DG858DW45 DG858DW45 Gate Turn-Off Thyristor DS4334-5 July 2014 (LN31737) FEATURES KEY PARAMETERS ITCM 3000A VDRM 4500V IT(AV) 1100A dVD/dt 750V/µs dIT/dt 300A/µs ● Double Side Cooling ● High Reliability In Service ● High Voltage Capability ● Fault Protection Without Fuses ● High Surge Current Capability ● Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements APPLICATIONS ● Variable speed A.C. motor drive inverters (VSD-AC). ● Uninterruptable Power Supplies ● High Voltage Converters. ● Choppers. ● Welding. ● Induction Heating. ● DC/DC Converters. Package outline type code : W See Package Details for further information. Fig.1 Package outline VOLTAGE RATINGS Type Number Repetitive Peak Off-state Voltage VDRM V Repetitive Peak Reverse Voltage VRRM V Conditions 4500 16 Tvj = 125oC, IDRM =100mA, IRRM = 50mA DG858DW45 CURRENT RATINGS Symbol ITCM Parameter Conditions o Repetitive peak controllable on-state current VD = VDRM, Tj = 125 C, diGQ/dt = 40A/µs, Cs = 4.0µF, LS ≤ 200nH Max. Units 3000 A IT(AV) Mean on-state current THS = 80oC. Double side cooled, half sine 50Hz. 1100 A IT(RMS) RMS on-state current THS = 80oC. Double side cooled, half sine 50Hz. 1720 A 1/7 DG858DW45 SURGE RATINGS Symbol ITSM I2t diT/dt dVD/dt LS Parameter Conditions Max. Units 20.0 kA 2.0 x 106 A 2s 300 A/µs To 66% VDRM; RGK ≤ 22Ω, Tj = 125oC 20 V/µs To 66% VDRM; VRG = -2V, Tj = 125oC 750 V/µs IT = 3000A, VD = VDRM, Tj = 125°C, diGQ/dt = 40A/µs, Cs = 4.0µF 200 nH Surge (non-repetitive) on-state current 10ms half sine. Tj = 125oC I2t for fusing 10ms half sine. Tj =125oC Critical rate of rise of on-state current VD = 3000V, IT = 3000A, Tj =125oC IFG > 40A, Rise time < 1.0µs Rate of rise of off-state voltage Peak stray inductance in snubber circuit GATE RATINGS Symbol Parameter Conditions Min. Max. Units This value maybe exceeded during turn-off - 16 V 20 100 A Average forward gate power - 20 W Peak reverse gate power - 24 kW VRGM Peak reverse gate voltage IFGM Peak forward gate current PFG(AV) PRGM diGQ/dt Rate of rise of reverse gate current 20 60 A/µs tON(min) Minimum permissable on time 50 - µs tOFF(min) Minimum permissable off time 100 - µs Min. Max. Units Double side cooled - 0.011 o C/W Anode side cooled - 0.017 o C/W Cathode side cooled - 0.03 o C/W - 0.0021 o C/W THERMAL AND MECHANICAL DATA Symbol Rth(j-hs) DC thermal resistance - junction to heatsink surface Conditions Clamping force 40kN With mounting compound per contact Rth(c-hs) Contact thermal resistance Tvj Virtual junction temperature -40 125 o C Operating junction/storage temperature range -40 125 o C Clamping force 36.0 44.0 kN TOP/Tstg 2/7 Parameter DG858DW45 CHARACTERISTICS Tj = 125oC unless stated otherwise Symbol Conditions Parameter Min. Max. Units VTM On-state voltage At 3000A peak, IG(ON) = 10A d.c. - 3.85 V IDM Peak off-state current VDRM = 4500V, VRG = 2V - 100 mA IRRM Peak reverse current At VRRM - 50 mA VGT Gate trigger voltage VD = 24V, IT = 100A, Tj = 25oC - 1.2 V IGT Gate trigger current VD = 24V, IT = 100A, Tj = 25oC - 4.0 A IRGM Reverse gate cathode current VRGM = 16V, No gate/cathode resistor - 50 mA EON Turn-on energy VD = 2000V - 4400 mJ td Delay time IT = 3000A, dIT/dt = 300A/µs - 2.0 µs tr Rise time IFG = 40A, rise time < 1.0µs - 6.0 µs Turn-off energy - 12500 mJ tgs Storage time - 26 µs tgf Fall time IT = 3000A, VDM = 4200V - 2.5 µs tgq Gate controlled turn-off time Snubber Cap Cs = 4.0µF, - 28.5 µs QGQ Turn-off gate charge diGQ/dt = 40/µs - 12500 µC QGQT Total turn-off gate charge - 25000 µC IGQM Peak reverse gate current - 950 A EOFF RELIABILITY Conditions DC blocking reliability Vdc = 3500V, Tj = -40 to + 125°C, ambient cosmic radiation at sea level, in open air, 100% duty cycle. Limit Units 100 FIT 3/7 DG858DW45 CURVES Instantaneous on-state current IT - (A) 4000 Measured under pulse conditions. IG(ON) = 10A Half sine wave 10ms 3000 2000 Tj = 125°C 1000 0 1.0 1.5 2.0 2.5 Tj = 25°C 3.0 Instantaneous on-state voltage VTM - (V) Figure 2. On-state characteristics 4/7 3.5 4.0 Anode voltage and current DG858DW45 0.9VD 0.9IT dVD/dt VD VD IT 0.1VD td Gate voltage and current 0.1IFG ITAIL VDP tgs tr tgf tgt dIFG/dt VDM tgq IFG VFG IG(ON) 0.1IGQ tw1 VRG QGQ 0.5IGQM IGQM V(RG)BR Recommended gate conditions: ITCM = 3000A IFG = 40A IG(ON) = 10A d.c. tw1(min) = 20µs IGQM = 1200A diGQ/dt = 40A/µs QGQ = 12500µC VRG(min) = 2V VRG(max) = 18V These are recommended Dynex Semiconductor conditions. Other conditions are permitted according to users gate drive specifications. Figure 3. General switching waveforms 5/7 DG858DW45 PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6 x 2.0 deep (One in each electrode) 12° Auxiliary cathode connector Ø3.0 Gate connector Ø3.0 Anode 27.0 25.5 Ø120 max Ø84.6 nom 72 max Ø84.6 nom Cathode Nominal weight: 1700g Leads double coaxial, length 630mm Package outline type code: W Associated Literature/Products Publication No. Title/Part Number AN4571 DS4567 DS4568 DS4150 DS4153 Application note - GDU9X-XXXXX Series GTO gate drive units. GDU90-20721 GTO gate drive unit. GDU90-20722 GTO gate drive unit. DSF8045SK - Snubber diode. DSF21545SV - Antiparallel/freewheel diode. 6/7 IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact Customer Service. Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. The information is provided without any warranty or guarantee of any kind. This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the most up to date version and has not been superseded. The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design and safety precautions should always be followed to protect persons and property. Product Status & Product Ordering: We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. The annotations are as follows:Target Information: Preliminary Information: No Annotation: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. The product design is complete and final characterisation for volume production is in progress.The datasheet represents the product as it is now understood but details may change. The product has been approved for production and unless otherwise notified by Dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request. Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LIMITED Doddington Road, Lincoln, Lincolnshire, LN6 3LF United Kingdom. Phone: +44 (0) 1522 500500 Fax: +44 (0) 1522 500550 Web: http://www.dynexsemi.com Phone: +44 (0) 1522 502753 / 502901 Fax: +44 (0) 1522 500020 e-mail: [email protected] Dynex Semiconductor Ltd. Technical Documentation – Not for resale.