DSF8045SK - Dynex Semiconductor Ltd.

DSF8045SK
DSF8045SK
Fast Recovery Diode
Advance Information
DS4146-8 July 2014 LN(31792)
APPLICATIONS
KEY PARAMETERS
VRRM
4500V
IF(AV)
430A
IFSM
3500A
Qr
440µC
trr
3.07µs
■ Snubber Diode For GTO Applications
FEATURES
■ Double side cooling
■ High surge capability
■ Low recovery charge
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
VRRM
V
DSF8045SK45
4500
DSF8045SK44
4400
DSF8045SK43
4300
DSF8045SK42
4200
DSF8045SK41
4100
DSF8045SK40
4000
Lower voltage grades available.
Conditions
VRSM = VRRM + 100V
Outline type code: K.
See Package Details for further information.
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DSF8045SK43
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
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DSF8045SK
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
Units
Double Side Cooled
IF(AV)
Mean forward current
Half wave resistive load, Tcase = 65oC
430
A
IF(RMS)
RMS value
Tcase = 65oC
680
A
Continuous (direct) forward current
Tcase = 65oC
600
A
IF
Single Side Cooled (Anode side)
IF(AV)
Mean forward current
Half wave resistive load, Tcase = 65oC
285
A
IF(RMS)
RMS value
Tcase = 65oC
445
A
Continuous (direct) forward current
Tcase = 65oC
380
A
IF
SURGE RATINGS
Symbol
IFSM
I2t
IFSM
I2t
Parameter
Conditions
Max.
Units
3.5
kA
61.25 x 103
A2s
2.8
kA
39.2 x 103
A2s
Surge (non-repetitive) forward current
10ms half sine; with 0% VRRM, Tj = 150oC
I2t for fusing
Surge (non-repetitive) forward current
10ms half sine; with 50% VRRM, Tj = 150oC
I2t for fusing
THERMAL AND MECHANICAL DATA
Parameter
Symbol
Double side cooled
Rth(j-c)
Min.
Max.
Units
dc
-
0.048
o
Anode dc
-
0.09
o
Cathode dc
-
0.103
o
Double side
-
0.01
o
Single side
-
0.02
o
-
150
o
o
Conditions
Thermal resistance - junction to case
C/W
C/W
Single side cooled
Rth(c-h)
Thermal resistance - case to heatsink
Clamping force 8.0kN
with mounting compound
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-55
175
Clamping force
7.0
9.0
-
Forward (conducting)
C/W
C/W
C/W
C
C
kN
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DSF8045SK
CHARACTERISTICS
Symbol
Conditions
Parameter
Typ.
Max.
Units
VFM
Forward voltage
At 1000A peak, Tcase = 25oC
-
4.0
V
IRRM
Peak reverse current
At VRRM, Tcase = 150oC
-
50
mA
-
3.07
µs
trr
Reverse recovery time
Recovered charge (50% chord)
IF = 1000A, diRR/dt = 100A/µs
-
440
µC
IRM
Reverse recovery current
Tcase = 150oC, VR = 100V
-
240
A
K
Soft factor
-
-
-
QRA1
VTO
Threshold voltage
At Tvj = 150oC
-
1.7
V
rT
Slope resistance
At Tvj = 150oC
-
2.1
mΩ
Forward recovery voltage
di/dt = 1000A/µs, Tj = 125oC
-
300
V
VFRM
DEFINITION OF K FACTOR AND QRA1
QRA1 = 0.5x IRR(t1 + t2)
dIR/dt
t1
t2
k = t1/t2
τ
0.5x IRR
IRR
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DSF8045SK
CURVES
2000
500
Measured under pulse conditions
Measured under pulse conditions
Instantaneous forward current IF - (A)
Instantaneous forward current IF - (A)
400
Tj = 25˚C
1500
Tj = 150˚C
1000
Tj = 150˚C
300
200
Tj = 25˚C
100
500
2.0
3.0
4.0
5.0
Instantaneous forward voltage VF - (V)
0
1.5
6.0
Fig.2 Maximum (limit) forward characteristics
10000
Current
waveform
VFR
IF
50µs
QS =
QS
di = δy
dt δx
Reverse recovered charge Qrr - (µC)
δy
Conditions:
Tj = 150˚C,
VR = 100V
0
Voltage
waveform
500
Transient forward votage VFP - (V)
3.5
Fig.3 Maximum (limit) forward characteristics
600
400
2.0
2.5
3.0
Instantaneous forward voltage VF - (V)
δx
Tj = 125˚C limit
300
Tj = 25˚C limit
200
tp = 1ms
dIR/dt
IRR
1000
IF = 2000A
IF = 1000A
100
0
0
500
1000
1500
Rate of rise of forward current dIF/dt - (A/µs)
Fig.4 Transient forward voltage vs rate of rise of
forward current
2000
100
10
100
Rate of rise of reverse current dIR/dt - (A/µs)
1000
Fig.5 Recovered charge
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DSF8045SK
1000
0.1
Single side cooled
Thermal impedance - junction to case, Zth(j-c) - (˚C/W)
Conditions:
Tj = 150˚C,
VR = 100V
IF = 2000A
Reverse recovery current Irr - (A)
IF = 1000A
100
10
10
100
Rate of rise of reverse current dIR/dt - (A/µs)
1000
Fig.6 Typical reverse recovery current vs rate of rise of
forward current
Double side
cooled
0.01
0.001
0.001
0.01
0.1
Time - (s)
1
10
Fig.7 Maximum (limit) transient thermal impedance junction to case - (˚C/W)
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DSF8045SK
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 Holes Ø3.6 x 2.0 deep (One in each electrode)
Cathode
Ø42 max
27.0
25.4
Ø25 nom
Ø25 nom
Anode
Nominal weight: 160g
Clamping force: 8kN ±10%
Package outline type code: K
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IMPORTANT INFORMATION:
This publication is provided for information only and not for resale.
The products and information in this publication are intended for use by appropriately trained technical personnel.
Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute
any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of
the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements
are met. Should additional product information be needed please contact Customer Service.
Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical
errors. The information is provided without any warranty or guarantee of any kind.
This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the
most up to date version and has not been superseded.
The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property.
The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or
malfunction.
The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use
protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any
electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves.
Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the
product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include
potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design
and safety precautions should always be followed to protect persons and property.
Product Status & Product Ordering:
We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for
production. The annotations are as follows:Target Information:
Preliminary Information:
No Annotation:
This is the most tentative form of information and represents a very preliminary specification.
No actual design work on the product has been started.
The product design is complete and final characterisation for volume production is in
progress.The datasheet represents the product as it is now understood but details may change.
The product has been approved for production and unless otherwise notified by Dynex any
product ordered will be supplied to the current version of the data sheet prevailing at the
time of our order acknowledgement.
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HEADQUARTERS OPERATIONS
CUSTOMER SERVICE
DYNEX SEMICONDUCTOR LIMITED
Doddington Road, Lincoln, Lincolnshire, LN6 3LF
United Kingdom.
Phone: +44 (0) 1522 500500
Fax:
+44 (0) 1522 500550
Web: http://www.dynexsemi.com
Phone: +44 (0) 1522 502753 / 502901
Fax:
+44 (0) 1522 500020
e-mail: power_solutions@dynexsemi.com
 Dynex Semiconductor Ltd.
Technical Documentation – Not for resale.