ROHM RB520ZS8A30

Data Sheet
Schottky Barrier Diode
RB520ZS8A30
lApplications
Rectifying small power
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
0.3
0.4
lFeatures
1) Ultra small mold type (HMD8)
2) Halogen Free
AD
HMD8 0.25
ROHM : HMD8
JEDEC : JEITA : -
lStructure
dot
(year week factory)
lConstruction
Silicon epitaxial planer
lTaping dimensions (Unit : mm)
lAbsolute maximum ratings (Ta=25C)
Parameter
Symbol
VR
Reverse voltage (DC)
Average rectified forward current (*1)
Io
Forward current surge peak (60Hz･1cyc.) (*2)
IFSM
Junction temperature
Tj
Storage temperature
Tstg
Power dissipation
Pd
(*1)(*2)Rating of per diode
lElectrical characteristics (Ta=25C)
Parameter
Symbol
VF
Forward voltage
Reverse current
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IR
Limits
30
100
500
150
-55 to +150
400
Unit
V
mA
mA
C
C
mW/Total
Min.
Typ.
Max.
Unit
-
-
0.46
V
-
-
0.3
μA
1/4
Conditions
IF=10mA
VR=10V
2011.11 - Rev.A
Data Sheet
RB520ZS8A30
1000000
100
Ta=125°C
Ta=150°C
Ta=150°C
Ta=125°C
10
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(mA)
100000
Ta=75°C
Ta=25°C
1
Ta=-25°C
10000
Ta=75°C
1000
Ta=25°C
100
10
Ta=-25°C
1
0.1
0.1
0
100
200
300
400
500
600
700
0
10
20
30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
430
10
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
FORWARD VOLTAGE:VF(mV)
f=1MHｚ
Ta=25°C
IF=10mA
n=30pcs
420
410
400
AVE:405.7mV
390
1
380
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
50
100
Ta=25°C
VR=10V
n=30pcs
80
70
60
50
40
AVE:19.93nA
30
40
35
30
25
20
15
AVE:6.3pF
20
10
10
5
0
0
Ct DISPERSION MAP
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
Ta=25°C
f=1MHz
VR=0V
45
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
90
2/4
2011.11 - Rev.A
Data Sheet
RB520ZS8A30
10
30
Tj=25°C
IF=0.1A
IR=0.1A
Irr=0.1×IR
n=10pcs
IFSM
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
9
25
8.3ms
20
15
10
AVE:4.30A
5
8
7
6
5
4
AVE:5.8ns
3
2
1
0
0
trr DISPERSION MAP
IFSM DISPERSION MAP
10
10
8.3ms
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
8.3ms
1cyc.
5
IFSM
t
5
0
0
1
10
1
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
0.15
Sin(θ＝180)
DC
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
1000
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
10
1
0.001
0.1
D=1/2
0.05
0
0.01
0.1
1
10
100
0
1000
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0.05
0.1
0.15
0.2
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
3/4
2011.11 - Rev.A
Data Sheet
RB520ZS8A30
30
0.005
25
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
REVERSE POWER
DISSIPATION:PR (W)
0.004
0.003
DC
0.002
D=1/2
0.001
Sin(θ＝180)
20
15
AVE:7.4kV
10
5
AVE:0.90kV
0
0
0
10
20
C=200pF
R=0Ω
30
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
4/4
2011.11 - Rev.A
Notice
Notes
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R1120A