ROHM QS6Z5

Data Sheet
Complex Midium Power Transistors (±50V/±1A)
QS6Z5
 Structure
NPN/PNP Silicon epitaxial planar transistor
 Dimensions (Unit : mm)
TSMT6
 Features
1) Low saturation voltage
V CE (sat) = 0.35V (Max.) (I C / I B= 500mA / 25mA)
V CE (sat) = 0.40V (Max.) (IC / I B= 500mA / 25mA)
(1) Tr.1 Base
(2) Tr.2 Emitter
(3) Tr.2 Base
(4) Tr.2 Collector
(5) Tr.1 Emitter
2) High speed switching
(6) Tr.1 Collector
 Applications
Low Frequency Amplifier
Driver
 Packaging specifications
Type
 Inner circuit (Unit : mm)
Package
TSMT6
Code
TR
Basic ordering unit (pieces) 3000
(6)
 Absolute maximum ratings (Ta = 25C)
<Tr.1>
Symbol
Limits
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
Emitter-base voltage
VCEO
50
6
1
2
V
V
A
A
Symbol
Limits
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
Emitter-base voltage
VCEO
VEBO
IC
ICP *1
50
6
V
V
1
A
A
Parameter
Collector current
DC
Pulsed
Abbreviated symbol : Z05
VEBO
IC
ICP *1
(1) Tr.1 Base
(2) Tr.2 Emitter
(3) Tr.2 Base
(4) Tr.2 Collector
(5) Tr.1 Emitter
(6) Tr.1 Collector
(1)
(5)
(2)
(4)
(3)
<Tr.2>
Parameter
Collector current
DC
Pulsed
2
<Tr.1 and Tr.2>
Symbol
Limits
Unit
PD
*2
Power dissipation
PD
PD
*3
0.5
1.25
W/Total
W/Total
0.9
W/Element
Junction temperature
Range of storage temperature
Tj
Tstg
150
55 to 150
C
C
Parameter
*3
*1 Pw=10ms, Single Pulse
*2 Mounted on a recommended land.
*3 Mounted on a 40 x 40 x 0.7[mm] ceramic board.
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1/7
2011.05 - Rev.A
Data Sheet
QS6Z5
Electrical characteristics (Ta = 25°C)
<Tr.1>
Parameter
Conditions
Symbol
Min.
Typ.
Max.
Unit
Collector-emitter breakdown voltage
BVCEO
50
-
-
V
IC= 1mA
Collector-base breakdown voltage
BVCBO
50
-
-
V
IC= 100μA
Emitter-base breakdown voltage
BVEBO
6
-
-
V
IE= 100μA
Collector cut-off current
ICBO
-
-
1
A
VCB= 50V
Emitter cut-off current
IEBO
-
-
1
A
VEB= 4V
VCE(sat)
-
130
350
hFE
180
-
450
-
-
360
-
MHz
Cob
-
7
-
pF
Turn-on time
ton *2
-
40
-
ns
Storage time
tstg *2
-
410
-
ns
-
75
-
ns
Symbol
Min.
Typ.
Max.
Unit
Collector-emitter breakdown voltage
BVCEO
50
-
-
V
IC= 1mA
Collector-base breakdown voltage
BVCBO
50
-
-
V
IC= 100μA
Emitter-base breakdown voltage
BVEBO
6
-
-
V
IE= 100μA
Collector cut-off current
ICBO
-
-
1
A
Emitter cut-off current
IEBO
-
-
1
*1
VCE(sat)
-
200
400
hFE
180
-
450
-
VCE= 2V, IC= 50mA
-
400
-
MHz
VCE= 10V
IE=200mA, f=100MHz
Collector-emitter staturation voltage
DC current gain
Transition frequency
Collector output capacitance
*1
fT
*1
tf
Fall time
*2
mV IC=500mA, I B=25mA
VCE= 2V, IC= 50mA
VCE= 10V
IE=200mA, f=100MHz
VCB= 10V, IE=0A
f=1MHz
IC= 0.5A, I B1= 50mA,
_10V
IB2=50mA, V CC ~
*1 Pulsed
*2 See switching time test circuit
<Tr.2>
Parameter
Collector-emitter staturation voltage
DC current gain
Transition frequency
fT
*1
A
mV IC= 500mA, I B= 25mA
Cob
-
12
-
pF
Turn-on time
ton *2
-
40
-
ns
Storage time
tstg *2
-
250
-
ns
-
35
-
ns
tf
*2
VCB= 50V
VEB= 4V
Collector output capacitance
Fall time
Conditions
VCB= 10V, IE=0A
f=1MHz
IC= 0.5A, I B1= 50mA,
_ 10V
IB2= 50mA, V CC ~
*1 Pulsed
*2 See switching time test circuit
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2/7
2011.05 - Rev.A
Data Sheet
QS6Z5
Electrical characteristic curves (Ta=25C)
〈Tr.1〉
Fig.2 Typical OutputCharacteristics
2.0mA
3.0mA 2.5mA
Fig.1 Ground Emitter Propagation Characteristics
5mA
10000
0.50
VCE=2V
0.45
COLLECTOR CURRENT : IC[A]
COLLECTOR CURRENT :IC[mA]
4mA
1000
Ta=125°C
75°C
25°C
100
-40°C
10
1.5mA
0.40
0.35
0.30
1.0mA
0.25
0.20
0.15
IB=0.5mA
0.10
0.05
Ta=25°C
0.00
1
0
0.5
1
0
1.5
1.5
2
1000
VCE=2V
DC CURRENT GAIN :hFE
Ta=25°C
VCE=5V
2V
100
10
Ta=125°C
100
75°C
25°C
-40°C
10
1
10
100
1000
10000
1
10
COLLECTOR CURRENT : IC[mA]
100
1000
10000
COLLECTOR CURRENT : IC[mA]
Fig.5 Collector-Emitter Saturation Voltage
vs. Collector Current ( I )
Fig.6 Collector-Emitter Saturation Voltage
vs. Collector Current(II)
1
1
Ta=25°C
COLLECTOR SATURATION VOLTAGE :VCE(sat)[V]
COLLECTOR SATURATION VOLTAGE : VCE(sat)[V]
1
Fig.4 DC Current Gain vs.Collector Current ( II )
Fig.3 DC Current Gain vs. Collector Current ( I )
1000
DC CURRENT GAIN : hFE
0.5
COLECTOR TO EMITTER VOLTAGE : VCE[V]
BASE TO EMITTER VOLTAGE : VBE[V]
0.1
IC/IB=50
20
10
0.01
0.001
1
10
100
1000
10000
0.1
Ta=125°C
75°C
0.01
25°C
-40°C
0.001
1
COLLECTOR CURRENT : IC[mA]
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IC/IB=20
10
100
1000
10000
COLLECTOR CURRENT : IC[mA]
3/7
2011.05 - Rev.A
Data Sheet
QS6Z5
Fig.8 Gain BandwidthProduct vs. Emitter
1000
1000
Ta=25°C
VCE=10V
Ta=25°C
f=1MHz
IE=0A
IC=0A
TRANSITION FREQUENCY : fT[MHz]
EMITTER INPUT CAPACITANCE : Cib[pF]
COLLECTOR OUTPUT CAPACITANCE : Cob[pF]
Fig.7 Emitter input capacitance vs. Emitter-Base Voltage
Collector output capacitance vs. Collector-Base
Cib
100
10
Cob
1
100
10
0.1
1
10
100
COLLECTOR - BASE VOLTAGE : VCB [V]
EMITTER - BASE VOLTAGE : VEB [V]
10
100
1000
EMITTER CURRENT : IE[mA]
Fig.9 Safe Operating Area
10
COLLECTOR CURRENT : IC [A]
1ms
10ms
1
100ms
0.1
DC
0.01
Ta=25°C
single non repetitive pulse
Mounted on a recommended land
When one element operated
0.001
0.1
1
10
100
COLLECTOR TO EMITTER VOLTAGE :VCE[V]
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2011.05 - Rev.A
Data Sheet
QS6Z5
〈Tr.2〉
Fig.1 Ground Emitter Propagation Characteristics
Fig.2 Typical Output Characteristics
-10000
-0.5
-4.0mA
VCE= -2V
-3.0mA
-1000
COLLECTOR CURRENT : IC[A]
COLLECTOR CURRENT : IC[mA]
-5.0mA
Ta=125°C
75°C
25°C
-40°C
-100
-10
-2.0mA
-0.3
-1.5mA
-0.2
-1.0mA
-0.1
IB= -0.5mA
0.0
-1
0
-0.5
-1
0
-1.5
Fig.3 DC Current Gain vs. Collector Current ( I )
-1
-1.5
-2
Fig.4 DC Current Gain vs. Collector Current ( II )
1000
1000
VCE= -2V
DC CURRENT GAIN : hFE
Ta=25°C
DC CURRENT GAIN : hFE
-0.5
COLECTOR TO EMITTER VOLTAGE : VCE[V]
BASE TO EMITTER VOLTAGE : VBE[V]
VCE= -5V
-2V
100
10
100
Ta=125°C
75°C
25°C
-40°C
10
-1
-10
-100
-1000
-10000
-1
-10
COLLECTOR CURRENT : IC[mA]
-100
-1000
-10000
COLLECTOR CURRENT : IC[mA]
Fig.5 Collector-Emitter Saturation
Voltage vs. Collector Current ( I )
Fig.6 Collector-Emitter Saturation
Voltage vs. Collector Current ( II )
-1
-1
Ta=25°C
COLLECTOR SATURATION VOLTAGE : VCE(sat)[V]
COLLECTOR SATURATION VOLTAGE : VCE(sat)[V]
-2.5mA
-0.4
-0.1
IC/IB=50
20
10
-0.01
-0.001
-1
-10
-100
-1000
-10000
-0.1
Ta=125°C
75°C
25°C
-0.01
-40°C
-0.001
-1
COLLECTOR CURRENT : IC[mA]
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IC/IB=20
-10
-100
-1000
-10000
COLLECTOR CURRENT : IC[mA]
5/7
2011.05 - Rev.A
Data Sheet
QS6Z5
Fig.8 Gain Bandwidth Product vs. Emitter
1000
1000
Ta=25°C
f=1MHz
IE=0A
IC=0A
Cib
100
10
Cob
1
-0.1
Ta=25°C
VCE= -10V
TRANSITION FREQUENCY : fT[MHz]
EMITTER INPUT CAPACITANCE : Cib(pF)
COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
Fig.7 Emitter Input Capacitance vs. Emitter-Base Voltage
Collector Output Capacitance vs.Collector-Base Voltage
100
10
10
-1
-10
-100
COLLECTOR - BASE VOLTAGE : VCB [V]
EMITTER - BASE VOLTAGE : VEB [V]
100
1000
EMITTER CURRENT : IE[mA]
Fig.9 Safe Operating Area
-10
COLLECTOR CURRENT : IC[A]
1ms
10ms
-1
100ms
-0.1
DC
-0.01
Ta=25°C
single non repetitive pulse
Mounted on a recommended land
When one element operated
-0.001
-0.1
-1
-10
-100
COLLECTOR TO EMITTER VOLTAGE : VCE[V]
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2011.05 - Rev.A
Data Sheet
QS6Z5
 Switching time test circuit
RL =20Ω
<Tr.1>
I B1
VIN
IC
VCC
_
~ 10V
I B2
~50μs
Pw _
DUTY CYCLE≦1%
Pw
I B1
BASE CURRENT WAVEFORM
I B2
t on
t stg
tf
COLLECTOR CURRENT WAVEFORM
90%
IC
10%
RL=20Ω
<Tr.2>
IB1
VIN
IC
Pw
_ 10V
VCC ~
IB2
_ 50μs
Pw ~
DUTY CYCLE≦1%
IB2
IB1
BASE CURRENT WAVEFORM
ton
COLLECTOR CURRENT WAVEFORM
tstg
tf
90%
IC
10%
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7/7
2011.05 - Rev.A
Notice
Notes
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R1120A