DSF8045SK DSF8045SK Fast Recovery Diode Advance Information DS4146-8 July 2014 LN(31792) APPLICATIONS KEY PARAMETERS VRRM 4500V IF(AV) 430A IFSM 3500A Qr 440µC trr 3.07µs ■ Snubber Diode For GTO Applications FEATURES ■ Double side cooling ■ High surge capability ■ Low recovery charge VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V DSF8045SK45 4500 DSF8045SK44 4400 DSF8045SK43 4300 DSF8045SK42 4200 DSF8045SK41 4100 DSF8045SK40 4000 Lower voltage grades available. Conditions VRSM = VRRM + 100V Outline type code: K. See Package Details for further information. Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table, e.g.: DSF8045SK43 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/7 www.dynexsemi.com DSF8045SK CURRENT RATINGS Symbol Parameter Conditions Max. Units Double Side Cooled IF(AV) Mean forward current Half wave resistive load, Tcase = 65oC 430 A IF(RMS) RMS value Tcase = 65oC 680 A Continuous (direct) forward current Tcase = 65oC 600 A IF Single Side Cooled (Anode side) IF(AV) Mean forward current Half wave resistive load, Tcase = 65oC 285 A IF(RMS) RMS value Tcase = 65oC 445 A Continuous (direct) forward current Tcase = 65oC 380 A IF SURGE RATINGS Symbol IFSM I2t IFSM I2t Parameter Conditions Max. Units 3.5 kA 61.25 x 103 A2s 2.8 kA 39.2 x 103 A2s Surge (non-repetitive) forward current 10ms half sine; with 0% VRRM, Tj = 150oC I2t for fusing Surge (non-repetitive) forward current 10ms half sine; with 50% VRRM, Tj = 150oC I2t for fusing THERMAL AND MECHANICAL DATA Parameter Symbol Double side cooled Rth(j-c) Min. Max. Units dc - 0.048 o Anode dc - 0.09 o Cathode dc - 0.103 o Double side - 0.01 o Single side - 0.02 o - 150 o o Conditions Thermal resistance - junction to case C/W C/W Single side cooled Rth(c-h) Thermal resistance - case to heatsink Clamping force 8.0kN with mounting compound Tvj Virtual junction temperature Tstg Storage temperature range -55 175 Clamping force 7.0 9.0 - Forward (conducting) C/W C/W C/W C C kN 2/7 www.dynexsemi.com DSF8045SK CHARACTERISTICS Symbol Conditions Parameter Typ. Max. Units VFM Forward voltage At 1000A peak, Tcase = 25oC - 4.0 V IRRM Peak reverse current At VRRM, Tcase = 150oC - 50 mA - 3.07 µs trr Reverse recovery time Recovered charge (50% chord) IF = 1000A, diRR/dt = 100A/µs - 440 µC IRM Reverse recovery current Tcase = 150oC, VR = 100V - 240 A K Soft factor - - - QRA1 VTO Threshold voltage At Tvj = 150oC - 1.7 V rT Slope resistance At Tvj = 150oC - 2.1 mΩ Forward recovery voltage di/dt = 1000A/µs, Tj = 125oC - 300 V VFRM DEFINITION OF K FACTOR AND QRA1 QRA1 = 0.5x IRR(t1 + t2) dIR/dt t1 t2 k = t1/t2 τ 0.5x IRR IRR 3/7 www.dynexsemi.com DSF8045SK CURVES 2000 500 Measured under pulse conditions Measured under pulse conditions Instantaneous forward current IF - (A) Instantaneous forward current IF - (A) 400 Tj = 25˚C 1500 Tj = 150˚C 1000 Tj = 150˚C 300 200 Tj = 25˚C 100 500 2.0 3.0 4.0 5.0 Instantaneous forward voltage VF - (V) 0 1.5 6.0 Fig.2 Maximum (limit) forward characteristics 10000 Current waveform VFR IF 50µs QS = QS di = δy dt δx Reverse recovered charge Qrr - (µC) δy Conditions: Tj = 150˚C, VR = 100V 0 Voltage waveform 500 Transient forward votage VFP - (V) 3.5 Fig.3 Maximum (limit) forward characteristics 600 400 2.0 2.5 3.0 Instantaneous forward voltage VF - (V) δx Tj = 125˚C limit 300 Tj = 25˚C limit 200 tp = 1ms dIR/dt IRR 1000 IF = 2000A IF = 1000A 100 0 0 500 1000 1500 Rate of rise of forward current dIF/dt - (A/µs) Fig.4 Transient forward voltage vs rate of rise of forward current 2000 100 10 100 Rate of rise of reverse current dIR/dt - (A/µs) 1000 Fig.5 Recovered charge 4/7 www.dynexsemi.com DSF8045SK 1000 0.1 Single side cooled Thermal impedance - junction to case, Zth(j-c) - (˚C/W) Conditions: Tj = 150˚C, VR = 100V IF = 2000A Reverse recovery current Irr - (A) IF = 1000A 100 10 10 100 Rate of rise of reverse current dIR/dt - (A/µs) 1000 Fig.6 Typical reverse recovery current vs rate of rise of forward current Double side cooled 0.01 0.001 0.001 0.01 0.1 Time - (s) 1 10 Fig.7 Maximum (limit) transient thermal impedance junction to case - (˚C/W) 5/7 www.dynexsemi.com DSF8045SK PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 Holes Ø3.6 x 2.0 deep (One in each electrode) Cathode Ø42 max 27.0 25.4 Ø25 nom Ø25 nom Anode Nominal weight: 160g Clamping force: 8kN ±10% Package outline type code: K 6/7 www.dynexsemi.com IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact Customer Service. 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