ACE6344B N&P-Channel Enhancement Mode MOSFET Description The ACE634B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level Features N-Channel VDS(V)=20V, ID=3A, RDS(ON) <65mΩ (VGS=4.5V) <90mΩ (VGS=2.5V) P-Channel VDS(V)=-20V, ID=-2.5A , RDS(ON) <110mΩ (VGS=-4.5V) <140mΩ (VGS=-2.5V) Absolute Maximum Ratings (TA=25℃ Unless otherwise noted) Typical Parameter Symbol Drain-Source Voltage VDSS 20 -20 V Gate-Source Voltage VGSS ±12 ±12 V Continuous Drain Current (TJ=150℃) TA=25℃ *AC TA=70℃ ID 3 -2.5 2.4 -2.2 Drain Current (pulse) * B IDM 13 -13 1.15 1.15 0.73 0.73 Power Dissipation TA=25℃ N-Channel P-Channel PD TA=70℃ Operating temperature / Storage temperature TJ/ TSTG -55 to 150 Unit A A W O C Packaging Type SOT-23-6L Marking . 2003 VER 1.1 1 ACE6344B N&P-Channel Enhancement Mode MOSFET Ordering information ACE6344B XX + H Halogen - free Pb - free GM : SOT-23-6L Electrical Characteristics (N-Channel)(TA=25℃ Unless otherwise noted) Parameter Symbol Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current V(BR)DSS IDSS VGS(th) IGSS Drain-Source On Resistance RDS(ON) Forward Transconductance Diode Forward Voltage gFS VSD Maximum Body-Diode Continuous Current IS Conditions Static VGS=0V, ID=250uA VDS=20V, VGS=0V VDS=VGS, ID=250uA VGS=±12V ,VDS=0V VGS=4.5V, ID=3A VGS=2.5V, ID=2.8A VDS=5V, ID=-3A ISD=-1.7A, VGS=0V Min. Typ. Max. Unit 20 0.5 1 0.75 1.2 ±100 36 65 53 90 8 0.74 1.2 2.5 V uA V nA mΩ mΩ S V A Switching Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn- Off Rise Time Qg Qgs Qgd td(on) tr td(off) tf VGS=4.5V,VDS=-10V, ID=3A VDS=10V, ID=3A, VGS=4.5V,RG=3Ω 2.9 0.4 0.6 2.5 3.2 21 3 5 nC ns Dynamic Input Capacitance Output Capacitance Reverse Transfer capacitance Ciss Coss Crss VDS=10V,VGS=0V, F=1.0MHZ 260 48 27 pF Note: A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. VER 1.1 2 ACE6344B N&P-Channel Enhancement Mode MOSFET Typical Characteristics (N-Channel) Figure 1 Switching Test Circuit TJ-Junction Temperature (℃) Figure 3 Power Dissipation Vds Gate-Source Voltage(V) Figure 5 Output Characteristics Figure 2 Switching Waveforms TJ -Junction Temperature (℃) Figure 4 Drain Current I D-Drain Current(A) Figure 6 Drain - Source On - Resistance VER 1.1 3 ACE6344B N&P-Channel Enhancement Mode MOSFET Typical Characteristics (N-Channel) Vgs Gate-Source Voltage(V) Figure 7 Transfer Characteristics TJ -Junction Temperature (℃) Figure 8 Drain – Source On-Resistance Vgs Gate-Source Voltage(V) Figure 9 Rdson vs Vgs Vds Drain – Source Voltage(V) Figure 10 Capacitance vs Vds Qg Gate Charge(nC) Figure 11 Gate Charge Vsd Source-Drain Voltage(V) Figure 12 Source- Drain Diode Forward VER 1.1 4 ACE6344B N&P-Channel Enhancement Mode MOSFET Typical Characteristics (N-Channel) Vds Drain-Source Voltage(V) Figure 13 Safe Operation Area Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance VER 1.1 5 ACE6344B N&P-Channel Enhancement Mode MOSFET Electrical Characteristics (P-Channel)(TA=25℃ Unless otherwise noted) Parameter Symbol Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current V(BR)DSS IDSS VGS(TH) IGSS Drain-Source On Resistance RDS(ON) Forward Transconductance Diode Forward Voltage Maximum Body-Diode Continuous Current gFS VSD Conditions Static VGS=0V, ID=-250uA VDS=-20V, VGS=0V VDS=VGS, ID=-250uA VGS=±12V ,VDS=0V VGS=-4.5V, ID=-2.5A VGS=-2.5V, ID=-2A VDS=-5V, ID=-2.5A ISD=-3A, VGS=0V Min. Typ. Max. Unit -20 -0.4 -0.7 80 110 9.5 IS -1.2 V uA V nA mΩ mΩ S V -2.5 A -1 -1 ±100 110 140 Switching Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn- Off Rise Time Qg Qgs Qgd td(on) tr td(off) tf VGS=-4.5V,VDS=-10V, ID=-2A VDD=-10V, RL=5Ω, ID=-2A, VGEN=-4.5V, RG=3Ω 3.2 0.6 0.9 11 5.5 22 8 nC ns Dynamic Input Capacitance Output Capacitance Reverse Transfer capacitance Ciss Coss Crss VGS=-10V,VGS=0V, F=1.0MHZ 325 63 37 pF Note: A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. VER 1.1 6 ACE6344B N&P-Channel Enhancement Mode MOSFET Typical Characteristics (P-Channel) Figure 1 Switching Test Circuit TJ -Junction Temperature (℃) Figure 3 Power Dissipation -Vds Gate-Source Voltage(V) Figure 5 Output Characteristics Figure 2 Switching Waveforms TJ -Junction Temperature (℃) Figure4 Drain Current -ID-Drain Current(A) Figure 6 Drain-Source On-Resistance VER 1.1 7 ACE6344B N&P-Channel Enhancement Mode MOSFET Typical Characteristics (P-Channel) -Vgs Gate-Source Voltage(V) Figure 7 Transfer Characteristics -Vgs Gate-Source Voltage(V) Figure 9 Rdson vs Vgs Qg Gate Charge(nC) Figure 11 Gate Charge TJ -Junction Temperature (℃) Figure 8 Drain – Source On-Resistance -Vsd Drain – Source Voltage(V) Figure 10 Capacitance vs Vds -Vsd Source-Drain Voltage(V) Figure 12 Source- Drain Diode Forward VER 1.1 8 ACE6344B N&P-Channel Enhancement Mode MOSFET Typical Characteristics (P-Channel) -Vds Drain -Source Voltage(V) Figure 13 Safe Operation Area Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance VER 1.1 9 ACE6344B N&P-Channel Enhancement Mode MOSFET Packing Information SOT-23-6L Unit: mm VER 1.1 10 ACE6344B N&P-Channel Enhancement Mode MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 11