ACE2607B - ACE Technology Co., LTD.

ACE2607B
P-Channel Enhancement Mode Field Effect Transistor
Description
ACE2607B is produced with high cell density, DMOS trench technology, which is especially used to
minimize on-state resistance. This device particularly suits for low voltage application such as portable
equipment, power management and other battery powered circuits, and low in-line power loss are needed
in a very small outline surface mount package.
Features




VDS(V)=-30V, ID=-3.5A
RDS(ON)[email protected]=-10V
RDS(ON)[email protected]=-4.5V
High density cell design for low RDS(ON)
Absolute Maximum Ratings
Parameter
Symbol
Max
Unit
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
Drain Current (Note 1)
Continuous TA=25℃
Pulse (Note 2)
Power Dissipation(1) (Note 1)
ID
PD
-3.5
-20
650
Operating and Storage Temperature Range TJ,TSTG -55 to 150
A
mW
O
C
Packaging Type
SOT-23-6L
1
VER 1.3
1
ACE2607B
P-Channel Enhancement Mode Field Effect Transistor
Ordering information
ACE2607B XX + H
Halogen - free
Pb - free
GM : SOT-23-6L
Electrical Characteristics
O
TA=25 C unless otherwise noted
Parameter
Symbol
Conditions
Min.
Typ.
-30
-34
Max.
Unit
On/Off characteristics
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V, ID=250uA
Zero Gate Voltage Drain Current
IDSS
VDS=-24V, VGS=0V
-3
-200
nA
Gate Leakage Current
IGSS
VGS=±20V, VDS=0V
±1.5
±50
nA
VGS=-10V, ID=-5A
52
65
VGS=-4.5V, ID=-4A
68
85
-1.3
-3
On characteristics
b
Static Drain-Source On-Resistance
RDS(ON)
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=-250uA
Forward Transconductance
gFS
VDS=-5V, ID=-6A
Switching characteristics
Turn-On Delay Time
Td(on)
Turn-Off Delay Time
Td(off)
V
-1
12
mΩ
V
S
b
8.6
VDD=-15V, RL=2.5Ω,
VGS=-10V, RGEN=3Ω
ns
28.2
Dynamic characteristics
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
550
VDS=-15V, VGS=0V
f=1.0MHz
Drain-source diode characteristics and maximum ratings
Drain-Source Diode Forward
VSD
VGS=0V, IS=-1A (2)
Voltage
60
pF
50
b
-0.81
V
Note: 1. The value of PD is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment
with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is
based on the DC thermal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
VER 1.3
2
ACE2607B
P-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
VER 1.3
3
ACE2607B
P-Channel Enhancement Mode Field Effect Transistor
Packing Information
SOT-23-6L
Unit: mm
VER 1.3
4
ACE2607B
P-Channel Enhancement Mode Field Effect Transistor
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.3
5