DGT305RE - Dynex Semiconductor Ltd.

DGT305RE
DGT305RE
Reverse Blocking Gate Turn-off Thyristor
DS5520-4 July 2014 (LN31742)
FEATURES
KEY PARAMETERS
ITCM
700A
VDRM
1800V
High Reliability In Service
IT(AV)
240A
■
High Voltage Capability
dVD/dt
500V/µs
■
Fault Protection Without Fuses
diT/dt
500A/µs
■
High Surge Current Capability
■
Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces
Acoustic Cladding Necessary For Environmental
Requirements
■
Double Side Cooling
■
Reverse Blocking Capability
■
APPLICATIONS
■
Variable speed A.C. motor drive inverters (VSD-AC)
■
Uninterruptable Power Supplies
■
High Voltage Converters
■
Choppers
■
Welding
■
Induction Heating
■
DC/DC Converters
Outline type code: E
(See Package Details for further information)
Fig. 1 Package outline
VOLTAGE RATINGS
Type Number
DGT305SE18
Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage
VDRM
VRRM
V
V
1800
1800
Conditions
Tvj = 125oC, IDM = 50mA,
IRRM = 50mA, VRG = 2V
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
Units
700
A
ITCM
Repetitive peak controllable on-state current VD = 67%VDRM, Tj = 125oC, diGQ/dt =15A/µs, Cs = 1.5µF
IT(AV)
Mean on-state current
THS = 80oC. Double side cooled. Half sine 50Hz.
240
A
IT(RMS)
RMS on-state current
THS = 80oC. Double side cooled. Half sine 50Hz.
373
A
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DGT305RE
SURGE RATINGS
Symbol
ITSM
I2t
diT/dt
dVD/dt
VDP
Conditions
Parameter
Max.
Units
Surge (non-repetitive) on-state current
10ms half sine. Tj = 125oC
4.0
kA
I2t for fusing
10ms half sine. Tj =125oC
80000
A2s
Critical rate of rise of on-state current
VD = 67% VDRM, IT = 700A, Tj = 125oC, IFG > 20A,
Rise time < 1.0µs
500
A/µs
Rate of rise of off-state voltage
To 80% VDRM; RGK ≤ 1.5Ω, Tj = 125oC
500
V/µs
400
V
Peak forward transient voltage during current VD = 67% VDRM, IT = 700A, Tj = 125oC,
fall time
diGQ/dt =15A/µs, Cs = 1.5µF
GATE RATINGS
Symbol
Parameter
Conditions
Min.
Max.
Units
-
16
V
VRGM
Peak reverse gate voltage
IFGM
Peak forward gate current
-
50
A
Average forward gate power
-
10
W
Peak reverse gate power
-
6
kW
PFG(AV)
PRGM
This value maybe exceeded during turn-off
diGQ/dt
Rate of rise of reverse gate current
10
50
A/µs
tON(min)
Minimum permissable on time
20
-
µs
tOFF(min)
Minimum permissable off time
40
-
µs
Min.
Max.
Units
Double side cooled
-
0.075
o
Anode side cooled
-
0.12
o
Cathode side cooled
-
0.20
o
-
0.018
o
-
125
o
Operating junction/storage temperature range
–40
125
o
Clamping force
5.0
6.0
kN
THERMAL RATINGS
Symbol
Rth(j-hs)
Parameter
DC thermal resistance - junction to heatsink
surface
Rth(c-hs)
Contact thermal resistance
Tvj
Virtual junction temperature
TOP/Tstg
-
Conditions
Clamping force 5.5kN
With mounting compound
per contact
C/W
C/W
C/W
C/W
C
C
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DGT305RE
CHARACTERISTICS
Tj = 125oC unless stated otherwise
Symbol
Conditions
Parameter
Min.
Max.
Units
VTM
On-state voltage
At 600A peak, IG(ON) = 2A d.c.
-
2.5
V
IDM
Peak off-state current
At = VDRM, VRG = 2V
-
50
mA
IRRM
Peak reverse current
At VRRM
-
50
mA
VGT
Gate trigger voltage
VD = 24V, IT = 100A, Tj = 25oC
-
0.75
V
IGT
Gate trigger current
VD = 24V, IT = 100A, Tj = 25oC
-
1.2
A
IRGM
Reverse gate cathode current
VRGM = 16V, No gate/cathode resistor
-
50
mA
EON
Turn-on energy
VD = 1200V, IT = 600A,
-
160
mJ
td
Delay time
IFG = 20A, rise time < 1.0µs
-
1.1
µs
tr
Rise time
RL = (Residual inductance 2.75µH)
-
2.5
µs
-
550
mJ
-
30
µs
-
12
µs
-
1.5
µs
-
13.5
µs
EOFF
ttail
tgs
Turn-off energy
Tail time
Storage time
IT =600A, VD = 1200V,
Snubber Cap Cs = 1.5µF,
tgf
Fall time
diGQ/dt = 15A/µs
tgq
Gate controlled turn-off time
RL = (Residual inductance 2.75µH)
QGQ
Turn-off gate charge
-
900
µC
QGQT
Total turn-off gate charge
-
1800
µC
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DGT305RE
CURVES
Fig.2 Gate characteristics
Fig.3 Maximum (limit) on-state characteristics
Fig.4 Dependence of ITCM on CS
Fig.5 Maximum (limit) transient thermal resistance
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DGT305RE
Fig.6 Surge (non-repetitive) on-state current vs time
Fig.7 Steady state rectangulerwave conduction loss - double side cooled
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DGT305RE
Fig.8 Steady state sinusoidal wave conduction loss - double side cooled
Fig.9 Turn-on energy vs on-state current
Fig.10 Turn-on energy vs peak forward gate current
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DGT305RE
Fig.11 Turn-on energy vs on-state current
Fig.13 Turn-on energy vs rate of rise of on-state current
Fig.12 Turn-on energy vs peak forward gate current
Fig.14 Delay time and rise time vs on-state current
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DGT305RE
Fig.15 Delay time and rise time vs peak forward gate current
Fig.16 Turn-off energy vs on-state current
Fig.17 Turn-off energy vs rate of rise of reverse gate current
Fig.18 Turn-off energy vs on-state current
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DGT305RE
Fig.19 Turn-off energy vs rate of rise of reverse gate current
Fig.20 Turn-off energy vs on-state current with CS as parameter
Fig.21 Storage time vs on-state current
Fig.22 Storage time vs rate of rise of reverse gate current
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DGT305RE
Fig.23 Fall time vs on-state current
Fig.24 Fall time vs rate of rise of reverse gate current
Fig.25 Peak reverse gate current vs on-state current
Fig.26 Peak reverse gate current vs rate of rise of reverse
gate current
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DGT305RE
Fig.27 Turn-off gate charge vs on-state current
Fig.28 Turn-off gate charge vs rat of rise of reverse gate
current
Fig.29 Dependence of critical dVD/dt on gate-cathode
resistance and gate-cathode reverse voltage
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Anode voltage and current
DGT305RE
0.9VD
0.9IT
dVD/dt
VD
VD
IT
0.1VD
td
VDM
ITAIL
VDP
tgs
tr
tgf
tgt
Gate voltage and current
dIFG/dt
0.1IFG
tgq
IFG
VFG
IG(ON)
0.1IGQ
tw1
VRG
QGQ
0.5IGQM
IGQM
V(RG)BR
Recommended gate conditions:
ITCM = 600A
IFG = 20A
IG(ON) = 2A d.c.
tw1(min) = 4.5µs
IGQM = 130A
diGQ/dt = 15A/µs
QGQ = 900µC
VRG(min) = 2V
VRG(max) = 16V
These are recommended Dynex Semiconductor conditions. Other conditions are permitted
according to users gate drive specifications.
Fig.30 General switching waveforms
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DGT305RE
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
30˚
15˚
2 holes Ø3.6 ± 0.1 x 2.0 ± 0.1 deep
(One in each electrode)
Cathode tab
Cathode
Ø42max
Ø25nom.
Gate
15
14
Ø25nom.
Anode
Nominal weight: 82g
Clamping force: 6kN ±10%
Leads 12 AWG cables 160mm
Package outline type code: E
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IMPORTANT INFORMATION:
This publication is provided for information only and not for resale.
The products and information in this publication are intended for use by appropriately trained technical personnel.
Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute
any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of
the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements
are met. Should additional product information be needed please contact Customer Service.
Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical
errors. The information is provided without any warranty or guarantee of any kind.
This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the
most up to date version and has not been superseded.
The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property.
The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or
malfunction.
The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use
protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any
electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves.
Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the
product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include
potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design
and safety precautions should always be followed to protect persons and property.
Product Status & Product Ordering:
We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for
production. The annotations are as follows:Target Information:
Preliminary Information:
No Annotation:
This is the most tentative form of information and represents a very preliminary specification.
No actual design work on the product has been started.
The product design is complete and final characterisation for volume production is in
progress.The datasheet represents the product as it is now understood but details may change.
The product has been approved for production and unless otherwise notified by Dynex any
product ordered will be supplied to the current version of the data sheet prevailing at the
time of our order acknowledgement.
All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request.
Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their
respective owners.
HEADQUARTERS OPERATIONS
CUSTOMER SERVICE
DYNEX SEMICONDUCTOR LIMITED
Doddington Road, Lincoln, Lincolnshire, LN6 3LF
United Kingdom.
Phone: +44 (0) 1522 500500
Fax:
+44 (0) 1522 500550
Web: http://www.dynexsemi.com
Phone: +44 (0) 1522 502753 / 502901
Fax:
+44 (0) 1522 500020
e-mail: power_solutions@dynexsemi.com
 Dynex Semiconductor Ltd.
Technical Documentation – Not for resale.