AP4002T-HF (AN6014) - Advanced Power Electronics Corp

AP4002T-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Fast Switching Characteristics
▼ Simple Drive Requirement
600V
RDS(ON)
5Ω
ID
G
▼ RoHS Compliant
BVDSS
400mA
S
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The TO-92 package is widely used for commercial-industrial applications.
TO-92
G
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
+30
V
[email protected]=25℃
Continuous Drain Current, V GS @ 10V
400
mA
3
A
2
W
0.017
W/℃
20
mJ
2
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
150
℃/W
Rthj-l
Maximum Thermal Resistance, Junction-lead
60
℃/W
Data & specifications subject to change without notice
1
200807312
AP4002T-HF
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
600
-
-
V
VGS=10V, ID=400mA
-
-
5
Ω
VGS=0V, ID=1mA
3
Max. Units
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=400mA
-
570
-
mS
IDSS
Drain-Source Leakage Current
VDS=600V, VGS=0V
-
-
100
uA
IGSS
Gate-Source Leakage
VGS=+30V
-
-
+1
uA
ID=2A
-
12
19
nC
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=480V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
5.5
-
nC
3
td(on)
Turn-on Delay Time
VDD=200V
-
10
-
ns
tr
Rise Time
ID=1A
-
12
-
ns
td(off)
Turn-off Delay Time
RG=50Ω,VGS=10V
-
52
-
ns
tf
Fall Time
RD=200Ω
-
19
-
ns
Ciss
Input Capacitance
VGS=0V
-
375
600
pF
Coss
Output Capacitance
VDS=10V
-
170
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
45
-
pF
Min.
Typ.
Tj=25℃, IS=2A, VGS=0V
-
-
1.5
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
3
3
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=2A, VGS=0V,
-
340
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
2.2
-
uC
Notes:
1.Pulse width limited by Max. junction temperature.
o
2.Starting Tj=25 C , VDD=50V , L=10mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4002T-HF
2
2
T A =150 C
ID , Drain Current (A)
10V
7.0V
6.0V
1.5
ID , Drain Current (A)
10V
7.0V
6.0V
5.0V
o
T A =25 o C
1
5.0V
1.5
1
V G = 4.5 V
0.5
0.5
V G = 4.5 V
0
0
0
4
8
0
12
4
8
12
16
20
24
28
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3
1.2
I D =400mA
V G =10V
Normalized RDS(ON)
Normalized BVDSS (V)
1.1
1
2
1
0.9
0.8
0
-50
0
50
100
-50
150
o
0
50
100
150
T j , Junction Temperature ( o C )
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
1.2
10
Normalized VGS(th) (V)
8
6
o
T j = 25 C
IS (A)
T j = 150 o C
4
1
0.8
0.6
2
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4002T-HF
f=1.0MHz
1000
C iss
12
I D =2A
V DS =480V
C (pF)
VGS , Gate to Source Voltage (V)
16
8
100
C oss
4
C rss
10
0
0
4
8
12
1
16
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
1
ID (A)
1ms
10ms
0.1
100ms
1s
o
0.01
T L =25 C
Single Pulse
DC
0.001
Normalized Thermal Response (Rthjc)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
PDM
0.01
0.01
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjl + T L
Single Pulse
Rthjl=60 oC/W
0.001
1
10
100
1000
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4