Midium Power Transistors (50V / 3A) QS5W2 Structure NPN Silicon epitaxial planar transistor Dimensions (Unit : mm) TSMT5 Features 1) Low saturation voltage, typically V CE (sat) = 0.35V (Max.) (I C / I B= 1A / 50mA) 2) High speed switching (1) Base (2) Collector (3) Emitter Applications Driver Packaging specifications Type Abbreviated symbol : W02 Inner circuit (Unit : mm) Package TSMT5 Code TR Basic ordering unit (pieces) 3000 (5) (4) Tr.1 Absolute maximum ratings (Ta = 25C) <It is the same ratings for the Tr.1 and Tr.2> Symbol Limits Unit Collector-base voltage VCBO 50 V Collector-emitter voltage Emitter-base voltage VCEO 50 6 3 V V A *3 6 0.5 1.25 A W/Total W/Total *3 0.9 W/Element 150 -55 to 150 C C Parameter Collector current DC Pulsed Power dissipation Junction temperature Range of storage temperature VEBO IC ICP *1 PD PD PD Tj Tstg *2 (1) Tr.1 Base (2) Emitter (3) Tr.2 Base (4) Tr.2 Collector (5) Tr.1 Collector (1) Tr.2 (2) (3) *1 Pw=10ms, Single Pulse *2 Mounted on a recommended land. *3 Mounted on a 25 x 25 x 0.8[mm] ceramic board. www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.11 - Rev.A QS5W2 Data Sheet Electrical characteristics (Ta=25°C) <It is the same ratings for the Tr.1 and Tr.2> Symbol Min. Typ. Max. Unit Collector-emitter breakdown voltage Parameter BVCEO 50 - - V IC= 1mA Conditions Collector-base breakdown voltage BVCBO 50 - - V IC= 100μA Emitter-base breakdown voltage BVEBO 6 - - V IE= 100μA Collector cut-off current ICBO - - 1 A VCB= 50V Emitter cut-off current IEBO A VEB= 4V - - 1 *1 VCE(sat) - 130 350 hFE 180 - 450 - - 320 - MHz Cob - 13 - pF Turn-on time ton *2 - 50 - ns Storage time tstg *2 - 450 - ns t f *2 - 80 - ns Collector-emitter staturation voltage DC current gain Transition frequency Collector output capacitance Fall time fT *1 mV IC= 1A, IB= 50mA VCE= 3V, IC= 50mA VCE= 10V IE=-500mA, f=100MHz VCB= 10V, IE=0A f=1MHz IC= 1.5A, I B1= 150mA, IB2=-150mA, V CC~ _ 10V *1 Pulsed *2 See switching time test circuit www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/5 2010.11 - Rev.A QS5W2 Data Sheet lElectrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics Fig.2 DC Current Gain vs. Collector Current ( I ) 3.0mA 5.0mA 2.5mA 0.50 1000 Ta=25°C 2.0mA COLLECTOR CURRENT : IC[A] 0.40 DC CURRENT GAIN : hFE 1.5mA 0.30 1.0mA 0.20 VCE=5V 3V 100 IB=0.5mA 0.10 Ta=25°C 10 0.00 0 0.5 1 1.5 1 2 10 Fig3. DC Current Gain vs. Collector Current ( II ) 10000 Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current ( I ) 1000 1 VCE=3V Ta=25°C COLLECTOR SATURATION VOLTAGE : VCE(sat)[V] DC CURRENT GAIN : hFE 1000 COLLECTOR CURRENT : IC[mA] COLECTOR TO EMITTER VOLTAGE :VCE[V] 100 Ta=125°C 75°C 25°C -40°C 10 1 10 100 1000 0.1 0.01 IC/IB=50 20 10 0.001 1 10000 10 COLLECTOR CURRENT : IC[mA] 100 1000 10000 COLLECTOR CURRENT : IC[mA] Fig.6 Ground Emitter Propagation Characteristics Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ( II ) 1 10000 VCE=3V 1000 COLLECTOR CURRENT : IC[mA] COLLECTOR SATURATION VOLTAGE : VCE(sat)[V] 100 0.1 0.01 Ta=125°C 75°C 25°C -40°C Ta=125°C 75°C 25°C 100 -40°C 10 IC/IB=20 0.001 1 1 10 100 1000 0 10000 1 1.5 BASE TO EMITTER VOLTAGE : VBE[V] COLLECTOR CURRENT : IC[mA] www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 0.5 3/5 2010.11 - Rev.A QS5W2 Data Sheet Fig.7 Emitter Input Capacitance vs. Emitter-Base Voltage Collector Output Capacitance vs. Collector-Base Voltage Fig.8 Gain Bandwidth Product vs. Emitter Current 1000 Ta=25°C VCE=10V Ta=25°C f=1MHz IE=0A IC=0A Cib TRANSITION FREQUENCY : fT[MHz] COLLECTOR OUTPUT CAPACITANCE : Cob(pF) EMITTER INPUT CAPACITANCE : Cib(pF) 1000 100 10 Cob 100 10 1 0.1 1 10 10 100 COLLECTOR - BASE VOLTAGE : VCB (V) EMITTER - BASE VOLTAGE : VEB (V) 100 1000 EMITTER CURRENT : IE[mA] Fig.9 Safe Operating Area 10 COLLECTOR CURRENT : IC [A] 1ms 10ms 1 100ms 0.1 DC Ta=25°C (Mounted on a recommended land) Ta=25°C When one element is operated Single non repetitive pulse 0.01 0.1 1 10 100 COLLECTOR TO EMITTER VOLTAGE : VCE[V] www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 4/5 2010.10 - Rev.A QS5W2 Data Sheet Switching time test circuit RL=6.8Ω I B1 V IN IC VCC ~ _10V IB2 Pw ~ _50μs Pw DUTY CYCLE≦1% I B1 BASE CURENT WAVEFORM IB2 ton COLLECTOR CURRENT WAVEFORM tstg tf 90% IC 10% www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 5/5 2010.11 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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