AP1332GEU (MN0318-05) - Advanced Power Electronics Corp

AP1332GEU
RoHS-complaint Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Simple Gate Drive
▼ Small Package Outline
BVDSS
20V
RDS(ON)
600mΩ
ID
600mA
S
SOT-323 G
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, low on-resistance and costeffectiveness.
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Unit
20
V
+8
V
3
600
mA
3
470
mA
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
2.5
A
[email protected]=25℃
Total Power Dissipation
0.35
W
Linear Derating Factor
0.003
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
360
℃/W
1
201204255
AP1332GEU
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
20
-
-
V
-
0.02
-
V/℃
VGS=4.5V, ID=600mA
-
-
600
mΩ
VGS=2.5V, ID=300mA
-
-
2
Ω
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=250uA
2
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
0.5
-
1.25
V
gfs
Forward Transconductance
VDS=5V, ID=600mA
-
1
-
S
IDSS
Drain-Source Leakage Current
VDS=20V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=16V ,VGS=0V
-
-
10
uA
Gate-Source Leakage
VGS=+8V, VDS=0V
-
-
+30
uA
ID=600mA
-
1.3
2
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=16V
-
0.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
0.5
-
nC
VDS=10V
-
21
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=600mA
-
53
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
100
-
ns
tf
Fall Time
RD=16.7Ω
-
125
-
ns
Ciss
Input Capacitance
VGS=0V
-
38
60
pF
Coss
Output Capacitance
VDS=10V
-
17
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
12
-
pF
Min.
Typ.
Max.
Unit
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
Test Conditions
IS=300mA, VGS=0V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test.
3.Surface mounted on FR4 board, t ≦ 10 sec.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP1332GEU
2.5
2.5
5.0V
4.5V
3.5V
T A =25 C
ID , Drain Current (A)
2.0
o
5.0V
4.5V
3.5V
T A = 150 C
2.0
ID , Drain Current (A)
o
1.5
2.5V
1.0
V G =2.0V
1.5
2.5V
1.0
V G =2.0V
0.5
0.5
0.0
0.0
0.0
0.5
1.0
1.5
2.0
0.0
2.5
0.5
1.0
1.5
2.0
2.5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
1.8
I D =0.6A
V G =4.5V
I D = 0.4 A
o
T A =25 C
1.6
Normalized RDS(ON)
RDS(ON) (mΩ)
800
600
1.4
1.2
1.0
400
0.8
0.6
200
2
3
4
-50
5
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
1.0
0.8
Normalized VGS(th)
1.5
IS(A)
0.6
T j =150 o C
T j =25 o C
0.4
1.0
0.5
0.2
0.0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP1332GEU
10
f=1.0MHz
100
V DS =10V
V DS =12V
V DS =16V
6
C iss
C (pF)
VGS , Gate to Source Voltage (V)
I D =0.6A
8
4
C oss
2
C rss
0
10
0.0
0.4
0.8
1.2
1.6
2.0
1
2.4
3
5
7
9
11
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
Normalized Thermal Response (Rthja)
1
100us
ID (A)
1
1ms
0.1
10ms
o
T A =25 C
Single Pulse
100ms
DC
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4