DF051 DF051 Fast Recovery Diode Advance Information DS4147-7 July 2014 (LN31795) KEY PARAMETERS VRRM 2500V IF(AV) 1490A IFSM 14000A Qr 800µC trr 5.0µs APPLICATIONS ■ Induction Heating ■ A.C. Motor Drives ■ Inverters And Choppers ■ Welding ■ High Frequency Rectification ■ UPS FEATURES ■ Double side cooling ■ High surge capability ■ Low recovery charge VOLTAGE RATINGS Type Number DF051 25 DF051 24 DF051 22 DF051 20 Repetitive Peak Reverse Voltage VRRM V 2500 2400 2200 2000 Conditions VRSM = VRRM + 100V Lower voltage grades available. Outline type code: CB450. See Package Details for further information. Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table, e.g.: DF051 22 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/7 www.dynexsemi.com DF051 CURRENT RATINGS Symbol Parameter Conditions Max. Units Double Side Cooled IF(AV) Mean forward current Half wave resistive load, Tcase = 65oC 1490 A IF(RMS) RMS value Tcase = 65oC 2340 A Continuous (direct) forward current Tcase = 65oC 2160 A 995 A IF Single Side Cooled (Anode side) IF(AV) Mean forward current Half wave resistive load, Tcase = 65oC IF(RMS) RMS value Tcase = 65oC 1560 A Continuous (direct) forward current Tcase = 65oC 1390 A Max. Units 14.0 kA 980 x 103 A2s 11.2 kA 627 x 103 A2s IF SURGE RATINGS Symbol IFSM I2t IFSM I2t Parameter Conditions Surge (non-repetitive) forward current 10ms half sine; with 0% VRRM, Tj = 150oC I2t for fusing Surge (non-repetitive) forward current 10ms half sine; with 50% VRRM, Tj = 150oC I2t for fusing THERMAL AND MECHANICAL DATA Parameter Symbol Double side cooled Rth(j-c) Min. Max. Units dc - 0.018 o Anode dc - 0.034 o Cathode dc - 0.038 o C/W Double side - 0.003 o C/W Single side - 0.006 o C/W - 150 o Conditions Thermal resistance - junction to case C/W C/W Single side cooled Rth(c-h) Thermal resistance - case to heatsink Clamping force 23.5kN with mounting compound Tvj Virtual junction temperature Tstg Storage temperature range -55 150 o Clamping force 21.0 25.0 kN - On-state (conducting) C C 2/7 www.dynexsemi.com DF051 CHARACTERISTICS Symbol Conditions Parameter Typ. Max. Units VFM Forward voltage At 1500A peak, Tcase = 25oC - 1.85 V IRRM Peak reverse current At VRRM, Tcase = 150oC - 100 mA 5.0 - µs trr Reverse recovery time Recovered charge (50% chord) IF = 1000A, diRR/dt = 100A/µs - 800 µC IRM Reverse recovery current Tcase = 150oC, VR = 100V - 250 A K Soft factor 1.6 - - QRA1 VTO Threshold voltage At Tvj = 150oC - 1.1 V rT Slope resistance At Tvj = 150oC - 0.5 mΩ Forward recovery voltage di/dt = 1000A/µs, Tj = 125oC - - V VFRM DEFINITION OF K FACTOR AND QRA1 QRA1 = 0.5x IRR(t1 + t2) dIR/dt t1 t2 k = t1/t2 τ 0.5x IRR IRR CURVES 3/7 www.dynexsemi.com DF051 CURVES 500 4000 Measured under pulse conditions Measured under pulse conditions Tj = 25˚C Tj = 150˚C 400 Instantaneous forward current IF - (A) Instantaneous forward current IF - (A) 3500 3000 2500 2000 1500 300 200 Tj = 150˚C Tj = 25˚C 100 1000 500 0 1.0 2.0 3.0 0 1.0 4.0 Fig.2 Maximum (limit) forward characteristics 1.6 10000 IF 50µs QS = Conditions: Tj = 150˚C, VR = 100V Conditions: Tj = 150˚C, VR = 100V 0 QS tp = 1ms dIR/dt Reverse recovery current Irr - (A) Reverse recovered charge Qrr - (µC) 1.4 Fig.3 Maximum (limit) forward characteristics 100000 IRR 10000 A B C 1000 D E 100 1 1.2 Instantaneous forward voltage VF - (V) Instantaneous forward voltage VF - (V) 10 A: IF = 2000A B: IF = 1000A C: IF = 500A D: IF = 200A E: IF = 100A 100 Rate of rise of reverse current dIR/dt - (A/µs) Fig.4 Recovered charge 1000 1000 A B C D E 100 A: IF = 2000A B: IF = 1000A C: IF = 500A D: IF = 200A E: IF = 100A 10 1 10 100 Rate of rise of reverse current dIR/dt - (A/µs) 1000 Fig.5 Typical reverse recovery current vs rate of rise of forward current 4/7 www.dynexsemi.com DF051 Thermal impedance - junction to case, Zth(j-c) - (˚C/W) 0.1 d.c. Double side cooled 0.01 0.001 0.001 0.01 0.1 Time - (s) 1 10 Fig.6 Maximum (limit) transient thermal impedance junction to case - (˚C/W) 5/7 www.dynexsemi.com DF051 PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6x2.0 deep (in both electrodes) Cathode 27.0 25.4 Ø76 max Ø48 nom Ø48 nom Anode Nominal weight: 500g Clamping force: 19.6kN ± 10% Package outline type code: CB450 6/7 www.dynexsemi.com IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact Customer Service. Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. The information is provided without any warranty or guarantee of any kind. This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the most up to date version and has not been superseded. The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design and safety precautions should always be followed to protect persons and property. Product Status & Product Ordering: We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. The annotations are as follows:Target Information: Preliminary Information: No Annotation: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. The product design is complete and final characterisation for volume production is in progress.The datasheet represents the product as it is now understood but details may change. 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