Preliminary Datasheet 2SK1400A Silicon N Channel MOS FET High Speed Power Switching REJ03G0940-0300 Rev.3.00 Apr 01, 2010 Features Low on-resistance RDS(on) = 0.6 typ. (at ID = 4 A, VGS = 10 V, Ta = 25°C) High speed switching Low drive current Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D G 1 2 1. Gate 2. Drain (Flange) 3. Source S 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID Note1 ID(pulse) IDR Pch Note2 Tch Tstg Ratings 350 30 7 28 7 50 150 –55 to +150 Unit V V A A A W °C °C Notes: 1. PW 10 s, duty cycle 1% 2. Value at TC = 25°C REJ03G0940-0300 Rev.3.00 Apr 01, 2010 Page 1 of 6 2SK1400A Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage RDS(on) Body to drain diode reverse recovery time Note: |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 350 30 — — 2.0 — Typ — — — — — 0.6 Max — — 10 250 3.0 0.8 Unit V V A A V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 280 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 4 A, VGS = 10 V Note3 3.0 — — — — — — — — — 5.0 635 230 40 10 50 60 40 1.0 240 — — — — — — — — — — S pF pF pF ns ns ns ns V ns ID = 4 A, VDS = 10 V Note3 VDS = 10 V VGS = 0 f = 1 MHz ID = 4 A VGS = 10 V RL = 7.5 IF = 7 A, VGS = 0 Note3 IF = 7 A, VGS = 0 diF/dt = 100 A/s 3. Pulse test REJ03G0940-0300 Rev.3.00 Apr 01, 2010 Page 2 of 6 2SK1400A Preliminary Main Characteristics Typical Output Characteristics Maximum Safe Operation Area 100 10 5.5 V 6V 10 V 10 = 10 0 Drain Current ID (A) 10 PW μs μs Operation in this area is limited by RDS(on) 1 0.1 1 10 100 1000 4 4.5 V 2 4V VGS = 3.5 V 0 4 12 8 16 20 Drain to Source Voltage VDS (V) Typical Transfer Characteristics Static Drain to Source on State Resistance vs. Drain Current (Typical) VDS = 20 V Pulse Test 8 6 4 75°C Ta = 25°C 2 –25°C 2 0 4 6 10 8 5 2 VGS = 10 V Ta = 25°C Pulse Test 1 0.5 0.2 0.1 0.05 0.5 1.0 5 2 10 20 50 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Resistance vs. Temperature (Typical) Body to Drain Diode Reverse Recovery Time (Typical) 2.0 500 VGS = 10 V Pulse Test Reverse Recovery Time t rr (ns) Drain Current ID (A) 5V 6 Drain to Source Voltage VDS (V) 10 Static Drain to Source on State Resistance RDS (on) (Ω) 8 Ta = 25°C Pulse Test Tc = 25°C 1 shot Static Drain to Source on State Resistance RDS (on) (Ω) Drain Current ID (A) 15 V 1.6 ID = 10 A 1.2 5A 0.8 2A 0.4 0 –40 0 40 80 120 Case Temperature TC (°C) REJ03G0940-0300 Rev.3.00 Apr 01, 2010 160 200 100 50 20 10 5 0.2 di/dt = 50 A/μs, VGS = 0 Ta = 25°C, Pulse Test 0.5 1 2 5 10 20 Reverse Drain Current IDR (A) Page 3 of 6 2SK1400A Preliminary Typical Capacitance vs. Drain to Source Voltage Dynamic Input Characteristics (Typical) Capacitance C (pF) Ciss 1000 Coss 100 Crss VGS = 0 V f = 1 MHz Ta = 25°C 500 20 VDD = 50 V 100 V 200 V 400 300 200 10 20 30 50 40 VDS 8 100 Drain to Source Voltage VDS (V) 0 12 VGS 4 200 V 100 V VDD = 50 V 10 0 16 8 16 ID = 7 A Ta = 25°C Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) 10000 0 24 32 40 Gate Charge Qg (nc) Reverse Drain Current vs. Source to Drain Voltage (Typical) Reverse Drain Current IDR (A) 10 VGS = 0 Ta = 25°C Pulse Test 8 6 4 2 0 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) REJ03G0940-0300 Rev.3.00 Apr 01, 2010 Page 4 of 6 Preliminary Normalized Transient Thermal Impedance γS (t) 2SK1400A Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 TC = 25°C D=1 0.5 0.3 0.2 0.1 0.1 0.05 θch–c (t) = γS (t) • θch–c θch–c = 2.50°C/W, TC = 25°C PDM 0.02 0.03 e 1 0.0 t Puls ho S 1 0.01 10 μ T 100 μ 1m 10 m 100 m PW D = PW T 1 10 Pulse Width PW (s) Waveforms Switching Time Test Circuit Vin Monitor 90% Vout Monitor Vin D.U.T RL 50 Ω Vin 10 V REJ03G0940-0300 Rev.3.00 Apr 01, 2010 VDD = 30 V Vout 10% 10% 90% td (on) tr 10% 90% td (off) tf Page 5 of 6 2SK1400A Preliminary Package Dimensions Package Name TO-220AB JEITA Package Code SC-46 RENESAS Code PRSS0004AC-A Previous Code TO-220AB / TO-220ABV MASS[Typ.] 1.8g Unit: mm 2.79 ± 0.2 11.5 Max 10.16 ± 0.2 9.5 φ 3.6 1.26 ± 0.15 15.0 ± 0.3 18.5 ± 0.5 1.27 6.4 +0.2 –0.1 8.0 4.44 ± 0.2 +0.1 –0.08 7.8 ± 0.5 0.76 ± 0.1 2.54 ± 0.5 14.0 ± 0.5 2.7 Max 1.5 Max 0.5 ± 0.1 2.54 ± 0.5 Ordering Information Part No. 2SK1400A-E Quantity 600 pcs REJ03G0940-0300 Rev.3.00 Apr 01, 2010 Shipping Container Box (Tube) Page 6 of 6 Notice 1. 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