ACE4884

ACE4884
N-Channel Enhancement Mode MOSFET
Description
The ACE4884 is the Dual N-Channel enhancement mode power field effect transistors are produced
using high cell density , DMOS trench technology. This high density process is especially tailored to
minimize on-state resistance and provide superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer power management and other battery
powered circuits where high-side switching , low in-line power loss, and resistance to transients are
needed.
Features
 N-Channel
40V/10A,RDS(ON)= [email protected]= 10V
40V/ 8A,RDS(ON)= [email protected]= 4.5V
40V/ 6A,RDS(ON)= [email protected]= 2.5V
 Super high density cell design for extremely low RDS (ON)
 Exceptional on-resistance and maximum DC current capability
 SOP – 8P package design
APPLICATIONS







Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
Absolute Maximum Ratings
TA=25℃ Unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
VGSS
TA=25℃
TA=70℃
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
TA=25℃
Power Dissipation
TA=70℃
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to
Ambient
ID
Unit
40
V
±20
V
10.0
A
8.0
IDM
25
A
Is
2.3
A
PD
TJ
TSTG
T ≤ 10sec
Steady State
Typical
RθJA
2.5
W
1.6
-55/150
-55/150
50
80
℃
℃
℃/W
VER 1.1
1
ACE4884
N-Channel Enhancement Mode MOSFET
Packaging Type
SOP-8
PIN DESCRIPTION
Pin
Symbol
Description
1
S1
Source 1
2
G1
Gate 1
3
S2
Source 2
4
G2
Gate 2
5
D2
Drain 2
6
D2
Drain 2
7
D1
Drain 1
8
D1
Drain 1
Ordering information
ACE4884 XX + H
Halogen - free
Pb - free
FM : SOP-8
VER 1.1
2
ACE4884
N-Channel Enhancement Mode MOSFET
Electrical Characteristics
TA=25℃, unless otherwise noted.
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
VDS=40V,VGS=0V
IDSS
VDS=40V,VGS=0V
ID(on)
RDS(on)
VDS= 5V,VGS =4.5V
VGS= 10V,ID=10A
VGS=4.5V,ID= 8A
VGS=2.5V,ID= 6A
40
0.5
1.0
±100
1
10
10
V
nA
uA
A
0.014
0.017
0.024
0.020
0.024
0.030
Forward Transconductance
gfs
VDS=15V,ID=6.2A
13
Diode Forward Voltage
VSD
IS=2.3A,VGS =0V
0.8
1.2
10
14
Ω
S
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Time
Turn-Off Time
VDS=20V,VGS=4.5
V ID= 5A
3.2
VDS=20V,VGS=0V
f=1MHz
td(on)
tr
td(off)
tf
nC
2.8
850
pF
110
75
6
12
VDD=20V,RL=4Ω
10
20
ID≡5.0A,VGEN=10V
20
36
RG=1Ω
6
12
VER 1.1
nS
3
ACE4884
N-Channel Enhancement Mode MOSFET
Typical Performance Characteristics
VER 1.1
4
ACE4884
N-Channel Enhancement Mode MOSFET
Typical Performance Characteristics
VER 1.1
5
ACE4884
N-Channel Enhancement Mode MOSFET
Packing Information
SOP-8
VER 1.1
6
ACE4884
N-Channel Enhancement Mode MOSFET
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.1
7