DG646BH25 - Dynex Semiconductor Ltd.

DG646BH25
Gate Turn-off Thyristor
DS4092-5 July 2014 (LN31756)
FEATURES
KEY PARAMETERS

Double Side Cooling

High Reliability In Service

High Voltage Capability

Fault Protection Without Fuses

High Surge Current Capability

Turn-off Capability Allows Reduction in
VDRM
IT(AV)
ITCM
dVD/dt
dIT/dt
2500V
867A
2500A
1000V/µs
300A/µs
Equipment Size and Weight. Low Noise
Emission Reduces Acoustic Cladding Necessary
For Environmental Requirements
APPLICATIONS

Variable speed AC motor drive inverters (VSDAC)

Uninterruptable Power Supplies





High Voltage Converters
Choppers
Welding
Induction Heating
DC/DC Converters
Outline type code: H
(See Package Details for further information)
Fig. 1 Package outline
VOLTAGE RATINGS
Type Number
Repetitive Peak Off-state
Voltage VDRM (V)
Repetitive Peak Reverse
Voltage VRRM (V)
DG646BH25
2500
16
Conditions
Tvj = 125°C, IDM =50mA,
IRRM = 50mA
CURRENT RATINGS
Symbol
Parameter
ITCM
Repetitive peak controllable on-state current
IT(AV)
Mean on-state current
IT(RMS)
RMS on-state current
Conditions
VD = VDRM, Tj = 125°C,
dIGQ/dt = 40A/s, CS = 6.0 F
THS = 80°C, Double side cooled.
Half sine 50Hz
THS = 80°C, Double side cooled.
Half sine 50Hz
Max.
Units
2500
A
867
A
1360
A
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DG646BH25
SEMICONDUCTOR
SURGE RATINGS
Symbol
ITSM
2
It
Parameter
Test Conditions
Max.
Units
Surge (non repetitive) on-state current
10ms half sine. Tj = 125°C
18.0
kA
10ms half sine. Tj = 125°C
16.2
MA s
VD = 1500V, IT = 2000A, Tj = 125°C, IFG > 30A,
Rise time > 1.0 s
300
A/s
To 66% VDRM; RGK  1.5, Tj = 125°C
135
V/s
To 66% VDRM; VRG  -2V, Tj = 125°C
1000
V/s
IT = 2000A, VDM = 2500V, Tj = 125°C, diGQ/dt = 40A/s,
CS = 2.0F
200
nH
2
I t for fusing
diT/dt
Critical rate of rise of on-state current
dVD/dt
Rate of rise of off-state voltage
LS
Peak stray inductance in snubber
circuit
2
GATE RATINGS
Symbol
Parameter
Test Conditions
Min.
Max.
Units
This value may be exceeded during turn-off
-
16
V
20
100
A
Average forward gate power
-
15
W
Peak reverse gate power
-
19
kW
VRGM
Peak reverse gate voltage
IFGM
Peak forward gate current
PFG(AV)
PRGM
diGQ/dt
Rate of rise of reverse gate current
30
60
A/s
tON(min)
Minimum permissible on time
50
-
s
tOFF(min)
Minimum permissible off time
100
-
s
THERMAL AND MECHANICAL RATINGS
Symbol
Rth(j-hs)
Parameter
Thermal resistance – junction to
heatsink surface
Test Conditions
Double side cooled
Min.
Max.
Units
DC
-
0.018
°C/W
Anode DC
-
0.03
°C/W
Cathode DC
-
0.045
°C/W
Per contact
-
0.006
°C/W
-
125
°C
Single side cooled
Rth(c-hs)
Contact thermal resistance
Clamping force 20.0kN
With mounting compound
Tvj
Virtual junction temperature
On-state (conducting)
TOP/Tstg
Operating junction/storage
temperature range
-40
125
°C
Clamping force
18.0
22.0
kN
Fm
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DG646BH25
SEMICONDUCTOR
CHARACTERISTICS
Tj = 125°C unless stated otherwise
Symbol
Parameter
Test Conditions
Min
.
Max.
Units
VTM
On-state voltage
At 2000A peak, IG(ON) = 7A dc
-
2.6
V
IDM
Peak off-state current
VDRM = 2500V, VRG = 0V
-
100
mA
IRRM
Peak reverse current
At VRRM
-
50
mA
VGT
Gate trigger voltage
VD = 24V, IT = 100A, Tj = 25°C
-
1.0
V
IGT
Gate trigger current
VD = 24V, IT = 100A, Tj = 25°C
-
3.0
A
IRGM
Reverse gate cathode current
VRGM = 16V, No gate/cathode resistor
-
50
mA
EON
Turn-on energy
-
1188
mJ
-
1.2
s
VD = 1500V
IT = 2000A, dIT/dt = 300A/s
IFG = 30A, rise time < 1.0s
td
Delay time
tr
Rise time
-
3.0
s
Turn-off energy
-
4000
mJ
-
17.0
s
-
2.0
s
-
19.0
s
-
6600
C
EOFF
tgs
Storage time
IT = 2000A,
tgf
Fall time
VDM = 2500V,
tgq
Gate controlled turn-off time
Snubber capacitor CS = 2.0F,
QGQ
Turn-off gate charge
diGQ/dt = 40A/s
QGQT
Total turn-off gate charge
-
13200
C
IGQM
Peak reverse gate current
-
650
A
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DG646BH25
SEMICONDUCTOR
Fig.2 Maximum gate trigger voltage/current vs junction
temperature
Fig.3 On-state characteristics
Maximum permissible turn-off current ITCM - (A)
3000
2500
2000
1500
Conditions:
125oC
VDM = VDRM
dIGQ/dt = 40A/us
1000
500
0
0
1
2
3
4
5
6
Snubber Capacitance Cs - (uF)
Fig.4 Maximum dependence of ITCM on CS
Fig.5 Steady state sinusoidal wave conduction loss –
double side cooled
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DG646BH25
SEMICONDUCTOR
Fig.6 Surge (non-repetitive) on-state current vs time
Fig.7 Steady state rectangular wave conduction loss –
double side cooled
Fig.8 Maximum (limit) transient thermal impedance – junction to case (°C/kW)
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SEMICONDUCTOR
Fig.9 Turn-on energy vs on-state current
Fig.10 Turn-on energy vs peak forward gate current
Fig.11 Turn-on energy vs on-state current
Fig.12 Turn-on energy vs peak forward gate current
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DG646BH25
SEMICONDUCTOR
Fig.13 Turn-on energy vs rate of rise of on-state current
Fig.14 Delay time & rise time vs turn-on current
Fig.15 Delay time & rise time vs peak forward gate
current
Fig.16 Turn-off energy vs on-state current
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SEMICONDUCTOR
Fig.17 Turn-off energy vs rate of rise of reverse gate
current
Fig.18 Turn-off energy vs on-state current
Fig.19 Turn-off energy vs rate of rise of reverse gate
current
Fig.20 Turn-off energy vs on-state current
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SEMICONDUCTOR
Fig.21 Gate storage time vs on-state current
Fig.22 Gate storage time vs rate of rise of reverse gate
current
Fig.23 Gate fall time vs on-state current
Fig.24 Gate fall time vs rate of rise of reverse gate
current
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DG646BH25
SEMICONDUCTOR
Fig.25 Peak reverse gate current vs turn-off current
Fig.26 Peak reverse gate current vs rate of rise of
reverse gate current
Fig.27 Turn-off gate charge vs on-state current
Fig.28 Turn-off gate charge vs rate of rise of reverse gate
current
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DG646BH25
SEMICONDUCTOR
Fig.29 Rate of rise of off-state voltage vs gate cathode resistance
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DG646BH25
SEMICONDUCTOR
Fig.30 General switching waveforms
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DG646BH25
SEMICONDUCTOR
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Nominal weight: 820g
Clamping force: 20kN ±10%
Lead coaxial, length: 600mm
Package outline type code: H
Fig.31 Package outline
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DG646BH25
SEMICONDUCTOR
IMPORTANT INFORMATION:
This publication is provided for information only and not for resale.
The products and information in this publication are intended for use by appropriately trained technical personnel.
Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute
any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of
the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements
are met. Should additional product information be needed please contact Customer Service.
Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical
errors. The information is provided without any warranty or guarantee of any kind.
This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the
most up to date version and has not been superseded.
The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property.
The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or
malfunction.
The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use
protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any
electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves.
Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the
product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include
potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design
and safety precautions should always be followed to protect persons and property.
Product Status & Product Ordering:
We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for
production. The annotations are as follows:Target Information:
Preliminary Information:
No Annotation:
This is the most tentative form of information and represents a very preliminary specification.
No actual design work on the product has been started.
The product design is complete and final characterisation for volume production is in
progress.The datasheet represents the product as it is now understood but details may change.
The product has been approved for production and unless otherwise notified by Dynex any
product ordered will be supplied to the current version of the data sheet prevailing at the
time of our order acknowledgement.
All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request.
Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their
respective owners.
HEADQUARTERS OPERATIONS
CUSTOMER SERVICE
DYNEX SEMICONDUCTOR LIMITED
Doddington Road, Lincoln, Lincolnshire, LN6 3LF
United Kingdom.
Phone: +44 (0) 1522 500500
Fax:
+44 (0) 1522 500550
Web: http://www.dynexsemi.com
Phone: +44 (0) 1522 502753 / 502901
Fax:
+44 (0) 1522 500020
e-mail: power_solutions@dynexsemi.com
 Dynex Semiconductor Ltd.
Technical Documentation – Not for resale.
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