RSD201N10 RSD201N10 Datasheet Nch 100V 20A Power MOSFET lOutline VDSS 100V RDS(on) (Max.) 46mW ID 20A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit (3) 1) Low on-resistance. *1 (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple. (1) *2 *1 ESD PROTECTION DIODE *2 BODY DIODE 4) Parallel use is easy. 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche tested (2) lPackaging specifications Packaging lApplication Switching Power Supply Taping Reel size (mm) 330 Tape width (mm) 16 Type Automotive Motor Drive Basic ordering unit (pcs) Automotive Solenoid Drive Taping code 2,500 TL Marking 201N10 lAbsolute maximum ratings(Ta = 25°C) Parameter Symbol Value Unit VDSS 100 V Tc = 25°C ID *1 20 A Tc = 100°C ID *1 10 A 80 A Drain - Source voltage Continuous drain current Pulsed drain current ID,pulse *2 Gate - Source voltage VGSS 20 V Avalanche energy, single pulse EAS *3 14.6 mJ Avalanche current IAR *3 10 A Tc = 25°C PD 20 W Ta = 25°C *4 PD 0.85 W Tj 150 °C Tstg -55 to +150 °C Power dissipation Junction temperature Range of storage temperature www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/12 2012.08 - Rev.A Data Sheet RSD201N10 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - ambient RthJC - - 6.25 °C/W Thermal resistance, junction - ambient *4 RthJA - - 147 °C/W Soldering temperature, wavesoldering for 10s Tsold - - 265 °C lElectrical characteristics(Ta = 25°C) Values Parameter Drain - Source breakdown voltage Symbol V(BR)DSS Conditions VGS = 0V, ID = 1mA Unit Min. Typ. Max. 100 - - - - 1 V VDS = 100V, VGS = 0V Zero gate voltage drain current IDSS Tj = 25°C mA VDS = 100V, VGS = 0V - - 100 Tj = 125°C Gate - Source leakage current Gate threshold voltage Static drain - source on - state resistance IGSS VGS = 20V, VDS = 0V - - 10 mA VGS (th) VDS = 10V, ID = 1mA 1.0 - 2.5 V VGS = 10V, ID = 20A - 33 46 VGS = 4.0V, ID = 20A - 36 50 RDS(on) *5 mW VGS = 10V, ID = 20A - 60 84 15 30 - Tj = 125°C Forward transfer admittance www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. gfs VDS = 10V, ID = 20A 2/12 S 2012.08 - Rev.A Data Sheet RSD201N10 lElectrical characteristics(Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Input capacitance Ciss VGS = 0V - 2100 - Output capacitance Coss VDS = 25V - 180 - Reverse transfer capacitance Crss f = 1MHz - 120 - VDD ⋍ 50V, VGS = 10V - 100 - tr *5 ID = 10A - 35 - td(off) *5 RL = 12W - 150 - tf *5 RG = 10W - 100 - Turn - on delay time Rise time Turn - off delay time Fall time td(on) *5 pF ns lGate Charge characteristics(Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Total gate charge Qg *5 VDD ⋍ 50V - 55 - Gate - Source charge Qgs *5 ID = 20A - 5.5 - Gate - Drain charge Qgd VGS = 10V - 12.5 - VDD ⋍ 30V, ID = 20A - 2.7 - Gate plateau voltage *5 V(plateau) nC V lBody diode electrical characteristics (Source-Drain)(Ta = 25°C) Values Parameter Continuous source current Symbol IS *1 Pulsed source current ISM *2 Forward voltage VSD *5 Reverse recovery time trr *5 Reverse recovery charge Qrr *5 Conditions Unit Min. Typ. Max. - - 14 A - - 80 A VGS = 0V, IS = 20A - - 1.5 V IS = 20A di/dt = 100A/ms - 65 - ns - 144 - mC Tc = 25°C *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 L ⋍ 100mH, VDD = 50V, Rg = 10W, starting Tj = 25°C *4 Mounted on a epoxy PCB FR4 (20mm × 30mm × 0.8mm) *5 Pulsed www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 3/12 2012.08 - Rev.A Data Sheet RSD201N10 lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 100 PW = 100us 100 10 Drain Current : ID [A] Power Dissipation : PD/PD max. [%] 120 80 60 40 Operation in this area is limited by RDS(on) 1 PW = 10ms 0.1 20 PW = 1ms Ta=25ºC Single Pulse 0 0.01 0 25 50 75 100 125 150 175 0.1 1 10 100 1000 Drain - Source Voltage : VDS [V] Junction Temperature : Tj [°C] Normalized Transient Thermal Resistance : r(t) Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width 10 Ta=25ºC Rth(j-c)(t) = r(t)×Rth(ch-c) Rth(j-c) = 6.25ºC/W 1 0.1 0.01 0.0001 top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = Single 0.01 1 100 Pulse Width : PW [s] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 4/12 2012.08 - Rev.A Data Sheet RSD201N10 lElectrical characteristic curves Fig.5 Avalanche Energy Derating Curve vs Junction Temperature Fig.4 Avalanche Current vs Inductive Load 120 Avalanche Energy : EAS / EAS max. [%] Avalanche Current : IAS [A] 100 VDD=50V,RG=25W VGF=10V,VGR=0V Starting Tch=25ºC 10 1 0.1 0.01 0.1 1 10 100 80 60 40 20 0 0 100 Coil Inductance : L [mH] 50 75 100 125 150 175 Junction Temperature : Tj [°C] Fig.7 Typical Output Characteristics(II) Fig.6 Typical Output Characteristics(I) 20 20 VGS=10.0V Ta=25ºC Pulsed VGS=2.4V 15 VGS=10.0V VGS=2.5V VGS=4.0V VGS=3.0V 10 VGS=2.5V VGS=4.0V Drain Current : ID [A] 15 Drain Current : ID [A] 25 VGS=2.3V 5 VGS=2.2V Ta=25ºC Pulsed 10 VGS=2.3V VGS=2.2V 5 VGS=2.0V VGS=2.0V 0 0 0 0.2 0.4 0.6 0.8 0 1 4 6 8 10 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2 5/12 2012.08 - Rev.A Data Sheet RSD201N10 lElectrical characteristic curves Fig.9 Typical Transfer Characteristics 120 100 VGS = 0V ID = 1mA 115 VDS= 10V 10 110 Drain Current : ID [A] Normarize Drain - Source Breakdown Voltage : V(BR)DSS [V] Fig.8 Breakdown Voltage vs. Junction Temperature 105 100 95 90 1 Ta= 125ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 0.1 0.01 85 80 0.001 -50 0 50 100 150 0 1 Junction Temperature : Tj [°C] 4 5 Fig.11 Transconductance vs. Drain Current 3.0 100 VDS= 10V VDS = 10V ID = 1mA Transconductance : gfs [S] Gate Threshold Voltage : VGS(th) [V] 3 Gate - Source Voltage : VGS [V] Fig.10 Gate Threshold Voltage vs. Junction Temperature 2.5 2 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 Ta= -25ºC Ta=25ºC Ta=75ºC Ta=125ºC 1 0.1 0.01 0.01 100 125 150 Junction Temperature : Tj [°C] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 10 0.1 1 10 100 Drain Current : ID [A] 6/12 2012.08 - Rev.A Data Sheet RSD201N10 lElectrical characteristic curves Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage Fig.13 Static Drain - Source On - State Resistance vs. Drain Current(I) 100 Ta=25ºC 75 ID = 10A ID = 20A 50 25 0 0 5 10 15 Static Drain - Source On-State Resistance : RDS(on) [mW] Static Drain - Source On-State Resistance : RDS(on) [mW] 100 Gate - Source Voltage : VGS [V] Ta=25ºC VGS= 10V VGS= 4.5V VGS= 4.0V 10 0.01 0.1 1 10 100 Drain Current : ID [A] Fig.14 Static Drain - Source On - State Resistance vs. Junction Temperature Static Drain - Source On-State Resistance : RDS(on) [mW] 100 VGS = 10V ID = 5A 75 50 25 0 -50 0 50 100 150 Junction Temperature : Tj [ºC] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 7/12 2012.08 - Rev.A Data Sheet RSD201N10 lElectrical characteristic curves Fig.16 Static Drain-Source On-State Resistance vs. Drain Current(III) Fig.15 Static Drain - Source On - State Resistance vs. Drain Current(II) 1000 VGS= 10V Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 100 10 0.01 0.1 1 10 100 Static Drain - Source On-State Resistance : RDS(on) [mW] Static Drain - Source On-State Resistance : RDS(on) [mW] 1000 VGS= 4.5V Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 100 10 0.01 0.1 10 100 Drain Current : ID [A] Drain Current : ID [A] Fig.17 Static Drain - Source On - State Resistance vs. Drain Current(IV) Fig.18 Drain Current Derating Curve 1000 120 VGS= 4.0V 100 Drain Current Dissipation : ID/ID max. (%) Static Drain - Source On-State Resistance : RDS(on) [mW] 1 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 100 80 60 40 20 0 10 0.01 0.1 1 10 0 100 Drain Current : ID [A] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 25 50 75 100 125 150 175 Junction Temperature : Tj [ºC] 8/12 2012.08 - Rev.A Data Sheet RSD201N10 lElectrical characteristic curves Fig.19 Typical Capacitance vs. Drain - Source Voltage Fig.20 Switching Characteristics 100000 10000 Ta = 25ºC f = 1MHz VGS = 0V 1000 Switching Time : t [ns] Capacitance : C [pF] 10000 Ciss 1000 Coss 100 Crss tf td(off) 100 td(on) 10 10 tr 1 0.01 0.1 1 10 100 0.01 0.1 Drain - Source Voltage : VDS [V] 1 10 100 Drain Current : ID [A] Fig.21 Dynamic Input Characteristics Fig.22 Source Current vs. Source - Drain Voltage 100 10 VGS=0V Ta=25ºC VDD= 50V ID= 20A RG=10W 10 Source Current : IS [A] Gate - Source Voltage : VGS [V] Ta=25ºC VDD= 50V VGS= 10V RG=10W 5 0 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 1 0.1 0.01 0 5 10 15 20 25 30 35 40 45 50 55 60 0.0 1.0 1.5 Source-Drain Voltage : VSD [V] Total Gate Charge : Qg [nC] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 0.5 9/12 2012.08 - Rev.A Data Sheet RSD201N10 lElectrical characteristic curves Fig23 Reverse Recovery Time vs.Source Current Reverse Recovery Time : trr [ns] 1000 100 Ta=25ºC di / dt = 100A / ms VGS = 0V 10 0.1 1 10 100 Source Current : IS [A] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 10/12 2012.08 - Rev.A Data Sheet RSD201N10 lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 11/12 2012.08 - Rev.A Data Sheet RSD201N10 lDimensions (Unit : mm) A2 D B A b1 c1 H E L3 L2 CPT3 L4 A1 b2 Lp L1 L b3 c e b x B A A3 l3 l1 e b6 b5 l2 DIM A1 A2 A3 b b1 b2 b3 c c1 D E e HE L L1 L2 L3 L4 Lp x DIM b5 b6 ｌ1 ｌ2 ｌ3 MILIMETERS MIN MAX 0.00 0.15 2.20 2.50 0.25 0.55 0.75 5.00 5.30 5.00 0.75 0.40 0.60 0.40 0.60 6.30 6.70 5.40 5.80 2.30 9.00 10.00 2.20 2.80 0.80 1.40 1.20 1.80 5.30 0.90 1.00 1.60 0.25 MILIMETERS MIN MAX 1.00 5.20 2.50 5.50 10.00 INCHES MIN 0 0.087 MAX 0.006 0.098 0.01 0.022 0.197 0.03 0.209 0.20 0.03 0.016 0.016 0.248 0.213 0.024 0.024 0.264 0.228 0.09 0.354 0.087 0.031 0.047 0.394 0.11 0.055 0.071 0.209 0.035 0.039 - 0.063 0.01 INCHES MIN - MAX 0.04 0.205 0.098 0.217 0.394 Dimension in mm/inches www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 12/12 2012.08 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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