DG406BP - Dynex Semiconductor Ltd.

DG406BP25
DG406BP25
Gate Turn-off Thyristor
DS4090-5 July 2014 (LN31730)
APPLICATIONS
KEY PARAMETERS
1200A
ITCM
VDRM
2500V
500A
IT(AV)
dVD/dt
1000V/µs
300A/µs
diT/dt
■ Variable speed A.C. motor drive inverters (VSD-AC).
■ Uninterruptable Power Supplies
■ High Voltage Converters.
■ Choppers.
■ Welding.
■ Induction Heating.
■ DC/DC Converters.
FEATURES
■ Double Side Cooling.
■ High Reliability In Service.
■ High Voltage Capability.
■ Fault Protection Without Fuses.
■ High Surge Current Capability.
■ Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces Acoustic
Cladding Necessary For Environmental Requirements.
Outline type code: P.
See Package Details for further information.
VOLTAGE RATINGS
Type Number
DG406BP25
Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage
VDRM
VRRM
V
V
2500
16
Conditions
Tvj = 125oC, IDM = 50mA,
IRRM = 50mA
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
Units
1200
A
ITCM
Repetitive peak controllable on-state current VD = VDRM, Tj = 125oC, diGQ/dt = 30A/µs, Cs = 1.5µF
IT(AV)
Mean on-state current
THS = 80oC. Double side cooled. Half sine 50Hz.
500
A
IT(RMS)
RMS on-state current
THS = 80oC. Double side cooled. Half sine 50Hz.
630
A
1/19
DG406BP25
SURGE RATINGS
Symbol
Parameter
Conditions
Max.
Units
ITSM
Surge (non-repetitive) on-state current
10ms half sine. Tj = 125oC
8.0
kA
I2t
I2t for fusing
10ms half sine. Tj =125oC
0.32 x 106
A2s
Critical rate of rise of on-state current
VD = 2000V, IT = 1000A, Tj = 125oC, IFG ≥ 30A,
Rise time > 1.0µs
300
A/µs
To 66% VDRM; RGK ≤ 1.5Ω, Tj = 125oC
500
V/µs
To 66% VDRM; VRG = -2V, Tj = 125oC
1000
V/µs
IT = 1000A, VD = VDRM, Tj = 125oC,
diGQ/dt = 30A/µs, Cs = 1.0µF
200
nH
diT/dt
dVD/dt
LS
Rate of rise of off-state voltage
Peak stray inductance in snubber circuit
GATE RATINGS
Symbol
Parameter
VRGM
Peak reverse gate voltage
IFGM
Peak forward gate current
Conditions
This value maybe exceeded during turn-off
Min.
Max.
Units
-
16
V
20
70
A
PFG(AV)
Average forward gate power
-
10
W
PRGM
Peak reverse gate power
-
15
kW
diGQ/dt
Rate of rise of reverse gate current
15
60
A/µs
tON(min)
Minimum permissable on time
20
-
µs
tOFF(min)
Minimum permissable off time
100
-
µs
Min.
Max.
Units
Double side cooled
-
0.041
o
Anode side cooled
-
0.07
o
Cathode side cooled
-
0.1
o
-
0.009
o
-
125
o
Operating junction/storage temperature range
-40
125
o
Clamping force
11.0
15.0
THERMAL RATINGS AND MECHANICAL DATA
Symbol
Rth(j-hs)
Parameter
DC thermal resistance - junction to heatsink
surface
Rth(c-hs)
Contact thermal resistance
Tvj
Virtual junction temperature
TOP/Tstg
-
2/19
Conditions
Clamping force 12.0kN
With mounting compound
per contact
C/W
C/W
C/W
C/W
C
C
kN
DG406BP25
CHARACTERISTICS
Tj = 125oC unless stated otherwise
Symbol
Conditions
Parameter
Min.
Max.
Units
VTM
On-state voltage
At 1000A peak, IG(ON) = 4A d.c.
-
2.5
V
IDM
Peak off-state current
VDRM = 2500V, VRG = 0V
-
50
mA
IRRM
Peak reverse current
At VRRM
-
50
mA
VGT
Gate trigger voltage
VD = 24V, IT = 100A, Tj = 25oC
-
1.0
V
IGT
Gate trigger current
VD = 24V, IT = 100A, Tj = 25oC
-
1.5
A
IRGM
Reverse gate cathode current
VRGM = 16V, No gate/cathode resistor
-
50
mA
EON
Turn-on energy
VD = 2000V
-
1040
mJ
td
Delay time
IT = 1000A, dIT/dt = 300A/µs
-
1.5
µs
tr
Rise time
IFG = 30A, rise time ≤ 1.0µs
-
3.0
µs
Turn-off energy
-
2300
mJ
tgs
Storage time
-
14.0
µs
tgf
Fall time
IT = 1000A, VDM = 2500V
-
1.5
µs
tgq
Gate controlled turn-off time
Snubber Cap Cs = 1.0µF,
-
15.5
µs
QGQ
Turn-off gate charge
diGQ/dt = 30A/µs
-
3000
µC
QGQT
Total turn-off gate charge
-
6000
µC
IGQM
Peak reverse gate current
-
420
A
EOFF
3/19
DG406BP25
2.0
4.0
1.5
3.0
1.0
2.0
VGT
0.5
1.0
Gate trigger current IGT - (A)
Gate trigger voltage VGT - (V)
CURVES
IGT
0
-50
-25
0
25
50
75 100
Junction temperature Tj - (˚C)
125
0
150
Instantaneous on-state current ITM - (kA)
4.0
Measured under pulse conditions.
IG(ON) = 4.0A
Half sine wave 10ms
3.0
1.5
Tj = 25˚C
Tj = 125˚C
1.0
2.0
0.5
1.0
0
1.0
2.0
3.0
4.0
Instantaneous on-state voltage VTM - (V)
Fig.2 On-state characteristics
4/19
Maximum permissible turn-off current ITCM - (kA)
Fig.1 Maximum gate trigger voltage/current vs junction temperature
5.0
Conditions:
Tj = 125˚C, VDM = VDRM,
dIGQ/dt = 30A/µs
0
0.25 0.50 0.75 1.00 1.25 1.5 1.75
Snubber capacitance CS - (µF)
Fig.3 Maximum dependence of ITCM on CS
2.0
DG406BP25
0.05
dc
0.03
0.02
0.01
0
0.001
0.01
0.1
Time - (s)
100
10
1.0
Fig.4 Maximum (limit) transient thermal impedance - double side cooled
Peak half sine wave on-state current - (kA)
Thermal impedance - ˚C/W
0.04
20
15
10
5
0
0.0001
0.001
0.01
Pulse duration - (s)
0.1
1.0
Fig.5 Surge (non-repetitive) on-state current vs time
5/19
Mean on-state power dissipation - (W)
DG406BP25
1500
Conditions:
IG(ON) = 4.0A
dc
180˚
1000
120˚
60˚
30˚
500
0
0
200
400
600
Mean on-state current IT(AV) - (A)
70
80
90 100 120
Maximum permissible case
temperature - (˚C)
130
Mean on-state power dissipation - (W)
Fig.6 Steady state rectangluar wave conduction loss - double side cooled
1500
Conditions:
IG(ON) = 4.0A
1000
180˚
120˚
90˚
60˚
30˚
500
0
0
100 200 300 400 500 600
Mean on-state current IT(AV) - (A)
70
80
90 100 120 130
Maximum permissible case
temperature - (˚C)
Fig.7 Steady state sinusoidal wave conduction loss - double side cooled
6/19
DG406BP25
Conditions:
Tj = 25˚C, IFGM = 30A,
CS = 1.0µF,
dI/dt = 300A/µs,
750 dIFG/dt = 30A/µs
VD = 2000V
VD = 1500V
500
VD = 1000V
250
0
0
250
500
750
1000
On-state current IT - (A)
1250
1500
Fig.8 Turn-on energy vs on-state current
2000
Turn-on energy loss EON - (mJ)
Turn-on energy loss EON - (mJ)
1000
Conditions:
Tj = 25˚C, IT = 1000A,
CS = 1.0µF, RS = 10 Ohms
dI/dt = 300A/µs,
dIFG/dt = 30A/µs
1500
1000
VD = 2000V
VD = 1500V
500
0
VD = 1000V
0
20
40
60
80
Peak forward gate current IFGM - (A)
FIG 9 TURN ON ENERGY
PEAK FORWARD
Fig.9 Turn-on energy vs peak forward gate current
7/19
DG406BP25
Turn-on energy loss EON - (mJ)
1125
Conditions:
1000 Tj = 125˚C, IFGM = 30A,
CS = 1.0µF,
RS = 10 Ohms,
875 dI /dt = 300A/µs,
T
dIF/dt = 30A/µs
750
VD = 2000V
VD = 1500V
625
VD = 1000V
500
375
250
125
0
0
250
500
750
1000
On-state current IT - (A)
1250
2500
Fig.10 Turn-on energy vs on-state current
1250
Conditions:
Tj = 125˚C, IT = 1000A,
CS = 1.0µF, RS = 10 Ohms
dI/dt = 300A/µs,
dIFG/dt = 30A/µs
1500
VD = 2000V
1000
VD = 1500V
VD = 1000V
500
0
0
20
40
60
Peak forward gate current IFGM - (A)
Fig.11 Turn-on energy vs peak forward gate current
8/19
Turn-on energy loss EON - (mJ)
Turn-on energy loss EON - (mJ)
2000
Conditions:
IT = 1000A,
Tj = 125˚C,
CS = 1.0µF
1000 RS = 10 Ohms
IFGM = 30A,
dIFG/dt = 30A/µs
750
VD = 2000V
500
VD = 1500V
250
VD = 1000V
80
0
0
100
200
300
Rate of rise of on-state current dIT/dt - (A/µs)
FIG 12 TURN ON ENERGY
RATE OF
Fig.12 Turn-on energy vs rate of rise of on-state current
DG406BP25
Conditions: Tj = 125˚C, IFGM = 30A,
CS = 1.0µF, VD = 2000V,
RS = 10 Ohms, dIT/dt = 300A/µs
tr
3.0
2.0
td
1.0
0
0
250
500
750
1000
On-state current IT - (A)
1250
1500
Fig.13 Delay time & rise time vs turn-on current
5.0
Turn-on delay time and rise time - (µs)
Turn-on delay and rise time - (µs)
4.0
Conditions:
Tj = 125˚C, IT = 1000A,
CS = 1.0µF,
RS = 10 Ohms,
dI/dt = 300A/µs,
dIFG/dt = 30A/µs,
VD = 2000V
4.0
3.0
tr
2.0
td
1.0
0
0
20
40
60
80
Peak forward gate current IFGM - (A)
FIG
14
DELAY
TIME & RISE TIME
PEAK FORWARD
Fig.14 Delay time & rise time vs peak forward gate current
9/19
DG406BP25
Turn-off energy loss EOFF - (mJ)
2000
Conditions:
Tj = 25˚C,
CS = 1.0µF,
dIGQ/dt = 30A/µs
1500
VDRM
0.75x VDRM
1000
0.5x VDRM
500
0
0
250
500
750
1000
On-state current IT - (A)
1250
1500
Turn-off energy per pulse EOFF - (mJ)
Fig.15 Turn-off energy vs on-state current
2000
Conditions:
Tj = 25˚C,
CS = 1.0µF,
IT = 1000A
VDRM
1500
0.75x VDRM
1000
0.5x VDRM
500
0
10
20
30
40
50
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
FIG 16 TURN OFF ENERGY
RATE OF RISE OF
Fig.16 Turn-off energy vs rate of rise of reverse gate current
10/19
60
DG406BP25
2500
Conditions:
Tj = 125˚C,
CS = 1.0µF,
dIGQ/dt = 30A/µs
VDRM
1500
0.75x VDRM
1000
0.5x VDRM
500
0
0
250
500
750
1000
1250
On-state current IT - (A)
FIG 17 TURN OFF ENERGY
ON STATE CURRENT
1500
Fig.17 Turn-off energy vs on-state current
2500
Turn-off energy per pulse EOFF - (mJ)
Turn-off energy loss EOFF - (mJ)
2000
Conditions:
2000 Tj = 125˚C,
CS = 1.0µF,
IT = 1000A
VDRM
0.75x VDRM
1500
0.5x VDRM
1000
500
10
20
30
40
50
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
FIG 18 TURN OFF ENERGY LOSS
RATE OF RISE OF
Fig.18 Turn-off energy loss vs rate of rise of reverse gate current
11/19
DG406BP25
2500
Turn-off energy per pulse EOFF - (mJ)
Conditions:
Tj = 125˚C,
VDM = VDRM,
dIGQ/dt = 30A/µs
CS = 1.0µF
CS = 1.5µF
2000
CS = 2.0µF
1500
CS = 0.5µF
1000
500
0
0
250
500
750
1000
1250
On-state current IT - (A)
FIG 19 TURN OFF ENERGY
ON STATE CURRENT
1500
Fig.19 Turn-off energy vs on-state current
2.0
Conditions:
CS = 1.0µF,
dIGQ/dt = 30A/µs
Tj = 125˚C
Gate fall tgf - (µs)
1.5
Tj = 25˚C
1.0
0.5
0
0
250
500
750
1000
On-state current IT - (A)
Fig.20 Gate fall time vs on-state current
12/19
1250
1500
DG406BP25
Gate storage time tgs - (µs)
25
Conditions:
CS = 1.0µF,
IT = 1000A
20
15
Tj = 125˚C
10
Tj = 25˚C
5
10
20
30
40
50
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
FIG 21 GATE STORAGE TIME
RATE OF RISE OF
60
Fig.21 Gate storage time vs rate of rise of reverse gate current
Gate storage fall tgf - (µs)
2.0
Conditions:
CS = 1.0µF,
dIGQ/dt = 30A/µs
Tj = 125˚C
1.5
Tj = 25˚C
1.0
0.5
0
0
250
500
750
1000
1250
On-state current IT - (A)
FIG 22 GATE FALL TIME
ON STATE CURRENT
1500
Fig.22 Gate fall time vs on-state current
13/19
DG406BP25
2.00
Conditions:
CS = 1.0µF,
IT = 1000A
Gate fall time tgf - (µs)
1.75
1.50
Tj = 125˚C
1.25
Tj = 25˚C
1.00
10
20
30
40
50
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
FIG 23 GATE FALL TIME
RATE OF RISE OF
60
Fig.23 Gate fall time vs rate of rise of reverse gate current
Peak reverse gate current IGQM - (A)
500
Conditions:
CS = 1.0µF,
dIGQ/dt = 30A/µs
Tj = 125˚C
400
Tj = 25˚C
300
200
100
0
250
500
750
1000
Turn-off current IT - (A)
1250
Fig.24 Peak reverse gate current vs turn-off current
14/19
1500
DG406BP25
500
Conditions:
CS = 1.0µF,
IT = 1000A
Tj = 125˚C
Peak reverse gate current IGQM - (A)
450
Tj = 25˚C
400
350
300
250
10
20
30
40
50
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
60
Fig.25 Peak reverse gate current vs rate of rise of reversegate current
Total turn-off charge QGQ - (µC)
4000
Conditions:
CS = 1.0µF,
dIGQ/dt = 30A/µs
Tj = 125˚C
3000
Tj = 25˚C
2000
1000
0
0
250
500
750
1000
On-state current IT - (A)
1250
1500
Fig.26 Turn-off gate charge vs on-state current
15/19
DG406BP25
4000
Conditions:
CS = 1.0µF,
IT = 1000A
Turn-off gate charge QGQ - (µC)
3500
3000
Tj = 125˚C
2500
2000
Tj = 25˚C
1500
10
20
30
40
50
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
60
Rate of rise of off-state voltage dV/dt
- (V/µs)
Fig.27 Turn-off gate charge vs rate of rise of reverse gate current
1000
VD = 1250V
500
0
0.1
Tj = 125˚C
VD = 1650V
1.0
10
100
Gate cathode resistance RGK - (Ohms)
1000
Fig.28 Rate of rise of off-state voltage vs gate cathode resistance
16/19
Anode voltage and current
DG406BP25
0.9VD
0.9IT
dVD/dt
VD
VD
IT
0.1VD
td
VDM
ITAIL
VDP
tgs
tr
tgf
tgt
Gate voltage and current
dIFG/dt
0.1IFG
tgq
IFG
VFG
IG(ON)
0.1IGQ
tw1
VRG
QGQ
0.5IGQM
IGQM
V(RG)BR
Recommended gate conditions:
ITCM = 1000A
IFG = 30A
IG(ON) = 4A d.c.
tw1(min) = 10µs
IGQM = 420A
diGQ/dt = 30A/µs
QGQ = 3000µC
VRG(min) = 2V
VRG(max) = 16V
These are recommended Dynex Semiconductor conditions. Other conditions are permitted
according to users gate drive specifications.
Fig.29 General switching waveforms
17/19
DG406BP25
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.6 ± 0.1 x 1.95 ± 0.05 deep
Auxiliary cathode
20˚
Gate
Cathode
18 nom
27.0
25.5
Ø51 nom
Ø38 nom
Ø38 nom
Ø56 max
Ø57.5 max
Ø63.5 max
Nominal weight: 350g
Clamping force: 12kN ±10%
Lead coaxial,length: 600mm
Package outine type code: P
18/19
Anode
IMPORTANT INFORMATION:
This publication is provided for information only and not for resale.
The products and information in this publication are intended for use by appropriately trained technical personnel.
Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute
any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of
the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements
are met. Should additional product information be needed please contact Customer Service.
Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical
errors. The information is provided without any warranty or guarantee of any kind.
This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the
most up to date version and has not been superseded.
The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property.
The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or
malfunction.
The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use
protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any
electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves.
Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the
product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include
potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design
and safety precautions should always be followed to protect persons and property.
Product Status & Product Ordering:
We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for
production. The annotations are as follows:Target Information:
Preliminary Information:
No Annotation:
This is the most tentative form of information and represents a very preliminary specification.
No actual design work on the product has been started.
The product design is complete and final characterisation for volume production is in
progress.The datasheet represents the product as it is now understood but details may change.
The product has been approved for production and unless otherwise notified by Dynex any
product ordered will be supplied to the current version of the data sheet prevailing at the
time of our order acknowledgement.
All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request.
Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their
respective owners.
HEADQUARTERS OPERATIONS
CUSTOMER SERVICE
DYNEX SEMICONDUCTOR LIMITED
Doddington Road, Lincoln, Lincolnshire, LN6 3LF
United Kingdom.
Phone: +44 (0) 1522 500500
Fax:
+44 (0) 1522 500550
Web: http://www.dynexsemi.com
Phone: +44 (0) 1522 502753 / 502901
Fax:
+44 (0) 1522 500020
e-mail: power_solutions@dynexsemi.com
 Dynex Semiconductor Ltd.
Technical Documentation – Not for resale.