Data Sheet Schottky Barrier Diode RB160M-90 Dimensions (Unit : mm) Applications General rectification Land size figure (Unit : mm) 0.1±0.1 0.05 1.2 0.85 1.6±0.1 2.6±0.1 ① 3.5±0.2 3.05 Features 1)Small power mold type.（PMDU） 2)Low IR 3)High reliability PMDU Construction Silicon epitaxial planar Structure 0.9±0.1 0.8±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date Taping specifications (Unit : mm) 4.0±0.1 1.81±0.1 Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg 8.0±0.2 3.71±0.1 0.25±0.05 1.75±0.1 φ1.55±0.05 2.0±0.05 3.5±0.05 4.0±0.1 φ1.0±0.1 Limits Unit 90 90 1 30 150 40 to 150 V V A A C C 1.5MAX (*1)Mounted on epoxy board. 180°Half sine wave Electrical characteristic (Ta=25°C) Parameter Symbol VF Min. Typ. Max. Unit Forward voltage - - 0.73 V Reverse current IR - - 100 μA www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 Conditions IF=1.0A VR=90V 2011.04 - Rev.C Data Sheet RB160M-90 Ta=150℃ 1 Ta=125℃ 1000 10000 条件：f=1MHz f=1MHz Ta=25℃ 0.1 Ta=150℃ Ta=-25℃ 0.01 1000 Ta=75℃ 100 Ta=25℃ 10 1 Ta=-25℃ 0.1 0 100 200 300 400 500 600 10 20 30 40 50 60 70 80 90 0 AVE:632.1mV 620 610 80 70 60 50 40 30 AVE:478.3nA σ:36.1612nA 20 AVE:4.655uA VF DISPERSION MAP 170 160 150 140 120 Ct DISPERSION MAP 100 8.3ms 100 50 AVE:56.0A Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 AVE:7.40ns 10 5 PEAK SURGE FORWARD CURRENT:IFSM(A) REVERSE RECOVERY TIME:trr(ns) 150 AVE:149.6pF 130 30 1cyc Ifsm 8.3ms 8.3ms 1cyc 50 0 0 0 1 trr DISPERSION MAP IFSM DISPERSION MAP 1000 Mounted on epoxy board Ifsm TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) IM=10mA t 100 10 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 100 2 Rth(j-a) 100 1ms time 1.5 300us Rth(j-c) 10 1 0.1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IF=0.5A 0.001 0.01 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 2/3 100 1000 FORWARD POWER DISSIPATION:Pf(W) 1000 30 Ta=25℃ f=1MHz VR=0V n=10pcs 180 IR DISPERSION MAP Ifsm 25 100 0 200 20 110 10 600 15 190 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 630 Ta=25℃ Ta=25℃ VR=90V VR=100V n=30pcs n=30pcs 90 REVERSE CURRENT:IR(uA) 640 10 200 100 Ta=25℃ IF=1A n=30pcs 5 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 650 PEAK SURGE FORWARD CURRENT:IFSM(A) 10 1 0 700 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) 100 0.01 0.001 FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=75℃ D=1/2 1 DC Sin(θ＝180) 0.5 0 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2 2011.04 - Rev.C Data Sheet RB160M-90 1 3 0.6 D=1/2 DC 0.4 0.2 2.5 2 DC Io t T VR D=t/T VR=45V Tj=150℃ 1.5 D=1/2 1 Sin(θ＝180) 0.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 0.8 3 0A 0V 0A 0V 2.5 2 DC 1.5 Io t T VR D=t/T VR=45V Tj=150℃ D=1/2 1 Sin(θ＝180) 0.5 Sin(θ＝180) 0 0 10 20 30 40 50 60 70 80 90 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 150 ELECTROSTATIC DISCHARGE TEST ESD(KV) 30 25 20 AVE:10.7kV 15 10 AVE:1.70kV 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.C Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A