ACE1511A P-Channel Enhancement Mode MOSFET Description The ACE1511A is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. Features • • • • P-Channel -20V/0.45A,RDS(ON)= 0.52Ω@VGS=-4.5V -20V/0.35A,RDS(ON)= 0.70Ω@VGS=-2.5V -20V/0.25A,RDS(ON)= 0.95Ω@VGS=-1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-723 package design Applications • • • Drivers : Relays/Solenoids/Lamps/Hammers Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers Absolute Maximum Ratings (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V ID -0.45 A Pulsed Drain Current IDM -1.0 A Continuous Source Current (Diode Conduction) IS -0.3 A PD 0.15 Continuous Drain Current (TJ=150℃) Power Dissipation TA=25℃ TA=25℃ Operating Junction Temperature / Storage Temperature Range TJ/TSTG -55/150 W O C VER 1.1 1 ACE1511A P-Channel Enhancement Mode MOSFET Packaging Type SOT-723 D D1 3 G1 1 2 G S S1 PIN DESCRIPTION Pin Symbol Description 1 G Gate 2 S Source 3 D Drain Ordering information ACE1511A XX + H Halogen - free Pb - free JM : SOT-723 Electrical Characteristics TA=25℃, unless otherwise noted. Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V, ID=-250 uA -20 VGS(th) VDS=VGS, ID=-250uA -0.35 Gate Leakage Current IGSS VDS=0V,VGS=±12V ±30 Zero Gate Voltage Drain Current IDSS VDS=-20V, VGS=0V -1 VDS=-20V, VGS=0V, TJ=55℃ -5 On-State Drain Current ID(on) Drain-Source On-Resistance RDS(ON) VDS≤ -4.5V,VGS =-5V V -0.8 -0.7 uA uA A VGS=-4.5V, ID=-0.45A 0.42 0.52 VGS=-2.5V, ID=-0.35A 0.58 0.70 VGS=-1.8V, ID=-0.25A 0.75 0.95 VER 1.1 Ω 2 ACE1511A P-Channel Enhancement Mode MOSFET Forward Transconductance Diode Forward Voltage gfs VDS=-10V,ID=-0.25A 0.4 S VSD IS=-0.15A, VGS=0V -0.8 -1.2 1.5 2.0 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 0.35 td(on) 5 10 15 25 8 15 1.4 1.8 Turn-On Time Turn-Off Time tr td(off) tf VDS=-10V, VGS=-4.5V, ID≡-0.6A VGEN=-4.5V, ID≡-0.4A, VDD=-10V, RG=6Ω, RL=10Ω 0.3 nC ns Typical Performance Characteristics VER 1.1 3 ACE1511A P-Channel Enhancement Mode MOSFET Typical Performance Characteristics VER 1.1 4 ACE1511A P-Channel Enhancement Mode MOSFET Typical Performance Characteristics VER 1.1 5 ACE1511A P-Channel Enhancement Mode MOSFET Packing Information SOT-723 VER 1.1 6 ACE1511A P-Channel Enhancement Mode MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 7