DGT304SE - Dynex Semiconductor Ltd.

DGT304SE
DGT304SE
Gate Turn-off Thyristor
DS4609-6 July 2014 (LN31741)
APPLICATIONS
KEY PARAMETERS
700A
ITCM
1300V
VDRM
250A
IT(AV)
500V/µs
dVD/dt
500A/µs
diT/dt
■ Variable speed A.C. motor drive inverters (VSD-AC)
■ Uninterruptable Power Supplies
■ High Voltage Converters
■ Choppers
■ Welding
■ Induction Heating
■ DC/DC Converters
FEATURES
■ Double Side Cooling
■ High Reliability In Service
■ High Voltage Capability
■ Fault Protection Without Fuses
■ High Surge Current Capability
■ Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces Acoustic
Cladding Necessary For Environmental Requirements
Outline type code: E.
See Package Details for further information.
VOLTAGE RATINGS
Type Number
DGT304SE13
Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage
VDRM
VRRM
V
V
1300
16
Conditions
Tvj = 125oC, IDM = 50mA,
IRRM = 50mA, VRG = 2V
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
Units
700
A
ITCM
Repetitive peak controllable on-state current VD = 60%VDRM, Tj = 125oC, diGQ/dt =15A/µs, Cs = 2.0µF
IT(AV)
Mean on-state current
THS = 80oC. Double side cooled. Half sine 50Hz.
250
A
IT(RMS)
RMS on-state current
THS = 80oC. Double side cooled. Half sine 50Hz.
390
A
1/13
www.dynexsemi.com
DGT304SE
SURGE RATINGS
Symbol
ITSM
I2t
diT/dt
dVD/dt
Conditions
Parameter
Max.
Units
Surge (non-repetitive) on-state current
10ms half sine. Tj = 125oC
4.0
kA
I2t for fusing
10ms half sine. Tj =125oC
80000
A2s
Critical rate of rise of on-state current
VD = 60% VDRM, IT = 700A, Tj = 125oC, IFG > 20A,
Rise time < 1.0µs
500
A/µs
Rate of rise of off-state voltage
To 80% VDRM; RGK ≤ 1.5Ω, Tj = 125oC
500
V/µs
GATE RATINGS
Symbol
Parameter
Conditions
Max.
Units
-
16
V
VRGM
Peak reverse gate voltage
IFGM
Peak forward gate current
-
50
A
Average forward gate power
-
10
W
Peak reverse gate power
-
6
kW
PFG(AV)
PRGM
This value maybe exceeded during turn-off
Min.
diGQ/dt
Rate of rise of reverse gate current
10
50
A/µs
tON(min)
Minimum permissable on time
20
-
µs
tOFF(min)
Minimum permissable off time
40
-
µs
Min.
Max.
Units
Double side cooled
-
0.075
o
Anode side cooled
-
0.12
o
Cathode side cooled
-
0.20
o
-
0.018
o
-
125
o
Operating junction/storage temperature range
-40
125
o
Clamping force
5.0
6.0
kN
THERMAL RATINGS
Symbol
Rth(j-hs)
Parameter
DC thermal resistance - junction to heatsink
surface
Rth(c-hs)
Contact thermal resistance
Tvj
Virtual junction temperature
TOP/Tstg
-
Conditions
Clamping force 5.5kN
With mounting compound
per contact
C/W
C/W
C/W
C/W
C
C
2/13
www.dynexsemi.com
DGT304SE
CHARACTERISTICS
Tj = 125oC unless stated otherwise
Symbol
Conditions
Parameter
Min.
Max.
Units
VTM
On-state voltage
At 600A peak, IG(ON) = 2A d.c.
-
2.2
V
IDM
Peak off-state current
At = VDRM, VRG = 2V
-
25
mA
IRRM
Peak reverse current
At VRRM
-
50
mA
VGT
Gate trigger voltage
VD = 24V, IT = 100A, Tj = 25oC
-
0.9
V
IGT
Gate trigger current
VD = 24V, IT = 100A, Tj = 25oC
-
1.0
A
IRGM
Reverse gate cathode current
VRGM = 16V, No gate/cathode resistor
-
50
mA
EON
Turn-on energy
VD = 900V, IT = 600A, dIT/dt = 300A/µs
-
130
mJ
td
Delay time
IFG = 20A, rise time < 1.0µs
-
1.5
µs
tr
Rise time
RL = (Residual inductance 3µH)
-
3.0
µs
-
350
mJ
-
10
µs
-
11
µs
-
0.9
µs
-
11.9
µs
EOFF
ttail
Turn-off energy
Tail time
IT =600A, VDM = 750V
tgs
Storage time
Snubber Cap Cs = 1.5µF,
tgf
Fall time
tgq
Gate controlled turn-off time
diGQ/dt = 15A/µs
RL = (Residual inductance 3µH)
QGQ
Turn-off gate charge
-
700
µC
QGQT
Total turn-off gate charge
-
1400
µC
3/13
www.dynexsemi.com
DGT304SE
CURVES
Fig.1 Gate characteristics
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Dependence of ITCM on CS
Fig.4 Maximum (limit) transient thermal resistance
Fig.5 Surge (non-repetitive) on-state current vs time
4/13
www.dynexsemi.com
DGT304SE
Fig.6 Steady state rectangulerwave conduction loss - double side cooled
Fig.7 Steady state sinusoidal wave conduction loss - double side cooled
5/13
www.dynexsemi.com
DGT304SE
Fig.8 Turn-on energy vs on-state current
Fig.9 Turn-on energy vs peak forward gate current
Fig.10 Turn-on energy vs on-state current
Fig.11 Turn-on energy vs peak forward gate current
6/13
www.dynexsemi.com
DGT304SE
Fig.12 Turn-on energy vs rate of rise of on-state current
Fig.13 Delay time and rise time vs on-state current
Fig.14 Delay time and rise time vs peak forward gate current
Fig.15 Turn-off energy vs on-state current
7/13
www.dynexsemi.com
DGT304SE
Fig.16 Turn-off energy vs rate of rise of reverse gate current
Fig.17 Turn-off energy vs on-state current
Fig.18 Turn-off energy vs rate of rise of reverse gate current
Fig.19 Turn-off energy vs on-state current with CS as parameter
8/13
www.dynexsemi.com
DGT304SE
Fig.20 Storage time vs on-state current
Fig.21 Storage time vs rate of rise of reverse gate current
Fig.22 Fall time vs on-state current
Fig.23 Fall time vs rate of rise of reverse gate current
9/13
www.dynexsemi.com
DGT304SE
Fig.24 Peak reverse gate current vs on-state current
Fig.25 Peak reverse gate current vs rate of rise of reverse
gate current
Fig.26 Turn-off gate charge vs on-state current
Fig.27 Turn-off gate charge vs rate of rise of reverse
gate current
10/13
www.dynexsemi.com
DGT304SE
Anode voltage and current
Fig.28 Dependence of critical dVD/dt on gate-cathode
resistance and gate-cathode reverse voltage
0.9VD
0.9IT
dVD/dt
VD
IT
0.1VD
td
ITAIL
VDP
tgs
tr
Recommended gate conditions:ITCM = 700A
IFG = 20A
dIFG/dt = 20A/µs
IG(ON) = 2A d.c.
t
= 4.5µs
w1(min)
VD VDM
IGQM = 120A
dIGQ/dt = 15A/µs
QGQ = 700µc
VRG(min) = 2V
VRG(max) = 16V
These are recommended Dynex Semiconductor
conditions. Other conditions are permitted
according to users gate drive specifications.
tgf
tgt
Gate voltage and current
dIFG/dt
0.1IFG
tgq
IFG
VFG
IG(ON)
0.1IGQ
tw1
VRG
QGQ
0.5IGQM
IGQM
V(RG)BR
Fig.29 General switching waveforms
11/13
www.dynexsemi.com
DGT304SE
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
30˚
15˚
2 holes Ø3.6 ± 0.1 x 2.0 ± 0.1 deep
(One in each electrode)
Cathode tab
Cathode
Ø42max
Ø25nom.
Gate
15
14
Ø25nom.
Anode
Nominal weight: 82g
Clamping force: 6kN ±10%
Leads 12AWG cable160mm long
Package outline type code: E
12/13
www.dynexsemi.com
IMPORTANT INFORMATION:
This publication is provided for information only and not for resale.
The products and information in this publication are intended for use by appropriately trained technical personnel.
Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute
any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of
the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements
are met. Should additional product information be needed please contact Customer Service.
Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical
errors. The information is provided without any warranty or guarantee of any kind.
This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the
most up to date version and has not been superseded.
The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property.
The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or
malfunction.
The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use
protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any
electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves.
Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the
product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include
potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design
and safety precautions should always be followed to protect persons and property.
Product Status & Product Ordering:
We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for
production. The annotations are as follows:Target Information:
Preliminary Information:
No Annotation:
This is the most tentative form of information and represents a very preliminary specification.
No actual design work on the product has been started.
The product design is complete and final characterisation for volume production is in
progress.The datasheet represents the product as it is now understood but details may change.
The product has been approved for production and unless otherwise notified by Dynex any
product ordered will be supplied to the current version of the data sheet prevailing at the
time of our order acknowledgement.
All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request.
Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their
respective owners.
HEADQUARTERS OPERATIONS
CUSTOMER SERVICE
DYNEX SEMICONDUCTOR LIMITED
Doddington Road, Lincoln, Lincolnshire, LN6 3LF
United Kingdom.
Phone: +44 (0) 1522 500500
Fax:
+44 (0) 1522 500550
Web: http://www.dynexsemi.com
Phone: +44 (0) 1522 502753 / 502901
Fax:
+44 (0) 1522 500020
e-mail: power_solutions@dynexsemi.com
 Dynex Semiconductor Ltd.
Technical Documentation – Not for resale.