DSF11060SG DSF11060SG Fast Recovery DioGH DS4548 - JXO\ 20/1 31791) KEY PARAMETERS VRRM 6000V IF(AV) 400A IFSM 4200A Qr 700µC trr 6.0µs APPLICATIONS ■ Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling ■ High Surge Capability ■ Low Recovery Charge VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V DSF11060SG60 DSF11060SG58 DSF11060SG56 DSF11060SG55 6000 5800 5600 5500 Conditions VRSM = VRRM + 100V Lower voltage grades available. Outline type code: M779b. See Package Details for further information. CURRENT RATINGS Symbol Parameter Conditions Max. Units Double Side Cooled IF(AV) Mean forward current Half wave resistive load, Tcase = 65oC 400 A IF(RMS) RMS value Tcase = 65oC 631 A Continuous (direct) forward current Tcase = 65oC 585 A IF Single Side Cooled (Anode side) IF(AV) Mean forward current Half wave resistive load, Tcase = 65oC 265 A IF(RMS) RMS value Tcase = 65oC 420 A Continuous (direct) forward current Tcase = 65oC 365 A IF 1/6 DSF11060SG SURGE RATINGS Symbol IFSM I2t IFSM I2t Conditions Parameter Max. Units 4.2 kA 88 x 103 A2s 3.4 kA 57.8 x 103 A2s Surge (non-repetitive) forward current 10ms half sine; with 0% VRRM, Tj = 150oC I2t for fusing Surge (non-repetitive) forward current 10ms half sine; with 50% VRRM, Tj = 150oC I2t for fusing THERMAL AND MECHANICAL DATA Symbol Conditions Parameter Double side cooled Rth(j-c) Thermal resistance - junction to case Min. Max. Units dc - 0.032 o Anode dc - 0.064 o Cathode dc - 0.064 o Double side - 0.008 o Single side - 0.016 o - 135 o C/W C/W Single side cooled Rth(c-h) Thermal resistance - case to heatsink Clamping force 12kN with mounting compound C/W C/W C/W Tvj Virtual junction temperature Tstg Storage temperature range -55 125 o Clamping force 10.8 13.2 kN Typ. Max. Units - Forward (conducting) C C CHARACTERISTICS Symbol Conditions VFM Forward voltage At 600A peak, Tcase = 25oC - 3.8 V IRRM Peak reverse current At VRRM, Tcase = 125oC - 70 mA 6.0 - µs - 1000 µC 350 - A 1.7 - - trr QRA1 Reverse recovery time Recovered charge (50% chord) IF = 1000A, diRR/dt = 100A/µs IRM Reverse recovery current Tcase = 125oC, VR = 100V K Soft factor VTO Threshold voltage At Tvj = 125oC - 1.5 V rT Slope resistance At Tvj = 125oC - 2.9 mΩ Forward recovery voltage di/dt = 1000A/µs, Tj = 100oC - 400 V VFRM 2/6 Parameter DSF11060SG DEFINITION OF K FACTOR AND QRA1 QRA1 = 0.5x IRR(t1 + t2) dIR/dt t1 k = t1/t2 t2 τ 0.5x IRR IRR CURVES 100000 QS = ∫ IF 50µs Conditions: 0 Tj = 125˚C, VR = 100V Reverse recovered charge QS - (µC) QS tp = 1ms dIR/dt 10000 IRR A B C 1000 D E A: IF = 2000A B: IF = 1000A C: IF = 500A D: IF = 200A 100 E: IF = 100A 1 10 100 Rate of rise of reverse current dIR/dt - (A/µs) 1000 Fig. 1 Recovered charge 3/6 DSF11060SG 10000 Conditions: Tj = 125˚C, Reverse recovery current IRR - (A) VR = 100V 1000 A B C D E 100 A: IF = 2000A B: IF = 1000A C: IF = 500A D: IF = 200A 10 E: IF = 100A 1 10 100 Rate of rise of reverse current dIR/dt - (A/µs) 1000 Fig. 5 typical reverse recovery current vs rate of rise of reverse current 0.100 Thermal impedance - (˚C/W) d.c. Double side cooled 0.010 0.001 0.01 0.1 1 Time - (s) 10 Fig. 3 Maximum (limit) transient thermal impedance - junction to case - (˚CW) 4/6 100 DSF11060SG PACKAGE DETAILS (Alternative outline G includes gate connections, all other details are the same as M779b). For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6x2.0 deep (in both electrodes) Cathode Ø58.5 max 27.0 25.4 Ø34 nom Ø34 nom Anode Nominal weight: 310g Clamping force: 12kN ±10% Package outine type code: M779b ASSOCIATED PUBLICATIONS Title Application Note Number Calculating the junction temperature or power semiconductors AN4506 Recommendations for clamping power semiconductors AN4839 Thyristor and diode measurement with a multi-meter AN4853 Use of VTO, rT on-state characteristic AN5001 5/6 IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact Customer Service. Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. The information is provided without any warranty or guarantee of any kind. This publication is an uncontrolled document and is subject to change without notice. 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