ACE8212B

ACE8212B
Common Dual N-Channel Enhancement Mode Field Effect Transistor with ESD
Description
The ACE8212B uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is
suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain
configuration.
Features
•
•
•
•
•
VDS(V)=20V
ID=8A (VGS=10V)
TSSOP-8
RDS(ON)<13 mΩ (VGS=10V)
RDS(ON)<14 mΩ (VGS=4.5V)
RDS(ON)<19 mΩ (VGS=2.5V)
RDS(ON)<27 mΩ (VGS=1.8V)
DFN2*5
RDS(ON)<13 mΩ (VGS=10V)
RDS(ON)<16 mΩ (VGS=4.5V)
RDS(ON)<22 mΩ (VGS=2.5V)
RDS(ON)<35 mΩ (VGS=1.8V)
ESD Protected: 2000V
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current *AC
TA=25℃
TA=70℃
Pulsed Drain Current
TSSOP-8
Power Dissipation
DFN2*5
ID
IDM
TA=25℃
TA=70℃
6.4
30
A
A
1.5
TA=25℃
TA=70℃
8
PD
1
1.6
W
1
Operating Junction Temperature / Storage Temperature Range TJ/TSTG -55/150
O
C
VER 1.3
1
ACE8212B
Common Dual N-Channel Enhancement Mode Field Effect Transistor with ESD
Packaging Type
TSSOP-8
DFN2*5
Ordering information
ACE8212B XX + H
Halogen - free
Pb - free
TM : TSSOP-8
JN : DFN2*5
VER 1.3
2
ACE8212B
Common Dual N-Channel Enhancement Mode Field Effect Transistor with ESD
Electrical Characteristics
TA=25℃, unless otherwise noted.
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V, ID=250 uA
20
Gate Threshold Voltage
VGS(th)
VDS=VGS, IDS=250uA
0.5
Gate Leakage Current
Zero Gate Voltage Drain
Current
Maximum Body-Diode
Continuous Current
IGSS
VDS=0V,VGS=±12V
10
uA
IDSS
VDS=20V, VGS=0V
1
uA
2.4
A
Drain-Source On-Resistance
(TSSOP-8)
Drain-Source On-Resistance
(DFN2*5)
V
0.72
IS
RDS(ON)
RDS(ON)
1
VGS=10V, ID=8A
8.2
13
VGS=4.5V, ID=5A
9.2
14
VGS=2.5V, ID=4A
12
19
VGS=1.8V, ID=3A
18
27
VGS=10V, ID=8A
10
13
VGS=4.5V, ID=7A
11
16
VGS=2.5V, ID=6A
14
22
VGS=1.8V, ID=4.5A
21
35
Forward Transconductance
gfs
VDS=10V,ID=8A
30
Diode Forward Voltage
VSD
ISD=1A, VGS=0V
0.72
1.0
4.65
6.05
1.12
1.46
mΩ
mΩ
S
V
Switching
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
3.72
4.84
td(on)
487.6
975.2
800.4
1600.8
1728
3456
6180
12360
Turn-On Time
Turn-Off Time
tr
td(off)
VDS=10V, VGS=4.5V, ID=8A
VGS=10V, RL=10Ω, VDS=10V,
RGEN=3Ω
tf
nC
ns
Dynamic
Input Capacitance
Ciss
Output Capacitance
REVERSE Transfer
Capacitance
Coss
Crss
36.45
VGS=0V, VDS=10V, f=1MHz
183.88
pF
14.57
VER 1.3
3
ACE8212B
Common Dual N-Channel Enhancement Mode Field Effect Transistor with ESD
Note:
1. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
2. Repetitive rating, pulse width limited by junction temperature.
3. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Typical Performance Characteristics
VER 1.3
4
ACE8212B
Common Dual N-Channel Enhancement Mode Field Effect Transistor with ESD
Typical Performance Characteristics
VER 1.3
5
ACE8212B
Common Dual N-Channel Enhancement Mode Field Effect Transistor with ESD
Typical Performance Characteristics
VER 1.3
6
ACE8212B
Common Dual N-Channel Enhancement Mode Field Effect Transistor with ESD
Packing Information
TSSOP-8
Unit: mm
VER 1.3
7
ACE8212B
Common Dual N-Channel Enhancement Mode Field Effect Transistor with ESD
Packing Information
DFN2*5
BOTTOM VIEW
Unit: mm
VER 1.3
8
ACE8212B
Common Dual N-Channel Enhancement Mode Field Effect Transistor with ESD
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.3
9