General Purpose Transistor (−50V, −0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 Dimensions (Unit : mm) 2SA1576A 2.0 1.3 0.9 (1) (2) (3) 0.3 (2) 0.95 0.95 1.9 2.9 (3) 0.65 0.65 Structure Epitaxial planar type. PNP silicon transistor 0.7 (1) 2SA1037AK 0.4 1.25 1.6 2.1 0.3 to 0.6 0.1 to 0.4 Each lead has same dimensions (1) Emitter (2) Base (3) Collector ROHM : SMT3 EIAJ : SC-59 Abbreviated symbol : F ∗ Each lead has same dimensions (1) Emitter (2) Base (3) Collector ROHM : UMT3 EIAJ : SC-70 Abbreviated symbol : F ∗ 2SA2029 0.8 0.4 0.4 (3) (1) Emitter (2) Base (3) Collecto Abbreviated symbol : F ∗ 0.13 0 to 0.1 ROHM : VMT3 EIAJ : 0.22 0.5 0.7 0 to 0.1 0.55 0.15 ROHM : EMT3 EIAJ : SC-75A 0.2 (2) (1) 1.6 0.1Min. 1.2 0.8 0.2 1.2 0.32 0.8 0.2 (3) 1.6 (2) 1.0 0.5 0.5 (1) 0.2 2SA1774 0.3 0 to 0.1 0.15 1.1 0.8 0.15 0.2 2.8 0 to 0.1 Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658. 0.15Max. (1) Base (2) Emitter (3) Collector Abbreviated symbol : F ∗ ∗ Denotes hFE www.rohm.com c 2012 ROHM Co., Ltd. All rights reserved. ○ 1/3 2012.01 - Rev.C 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 Data Sheet Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −6 V Collector current IC −0.15 A (DC) Collector power 2SA1037AK, 2SA1576A dissipation 2SA2029, 2SA1774 PC Junction temperature Tj 150 ˚C Storage temperature Tstg −55 to +150 ˚C 0.2 W 0.15 Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO −60 − − V IC= −50μA Collector-emitter breakdown voltage BVCEO −50 − − V IC= −1mA Emitter-base breakdown voltage BVEBO −6 − − V IE= −50μA ICBO − − −0.1 μA VCB= −60V Collector cutoff current IEBO − − −0.1 μA VEB= −6V VCE(sat) − − −0.5 V IC/IB= −50mA/−5mA Emitter cutoff current Collector-emitter saturation voltage Conditions VCE= −6V, IC= −1mA hFE 120 − 390 − Transition frequency fT − 140 − MHz Output capacitance Cob − 4.0 5.0 pF DC current transfer ratio VCE= −12V, IE=2mA, f=100MHz VCB= −12V, IE=0A, f=1MHz Packaging specifications and hFE Package Type hFE 2SA2029 QR Taping Code T146 T106 TL T2L Basic ordering unit (pieces) 3000 3000 3000 8000 − − − − − − − − 2SA1037AK QR 2SA1576A QR − 2SA1774 QR − − − hFE values are classified as follows: Item Q R hFE 120 to 270 180 to 390 www.rohm.com c 2012 ROHM Co., Ltd. All rights reserved. ○ 2/3 2012.01 - Rev.C 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 Data Sheet Electrical characteristic curves −5 −2 −1 −0.5 −0.2 −0.1 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 Fig.1 Grounded emitter propagation characteristics −24.5 −21.0 −6 −17.5 −14.0 −4 −10.5 −7.0 −2 −3.5μA −0.4 −0.8 −1.2 −1.6 −250 −200 −150 −40 −100 −20 −50μA IB=0 0 −1 −2 −3 −4 −5 Fig.2 Grounded emitter output characteristics (I) Fig.3 Grounded emitter output characteristics (II) −40˚C 200 100 50 50 −1 Ta=25˚C −0.5 −0.2 IC/IB=50 −0.1 20 10 −0.05 −2 −5 −10 −20 −0.2 −0.5 −1 −50 −100 Fig.4 DC current gain vs. collector current (I) 1000 TRANSITION FREQUENCY : fT (MHz) −0.2 −0.1 Ta=100˚C 25˚C −40˚C −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current (II) www.rohm.com c 2012 ROHM Co., Ltd. All rights reserved. ○ 500 200 100 50 0.5 1 2 5 10 20 50 100 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth product vs. emitter current 3/3 −5 −10 −20 −50 −100 Fig.6 Collector-emitter saturation voltage vs. collector current (I) Ta=25˚C VCE= −12V lC/lB=10 −2 COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current (II) −0.5 −0.2 −0.5 −1 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) −1 VCE= −6V −5 −10 −20 −50 −100 −2 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) −0.2 −0.5 −1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −500 −450 −400 −350 −300 COLLECTOR TO EMITTER VOLTAGE : VCE (V) 25˚C 100 −60 Ta=25˚C COLLECTOR TO EMITTER VOLTAGE : VCE (V) Ta=100˚C 200 −80 IB=0 −2.0 500 VCE= −5V −3V −1V Ta=25˚C DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 500 −28.0 −8 0 BASE TO EMITTER VOLTAGE : VBE (V) −100 −31.5 COLLECTOR CURRENT : IC (mA) −10 −35.0 Ta=25˚C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −20 −10 VCE= −6V Ta=100˚C 25˚C −40˚C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) −50 20 Ta=25˚C f=1MHz IE=0A IC=0A Cib 10 Co b 5 2 −0.5 −1 −2 −5 −10 −20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage 2012.01 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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