0.01
0.1
1
10
100
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
VG
V DS =5V
ID , Drain Current (A)
40
T j =25 o C
T j =150 o C
QG
4.5V
30
QGS
QGD
20
10
Charge
Q
0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5/7
AP4525GEM
P-Channel
30
30
-10V
-7.0V
-5.0V
-4.5V
20
V G = - 3.0V
10
20
V G = - 3.0V
10
0
0
0
1
2
3
4
0
5
1
-V DS , Drain-to-Source Voltage (V)
2
3
4
5
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
120
I D = -5A
V G = -10V
I D = -3 A
1.4
T A = 25 o C
90
Normalized RDS(ON)
RDS(ON) (mΩ)
-10V
-7.0V
-5.0V
-4.5V
o
T A = 150 C
-ID , Drain Current (A)
-ID , Drain Current (A)
T A = 25 o C
60
1.2
1.0
0.8
30
2
4
6
8
25
10
-V GS ,Gate-to-Source Voltage (V)
50
75
100
125
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
1.6
Normalized -VGS(th) (V)
8
6
-IS(A)
T j =150 o C
T j =25 o C
4
1.2
0.8
2
0
0.4
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6/7
AP4525GEM
P-Channel
f=1.0MHz
10000
I D = -5 A
V DS = - 2 0 V
8
1000
C iss
C (pF)
-VGS , Gate to Source Voltage (V)
12
4
C oss
C rss
100
0
10
0
4
8
12
16
20
1
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
100
100us
1ms
10
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
10ms
1
100ms
T c =25 o C
Single Pulse
0.1
1s
DC
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=135 oC/W
Single Pulse
0.01
0.01
0.1
1
10
100
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
o
-ID , Drain Current (A)
V DS = -5V
VG
o
T j =25 C
T j =150 C
QG
20
-4.5V
QGS
QGD
10
Charge
Q
0
0
2
4
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
7/7