STZ5.6N Diodes Zener Diode Array STZ5.6N !External dimensions (Units : mm) !Applications Constant voltage control For the ESD measure of a signal line 1.1+0.2 −0.1 2.9±0.2 1.9±0.2 0.8±0.1 2.8±0.2 0~0.1 6F Week manufactured 0.4 +0.1 −0.05 0.15+0.1 −0.06 !Construction Silicon epitaxial planar ROHM : SMD3 EIAJ : SC-59 !Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit P∗ 200 mW Power dissipation Junction temperature Tj 150 ˚C Storage temperature Tstg −55~+150 ˚C ∗ Total of 2 elements !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Zener voltage VZ 5.31 − 5.92 V IZ=5mA Reverse current IR − − 1.00 µA VR=2.5V Operating resistance ZZ − − 60 Ω IZ=5mA Rising operating resistance ZZK − − 200 Ω IZ=0.5mA Capacitance between terminals CT − 12 − pF f=1MHZ, VR=5V 0.3~0.6 !Features 1) Designed for mounting on small surface areas 2) High reliability 3) Composite type with two anode/cathode elements +0.2 1.6 −0.1 0.95 0.95 STZ5.6N Diodes !Others Item IEC1000-4-2 Standard1 Charge/discharge capacitance : 200pF±10% Charge/discharge capacitance : 150pF Device configuration Discharge resistance : 400Ω ±10% Discharge resistance : 330Ω 10 repetitions No malfunction 5 repetitions No spark or smoke emitted : ±25kV Judgment contents : ±20kV : ± 8kV No element destruction No malfunction Contact Suspended : ± 8kV : ±15kV 1m 100µ 10µ 4.0 5.0 6.0 ZENER VOLTAGE : Vz (V) Fig.1 Zener characteristics 100 300 POWER DISSIPATION : Pd (mW) ZENER CURRENT : Iz (A) 10m CAPACITANCE BETWEEN TERMINALS : CT (pF) !Electrical characteristic curves (Ta=25°C) f=1MHz 10 1 5 10 200 100 0 0 25 50 100 REVERSE VOLTAGE : VR (V) AMBIENT TEMPERATURE : Ta (˚C) Fig.2 Capacitance between terminals characteristic Fig.3 Derating curve 150