Crystal oscillator HIGH-FREQUENCY CRYSTAL OSCILLATOR SG-710 series Product number (please refer to page 1) Q33 7 1 0 x x x x x x x 0 0 • • • • Ceramic package with 1.5 mm thickness. Excellent environmental capability. Low current consumption due to use of C-MOS technology. Low current consumption by output enable function (OE) or standby function (ST). Actual size Specifications (characteristics) Item Symbol f0 Output frequency range Max. supply voltage Operating voltage Storage temperature Operating temperature Power source voltage Temperature range Specifications SG-710PHK SG-710ECK 1.8000 MHz to 1.8000 MHz to 80.0000 MHz 67.0000 MHz -0.5 V to +7.0 V 5.0 V ±0.5 V 3.3 V ±0.3 V -55 °C to +125 °C -10 °C to +70 °C (-40 °C to +85 °C) VDD-GND VDD TSTG TOPR B: ±50 x 10-6 C: ± 100 x 10-6 M: ± 100 x 10-6 ∆f/f0 Frequency stability Current consumption Iop Output disable current IOE Standby current IST Duty tw/ t High output voltage Low output voltage Output load condition (fan out) VOH VOL N CL VIH VIL TTL CMOS Output enable/disable input voltage Output rise time 13 mA Max. 24 mA Max. — — 6 mA Max. 12 mA Max. — — 15 mA Max. 26 mA Max. 34 mA Max. 40 mA Max. 5 mA Max. 10 mA Max. 13 mA Max. 16 mA Max. 8 mA Max. 15 mA Max. 18 mA Max. — — — — — 10 µA Max. 40 % to 60 % — 0.9 x VDD Min. 0.1 x VDD Max. — 15 pF Max. 0.7 x VDD Min. 0.3 x VDD Max. 6 ns Max. — — 45 % to 55 % 2.4 V Min. 0.4 V Max. 10 TTL Max. (15 pF Max.) 2.0 V Min. 0.8 V Max. — 5 ns Max. — 5 ns Max. tTLH 45 % to 55 % 40 % to 60 % VDD -0.5 V Min. 0.5 V Max. 10 TTL Max. 50 pF Max. 2.0 V Min. 0.8 V Max. 5 ns Max. Refer to page 31. "Frequency range" Stored as bare product after unpacking Refer to page 31. "Frequency range" B,C:-10 °C to +70 °C, M:-40 °C to +85 °C Fo ≤ 25 MHz, No load condition (ECK: Fo ≤ 32 MHz, No load condition) Fo ≤ 50 MHz, No load condition Fo ≤ 67 MHz, No load condition Fo ≤ 80 MHz, No load condition Fo ≤ 25 MHz, OE=GND(PTK, PHK) Fo ≤ 50 MHz, OE=GND(PTK, PHK) Fo ≤ 67 MHz, OE=GND(PTK, PHK) Fo ≤ 80 MHz, OE=GND(PTK, PHK) ST=GND(ECK) CMOS load: 1/2 VDD level TTL load: 1.4 V level IOH=-16 mA(PTK,PHK),-2 mA(ECK) IOL= 16 mA(PTK,PHK), 2 mA(ECK) OE terminal(PTK,PHK) ST terminal(ECK) CMOS load: 10 %→90 % VDD TTL load: 0.4 V→2.4 V CMOS load: 90 %→10 % VDD TTL load: 2.4 V→0.4 V — 5 ns Max. 6 ns Max. Output fall time tTHL Oscillation start up time tOSC 10 ms Max. Time at minimum operating voltage to be 0 s fa ±5 x 10 /year Max. S.R. ±10 x 10-6 Max. Ta= +25 °C, VDD = 5.0 V/3.3 V, First year Three drops on a hard board from 750 mm or excitation test with 29400 m/s2 x 0.3 ms x 1/2sine wave in 3 directions Aging Shock resistance — -6 External dimensions (Unit: mm) #3 W 4.8 ±0.2 5.0 ±0.2 H 1.3 ±0.1 1.4 +0.1 -0.15 1.8 2.0 #2 #2 L #1 1.4 H 5.08 L SG -710∗∗K 7.3 ±0.2 SG -710∗∗W 7.0 ±0.2 Note. OE Pin (PTK, PHK, PTW, PHW, PCW) OE pin - "H" or "open" : Specified frequency output. OE pin - "L" : Output is high impedance. NO. Pin terminal 1 OE or ST 2 GND 3 OUT 4 VDD ST pin (STW, SHW, SCW) ST pin - "H" or "open" : Specified frequency output. ST pin - "L" : Output is low level (weak pull-down), oscillation stops. ST pin (ECK) ST pin - "H" or "open" : Specified frequency output. ST pin - "L" : Output is high impedance., oscillation stops. 4.2 #1 #4 Recommended soldering pattern (Unit: mm) 2.6 E 40.000 HC724A 5.08 #3 W #4 37 Remarks SG-710PTK 1.8000 MHz to 50.0000 MHz 5.08 Crystal oscillator Specifications (characteristics) Item Output frequency range Power source voltage Temperature range Symbol fO Max. supply voltage VDD-GND Operating voltage VDD Storage temperature TSTG Operating temperature TOPR Specifications SG-710PTW/STW SG-710PHW/SHW 80.0001 MHz to 135.0000 MHz SG-710PCW/SCW 67.0001 MHz to 135.0000 MHz Output voltage VOH VOL Output load condition (fan out) CL Output enable disable input voltage VIH VIL Output rise time tTLH Output fall time tTHL Oscillation start up time Aging tOSC fa -0.5 V to +7.0 V 5.0 V ±0.5 V 3.3 V ±0.3 V -55 °C to +125 °C -20 °C to +70 °C -40 °C to +85 °C B : ±50 x 10-6 C : ±100 x 10-6 M : ±100 x 10-6 45 mA Max. 28 mA Max. 30 mA Max. 16 mA Max. 50 µA Max. — 40 % to 60 % 40 % to 60 % — VDD -0.4 V Min. 0.4 V Max. 15 pF — — 5 TTL + 15 pF — — — 15 pF 15 pF — 25 pF — 2.0 V Min. 70 % VDD Min. 0.8 V Max. 20 % VDD Max. 2.0 ns Max. — — 4.0 ns Max. — — — 3.0 ns Max. 3.0 ns Max. 2.0 ns Max. — — 4.0 ns Max. — — — 3.0 ns Max. 3.0 ns Max. 10 ms Max. ±5 x 10-6 /year Max. Shock resistance S.R. ±20 x 10-6 Max. ∆f/f0 Frequency stability Current consumption Output disable current Standby current Duty CMOS level TTL level IOP IOE IST tw/t Remarks Refer to page 31. "Frequency range" Stored as bare product after unpacking Refer to page 31. "Frequency range" -20 °C to +70 °C -40 °C to +80 °C No load condition (fo = Max.) OE=GND(P∗W) ST=GND(S∗W) CMOS load: 1/2VDD TTL load: 1.4 V IOH= -16 mA (∗TW/HW)/-8 mA(∗CW) IOL= 16 mA (∗TW/HW)/8 mA(∗CW) fo ≤ 135 MHz fo ≤ 90 MHz fo ≤ 135 MHz fo ≤ 125 MHz OE,ST OE,ST TTL load: 0.8 V→2.0 V, CL = Max. TTL load: 0.4 V→2.4 V, CL = Max. CMOS load: 20 % VDD→80 % VDD, CL = Max. TTL load: 2.0 V→0.8 V, CL = Max. TTL load: 2.4 V→0.4 V, CL = Max. CMOS load: 80 % VDD→20 % VDD, CL = Max. Time at minimum operating voltage to be 0 s Ta=+25 °C, VDD =5.0 V / 3.0 V, First year Three drops on a hard board from 750 mm or excitation test with 29400 m/s2 x 0.3 ms x 1/2 sine wave in 3 directions 38