DGT304SE DGT304SE Gate Turn-off Thyristor DS4609-6 July 2014 (LN31741) APPLICATIONS KEY PARAMETERS 700A ITCM 1300V VDRM 250A IT(AV) 500V/µs dVD/dt 500A/µs diT/dt ■ Variable speed A.C. motor drive inverters (VSD-AC) ■ Uninterruptable Power Supplies ■ High Voltage Converters ■ Choppers ■ Welding ■ Induction Heating ■ DC/DC Converters FEATURES ■ Double Side Cooling ■ High Reliability In Service ■ High Voltage Capability ■ Fault Protection Without Fuses ■ High Surge Current Capability ■ Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements Outline type code: E. See Package Details for further information. VOLTAGE RATINGS Type Number DGT304SE13 Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage VDRM VRRM V V 1300 16 Conditions Tvj = 125oC, IDM = 50mA, IRRM = 50mA, VRG = 2V CURRENT RATINGS Symbol Parameter Conditions Max. Units 700 A ITCM Repetitive peak controllable on-state current VD = 60%VDRM, Tj = 125oC, diGQ/dt =15A/µs, Cs = 2.0µF IT(AV) Mean on-state current THS = 80oC. Double side cooled. Half sine 50Hz. 250 A IT(RMS) RMS on-state current THS = 80oC. Double side cooled. Half sine 50Hz. 390 A 1/13 www.dynexsemi.com DGT304SE SURGE RATINGS Symbol ITSM I2t diT/dt dVD/dt Conditions Parameter Max. Units Surge (non-repetitive) on-state current 10ms half sine. Tj = 125oC 4.0 kA I2t for fusing 10ms half sine. Tj =125oC 80000 A2s Critical rate of rise of on-state current VD = 60% VDRM, IT = 700A, Tj = 125oC, IFG > 20A, Rise time < 1.0µs 500 A/µs Rate of rise of off-state voltage To 80% VDRM; RGK ≤ 1.5Ω, Tj = 125oC 500 V/µs GATE RATINGS Symbol Parameter Conditions Max. Units - 16 V VRGM Peak reverse gate voltage IFGM Peak forward gate current - 50 A Average forward gate power - 10 W Peak reverse gate power - 6 kW PFG(AV) PRGM This value maybe exceeded during turn-off Min. diGQ/dt Rate of rise of reverse gate current 10 50 A/µs tON(min) Minimum permissable on time 20 - µs tOFF(min) Minimum permissable off time 40 - µs Min. Max. Units Double side cooled - 0.075 o Anode side cooled - 0.12 o Cathode side cooled - 0.20 o - 0.018 o - 125 o Operating junction/storage temperature range -40 125 o Clamping force 5.0 6.0 kN THERMAL RATINGS Symbol Rth(j-hs) Parameter DC thermal resistance - junction to heatsink surface Rth(c-hs) Contact thermal resistance Tvj Virtual junction temperature TOP/Tstg - Conditions Clamping force 5.5kN With mounting compound per contact C/W C/W C/W C/W C C 2/13 www.dynexsemi.com DGT304SE CHARACTERISTICS Tj = 125oC unless stated otherwise Symbol Conditions Parameter Min. Max. Units VTM On-state voltage At 600A peak, IG(ON) = 2A d.c. - 2.2 V IDM Peak off-state current At = VDRM, VRG = 2V - 25 mA IRRM Peak reverse current At VRRM - 50 mA VGT Gate trigger voltage VD = 24V, IT = 100A, Tj = 25oC - 0.9 V IGT Gate trigger current VD = 24V, IT = 100A, Tj = 25oC - 1.0 A IRGM Reverse gate cathode current VRGM = 16V, No gate/cathode resistor - 50 mA EON Turn-on energy VD = 900V, IT = 600A, dIT/dt = 300A/µs - 130 mJ td Delay time IFG = 20A, rise time < 1.0µs - 1.5 µs tr Rise time RL = (Residual inductance 3µH) - 3.0 µs - 350 mJ - 10 µs - 11 µs - 0.9 µs - 11.9 µs EOFF ttail Turn-off energy Tail time IT =600A, VDM = 750V tgs Storage time Snubber Cap Cs = 1.5µF, tgf Fall time tgq Gate controlled turn-off time diGQ/dt = 15A/µs RL = (Residual inductance 3µH) QGQ Turn-off gate charge - 700 µC QGQT Total turn-off gate charge - 1400 µC 3/13 www.dynexsemi.com DGT304SE CURVES Fig.1 Gate characteristics Fig.2 Maximum (limit) on-state characteristics Fig.3 Dependence of ITCM on CS Fig.4 Maximum (limit) transient thermal resistance Fig.5 Surge (non-repetitive) on-state current vs time 4/13 www.dynexsemi.com DGT304SE Fig.6 Steady state rectangulerwave conduction loss - double side cooled Fig.7 Steady state sinusoidal wave conduction loss - double side cooled 5/13 www.dynexsemi.com DGT304SE Fig.8 Turn-on energy vs on-state current Fig.9 Turn-on energy vs peak forward gate current Fig.10 Turn-on energy vs on-state current Fig.11 Turn-on energy vs peak forward gate current 6/13 www.dynexsemi.com DGT304SE Fig.12 Turn-on energy vs rate of rise of on-state current Fig.13 Delay time and rise time vs on-state current Fig.14 Delay time and rise time vs peak forward gate current Fig.15 Turn-off energy vs on-state current 7/13 www.dynexsemi.com DGT304SE Fig.16 Turn-off energy vs rate of rise of reverse gate current Fig.17 Turn-off energy vs on-state current Fig.18 Turn-off energy vs rate of rise of reverse gate current Fig.19 Turn-off energy vs on-state current with CS as parameter 8/13 www.dynexsemi.com DGT304SE Fig.20 Storage time vs on-state current Fig.21 Storage time vs rate of rise of reverse gate current Fig.22 Fall time vs on-state current Fig.23 Fall time vs rate of rise of reverse gate current 9/13 www.dynexsemi.com DGT304SE Fig.24 Peak reverse gate current vs on-state current Fig.25 Peak reverse gate current vs rate of rise of reverse gate current Fig.26 Turn-off gate charge vs on-state current Fig.27 Turn-off gate charge vs rate of rise of reverse gate current 10/13 www.dynexsemi.com DGT304SE Anode voltage and current Fig.28 Dependence of critical dVD/dt on gate-cathode resistance and gate-cathode reverse voltage 0.9VD 0.9IT dVD/dt VD IT 0.1VD td ITAIL VDP tgs tr Recommended gate conditions:ITCM = 700A IFG = 20A dIFG/dt = 20A/µs IG(ON) = 2A d.c. t = 4.5µs w1(min) VD VDM IGQM = 120A dIGQ/dt = 15A/µs QGQ = 700µc VRG(min) = 2V VRG(max) = 16V These are recommended Dynex Semiconductor conditions. Other conditions are permitted according to users gate drive specifications. tgf tgt Gate voltage and current dIFG/dt 0.1IFG tgq IFG VFG IG(ON) 0.1IGQ tw1 VRG QGQ 0.5IGQM IGQM V(RG)BR Fig.29 General switching waveforms 11/13 www.dynexsemi.com DGT304SE PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 30˚ 15˚ 2 holes Ø3.6 ± 0.1 x 2.0 ± 0.1 deep (One in each electrode) Cathode tab Cathode Ø42max Ø25nom. Gate 15 14 Ø25nom. Anode Nominal weight: 82g Clamping force: 6kN ±10% Leads 12AWG cable160mm long Package outline type code: E 12/13 www.dynexsemi.com IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact Customer Service. Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. The information is provided without any warranty or guarantee of any kind. This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the most up to date version and has not been superseded. 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