Transistor Small switching (30V, 0.1A) UM6K1N Features 1) Two 2SK3018 transistors in a single UMT package. 2) The MOSFET elements are independent, eliminating interference. 3) Mounting cost and area can be cut in half. 4) Low on-resistance. 5) Low voltage drive (2.5V) makes this device ideal for portable equipment. Applications Interfacing, switching (30V, 100mA) External dimensions (Units: mm) Equivalent circuit Structure Silicon N-channel MOSFET Absolute maximum ratings (Ta = 25C) 194 Packaging specifications Transistor UM6K1N Electrical characteristics (Ta = 25C) Electrical characteristic curves Fig.1 Typical output characteristics Fig.2 Typical transfer characteristics Fig.3 Gate threshold voltage vs. channel temperature 195 Transistor UM6K1N Fig.6 Static drain-source on-state resistance vs. gate-source voltage Fig.7 Static drain-source on-state resistance vs. channel temperature Fig.8 Forward transfer admittance vs. drain current Fig.11 196 Typical capacitance vs. drain-source voltage Fig.12 Switching characteristics (See Figures 13 and 14 for the measurement circuit and resultant waveforms) Transistor UM6K1N Switching characteristics measurement circuit 197