DGT305RE DGT305RE Reverse Blocking Gate Turn-off Thyristor DS5520-4 July 2014 (LN31742) FEATURES KEY PARAMETERS ITCM 700A VDRM 1800V High Reliability In Service IT(AV) 240A ■ High Voltage Capability dVD/dt 500V/µs ■ Fault Protection Without Fuses diT/dt 500A/µs ■ High Surge Current Capability ■ Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements ■ Double Side Cooling ■ Reverse Blocking Capability ■ APPLICATIONS ■ Variable speed A.C. motor drive inverters (VSD-AC) ■ Uninterruptable Power Supplies ■ High Voltage Converters ■ Choppers ■ Welding ■ Induction Heating ■ DC/DC Converters Outline type code: E (See Package Details for further information) Fig. 1 Package outline VOLTAGE RATINGS Type Number DGT305SE18 Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage VDRM VRRM V V 1800 1800 Conditions Tvj = 125oC, IDM = 50mA, IRRM = 50mA, VRG = 2V CURRENT RATINGS Symbol Parameter Conditions Max. Units 700 A ITCM Repetitive peak controllable on-state current VD = 67%VDRM, Tj = 125oC, diGQ/dt =15A/µs, Cs = 1.5µF IT(AV) Mean on-state current THS = 80oC. Double side cooled. Half sine 50Hz. 240 A IT(RMS) RMS on-state current THS = 80oC. Double side cooled. Half sine 50Hz. 373 A 1/14 www.dynexsemi.com DGT305RE SURGE RATINGS Symbol ITSM I2t diT/dt dVD/dt VDP Conditions Parameter Max. Units Surge (non-repetitive) on-state current 10ms half sine. Tj = 125oC 4.0 kA I2t for fusing 10ms half sine. Tj =125oC 80000 A2s Critical rate of rise of on-state current VD = 67% VDRM, IT = 700A, Tj = 125oC, IFG > 20A, Rise time < 1.0µs 500 A/µs Rate of rise of off-state voltage To 80% VDRM; RGK ≤ 1.5Ω, Tj = 125oC 500 V/µs 400 V Peak forward transient voltage during current VD = 67% VDRM, IT = 700A, Tj = 125oC, fall time diGQ/dt =15A/µs, Cs = 1.5µF GATE RATINGS Symbol Parameter Conditions Min. Max. Units - 16 V VRGM Peak reverse gate voltage IFGM Peak forward gate current - 50 A Average forward gate power - 10 W Peak reverse gate power - 6 kW PFG(AV) PRGM This value maybe exceeded during turn-off diGQ/dt Rate of rise of reverse gate current 10 50 A/µs tON(min) Minimum permissable on time 20 - µs tOFF(min) Minimum permissable off time 40 - µs Min. Max. Units Double side cooled - 0.075 o Anode side cooled - 0.12 o Cathode side cooled - 0.20 o - 0.018 o - 125 o Operating junction/storage temperature range –40 125 o Clamping force 5.0 6.0 kN THERMAL RATINGS Symbol Rth(j-hs) Parameter DC thermal resistance - junction to heatsink surface Rth(c-hs) Contact thermal resistance Tvj Virtual junction temperature TOP/Tstg - Conditions Clamping force 5.5kN With mounting compound per contact C/W C/W C/W C/W C C 2/14 www.dynexsemi.com DGT305RE CHARACTERISTICS Tj = 125oC unless stated otherwise Symbol Conditions Parameter Min. Max. Units VTM On-state voltage At 600A peak, IG(ON) = 2A d.c. - 2.5 V IDM Peak off-state current At = VDRM, VRG = 2V - 50 mA IRRM Peak reverse current At VRRM - 50 mA VGT Gate trigger voltage VD = 24V, IT = 100A, Tj = 25oC - 0.75 V IGT Gate trigger current VD = 24V, IT = 100A, Tj = 25oC - 1.2 A IRGM Reverse gate cathode current VRGM = 16V, No gate/cathode resistor - 50 mA EON Turn-on energy VD = 1200V, IT = 600A, - 160 mJ td Delay time IFG = 20A, rise time < 1.0µs - 1.1 µs tr Rise time RL = (Residual inductance 2.75µH) - 2.5 µs - 550 mJ - 30 µs - 12 µs - 1.5 µs - 13.5 µs EOFF ttail tgs Turn-off energy Tail time Storage time IT =600A, VD = 1200V, Snubber Cap Cs = 1.5µF, tgf Fall time diGQ/dt = 15A/µs tgq Gate controlled turn-off time RL = (Residual inductance 2.75µH) QGQ Turn-off gate charge - 900 µC QGQT Total turn-off gate charge - 1800 µC 3/14 www.dynexsemi.com DGT305RE CURVES Fig.2 Gate characteristics Fig.3 Maximum (limit) on-state characteristics Fig.4 Dependence of ITCM on CS Fig.5 Maximum (limit) transient thermal resistance 4/14 www.dynexsemi.com DGT305RE Fig.6 Surge (non-repetitive) on-state current vs time Fig.7 Steady state rectangulerwave conduction loss - double side cooled 5/14 www.dynexsemi.com DGT305RE Fig.8 Steady state sinusoidal wave conduction loss - double side cooled Fig.9 Turn-on energy vs on-state current Fig.10 Turn-on energy vs peak forward gate current 6/14 www.dynexsemi.com DGT305RE Fig.11 Turn-on energy vs on-state current Fig.13 Turn-on energy vs rate of rise of on-state current Fig.12 Turn-on energy vs peak forward gate current Fig.14 Delay time and rise time vs on-state current 7/14 www.dynexsemi.com DGT305RE Fig.15 Delay time and rise time vs peak forward gate current Fig.16 Turn-off energy vs on-state current Fig.17 Turn-off energy vs rate of rise of reverse gate current Fig.18 Turn-off energy vs on-state current 8/14 www.dynexsemi.com DGT305RE Fig.19 Turn-off energy vs rate of rise of reverse gate current Fig.20 Turn-off energy vs on-state current with CS as parameter Fig.21 Storage time vs on-state current Fig.22 Storage time vs rate of rise of reverse gate current 9/14 www.dynexsemi.com DGT305RE Fig.23 Fall time vs on-state current Fig.24 Fall time vs rate of rise of reverse gate current Fig.25 Peak reverse gate current vs on-state current Fig.26 Peak reverse gate current vs rate of rise of reverse gate current 10/14 www.dynexsemi.com DGT305RE Fig.27 Turn-off gate charge vs on-state current Fig.28 Turn-off gate charge vs rat of rise of reverse gate current Fig.29 Dependence of critical dVD/dt on gate-cathode resistance and gate-cathode reverse voltage 11/14 www.dynexsemi.com Anode voltage and current DGT305RE 0.9VD 0.9IT dVD/dt VD VD IT 0.1VD td VDM ITAIL VDP tgs tr tgf tgt Gate voltage and current dIFG/dt 0.1IFG tgq IFG VFG IG(ON) 0.1IGQ tw1 VRG QGQ 0.5IGQM IGQM V(RG)BR Recommended gate conditions: ITCM = 600A IFG = 20A IG(ON) = 2A d.c. tw1(min) = 4.5µs IGQM = 130A diGQ/dt = 15A/µs QGQ = 900µC VRG(min) = 2V VRG(max) = 16V These are recommended Dynex Semiconductor conditions. Other conditions are permitted according to users gate drive specifications. Fig.30 General switching waveforms 12/14 www.dynexsemi.com DGT305RE PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 30˚ 15˚ 2 holes Ø3.6 ± 0.1 x 2.0 ± 0.1 deep (One in each electrode) Cathode tab Cathode Ø42max Ø25nom. Gate 15 14 Ø25nom. Anode Nominal weight: 82g Clamping force: 6kN ±10% Leads 12 AWG cables 160mm Package outline type code: E 13/14 www.dynexsemi.com IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact Customer Service. Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. The information is provided without any warranty or guarantee of any kind. This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the most up to date version and has not been superseded. The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design and safety precautions should always be followed to protect persons and property. Product Status & Product Ordering: We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. The annotations are as follows:Target Information: Preliminary Information: No Annotation: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. The product design is complete and final characterisation for volume production is in progress.The datasheet represents the product as it is now understood but details may change. The product has been approved for production and unless otherwise notified by Dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request. Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LIMITED Doddington Road, Lincoln, Lincolnshire, LN6 3LF United Kingdom. Phone: +44 (0) 1522 500500 Fax: +44 (0) 1522 500550 Web: http://www.dynexsemi.com Phone: +44 (0) 1522 502753 / 502901 Fax: +44 (0) 1522 500020 e-mail: email@example.com Dynex Semiconductor Ltd. Technical Documentation – Not for resale.