Spansion ® Flash Memory Product Selector Guide Parallel NOR Flash Serial NOR Flash SLC NAND Flash Spansion ® Introduces Breakthrough Interface and World’s Fastest NOR Flash Memory spansion hyperbus interface – breakthrough throughput spansion hyperbus™ interface > Dramatically improves read performance while reducing pin-count and board space 350 > Supported by major System-on-Chip manufacturers 300 > Applicable to flash, RAM and peripheral devices 12 PINS 250 spansion hyperflash memory ™ to 333 megabytes per second read throughput MB/S > Up > 5X faster performance than ordinary Quad SPI – 333MB/sec VCC = 1.8V – 200MB/sec VCC = 3.0V > 1/3 200 150 100 the pin-count of parallel NOR flash > Automotive Temperature – -40°C to +105°C – -40°C to +125°C ~45 PINS 50 0 > Space-Saving 8x6mm BGA – Common 24-ball BGA footprint – SPI, QSPI, Dual QSPI or HyperFlash Memory 6 PINS 4 PINS Page-mode Parallel SPI Ordinary DDR Quad SPI 6 PINS Spansion DDR Quad SPI Sustained Read Throughput (MB/s) Spansion HyperBus Interface solutions for instant-on and interactive graphical user interface Auto-Cluster D-SLR Advanced Driver Assistance Systems Medical Spansion Flash Memory Product Selector Guide Embedded and Mobile Applications Portfolio Infotainment Factory Automation LED Projector 2 Spansion Products Portfolio Spansion offers a wide range of NOR flash memory solutions in multiple voltages, densities and packages expressly designed and optimized for embedded and mobile applications, including: > > > > > Automotive Consumer electronics Gaming Industrial equipment > > Machine-to-Machine Networking PC and peripherals > > > Set-top box Telecom Wireless BROAD FLASH PORTFOLIO: 1Mb TO 8Gb; 3V AND 1.8V SOLUTIONS 1 – 2Mb 4Mb 8Mb 16Mb 32Mb 64Mb 128Mb 256Mb 512Mb 1Gb 2Gb 4Gb 8Gb kl family - hyperflash Multiplexed High Performance DDR gl family Leading price-performance, page-mode fl family High performance single and multi I/O serial peripheral interface (SPI) 3.0V al family Performance – standard interface jl/pl family High performance simultaneous read/write cd/cl family Burst mode for automotive ml family ONFI 1.0, x8/x16 ks family - hyperflash Multiplexed High Performance DDR as family Standard interface 1.8V vs /xs /ns families Multiplexed burst mode simultaneous read/write ws family Burst mode simultaneous read/write fs family ms family High Performance multi I/O serial peripheral interface (SPI) ONFI 1.0, x8/x16 Spansion Flash Memory Product Selector Guide Embedded and Mobile Applications Portfolio 3 Spansion Flash Memory Guide process node 110nm 110nm 90nm 90nm 65nm 65nm architecture Floating Gate MirrorBit® Floating Gate MirrorBit MirrorBit MirrorBit Eclipse™ features KS-S 3.0V HyperBus, Burst ADM Interface KL-S 1.8V, burst mode, SRW1, de-multiplex ADP interface WS-P WS-R 1.8V, burst mode, SRW, multiplex ADM interface NS-P VS-R 1.8V, burst mode, SRW, AADM interface 32nm Floating Gate Floating Gate Floating Gate NAND NAND NAND XS-R 1.8V, standard NOR, de-multiplex ADP interface AS-J 2.5V, burst mode, de-multiplex ADP interface CD-J 3.0V, burst mode, de-multiplex ADP interface CL-J 3.0V, SRW, de-multiplex ADP interface JL-J 3.0V, page mode, SRW, de-multiplex ADP interface PL-J 3.0V, page mode, de-multiplex ADP interface 3.0V, Serial Pheripheral Interface (SPI) 41nm product nomenclature 1.8V HyperBus, Burst ADM Interface 3.0V, standard NOR, de-multiplex ADP interface 48nm GL-N GL-P GL-S FL-P FL-S AL-J FL1-K FL2-K 1.8V Serial Peripheral Interface (SPI) FS-S 1.8V, ONFI 1.0, x8/x16 MS-1 MS-1 MS-2 3.0V, ONFI 1.0, x8/x16 ML-1 ML-1 ML-2 Bus Types – ADP: Address Data Parallel, ADM: Address Data Multiplexed, AADM: Address high, Address low, Data Multiplexed, SPI: Serial Peripheral Interface 1) SRW: Simultaneous Read/Write Spansion Flash Memory Product Selector Guide Embedded and Mobile Applications Portfolio 4 Spansion KL/KS Families Spansion FL Family 128MB – 512MB 3V/1.8V HYPERFLASH MEMORY Spansion KL/KS HyperFlash™ family consists of high-speed CMOS, MirrorBit™ NOR flash devices implementing the low pin-count Spansion HyperBus™ interface that achieves the industry’s highest read throughput, up to 333 megabytes per second – more than five times faster than ordinary Quad SPI flash currently available with one-third the pin-count of parallel flash. The balance of high performance and low pin count makes HyperFlash memories especially attractive for systems needing instant-on operation and interactive Graphical User Interfaces (GUI). HyperFlash is offered in a 24-Ball BGA package which provides an easy migration from Spansion’s single and dual-quad-SPI (2xQSPI) packages. This package allows performance scalability from one QSPI device to two QSPI devices to the highest performance HyperFlash memory option. 4Mb – 1Gb, 3V SERIAL FLASH MEMORY Spansion FL Serial flash family offers the highest density SPI flash and supports lower pin counts, enables lower overall system cost and offers fast read/write performance. These benefits, coupled with a flexible sector architecture, make the Spansion FL family an ideal solution for a variety of industrial, consumer electronics and automotive applications, with performance that matches or in some cases, exceeds conventional parallel I/O NOR flash memory. The Spansion FL-S SPI family offers increased levels of read/write performance and functionality with an enhanced feature set, delivering an effective data throughput of up to 80MBytes/sec while maintaining backward compatibility with legacy solutions, enabling easy migrations. key applications key applications > Automotive instrument clusters > Infotainment/navigation systems Advanced driver assistance systems (ADAS) > > Hand-held displays > Digital cameras > Projectors > Factory automation > > key device features VOLTAGE 2.7 - 3.6V (KL) 1.7 - 1.95V (KS) DENSITIES 128Mb – 512Mb INTERFACE HyperBus BUS x8 SECTOR TYPE Uniform Medical diagnostic equipment CLOCK RATE 100MHz (KL) 166MHz (KS) Home automation appliances TEMPERATURE RANGE -40°C to +85°C -40°C to +105°C packages > > Digital TV > DVD players/recorders > Set-top box > High-end printers > DSL modems > Optical disk drives > Wireless LANs > Automotive Infotainment/Clusters key device features VOLTAGE 2.7-3.6V Vcc (All) 1.65-3.6V VIO (FL-S) DENSITIES 4Mb – 1Gb INTERFACE x1, x2, x4 SECTOR TYPE PERFORMANCE packages > Industry standard, SOIC, USON/WSON and BGA > Wafer and die form TEMPERATURE RANGE 24-ball FBGA SECURITY Spansion Flash Memory Product Selector Guide Embedded and Mobile Applications Portfolio Uniform 4KB, Uniform 64KB, Uniform 256KB (128Mb – 1Gb FL-S) Up to 133MHz (Single I/O) Up to 104MHz (Dual/ Quad I/O) Up to 80MHz (DDR) -40°C to +85°C -40°C to +105°C Advanced sector protection, OTP region, Security registers with OTP lock down, software/hardware protection modes, Unique ID 5 Spansion GL Family Spansion CD/CL Families 32Mb – 2Gb, 3V NOR FLASH MEMORY 32Mb – 64Mb, 2.5/3.0V BURST MODE NOR FLASH MEMORY Spansion GL family is optimized for the voltage, density, cost-per-bit, reliability, performance and scalability needs of a wide variety of embedded applications. With densities from 32Mb to 2Gb, each device requires only a single 3.0V power supply for read and write functions and is entirely command set compatible with the JEDEC Flash standards. The Spansion GL family supports Spansion’s universal footprint, which provides one footprint across all densities, product families and process technologies allowing manufacturers to design a single platform and simply scale Flash memory capacity up or down, depending on the features and functionality of the target end system. Spansion’s burst NOR CD and CL families are optimized to withstand harsh under-the-hood automotive environments while maintaining high reliability and high performance. In addition to burst frequency support of up to 75 MHz, the Spansion CD and CL families offer a wide x32 data bus and extended temperature support. These features and a high-reliability technology node can help enable the next generation of infotainment and navigation/telematic devices. key applications > Automotive navigation > Communications infrastructure equipment > Gaming > Industrial control > Handsets > Set-top box > Consumer packages universal footprint > RoHS-compliant lead-free available > 56-pin TSOP package > 56-ball FBGA* > 64-ball fortified BGA package > Wafer and die form key applications > Automotive under-the-hood > Automotive in-cabin key device features VOLTAGE 3.0V DENSITIES 32Mb – 2Gb INTERFACE Page mode BUS x8 or x16, x16 only* SECTOR TYPE Uniform ACCESS TIME 70** – 130ns PAGE MODE ACCESS MODE 15-30ns, 8 word/16 word* 0°C to +70°C -40°C to +85°C -40°C to +105°C* Advanced sector protection TEMPERATURE RANGE SECURITY key device features VOLTAGE 2.5V (CD) and 3.0V (CL) DENSITIES 16Mb – 32Mb BUS x32 packages > 80-pin PQFP > 80-ball Fortified BGA SECTOR TYPE Top/Bottom boot > Wafer and die form BURST FREQUENCY Up to 75 MHz TEMPERATURE RANGE SECURITY -40°C to +125°C, -40°C to +145°C (on die/wafer products) OTP region, advanced sector protection * For GL-S **For GL064S Spansion Flash Memory Product Selector Guide Embedded and Mobile Applications Portfolio 6 Spansion FS Family Spansion AS Family 128Mb – 256Mb, 1.8V SERIAL FLASH MEMORY 8Mb – 16Mb, 1.8V NOR FLASH MEMORY Spansion FS Serial flash memory offers a reduced pin count for lower system cost while providing optimal read/write performance for a variety of networking, mobile, consumer electronics and industrial applications. With read speeds up to 133 MHz clock speed in single/dual/quad I/O mode and 80 MHz for double data rate (DDR) modes, the FS family delivers up to 80 MBytes/sec of read throughput. In addition, industry leading Programming performance of up to 1.08 MBytes/s speeds manufacturing throughput and lowers programming costs dramatically. The 1.8V Spansion AS family is optimized for performance and reliability. In addition to a fast initial access time of 70ns, the AS family offers low power consumption and a fast program speed which is ideal for a wide variety of embedded applications. Based on a proven 110nm Floating Gate process technology, the reliability of the AS family also makes it suitable for use in automotive-grade applications. key applications key applications > key device features Network Storage 1.70 – 2.0V > FPGAs VOLTAGE > Smart Meters DENSITIES 128Mb – 256Mb > Automotive INTERFACE x1, x2, x4 > Printers > Medical > Digital Cameras > Feature phones > Bluetooth SECTOR TYPE TEMPERATURE RANGE packages > Industry standard SOIC, WSON and BGA > Wafer and die form SECURITY 8x4kB and 1x32kB at top/bottom with all remaining sectors 64kB; option of uniform 256KB or uniform 64kB -40°C to +85°C -40°C to +105°C* Advance sector protection, OTP region, Security registers with OTP lock down, software/hardware protection modes, Unique ID Spansion Flash Memory Product Selector Guide Embedded and Mobile Applications Portfolio key device features > Handheld navigation > Bluetooth VOLTAGE 1.8V > Personal media players DENSITIES 8Mb – 16Mb INTERFACE Standard NOR packages > 48-pin TSOP BUS x8/x16 > 48-ball BGA (0.8mm pitch and 0.5mm pitch) SECTOR TYPE Top/Bottom boot > Wafer and die form ACCESS TIME 70ns TEMPERATURE RANGE -40°C to +85°C SECURITY Secured Silicon Region, 256-byte OTP sector for permanent, secure identification 7 Spansion AL/JL/PL Families Spansion ML/MS Family 8Mb – 128Mb, 3.0V NOR FLASH MEMORY 1 – 8Gb NAND 3V/1.8V NAND FLASH MEMORY Spansion offers a broad line of 3V parallel NOR devices on a high-reliability technology node with an array of features to meet the needs of a wide variety of embedded applications. The 3.0V Spansion AL family devices are standard mode flash with low density offerings and extended temperature support. The 3.0V Spansion JL family devices offer two and four bank memory configurations to allow performance gains via simultaneous read-write operations. The 3.0V Spansion PL family devices not only provide the benefits of a four-bank configuration, but also support page mode operations which further increases data throughput to improve system performance. key device features AL JL PL VOLTAGE 3.0V 3.0V 3.0V DENSITIES 8Mb – 16Mb 32Mb – 64Mb 32Mb – 128Mb Spansion NAND products complement the parallel and serial NOR offerings from Spansion for embedded applications. Spansion applies its stringent process for qualification, testing, extended temperature support and packaging to its line of SLC NAND products. Spansion’s high performance and high reliability SLC NAND product portfolio will be available in 1 Gb, 2 Gb, 4 Gb and 8Gb (DDP) densities. These products will work with systems that support 1-bit ECC and 4-bit ECC. All of Spansion’s NAND products will be backed by Spansion’s world-class customer support and commitment for longevity of supply. 4Xnm (1-bit ECC) 1/2/4/8Gb 3V x8 TSOP/BGA and 32nm (4-bit ECC) 1/2/4/8Gb 3V x8 TSOP/BGA are in production currently. Also, a few 1.8V configurations are available in X16 and X8 BGA package. 4Xnm 1Gb/2Gb/4Gb are also available with AEC-Q100 and GT-Grade @ 85°C as well as high temperature of 105°C (1Gb @105°C requires 2-bit ECC correction instead of 1-bit ECC). 32nm 1Gb and 4Gb are available with AEC-Q100 and GT-Grade @85°C. Other configurations are coming soon. key applications key device features > Digital TVs > Set-top Boxes VOLTAGE 3V/1.8V > Network memory modules TECHNOLOGY 4x/3x nm SLC FG NAND > Industrial meters > Industrial sensors DENSITIES 1 – 8Gb > Game Consoles INTERFACE ONFI 1.0 > Printers BUS x8/x16 > Digital Camera > Automotive infotainment CYCLING 100K (typ.) > GPS Navigation > Toys BUS x8/x16 x8/x16 x16 SECTOR TYPE Top/Bottom/ Uniform boot Top/Bottom boot Dual boot ACCESS TIME 55 – 90ns 55 – 70ns 55 – 70ns PAGE MODE ACCESS TIME N/A N/A 25 – 30ns, (8 word) BANKS 1 2–4 4 TEMPERATURE RANGE -40°C to +85°C, -40°C to +125°C -40°C to +85°C -25°C to +85°C, -40°C to +85°C SECURITY OTP region OTP region OTP region packages 48-pin TSOP 48-ball BGA Wafer and die form 48-ball 56-ball 64-ball 80-ball BGA 56-pin TSOP > Industry PACKAGES 48-ball 64-ball BGA 48-pin TSOP Wafer and die form PERFORMANCE 1 Standard 48-Pin TSOP, TEMPERATURE RANGE 63-Ball BGA, 67-Ball BGA PACKAGES SOFTWARE SUPPORT Cache Programming, Multi-plane commands support, OTP, and 25uS Random access, 25 ns Seq. access, 200-300uS tprog, 2-3.5ms tbers -40°C to +85°C, -40°C to +105°C 48-Pin TSOP 63-Ball BGA 67-Ball BGA Complimentary Drivers and Spansion FFS Different parts have varied performance, please refer to page 12 for exact details on a particular part. 1 Spansion Flash Memory Product Selector Guide Embedded and Mobile Applications Portfolio 8 Spansion WS/NS/VS/XS Families 64Mb – 512Mb, 1.8V, BURST MODE, SIMULTANEOUS READ/WRITE, NOR FLASH MEMORY Spansion WS/NS/VS/XS flash memory families offer high density, high reliability and performance-enhancing features making them the ideal solution for multimedia rich mobile applications. The product lines feature 1.8V, multi-bank, fast access with burst mode, and simultaneous read/write operation with product density scaling from 64Mb to 512Mb. The Spansion WS/NS/VS/XS product families support burst speeds up to 108MHz as well as page mode interface which can improve read transfer rates by up to 50%, compared to standard asynchronous Flash products. key applications > > Entry level, mainstream and high-end handsets High-performance mobile applications key device features VOLTAGE 1.8V DENSITIES 64Mb – 512Mb INTERFACE WS: (ADP), NS/VS: (ADM), XS: (AADM) BUS x16 SECTOR TYPE Top/Bottom/Dual boot packages > 44-ball > 64-ball INITIAL ACCESS TIME 80ns > 84-ball BGA > Wafer and die form PAGE MODE ACCESS TIME 15ns (WS only) BURST FREQUENCY Up to 108MHz TEMPERATURE RANGE SECURITY -25°C to +85°C, -40°C to +85°C on select products Secured Silicon Region, 256-word OTP sector for permanent, secure identification Spansion Flash Memory Product Selector Guide Embedded and Mobile Applications Portfolio 9 Spansion’s Universal Footprint CONSISTENT PACKAGES AND PINOUTS SPEEDS TIME-TO-MARKET AND REDUCES DESIGN leveraging the spansion universal footprint Spansion’s universal footprint with consistent packaging and pinouts across product families, process technologies, and densities allows design engineers to swap devices at any point in the design or product life cycle without affecting board design. design simplicity Designers can manage differentiated end product models based on a single platform design thanks to Spansion’s universal footprint. The platform design concept, used by makers of DVD players, industrial equipment, and network routers, saves design time and minimizes cost. Coupled with our cost-effective system software and drivers, you have a complete Flash solution to manage the changing design needs of your products. > One footprint across densities, product families, and process technologies > Scaleable, seamless HYPERFLASH time-to-market 24-BALL BGA 5X5 BALL ARRAY 16Mb – 512Mb > Minimize board rework and re-spin Price > Interoperable between high performance and price-performance products to optimize BOM PARALLEL NOR 48-PIN AND 56-PIN TSOP For extreme design flexibility 8Mb – 1Gb supply chain 9mm 9mm 11mm 9mm 11mm 11mm 9mm 9mm 9mm 9mm 13mm 13mm 13mm 9mm 11mm 48-pin TSOP 48-pin 48-pin 48-pin TSOP 56-pin TSOP TSOPTSOP 56-pin 56-pin 56-pin TSOP TSOP TSOP 13mm 64-BALL FORTIFIED BGA For highest flexibility 11x13mm, 9x9mm 16Mb – 2Gb 56-BALL BGA For small form factor for high densities 128Mb – 512Mb > Service multiple platforms with one footprint > Minimize reliance on one product by qualifying multiple products in the same footprint 48-BALL FINE PITCH BGA For small form factor for low densities 8Mb – 64Mb SPI NOR NAND 8-PIN SOIC 150 MIL 4Mb – 32Mb 8-PIN SOIC 208 MIL 4Mb – 128Mb 8-PAD WSON 6X5 mm 16Mb – 128Mb 8-PAD WSON 6X8 mm 32Mb – 256Mb 150 MIL SOIC AND 6X5 WSON 208 MIL SOIC AND 6X8 WSON Single footprint, widest density range 63-BALL BGA 1Gb – 8Gb 48-PIN TSOP 1Gb – 8Gb 16-PIN SOIC 300 MIL 32Mb – 1Gb 24-BALL BGA 6X4 BALL ARRAY 16Mb – 512Mb 24-BALL BGA 5X5 BALL ARRAY 16Mb – 1Gb 67-BALL BGA 1Gb - 2Gb Spansion Flash Memory Product Selector Guide Embedded and Mobile Applications Portfolio 10 (S) Spansion Ordering Part Number Construction single-die products Generic OPN Ordering Options Speed Option Asynchronous (no CLK input) “Speed Option” represents random access time (ns). If greater than 100ns, use the two leftmost digits. Synchronous (CLK input) “Speed Option” represents clock frequency (MHz). First character represents the data rate, combined with the speed in 100s of MHz: 0 SDR, <100 MHz A SDR, >=100 MHz D DDR, <100 MHz Second character represents the speed between 0 and 99 MHz: D 15-19 E 20-24 F 25-29 A 0-4 B 5-9 C 10-14 Bus Width (NAND) 00 = x8 NAND, single die G 30-34 H 35-39 J 40-44 S Prefix S = Spansion Series 2 G Flash Interface and Simultaneous Read-write srw no srw A J Standard G P Page W Burst (ADP) K Burst (ADM) N/V Burst (AADM) X F Serial (SPI) C Automotive Burst (Demux) M NAND ADP = Address data parallel ADM = Address data mux AADM = Address – address data mux U 90-94 W 95-99 X 100-108 R 75-79 S 80-84 T 85-89 Temperature Grade C = Commercial (0° to +70°C) S = Extended Commercial (0° to +85°C) W = Wireless (-25° to +85°C) I = Industrial (-40° to +85°C) V = Automotive in-cabin (-40° to +105°C) N = Extended (-40° to +125°C) Density 001 - 512 = 1 Mb-512 Mb 204 - 216 = 4 Mb-16 Mb* 116 - 164 = 16 Mb-64 Mb ** Family 9 N 60-64 P 65-69 Q 70-74 04 = x16 NAND, single die Product Series 25 = Serial Peripheral Interface (SPI) Flash memory 26 = HyperFlash memory 29 = Sector Erase NOR Flash memory 34 = Floating Gate NAND 70 = Dual Die Flash Package Prefix K 45-49 L 50-54 M 55-59 G Density L 0 Core Voltage L = 3-volt VCC D = 2.5-volt VCC S = 1.8-volt VCC 1 Tech G S Process Technology J = 110nm, Floating Gate Technology K = 90nm, Floating Gate Technology N = 110nm, MirrorBit Technology P = 90nm, MirrorBit Technology R = 65nm, MirrorBit Technology S = 65nm, MirrorBit Technology (Eclipse) 1 = NAND Revision 1 (4X nm) 2 = NAND Revision 2 (3X nm) Spansion Flash Memory Product Selector Guide Embedded and Mobile Applications Portfolio Speed 1 Package 0 D Package Type (Family) A = BGA - 0.5mm pitch B = BGA - 0.8mm pitch C = CSOP D = Fortified BGA, 9mm x 9mm E = Super CSP F = Fortified BGA, 11mm x 13mm M = SOIC/SOP N = SON P = PLCC Q = PQFP S = SSOP T = TSOP G = BGA - 0.8mm pitch Temp H I Packaging Type 0 = Tray 1 = Tube 2 = 7" Tape & Reel 3 = 13" Tape & Reel Model Number 0 1 Pack type 3 Additional Ordering Options Varies for each generic OPN (characters 1-9). Meaning is defined in each datasheet. Package Material Set (Varies by Package Type) A = Leaded F = Lead (Pb)-Free H = Low Halogen Lead (Pb)-Free * For FL2-K ** For FL1-K 11 3.0V HyperFlash Memory burst mode part number access times (ns)/ clock frequency packages temp vcc(v) vio(v) org sector features 512 Mb • S70GL02GS 110 (20), 120 (30) 64-Ball FBGA -40° to +85°C, -40° to +105°C 2.7-3.6 2.7-3.6 x8 U Pin compatible with Spansion’s Single and Dual-Quad-SPI (2xQSPI) packages 256 Mb • S70GL02GP 110 (25) 64-Ball FBGA -40° to +85°C, -40° to +105°C 2.7-3.6 2.7-3.6 x8 U Pin compatible with Spansion’s Single and Dual-Quad-SPI (2xQSPI) packages 128 Mb • S29GL01GS 100 (15), 110 (20) 56-Pin TSOP, 64-Ball FBGA, KGW -40° to +85°C, -40° to +105°C 2.7-3.6 2.7-3.6 x8 U Pin compatible with Spansion’s Single and Dual-Quad-SPI (2xQSPI) packages packages temp vcc(v) vio(v) org sector features 1.7 - 1.95 1.7 - 1.95 x8 U Pin compatible with Spansion’s Single and Dual-Quad-SPI (2xQSPI) packages density page mode simulop 1.8V HyperFlash Memory density page mode simulop burst mode part number access times (ns)/ clock frequency 512 Mb • S26KS512S 133 MHz 24-Ball FBGA -40° to +85°C, -40° to +105°C 256 Mb • S26KS256S 133 MHz 24-Ball FBGA -40° to +85°C, -40° to +105°C 1.7 - 1.95 1.7 - 1.95 x8 U Pin compatible with Spansion’s Single and Dual-Quad-SPI (2xQSPI) packages 128 Mb • S26KS128S 133 MHz 24-Ball FBGA -40° to +85°C, -40° to +105°C 1.7 - 1.95 1.7 - 1.95 x8 U Pin compatible with Spansion’s Single and Dual-Quad-SPI (2xQSPI) packages Spansion Flash Memory Product Selector Guide Embedded and Mobile Applications Portfolio 12 3.0V Parallel Flash Memory density page mode 2 Gb simulop burst mode part number access times (ns)/ clock frequency packages temp vcc(v) vio(v) org sector • S70GL02GS 110 (20), 120 (30) 64-Ball FBGA -40° to +85°C 2.7-3.6 2.7-3.6, 1.65-Vcc x16 H, L 2 Gb • S70GL02GP 110 (25) 64-Ball FBGA 0° to +85°C, -40° to +85°C 3.0-3.6 3.0-3.6 x8/x16 H, L 1 Gb • S29GL01GS 100 (15), 110 (20) 56-Pin TSOP, 64-Ball FBGA, KGW -40° to +85°C, -40° to +105°C 2.7-3.6 2.7-3.6, 1.65-Vcc x16 H, L 1 Gb • S29GL01GP 110 (25), 120 (25), 130 (25) 56-Pin TSOP, 64-Ball FBGA, KTW 0° to +85°C, -40° to +85°C 3.0-3.6, 2.7-3.6 3.0-3.6, 2.7-3.6, 1.65-Vcc x8/x16 H, L Sectors: 1024x128KB; WP#/ACC Pin; Secured Silicon Region; Advanced Sector Protection, VersatileI/O, 32-word write buffer. 512 Mb • S29GL512S 100 (15), 110 (20) 56-Pin TSOP, 56-Ball FBGA, 64-Ball FBGA, KGW -40° to +85°C, -40° to +105°C 2.7-3.6 2.7-3.6, 1.65-Vcc x16 H, L Sectors: 512x128KB; 32-byte Page Mode Read; WP# Pin; Secured Silicon Region; Advanced Sector Protection, VersatileI/O, 512-byte write buffer. 512 Mb • S29GL512P 100 (25), 110 (25), 120 (25) 56-Pin TSOP, 64-Ball FBGA, 0° to +85°C, -40° to +85°C 3.0-3.6, 2.7-3.6 3.0-3.6, 2.7-3.6, 1.65-Vcc x8/x16 H, L Sectors: 512x128KB; WP#/ACC Pin; Secured Silicon Region; Advanced Sector Protection, VersatileI/O, 32-word write buffer. 256 Mb • S29GL256S 90 (15), 100 (20) 56-Pin TSOP, 56-Ball FBGA, 64-Ball FBGA, KGW -40° to +85°C, -40° to +105°C 2.7-3.6 2.7-3.6, 1.65-Vcc x16 H, L Sectors: 256x128KB; 32-byte Page Mode Read; WP# Pin; Secured Silicon Region; Advanced Sector Protection, VersatileI/O, 512-byte write buffer. 256 Mb • S29GL256P 90 (25), 100 (25), 110 (25) 56-Pin TSOP, 64-Ball FBGA, KGD, KGW 0° to +85°C, -40° to +85°C 3.0-3.6, 2.7-3.6 3.0-3.6, 2.7-3.6, 1.65-Vcc x8/x16 H, L Sectors: 256x128KB; WP#/ACC pin; Secured Silicon Region; Advanced Sector Protection, VersatileI/O; 32-word write buffer. 128 Mb • S29GL128S 90 (15), 100 (20) 56-Pin TSOP, 56-Ball FBGA, 64-Ball FBGA, KGW -40° to +85°C, -40° to +105°C 2.7-3.6 2.7-3.6, 1.65-Vcc x16 H, L Sectors: 128x128KB; 32-byte Page Mode Read; WP# Pin; Secured Silicon Region; Advanced Sector Protection, VersatileI/O, 512-byte write buffer. 128 Mb • S29GL128P 90 (25), 100 (25), 110 (25) 56-Pin TSOP, 64-Ball FBGA, KGD, KGW 0° to +85°C, -40° to +85°C 3.0-3.6, 2.7-3.6 x8/x16 H, L Sectors: 128x128KB; WP#/ACC pin; Secured Silicon Region; Advanced Sector Protection, VersatileI/O, 32-word write buffer. 128 Mb • S29PL127J 60(25), 65(25), 70(30) 56-Pin TSOP, 80-Ball FBGA, KTW -40° to +85°C, -25° to +85°C 2.7-3.6 3.0-3.6, 2.7-3.6, 1.65-Vcc 2.7-3.6, 1.65-1.95 x16 D 64 Mb • S29GL064S 70 (15), 80 (25) 48-Pin TSOP, 56-Pin TSOP, 48-Ball FBGA, 64-Ball FBGA 0° to +85°C, -40° to +85°C 2.7-3.6 2.7-3.6, 1.65-3.6 x16, x8/x16 T, B, U 64 Mb • S29GL064N 90 (25), 110 (30) 48-Pin TSOP, 56-Pin TSOP, 48-Ball FBGA, 64-Ball FBGA, KGD, KGW -40° to +85°C 2.7-3.6 2.7-3.6, 1.65-3.6 x16, x8/x16 T, B, U 64 Mb • S29PL064J 55(20), 60(25), 65(25), 70(30) 48-Ball FBGA, 56-Ball FBGA -40° to +85°C, -25° to +85°C 2.7-3.6 2.7-3.6 x16 D Banks: 16/48/48/16Mb; WP#/ACC pin; Secured Silicon Region; Advanced Sector Protection. Sectors: 8x8KB, 127x64KB or 128x64KB; WP#/ACC Pin or separate WP# and ACC pins; Secured Silicon Region; VersatileI/O; 256-word write buffer. Sectors: 8x8KB, 127x64KB or 128x64KB; WP#/ACC Pin or separate WP# and ACC pins; Secured Silicon Region; VersatileI/O; 16-word write buffer. Banks: 8/24/24/8Mb; WP#/ACC pin; Secured Silicon Region; Advanced Sector Protection. 55, 60, 70 -40° to +85°C 2.7-3.6 NA x8/x16 D Banks: 8/24/24/8Mb; WP#/ACC pin; Secured Silicon Region. -40° to +85°C 2.7-3.6 2.7-3.6, 1.65-3.6 x8/x16 T, B, U • • features Sectors: 2048x128KB; 32-byte Page Mode Read; WP# Pin; Secured Silicon Region; Advanced Sector Protection, VersatileI/O, 512-byte write buffer. Sectors: 2048x128KB; WP#/ACC Pin; Secured Silicon Region; Advanced Sector Protection, VersatileI/O, 32-word write buffer. Sectors: 1024x128KB; 32-byte Page Mode Read; WP# Pin; Secured Silicon Region; Advanced Sector Protection, VersatileI/O, 512-byte write buffer. S29GL032N 90(25), 110(30) 48-Pin TSOP, 48-Ball FBGA, KGW 48-Pin TSOP, 56-pin TSOP, 48Ball FBGA, 64-Ball FBGA, KGW • S29PL032J 55(20), 60(25), 65(25), 70(30) 48-Ball FBGA, 56-Ball FBGA -40° to +85°C, -25° to +85°C 2.7-3.6 2.7-3.6 x16 D 32 Mb • S29JL032J 60, 70 48-Pin TSOP, 48-Ball FBGA -40° to +85°C 2.7-3.6 NA x8/x16 T, B Sectors: 8x8KB, 63x64KB or 64x64KB; WP#/ACC Pin; Secured Silicon Region; VersatileI/O; 16-word write buffer. Banks: 4/12/12/4Mb; WP#/ACC pin; Secured Silicon Region; Advanced Sector Protection. Banks: 4/12/12/4Mb, 4/28, 8/24, 16/16; WP#/ACC pin; Secured Silicon Region. 32 Mb • S29CL032J 75, 66, 56, 40MHz 80-Pin PQFP, 80-Ball BGA -40° to +85°C, -40° to +125°C, -40° to +145°C 3.0-3.6 1.65-3.6 x32 D Banks: 8/24Mb or 24/8Mb; WP#, ACC pins, Secured Silicon Region; Advanced Sector Protection, Versatile I/O. S29AL016J 55, 70 48-Pin TSOP, 48-Ball FBGA, 64-Ball FBGA, 56-Pin SSOP, KGD, KGW -40° to +85°C, -40° to +125°C 3.0-3.6, 2.7-3.6 NA x8/x16 T, B Sectors: 1x16KB, 2x8KB, 1x32KB, 31x64KB. S29CL016J 66, 56, 40MHz 80-Pin PQFP, 80-Ball BGA, KGD 3.0-3.6 1.65-3.6 x32 D Banks: 4/12Mb or 12/4Mb; WP#, ACC pins, Secured Silicon Region; Advanced Sector Protection, Versatile I/O. S29AL008J 55, 70 48-Pin TSOP, 48-Ball FBGA, 56-Pin SSOP, KGD, KGW -40° to +85°C, -40° to +125°C, -40° to +145°C -40° to +85°C, -40° to +125°C 3.0-3.6, 2.7-3.6 NA x8/x16 T, B Sectors: 1x16KB, 2x8KB, 1x32KB, 15x64KB. • 64 Mb 32 Mb • 32 Mb • S29JL064J • 16 Mb 16 Mb 8 Mb • • Sector: T: Top Boot, B: Bottom Boot, D: Dual Boot, U: Uniform Sectors, H: High-Protect, L: Low-Protect Spansion Flash Memory Product Selector Guide Embedded and Mobile Applications Portfolio 13 3.0V & 1.8V SPI Flash Memory density page mode simulop burst mode part number access times (ns)/ clock frequency 133MHz (Single I/O), 104MHz (Multi I/O), 80MHz (DDR)1 133MHz (Single I/O), 104MHz (Multi I/O), 80MHz (DDR)1 133MHz (Single I/O, Multi I/O), 80MHz (DDR) 133MHz (Single I/O), 104MHz (Multi I/O), 80MHz (DDR)1 104MHz (Single I/O), 80MHz (Multi I/O) 133MHz (Single I/O, Multi I/O), 80MHz (DDR) 1 Gb S70FL01GS 512 Mb S25FL512S 256 Mb S25FS256S 256 Mb S25FL256S 256 Mb S70FL256P 128 Mb S25FS128S 128 Mb S25FL127S 108MHz (Single I/O), 108MHz (Multi I/O) 128 Mb S25FL128S 133MHz (Single I/O), 104MHz (Multi I/O), 80MHz (DDR)1 128 Mb S25FL129P 104MHz (Single I/O), 80MHz (Multi I/O) 128 Mb S25FL128P 104MHz (Single I/O) 64 Mb S25FL064P 104MHz (Single I/O), 80MHz (Multi I/O) 64 Mb S25FL164K 108MHz (Multi I/O) 32 Mb S25FL032P 104MHz (Single I/O), 80MHz (Multi I/O) 32 Mb S25FL132K 108MHz (Multi I/O) 16 Mb S25FL116K 108MHz (Multi I/O) 16 Mb S25FL216K 8 Mb S25FL208K 4 Mb S25FL204K 65MHz (Single I/O, Dual Output) 76MHz (Single I/O, Dual Output) 85MHz (Single I/O, Dual Output) packages temp vcc(v) 16-Pin SO, 24-ball BGA (6x8 mm) -40° to +85°C, -40° to +105°C 2.7-3.6 16-Pin SO, 24-ball BGA (6x8 mm) -40° to +85°C, -40° to +105°C 2.7-3.6 16-pin SO, 8-contact WSON (6x8mm), 24-ball BGA (6x8mm) 16-Pin SO, 8-contact WSON (6x8 mm), 24-ball BGA (6x8 mm) 16-Pin SO, 24-ball BGA (6x8 mm) 8-pin SO 208mil, 8-contact WSON (6x5mm), 24-ball BGA (6x8mm) 16-Pin SO, 8-pin SO 208mil, 8-contact WSON (6x5 mm), 24-ball BGA (6x8 mm) 16-Pin SO, 8-contact WSON (6x8 mm), 24-ball BGA (6x8 mm) 16-Pin SO, 8-contact WSON (6x8 mm), 24-ball BGA (6x8 mm) 16-Pin SO, 8-contact WSON (6x8 mm) 16-Pin SO, 8-contact WSON (6x8 mm), 24-ball BGA (6x8 mm), KGW 8-Pin SO 208mil, 16-Pin SO, 8-contact WSON (5x6 mm), 24-ball BGA (6x8 mm), KGW 8-Pin SO 208mil, 16-Pin SO, 8-contact USON (5x6 mm), 8-contact WSON (6x8 mm), 24-ball BGA (6x8 mm), KGW 8-Pin SO 208mil, 8-Pin SO 150mil, 8-contact WSON (5x6 mm), 24-ball BGA (6x8 mm), KGW 8-Pin SO 208mil, 8-Pin SO 150mil, 8-contact WSON (5x6 mm), 24-ball BGA (6x8 mm), KGW 8-Pin SO 208mil, 8-Pin SO 150mil 8-Pin SO 208mil, 8-Pin SO 150mil 8-Pin SO 208mil, 8-Pin SO 150mil -40° to +85°C, -40° to +105°C 1.7-2.0 -40° to +85°C, -40° to +105°C 2.7-3.6 -40° to +85°C vi/o(v) org sector features x1, x2, x4 U Dual Die stack; Sectors: uniform 256KB; H/W & S/W write protect; OTP sector. x1, x2, x4 U Sectors: uniform 256KB; H/W & S/W write protect; OTP sector. x1, x2, x4 U Sectors: uniform 256KB or uniform 64KB with eight 4KB subsectors and one 32KB sub-sector top/bottom, all remaining sectors 64KB ; H/W & S/W write protect; OTP sector. x1, x2, x4 U Sectors: uniform 256KB or uniform 64KB with 32 top/bottom 4KB sub-sectors; H/W & S/W write protect; OTP sector. 2.7-3.6 x1, x2, x4 U -40° to +85°C, -40° to +105°C 1.7-2.0 x1, x2, x4 U Sectors: uniform 256KB or uniform 64KB with 32 top/bottom 4KB sub-sectors; H/W & S/W write protect; OTP sector; ACC pin. Sectors: uniform 256KB or uniform 64KB with eight 4KB subsectors and one 32KB sub-sector top/bottom, all remaining sectors 64KB ; H/W & S/W write protect; OTP sector. -40° to +85°C, -40° to +105°C 2.7-3.6 x1, x2, x4 U Sectors: uniform 256KB or uniform 64KB with 16 top/bottom 4KB sub-sectors; H/W & S/W write protect; OTP sector. -40° to +85°C, -40° to +105°C 2.7-3.6 x1, x2, x4 U Sectors: uniform 256KB or uniform 64KB with 32 top/bottom 4KB sub-sectors; H/W & S/W write protect; OTP sector. -40° to +85°C, -40° to +105°C 2.7-3.6 x1, x2, x4 U Sectors: uniform 256KB or uniform 64KB with 32 top/bottom 4KB sub-sectors; H/W & S/W write protect; OTP sector; ACC pin. -40° to +85°C 2.7-3.6 x1 U Sectors: uniform 256KB or uniform 64KB; H/W & S/W write protect; x8 Parallel Program Mode; ACC pin. -40° to +85°C, -40° to +105°C 2.7-3.6 x1, x2, x4 U Sectors: uniform 64KB with 32 top/bottom 4KB sub-sectors, H/W & S/W write protect; OTP sector; ACC pin. -40° to +85°C, -40° to +105°C 2.7-3.6 x1, x2, x4 U Sectors: uniform 4KB with 64KB block erase; H/W & S/W write protect; OTP sector; Program/erase suspend/resume. -40° to +85°C, -40° to +105°C 2.7-3.6 x1, x2, x4 U Sectors: uniform 64KB with 32 top/bottom 4KB sub-sectors, H/W & S/W write protect; OTP sector; ACC pin. -40° to +85°C, -40° to +105°C 2.7-3.6 x1, x2, x4 U Sectors: uniform 4KB with 64KB block erase; H/W & S/W write protect; OTP sector; Program/erase suspend/resume. -40° to +85°C, -40° to +105°C 2.7-3.6 x1, x2, x4 U Sectors: uniform 4KB with 64KB block erase; H/W & S/W write protect; OTP sector; Program/erase suspend/resume. -40° to +85°C 2.7-3.6 x1, x2 U -40° to +85°C 2.7-3.6 x1, x2 U -40° to +85°C 2.7-3.6 x1, x2 U Sectors: uniform 4KB with 64KB block erase; H/W & S/W write protect. Sectors: uniform 4KB with 64KB block erase; H/W & S/W write protect. Sectors: uniform 4KB with 64KB block erase; H/W & S/W write protect. 1.65-3.6 1.65-3.6 1.65-3.6 Sector: T: Top Boot, B: Bottom Boot, D: Dual Boot, U: Uniform Sectors, H: High-Protect, L: Low-Protect. 1: 3.0-3.6V. Spansion Flash Memory Product Selector Guide Embedded and Mobile Applications Portfolio 14 3.0V NAND Memory part number S34ML01G100 density (gbits) 1 i/o bus width x8 number of blocks 1024 page size (bytes) 2048+64 sequential access (ns) 25 random access (us) 25 page program time (us) 200 block erase time (ms) 2 ecc bits required packages temp 1 TSOP 48, BGA 63 -40° to +85°C (Ind), -40° to + 105°C (Auto) vcc(v) vi/o(v) features -0.6-4.6 ONFI 1.0 compliant, HW protection for involuntary pgm/erase during power transition, Block zero valid up to 1K cycles, Supports Read Cache. Temp support up to 105°C available with *2-bit ECC instead of 1-bit ECC. 2.7-3.6 -0.6-4.6 ONFI 1.0 compliant, OTP, HW protection for involuntary pgm/erase during power transition, Block zero valid up to 1K cycles, Supports Read and Write Cache with Multi-plane support. Now AEC-Q100, GT-Grade available. Temp support up to 105°C available now. 2.7-3.6 -0.6-4.6 ONFI 1.0 compliant, OTP, HW protection for involuntary pgm/erase during power transition, Block zero valid up to 1K cycles, Supports Read and Write Cache with Multi-plane support. -0.6-4.6 ONFI 1.0 compliant, OTP, HW protection for involuntary pgm/erase during power transition, Block zero valid up to 1K cycles, Supports Read and Write Cache with Multi-plane support. Now AEC-Q100, GT-Grade available. Temp support up to 105°C available now. 2.7-3.6 S34ML02G100 2 x8 2048 2048+64 25 25 200 3.5 1 TSOP 48, BGA 63 -40° to+ 85°C (Ind), -40° to +105°C (Auto) S34ML02G104 2 x16 2048 2048+64 25 25 200 3.5 1 TSOP 48, -40° to +85°C 1 TSOP 48, BGA 63 -40° to +85°C (Ind), -40° to +105°C (Auto) 2.7-3.6 -0.6-4.6 ONFI 1.0 compliant, OTP, HW protection for involuntary pgm/erase during power transition, Block zero valid up to 1K cycles, Supports Read and Write Cache with Multi-plane support. Now AEC-Q100, GT-Grade available. Temp support up to 105°C available now. S34ML04G100 4 x8 4096 2048+64 25 25 200 3.5 2.7-3.6 S34ML04G104 4 x16 4096 2048+64 25 25 200 3.5 1 TSOP 48, BGA 63 -40° to +85°C (Ind), -40° to +105°C (Auto) S34ML08G101 8 x8 8192 2048+64 25 25 200 3.5 1 TSOP 48, BGA 63 -40° to +85°C 2.7-3.6 -0.6-4.6 ONFI 1.0 compliant, OTP, HW protection for involuntary pgm/erase during power transition, Block zero valid up to 1K cycles, Supports Read and Write Cache with Multi-plane support (TSOP-Two Chip Enables, BGA-Single Chip Enable). S34ML01G200 1 x8 1024 2048+64 25 25 300 3 4 TSOP 48, BGA 63 -40° to +85°C 2.7-3.6 -0.6-4.6 ONFI 1.0 compliant, OTP, HW protection for involuntary pgm/erase during power transition, Block zero valid up to 1K cycles, Supports Read and Write Cache with Multi-plane support. Unique ID support S34ML01G204 1 x16 1024 2048+64 25 25 300 3 4 TSOP 48 -40° to +85°C 2.7-3.6 -0.6-4.6 ONFI 1.0 compliant, OTP, HW protection for involuntary pgm/erase during power transition, Block zero valid up to 1K cycles, Supports Read and Write Cache with Multi-plane support. Unique ID support. S34ML02G200 1 x8 2048 2048+64 25 30 300 3.5 4 TSOP 48, BGA 63 -40° to +85°C 2.7-3.6 -0.6-4.6 ONFI 1.0 compliant, OTP, HW protection for involuntary pgm/erase during power transition, Block zero valid up to 1K cycles, Supports Read and Write Cache with Multi-plane support. Unique ID support. S34ML04G200 4 x8 4096 2048+64 25 30 300 3.5 4 TSOP 48, BGA 63 -40° to +85°C 2.7-3.6 -0.6-4.6 ONFI 1.0 compliant, OTP, HW protection for involuntary pgm/erase during power transition, Block zero valid up to 1K cycles, Supports Read and Write Cache with Multi-plane support. Unique ID support. S34ML08G200 4 x8 8192 2048+64 25 30 300 3.5 4 TSOP 48, BGA 63 -40° to +85°C 2.7-3.6 -0.6-4.6 ONFI 1.0 compliant, OTP, HW protection for involuntary pgm/erase during power transition, Block zero valid up to 1K cycles, Supports Read and Write Cache with Multi-plane support. Unique ID support. Spansion Flash Memory Product Selector Guide Embedded and Mobile Applications Portfolio 15 1.8V NAND Memory part number density (gbits) i/o bus width number of blocks page size (bytes) sequential access (ns) random access (us) page program time (us) block erase time (ms) ecc bits required packages temp vcc(v) vi/o(v) features S34MS01G100 1 x8 1024 2048+64 45 25 250 2 1 BGA 63 -40° to +85°C 1.7-1.95 -0.6-2.7 ONFI 1.0 compliant, HW protection for involuntary pgm/ erase during power transition, Block zero valid up to 1K cycles, Supports Read Cache. S34MS01G104 1 x16 1024 2048+64 45 25 250 3.5 1 BGA 63 -40° to +85°C 1.7-1.95 -0.6-2.7 ONFI 1.0 compliant, HW protection for involuntary pgm/ erase during power transition, Block zero valid up to 1K cycles, Supports Read Cache. S34MS02G100 2 x8 2048 2048+64 45 25 250 3.5 1 BGA 63 -40° to +85°C 1.7-1.95 -0.6-2.7 ONFI 1.0 compliant, OTP, HW protection for involuntary pgm/erase during power transition, Block zero valid up to 1K cycles, Supports Read and Write Cache with Multi-plane support. S34MS02G104 2 x16 2048 2048+64 45 25 250 3.5 1 BGA 63 -40° to +85°C 1.7-1.95 -0.6-2.7 ONFI 1.0 compliant, OTP, HW protection for involuntary pgm/erase during power transition, Block zero valid up to 1K cycles, Supports Read and Write Cache with Multi-plane support. S34MS04G100 4 x8 4096 2048+64 25 25 200 3.5 1 TSOP 48, BGA 63 -40° to +85°C 1.7-1.95 -0.6-2.7 ONFI 1.0 compliant, OTP, HW protection for involuntary pgm/erase during power transition, Block zero valid up to 1K cycles, Supports Read and Write Cache with Multi-plane support. S34MS01G200 1 x8 1024 2048+64 45 25 300 3 4 BGA 63 -40° to +85°C 1.7-1.95 -0.6-2.7 ONFI 1.0 compliant, OTP, HW protection for involuntary pgm/erase during power transition, Block zero valid up to 1K cycles, Supports Read Cache and Write Cache with Multiplane support. Unique ID support. S34MS01G204 1 x16 1024 2048+64 45 25 300 3 4 BGA 63 -40° to +85°C 1.7-1.95 -0.6-2.7 ONFI 1.0 compliant, OTP, HW protection for involuntary pgm/erase during power transition, Block zero valid up to 1K cycles, Supports Read Cache and Write Cache with Multiplane support. Unique ID support. S34MS02G200 2 x8 2048 2048+128 45 30 300 3.5 4 TSOP 48, BGA 63, BGA 67 -40° to +85°C 1.7-1.95 -0.6-2.7 ONFI 1.0 compliant, OTP, HW protection for involuntary pgm/erase during power transition, Block zero valid up to 1K cycles, Supports Read Cache and Write Cache with Multiplane support. Unique ID support. S34MS02G200 2 x16 2048 2048+128 45 30 300 3.5 4 TSOP 48, BGA 63, -40° to +85°C 1.7-1.95 -0.6-2.7 ONFI 1.0 compliant, OTP, HW protection for involuntary pgm/erase during power transition, Block zero valid up to 1K cycles, Supports Read Cache and Write Cache with Multiplane support. Unique ID support. S34MS04G200 4 x8 4096 2048+64 45 30 300 3.5 4 BGA 63 -40° to +85°C 1.7-1.95 -0.6-2.7 ONFI 1.0 compliant, OTP, HW protection for involuntary pgm/erase during power transition, Block zero valid up to 1K cycles, Supports Read Cache and Write Cache with Multiplane support. Unique ID support. S34MS04G204 4 x16 4096 2048+64 45 30 300 3.5 4 TSOP 48, BGA 63 -40° to +85°C 1.7-1.95 -0.6-2.7 ONFI 1.0 compliant, OTP, HW protection for involuntary pgm/erase during power transition, Block zero valid up to 1K cycles, Supports Read Cache and Write Cache with Multiplane support. Unique ID support. 1.8V NAND MCP Solutions product technology (nm) code flash (mb) psram (mb) dram (mb) flash/ram speed (mhz)1 mcp/pop package (mm) package footprint S76MSA90222AHD000 32 nm NAND/ 46nm LPDDR1 DRAM 1Gb NA 512Mb 200 MCP 8x9x1 130-Ball Spansion Flash Memory Product Selector Guide Embedded and Mobile Applications Portfolio 16 2.5V Parallel Flash Memory simulop burst mode part number access times (ns)/ clock frequency packages temp vcc(v) vi/o(v) org sector features 32 Mb • • S29CD032J 75, 66, 56, 40MHz 80-Pin PQFP, 80-Ball BGA, KGD -40° to +85°C, -40° to +125°C, -40° to +145°C 2.5-2.75 1.65-2.75 x32 D Banks: 8/24Mb or 24/8Mb; WP#, ACC pins, Secured Silicon Region; Advanced Sector Protection, Versatile I/O. 16 Mb • • S29CD016J 66, 56, 40MHz 80-Pin PQFP, 80-Ball BGA, KGD -40° to +85°C, -40° to +125°C, -40° to +145°C 2.5-2.75 1.65-2.75 x32 D Banks: 4/12Mb or 12/4Mb; WP#, ACC pins, Secured Silicon Region; Advanced Sector Protection, Versatile I/O. density page mode 1.8V Parallel ADP Flash Memory density page mode simulop burst mode part number access times (ns)/ clock frequency packages temp vcc(v) vi/o(v) org sector features 512 Mb • • • S29WS512P 54, 66, 80, 104MHz 84-Ball FBGA -25° to +85°C 1.70-1.95 1.701.95 x16 D Banks: 16x32Mb; WP#, ACC Pins; Secured Silicon Region; Advanced Sector Protection; 32-word write buffer. 256 Mb • • • S29WS256P 54, 66, 80, 104MHz 84-Ball FBGA -25° to +85°C 1.70-1.95 1.701.95 x16 D Banks: 16x16Mb; WP#, ACC Pins; Secured Silicon Region; Advanced Sector Protection; 32-word write buffer. 128 Mb • • • S29WS128P 54, 66, 80, 104MHz 84-Ball FBGA, KTD, KGW -25° to +85°C 1.70-1.95 1.701.95 x16 D Banks: 16x8Mb; WP#, ACC Pins; Secured Silicon Region; Advanced Sector Protection; 32-word write buffer. 64 Mb • • • S29WS064R 66, 83, 108MHz 84-Ball FBGA -40° to +85°C, -25° to +25°C 1.70-1.95 1.701.95 x16 T, B Banks: 4x16Mb; ACC Pin; Secured Silicon Region; Advanced Sector Protection; 32-word write buffer. 16 Mb S29AS016J 70 48-Pin TSOP, 48-Ball FBGA, KGD, KGW -40° to +85°C 1.65-1.95 NA x8/x16 T, B Sectors: 8x8KB, 31x64KB; WP# pin, RY/BY# pin. 8 Mb S29AS008J 70 48-Pin TSOP, 48-Ball FBGA, KGD, KGW -40° to +85°C 1.65-1.95 NA x8/x16 T, B Sectors: 8x8KB, 15x64KB; WP# pin, RY/BY# pin. 1.8V Parallel ADP MCP Solutions product technology (nm) code flash (mb) psram (mb) S71WS256PC0 90 256 64 dram (mb) flash/ram speed (mhz)1 mcp/pop package (mm) package footprint 104/104 MCP 11.6 x 8.0 84-ball Sector: T: Top Boot, B: Bottom Boot, D: Dual Boot, U: Uniform Sectors, H: High-Protect, L: Low-Protect 1: Maximum targeted frequency noted for each product – lower speed grades may also be offered. Spansion Flash Memory Product Selector Guide Embedded and Mobile Applications Portfolio 17 1.8V Muxed AADM Flash Memory simulop burst mode part number access times (ns)/ clock frequency packages temp vcc(v) vi/o(v) org sector features 256 Mb • • S29XS256R 83, 104, 108MHz 44-Ball FBGA -40° to +85°C, -25° to +85°C 1.70-1.95 1.701.95 x16 T, B Banks: 8x32Mb; WP#, ACC Pins; Secured Silicon Region; 32-word write buffer. 128 Mb • • S29XS128R 83, 104, 108MHz 44-Ball FBGA -40° to +85°C, -25° to +85°C 1.70-1.95 1.701.95 x16 T, B Banks: 8x16Mb; WP#, ACC Pins; Secured Silicon Region 32-word write buffer. 64 Mb • • S29XS064R 66, 83, 108MHz 44-Ball FBGA -40° to +85°C, -25° to +85°C 1.70-1.95 1.701.95 x16 T, B Banks: 8x16Mb; WP#, ACC Pins; Secured Silicon Region; Advanced Sector Protection; 32-word write buffer. density page mode 1.8V Muxed AADM MCP Solutions product technology (nm) code flash (mb) S72XS256RE0 65 256 psram (mb) dram (mb) flash/ram speed (mhz)1 mcp/pop package (mm) package footprint 256 108/166 MCP 8.0 x 8.0 133-ball 1.8V Muxed ADM Flash Memory simulop burst mode part number access times (ns)/ clock frequency packages temp vcc(v) vi/o(v) org sector features 512 Mb • • S29NS512P 66, 83MHz 64-Ball BGA -25° to +85°C 1.70-1.95 1.701.95 x16 T Banks: 16x32Mb; WP#, ACC Pins; Secured Silicon Region; Advanced Sector Protection; 32-word write buffer. 256 Mb • • S29VS256R 83, 104, 108MHz 44-Ball FBGA -40° to +85°C, -25° to +85°C 1.70-1.95 1.701.95 x16 T, B Banks: 8x32Mb; WP#, ACC Pins; Secured Silicon Region; 32-word write buffer. 128 Mb • • S29VS128R 83, 104, 108MHz 44-Ball FBGA -40° to +85°C, -25° to +85°C 1.70-1.95 1.701.95 x16 T, B Banks: 8x16Mb; WP#, ACC Pins; Secured Silicon Region; 32-word write buffer. 64 Mb • • S29VS064R 66, 83, 108MHz 44-Ball FBGA -40° to +85°C, -25° to +85°C 1.70-1.95 1.701.95 x16 T, B Banks: 4x16Mb; ACC Pin; Secured Silicon Region; Advanced Sector Protection; 32-word write buffer. density page mode 1.8V Muxed ADM MCP Solutions flash/ram speed (mhz)1 mcp/pop package (mm) package footprint 32 108/108 MCP 7.5 x 5.0 52-ball 32 108/108 MCP 7.7 x 6.2 56-ball 128 64 108/108 MCP 7.7 x 6.2 56-ball 65 256 64 108/108 MCP 7.7 x 6.2 56-ball S71VS256RD0 65 256 128 108/108 MCP 9.2 x 8.0 56-ball S72VS256RE0 65 256 108/166 MCP 8.0 x 8.0 133-ball product technology (nm) code flash (mb) psram (mb) S71VS064RB0 65 64 S71VS128RB0 65 128 S71VS128RC0 65 S71VS256RC0 dram (mb) 256 Sector: T: Top Boot, B: Bottom Boot, D: Dual Boot, U: Uniform Sectors, H: High-Protect, L: Low-Protect 1: Maximum targeted frequency noted for each product – lower speed grades may also be offered. Spansion Flash Memory Product Selector Guide Embedded and Mobile Applications Portfolio 18 Technical Tips for System Designers Core & Code offers technical expertise and content tailored for embedded system designers. Published on a quarterly basis, Core & Code features articles, “how-to” design pieces, application notes, new products and more from Spansion and other industry thought leaders on embedded technologies, products, issues and best practices for designing products in automotive, industrial, consumer and networking markets. This platform provides a forum to share knowledge on the industry and recommendations to ease the design process. Get the latest industry news on our blog, use the All Issues section to explore past articles and browse upcoming industry events to get more involved. 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Spansion is at the heart of electronics systems, connecting, controlling, storing and powering everything from automotive electronics and industrial systems to the highly interactive and immersive consumer devices that are enriching people’s daily lives. spansion 915 Deguigne Drive / PO Box 3453 Sunnyvale, CA 94088-3453 USA +1 (408) 962-2500 1 866 SPANSION www.spansion.com www.facebook.com/spansion twitter: @spansion www.youtube.com/spansioninc www.linkedin.com/company/spansion 43715C September 2014 ©2014 Spansion®, the Spansion logo, MirrorBit®, MirrorBit® Eclipse™ and combinations thereof, are trademarks and registered trademarks of Spansion LLC in the United States and other countries. Other names used are for informational purposes only and may be trademarks of their respective owners.