ROHM 2SD2704KT146

For Muting (20V, 0.3A)
2SD2704K
Features
1) High DC current gain.
hFE = 820 to 2700
2) High emitter-base voltage.
VEBO = 25V (Min.)
3) Low Ron
Ron= 0.7 (Typ.)
Dimensions (Unit : mm)
2SD2704K
2.9
1.1
0.4
0.8
(3)
1.6
2.8
Structure
Epitaxial planar type
NPN silicon transistor
(2)
0.3Min.
(1)
0.95 0.95
0.15
1.9
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
Abbreviated symbol : XL
Packaging specifications
Package
Type
Taping
Code
T146
Basic ordering
unit (pieces)
3000
2SD2704K
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
V
VEBO
25
Collector current
IC
0.3
A
Collector power dissipation
PC
0.2
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Electrical characteristics (Ta=25C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
50
−
−
V
IC=10μA
Collector-emitter breakdown voltage
BVCEO
20
−
−
V
IC=1mA
Emitter-base breakdown voltage
BVEBO
25
−
−
V
IE=10μA
ICBO
−
−
0.1
μA
VCB=50V
Parameter
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Conditions
IEBO
−
−
0.1
μA
VEB=25V
VCE(sat)
−
50
100
mV
IC/IB=30mA/3mA
hFE
820
−
2700
−
VCE=2V, IC=4mA
−
35
−
MHz
fT∗
VCE=6V, IE= −4mA, f=10MHz
Output capacitance
Cob
−
3.9
−
pF
VCB=10V, IE=0A, f=1MHz
Output On-resistance
Ron
−
0.7
−
Ω
IB=5mA, Vi=100mV(rms), f=1kHz
∗ Measured using pulse current
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c 2012 ROHM Co., Ltd. All rights reserved.
○
1/3
2012.01 - Rev.C
2SD2704K
Data Sheet

Electrical characteristic curves
1000
Ta=125°C
100
25°C
−40°C
10
0.1
0.1
0
0.4
0.6
0.8
1
Ta=125°C
100
25°C
−40°C
10
0.1
0.2
0.4
0.6
0.8
1
1000
Ta=25°C
Ta= −40°C
100
10
1.2
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.1 Grounded emitter propagation
characteristics ( Ι )

Fig.2 Grounded emitter propagation
characteristics ( ΙΙ )

Fig.3 DC current gain
vs. collector current ( )
1000
Ta=25°C
Ta= −40°C
100
10
1
10
100
1000
10000
IC/IB=10/1
1000
Ta=125°C
100
Ta=25°C
10
Ta= −40°C
1
1
Fig.4 DC current gain
vs. collector current (
)


10000

IC/IB=50/1
1000
Ta=125°C
100
Ta=25°C
10
1
Ta= −40°C
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation voltage
vs. collector current ( )



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c 2012 ROHM Co., Ltd. All rights reserved.
○
100
1000
10000

IC/IB=20/1
1000
Ta=125°C
100
Ta=25°C
10
Ta= −40°C
1
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.5 Collector-emitter saturation voltage
vs. collector current ( )

Fig.6 Collector-emitter saturation voltage
vs. collector current ( )

BASE SATURATION VOLTAGE : VBE(sat) (mV)
COLLECTOR CURRENT : IC (mA)
10
10000
IC/IB=10/1
Ta= −40°C
1000
Ta=125°C
100
1
Ta=25°C
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.8 Base-emitter saturation voltage
vs. collector current ( )

2/3
BASE SATURATION VOLTAGE : VBE(sat) (mV)
VCE=6V
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
BASE TO EMITTER VOLTAGE : VBE(ON) (V)
Ta=125°C
DC CURRENT GAIN : hFE
VCE=2V
BASE TO EMITTER VOLTAGE : VBE(ON) (V)
10000
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
10000
Ta=125°C
0.1
0
1.2
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)


0.2
VCE=6V
DC CURRENT GAIN : hFE
VCE=2V
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
1000
10000
IC/IB=20/1
Ta= −40°C
1000
Ta=125°C
100
1
10
Ta=25°C
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.9 Base-emitter saturation voltage
vs. collector current ( )

2012.01 - Rev.C
Data Sheet
10000
Ta= −40°C
1000
Ta=125°C
100

IC/IB=50/1
1
Ta=25°C
10
100
1
1000

Ta=25°C
f=50MHz
IE=0A
1
COLLECTOR CURRENT : IC (mA)
10
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
10000
TRANSITION FREQUENCY : fT (MHz)
BASE SATURATION VOLTAGE : VBE(sat) (mV)
2SD2704K
100
Ta=25°C
f=1MHz
IE=0A

10
1
0.1
1
10
100
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
EMITTER CURRENT : IE (mA)
Fig.10 Base-emitter saturation voltage
vs. collector current ( )
100
Fig.12 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Fig.11 Gain bandwidth product
vs. emitter current


100
Ta= 25°C
ON RESISTANCE : Ron (Ω)
ON RESISTANCE : Ron (Ω)
100
10
1
0.1 See Fig.15
0.01
0.1
1
10
Ta= 25°C
10
1
0.1 See Fig.16
0.01
0.1
100
1
10
100
BASE CURRENT : IB (mA)
BASE CURRENT : IB (mA)
Fig.13 Output-on resistance vs. base current ( ) 
Fig.14 Output-on resistance vs. base current ( ) 


Ron measurement circuit

RL=1kΩ

RL=1kΩ
Input
Vi
100mV(rms)
1V(rms)
f=1kHz
V Output
v0
IB
Ron=
v0
vi−v0
Input
Vi
100mV(rms)
1V(rms)
f=1kHz
V Output
v0
IB
×RL
Ron=
v0
vi−v0
×RL
Fig.15 Ron measurement circuit ( )
Fig.16 Ron measurement circuit ( )







This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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c 2012 ROHM Co., Ltd. All rights reserved.
○
3/3

2012.01 - Rev.C
Notice
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R1120A