- Dynex Semiconductor Ltd.

POWER SEMICONDUCTOR
PRODUCT GUIDE
2015
Dynex Semiconductor has a rich history in the
design, development and production of High
Power Semiconductors and Power Assemblies.
Our products throughoutthe years have been
appliedin projects that vary from Traction,
Power Quality through HVDC, Renewable
Energy production, to helping science advance.
Contents
IGBT Modules 02
1200V IGBT Modules
Choppers, Dual Switches and Single Switches 04
1700V IGBT Modules
Bi-directional Switches, Choppers, Dual Switches,
Half Bridges and Single Switches 04
3300V IGBT Modules
Choppers, Dual Switches, Half Bridges
and Single Switches 4500V IGBT Modules
Choppers, Single Switches 05-06
07
6500V IGBT Modules
Choppers, Single switches 07
FRD Modules
08
1200V FRD Modules
Dual Diodes and Triple Diodes 10
1800V FRD Modules
Dual Diodes and Triple Diodes 10
3300V FRD Modules
Dual Diodes, Triple Diodes and Series Pair Diodes 10
4500V and 6500V FRD Modules
Dual Diodes and Triple Diodes 11
Bipolar Thyristors and Diodes
Phase Control Thyristors
Gate Turn Off Thyristors
14-15
16
Pulsed Power Thyristors
12
17
18-19
Rectifier Diodes
Fast Recovery Diodes
Package Outlines
19
20
IGBT Modules 21-22
FRD Modules 23
Thyristors and Diodes 24
GTO 26
Power Assemblies
28
Overview including Assemblies, AC Switches,
Heatsinks and Sub-contract Partnerships 30-31
Symbols and Definitions 32
1
IGBT
Modules
3
IGBT Modules
IGBT Modules
1200V IGBT Modules
Part
Number
Configuration
3300V IGBT Modules
Production
Status
IC
(A)
at TC
(°C)
VCE (sat)
@
Tc =25°C
(V)
Total E sw
@
Tc =125°C
(mJ)
Rth(j-c)
(per switch)
(°C/kW)
Baseplate
Dims
(mm)
Isolation
Voltage
Tech
AISiC Baseplate
Part
Number
Configuration
Production
Status
IC
(A)
at TC
(°C)
VCE (sat)
@
Tc =25°C
(V)
Total E sw
@
Tc =125°C
(mJ)
Rth(j-c)
(per switch)
(°C/kW)
Baseplate
Dims
(mm)
Isolation
Voltage
Tech
d2 TS Range (standard)
DIM2400ESM12-A
Single
MP
2400
85
2.2
800
6
190 x 140
2.5 kV
DNPT
DIM1500ESM33-TS
Single
MP
1500
110
2.2
5750
8
190 x 140
6 kV
d2
DIM1800ESM12-A
Single
MP
1800
85
2.2
570
8
190 x 140
2.5 kV
DNPT
DIM1500ASM33-TS001
Single
MP
1500
110
2.2
5750
8
190 x 140
10.2 kV
d2
DIM1600FSM12-A
Single
MP
1600
85
2.2
500
9
140 x 130
2.5 kV
DNPT
DIM1000NSM33-TS
Single
MP
1000
110
2.2
3900
12
140 x 130
6 kV
d2
DIM1200FSM12-A
Single
MP
1200
85
2.2
400
12
140 x 130
2.5 kV
DNPT
DIM1000XSM33-TS001
Single
MP
1000
110
2.2
3900
12
140 x 130
10.2 kV
d2
DIM800FSM12-A
Single
MP
800
85
2.2
280
18
140 x 130
2.5 kV
DNPT
DIM500GDM33-TS
Dual
MP
500
110
2.2
1950
24
140 x 130
6 kV
d2
DIM800DDM12-A
Dual
MP
800
85
2.2
280
18
140 x 130
2.5 kV
DNPT
DIM1000ECM33-TS
Chopper
MP
1000
110
2.2
3900
12
190 x 140
6 kV
d2
DIM600DDM12-A
Dual
MP
600
85
2.2
200
24
140 x 130
2.5 kV
DNPT
DIM1000ACM33-TS001
Chopper
MP
1000
110
2.2
4150
12
190 x 140
10.2 kV
d2
DIM400DDM12-A
Dual
MP
400
85
2.2
120
36
140 x 130
2.5 kV
DNPT
DIM500GCM33-TS
Chopper
MP
500
110
2.2
1950
24
140 x 130
6 kV
d2
DIM800DCM12-A
Chopper
MP
800
85
2.2
280
18
140 x 130
2.5 kV
DNPT
DIM250PKM33-TS
Chopper
MP
250
110
2.2
960
48
140 x 73
6 kV
d2
DIM250PLM33-TS
Chopper
MP
250
110
2.2
960
48
140 x 73
6 kV
d2
Half Bridge
MP
250
110
2.2
960
48
140 x 73
6 kV
d2
Copper Baseplate
DIM2400ESS12-A
Single
MP
2400
85
2.2
800
6
190 x 140
2.5 kV
DNPT
DIM250PHM33-TS
DIM1800ESS12-A
Single
MP
1800
85
2.2
570
8
190 x 140
2.5 kV
DNPT
d2 TL Range (low loss)
DIM1600FSS12-A
Single
MP
1600
85
2.2
500
9
140 x 130
2.5 kV
DNPT
DIM1500ESM33-TL
Single
NEW
1500
115
2.0
7150
8
190 x 140
6 kV
d2
DIM1200FSS12-A
Single
MP
1200
85
2.2
400
12
140 x 130
2.5 kV
DNPT
DIM1500ASM33-TL001
Single
NEW
1500
115
2.0
7150
8
190 x 140
10.2 kV
d2
DIM800FSS12-A
Single
MP
800
85
2.2
280
18
140 x 130
2.5 kV
DNPT
DIM1000NSM33-TL
Single
NEW
1000
115
2.0
4750
12
140 x 130
6 kV
d2
Single
NEW
1000
115
2.0
4750
12
140 x 130
10.2 kV
d2
DIM800DDS12-A
Dual
MP
800
85
2.2
280
18
140 x 130
2.5 kV
DNPT
DIM1000XSM33-TL001
DIM600DDS12-A
Dual
MP
600
85
2.2
200
24
140 x 130
2.5 kV
DNPT
DIM500GDM33-TL
Dual
NEW
500
115
2.0
2400
24
140 x 130
6 kV
d2
DIM400DDS12-A
Dual
MP
400
85
2.2
120
36
140 x 130
2.5 kV
DNPT
DIM1000ECM33-TL
Chopper
NEW
1000
115
2.0
4750
12
190 x 140
6 kV
d2
DIM800DCS12-A
Chopper
MP
800
85
2.2
280
18
140 x 130
2.5 kV
DNPT
DIM1000ACM33-TL001
Chopper
NEW
1000
115
2.0
4750
12
190 x 140
10.2 kV
d2
DIM500GCM33-TL
Chopper
NEW
500
115
2.0
2400
24
140 x 130
6 kV
d2
DIM250PKM33-TL
Chopper
NEW
250
115
2.0
1200
48
140 x 73
6 kV
d2
DIM250PLM33-TL
Chopper
NEW
250
115
2.0
1200
48
140 x 73
6 kV
d2
DIM250PHM33-TL
Half Bridge
NEW
250
115
2.0
1200
48
140 x 73
6 kV
d2
1700V IGBT Modules
Part
Number
Configuration
Production
Status
IC
(A)
at TC
(°C)
VCE (sat) @
Tc =25°C
(V)
Total E sw
@
Tc =125°C
(mJ)
Rth(j-c)
(per switch)
(°C/kW)
DIM2400ESM17-A
Single
MP
2400
75
2.7
1950
DIM1600FSM17-A
Single
MP
1600
75
2.7
1250
DIM1200FSM17-A
Single
MP
1200
75
2.7
1000
12
140 x 130
4 kV
DNPT
DIM800FSM17-A
Single
MP
800
75
2.7
700
18
140 x 130
4 kV
DNPT
Baseplate
Dims
(mm)
Isolation
Voltage
Tech
6
190 x 140
4 kV
DNPT
9
140 x 130
4 kV
DNPT
DNPT Range
DIM800DDM17-A
Dual
MP
800
75
2.7
700
18
140 x 130
4 kV
DNPT
DIM600DDM17-A
Dual
MP
600
75
2.7
620
24
140 x 130
4 kV
DNPT
DIM400DDM17-A
Dual
MP
400
75
2.7
350
36
140 x 130
4 kV
DNPT
DIM1600ECM17-A
Chopper
MP
1600
75
2.7
1250
9
190 x 140
4 kV
DNPT
DIM800DCM17-A
Chopper
MP
800
75
2.7
785
18
140 x 130
4 kV
DNPT
DIM600DCM17-A
Chopper
MP
600
75
2.7
620
24
140 x 130
4 kV
DNPT
DIM400DCM17-A
Chopper
MP
400
75
2.7
350
36
140 x 130
4 kV
DNPT
DIM400PHM17-A
Half Bridge
MP
400
75
2.7
350
36
140 x 73
4 kV
DNPT
DIM400PBM17-A
Bi-directional
MP
400
75
4.9*
350
36
140 x 73
4 kV
DNPT
* Vce(sat) is measured across both arms of the bi-directional switch.
MP: Mass Production NEW: New Products NRND: Not Recommended for New Design
4
For further information and datasheets visit www.dynexsemi.com
5
IGBT Modules
IGBT Modules
3300V IGBT Modules
Part
Number
Configuration
4500V IGBT Modules
Production
Status
IC
(A)
at TC
(°C)
VCE (sat)
@
Tc =25°C
(V)
Total E sw
@
Tc =125°C
(mJ)
Rth(j-c)
(per switch)
(°C/kW)
Baseplate
Dims
(mm)
Isolation
Voltage
Tech
DSPT Range
Part
Number
Configuration
Production
Status
IC
(A)
at TC
(°C)
VCE (sat)
@
Tc =25°C
(V)
Total E sw
@
Tc =125°C
(mJ)
Rth(j-c)
(per switch)
(°C/kW)
Baseplate
Dims
(mm)
Isolation
Voltage
Tech
d2 TS Range (standard)
DIM1200ESM33-F
Single Switch
MP
1200
90
2.8
4400
8
190 x 140
6 kV
DSPT
DIM1200ASM45-TS
Single
NEW
1200
90
2.7
12000
8
190 x 140
7.4 kV
d2
DIM800NSM33-F
Single Switch
MP
800
90
2.8
2950
12
140 x 130
6 kV
DSPT
DIM1200ASM45-TS001
Single
NEW
1200
90
2.7
12000
8
190 x 140
10.2 kV
d2
DIM800XSM33-F
Single Switch
MP
800
90
2.8
2950
12
140 x 130
10.2 kV
DSPT
DIM1200ASM45-TL000
Single
NEW
1200
90
2.3
11650
8
190 x 140
7.4 kV
d2
DIM400NSM33-F
Single Switch
MP
400
90
2.8
1470
24
140 x 130
6 kV
DSPT
DIM800XSM45-TS
Single
NEW
800
90
2.7
7400
12
140 x 130
7.4 kV
d2
DIM400GDM33-F
Dual Switch
MP
400
90
2.8
1470
24
140 x 130
6 kV
DSPT
DIM800XSM45-TS001
Single
NEW
800
90
2.7
7400
12
140 x 130
10.2 kV
d2
DIM800ECM33-F
Chopper
MP
800
90
2.8
2950
12
190 x 140
6 kV
DSPT
DIM400XCM45-TS
Chopper
NEW
400
90
2.7
3800
24
140 x 130
7.4 kV
d2
DIM400GCM33-F
Chopper
MP
400
90
2.8
1470
24
140 x 130
6 kV
DSPT
DIM400XCM45-TS001
Chopper
NEW
400
90
2.7
3800
24
140 x 130
10.2 kV
d2
DIM400XCM33-F
Chopper
MP
400
90
2.8
1470
24
140 x 130
10.2 kV
DSPT
DIM400XSM45-TS
Single
NEW
400
90
2.7
3800
24
140 x 130
7.4 kV
d2
DIM200PLM33-F
Chopper
MP
200
90
2.8
655
48
140 x 73
6 kV
DSPT
DIM400XSM45-TS001
Single
NEW
400
90
2.7
3800
24
140 x 130
10.2 kV
d2
DIM200PKM33-F
Chopper
MP
200
90
2.8
655
48
140 x 73
6 kV
DSPT
d2 TL Range (low loss)
DIM200PHM33-F
Half Bridge
MP
200
90
2.8
655
48
140 x 73
6 kV
DSPT
DIM1200ASM45-TL
Single
NEW
1200
90
2.3
13650
8
190 x 140
7.4 kV
d2
DIM100PHM33-F
Half Bridge
MP
100
90
2.8
335
96
140 x 73
6 kV
DSPT
DIM1200ASM45-TL001
Single
NEW
1200
90
2.3
13650
8
190 x 140
10.2 kV
d2
DIM800XSM45-TL
Single
NEW
800
90
2.3
9100
12
140 x 130
7.4 kV
d2
DIM800XSM45-TL001
Single
NEW
800
90
2.3
9100
12
140 x 130
10.2 kV
d2
Configuration
Production
Status
IC
(A)
at TC
(°C)
VCE (sat)
@
Tc =25°C
(V)
Total E sw
@
Tc =125°C
(mJ)
Rth(j-c)
(per switch)
(°C/kW)
Baseplate
Dims
(mm)
Isolation
Voltage
Tech
DIM750ASM65-TS
Single
NEW
750
90
3.0
10300
8
190 x 140
10.2 kV
d2
DIM500XSM65-TS
Single
NEW
500
90
3.0
7000
12
140 x 130
10.2 kV
d2
DIM500ACM65-TS
Chopper
NEW
500
90
3.0
7000
12
190 x 140
10.2 kV
d2
DIM250XCM65-TS
Chopper
NEW
250
90
3.0
3500
24
140 x 130
10.2 kV
d2
6500V IGBT Modules
Part
Number
d2 Range
6
For further information and datasheets visit www.dynexsemi.com
7
FRD
Modules
9
FRD Modules for use with IGBT modules
FRD Modules
1200V FRD Modules
Part
Number
Configuration
4500V FRD Modules
Production
Status
at TC
(°C)
IF
(A per
arm)
Baseplate
Dims (mm)
Isolation
Voltage
IF
(A as single
diode with
external
connection)
[email protected] Tvj
=25 ºC
2
I t
(kA 2 s)
[email protected] Tvj
[email protected] Tvj
Rth(j-c)
(per arm)
(°C/kW)
AISiC Baseplate
Part
Number
Configuration
Production
IF
(A per
Status
arm)
at TC
(°C)
Baseplate
Dims (mm)
Isolation
Voltage
IF
(A as single
diode with
external
connection)
[email protected] Tvj
=25 ºC
I2 t
(kA 2 s)
[email protected] Tvj
[email protected] Tvj
Rth(j-c)
(per arm)
(°C/kW)
TS Range
DFM1200EXM12-A
Triple Diode
MP
1200
75
190 x 140
2.5 kV
3600
1.9
200
300
140
20
DFM1200AXM45-TS
Triple Diode
NEW
1200
65
190 x 140
7.4 kV
3600
2.8
460
2200
4000
16
DFM1200FXM12-A
Dual Diode
MP
1200
75
140 x 130
2.5 kV
2400
1.9
200
300
140
20
DFM1200AXM45-TS001
Triple Diode
NEW
1200
65
190 x 140
10.2 kV
3600
2.8
460
2200
4000
16
DFM900FXM12-A
Dual Diode
MP
900
75
140 x 130
2.5 kV
1800
1.9
150
225
105
27
DFM1200XXM45-TS
Dual Diode
NEW
1200
65
140 x 130
7.4 kV
2400
2.8
460
2200
4000
16
DFM600FXM12-A
Dual Diode
MP
600
75
140 x 130
2.5 kV
1200
1.9
100
150
70
40
Copper Baseplate
DFM1200EXS12-A
Triple Diode
MP
1200
75
190 x 140
2.5 kV
3600
1.9
200
300
140
DFM1200XXM45-TS001
Dual Diode
NEW
1200
65
140 x 130
10.2 kV
2400
2.8
460
2200
4000
16
DFM800XXM45-TS
Dual Diode
NEW
800
65
140 x 130
7.4 kV
1600
2.8
300
1450
2700
24
20
DFM800XXM45-TS001
Dual Diode
NEW
800
65
140 x 130
10.2 kV
1600
2.8
300
1450
2700
24
Dual Diode
NEW
400
65
140 x 130
7.4 kV
800
2.8
150
750
1350
48
Dual Diode
NEW
400
65
140 x 130
10.2 kV
800
2.8
150
750
1350
48
DFM900NXM45-F000
Dual Diode
NRND
900
80
140 x 130
6kV
1800
3.0
432
1300
1600
16
DFM600NXM45-F000
Dual Diode
NRND
600
80
140 x 130
6kV
1200
3.0
192
850
1050
24
DFM1200FXS12-A
Dual Diode
MP
1200
75
140 x 130
2.5 kV
2400
1.9
200
300
140
20
DFM400XXM45-TS
DFM900FXS12-A
Dual Diode
MP
900
75
140 x 130
2.5 kV
1800
1.9
150
225
105
27
DFM400XXM45-TS001
DFM600FXS12-A
Dual Diode
MP
600
75
140 x 130
2.5 kV
1200
1.9
100
150
70
40
F Range
1800V FRD Modules
Part
Number
Configuration
Production
Status
IF
(A per
arm)
at TC
(°C)
Baseplate
Dims (mm)
Isolation
Voltage
IF
(A as single
diode with
external
connection)
[email protected] Tvj
=25 ºC
I2 t
(kA 2 s)
[email protected] Tvj
[email protected] Tvj
Rth(j-c)
(per arm)
(°C/kW)
DFM1200EXM18-A
Triple Diode
MP
1200
75
190 x 140
4 kV
3600
2.0
480
540
360
20
DFM1200FXM18-A
Dual Diode
MP
1200
75
140 x 130
4 kV
2400
2.0
480
540
360
20
DFM900FXM18-A
Dual Diode
MP
900
75
140 x 130
4 kV
1800
2.0
270
410
270
27
DFM600FXM18-A
Dual Diode
MP
600
75
140 x 130
4 kV
1200
2.0
120
160
120
40
3300V FRD Modules
Configuration
Production
Status
IF
(A per
arm)
at TC
(°C)
Baseplate Isolation
Dims (mm) Voltage
Dual Diode
NRND
600
80
140 x 130
10.2kV
1200
3.0
192
850
1050
24
Dual Diode
NRND
450
80
140 x 130
6kV
900
3.0
108
650
800
32
Configuration Production
IF
(A per
Status
arm)
at TC
(°C)
6500V FRD Modules
AISiC Baseplate
Part
Number
DFM600XXM45-F000
DFM450NXM45-F000
IF
(A as single
diode with
external
connection)
[email protected] Tvj
=25 ºC
I2 t
(kA 2 s)
[email protected] Tvj [email protected] Tvj
Rth(j-c)
(per arm)
(°C/kW)
Part
Number
Baseplate Isolation
Dims (mm) Voltage
IF
(A as single
diode with
external
connection)
[email protected] Tvj
=25 ºC
[email protected] Tvj [email protected] Tvj
I2 t
Rth(j-c)
(kA 2s)
(per arm)
(°C/kW)
TS Range
DFM750AXM65-TS
Triple Diode
NEW
750
70
190 x 140
10.2 kV
2250
3.8
218
1500
3000
20
DFM500XXM65-TS
Dual Diode
NEW
500
70
140 x 130
10.2 kV
1000
3.8
97
1000
2000
30
DFM250XXM65-TS
Dual Diode
NEW
250
70
140 x 130
10.2 kV
500
3.8
24
500
1000
60
TS Range
DFM1000EXM33-TS
Triple Diode
MP
1000
90
190 x 140
6 kV
3000
2.4
320
1070
1300
24
DFM1000NXM33-TS
Dual Diode
MP
1000
90
140 x 130
6 kV
2000
2.4
320
1070
1300
24
DFM500NXM33-TS
Dual Diode
MP
500
90
140 x 130
6 kV
1000
2.4
80
540
650
48
DFM250PXM33-TS
Series Pair
MP
250
90
140 x 73
6 kV
N/A
2.4
20
270
330
96
DFM1200NXM33-F
Dual Diode
MP
1200
70
140 x 130
6 kV
2400
2.9
720
900
900
16
DFM800NXM33-F
Dual Diode
MP
800
70
140 x 130
6 kV
1600
2.9
320
600
600
24
DFM400NXM33-F
Dual Diode
MP
400
70
140 x 130
6 kV
800
2.9
80
300
300
48
DFM400PXM33-F
Series Diode Pair
MP
400
70
140 x 73
6 kV
N/A
2.9
80
300
300
48
DFM200PXM33-F
Series Diode Pair
MP
200
70
140 x 73
6 kV
N/A
2.9
20
125
130
96
DFM100PXM33-F
Series Diode Pair
MP
100
70
140 x 73
6 kV
N/A
2.9
5
65
65
192
F Range (fast)
10
For further information and datasheets visit www.dynexsemi.com
11
Bipolar
Thyristors
and Diodes
13
Phase Control Thyristors
Part
Number
Phase Control Thyristors
Outline Type
Flange OD
Code
Contact OD Height
(mm)
Clamping
Force (kN)
min - max
Part
Number
VDRM (V)
VRRM (V)
IT (AV) at
TC = 60°C
(A)
ITSM at
Tvj VR = 0
(kA)
dV/dt
(V/µs)
Non Rep.
dI/dt (A/µs)
Rth(j-c)
(°C/W)
DCR470T14
1400
1400
470
6.3
1000
1000
0.08
T
42/19/13.5
4-6
DCR780G42
4200
DCR780E14
1400
1400
780
9.1
1000
1000
0.041
E
42/25/14.5
4-6
DCR1150N42
4200
Up to 1400V
VDRM (V)
IT (AV) at
TC = 60°C
(A)
ITSM at
Tvj VR = 0
(kA)
4200
780
10.5
4200
1150
16.8
VRRM (V)
dV/dt
(V/µs)
Non Rep.
dI/dt (A/µs)
Rth(j-c)
(°C/W)
Outline Type
Code
Flange OD
Contact OD Height
(mm)
1500
400
1500
1000
Clamping
Force (kN)
min - max
0.0268
G
58.5/34/26.72
10-13
0.0221
N
73/47/34.89
20-25
20-25
Up to 4200V
DCR950D14
1400
1400
950
12.8
1000
1000
0.035
D
47/29/14.5
8-12
DCR1260F42
4200
4200
1255
16.8
1500
1000
0.0184
F
73/47/26.72
DCR1010G14
1400
1400
1010
15
1000
1000
0.035
G
58/35/26.5
12-18
DCR2040L42
4200
4200
2040
29
1500
400
0.0117
L
98.9/62.85/34.82
33-41
DCR1910F14
1400
1400
1910
26
1000
1000
0.02
F
75/47/26.5
18-26
DCR2150C42
4200
4200
2150
29
1500
400
0.0101
C
98.9/62.9/26.76
33-41
DCR2150X14
1400
1400
2150
29
1000
1000
0.018
X
85/53/26.5
26-34
DCR2930Y42
4200
4200
2930
40.6
1500
400
0.00835
Y
112.5/73/35.35
48-59
DCR2980C14
1400
1400
2980
47
1000
1000
0.0125
C
100/63/26.5
40-50
DCR3030V42
4200
4200
3030
40.6
1500
400
0.00746
V
110/73/27.57
48-59
DCR3710V14
1400
1400
3710
60
1000
1000
0.01
V
110/73/26.5
50-62
DCR3790B42
4200
4200
3790
53.5
1500
400
0.007
B
120/84.6/34.87
68-84
DCR4100W42
4200
4200
3880
53.5
1500
400
0.00631
W
120/84.6/27.57
68-84
DCR4500A42
4200
4200
4500
60.8
2000
500
0.00603
A
148/100/35.47
74-91
DCR4880M42
4200
4200
4880
60.8
2000
500
0.00518
M
148/100/26.12
74-91
DCR6140H42
4200
4200
6138
90.91
2000
500
0.004255
H
172/115/35.15
120-155
DCR6650H42
4200
4200
6650
98.56
2000
500
0.004255
H
172/115/35.15
120-155
Up to 1800V
DCR370T18
1800
1800
370
5
1000
1000
0.08
T
42/19/13.5
4-6
DCR720E18
1800
1800
720
8.3
1000
1000
0.041
E
42/25/14.5
4-6
DCR860D18
1800
1800
860
11.5
1000
1000
0.035
D
47/29/14.5
8-12
DCR960G18
1800
1800
960
14
1000
1000
0.035
G
58/35/26.5
12-18
Up to 5200V
DCR1710F18
1800
1800
1710
25
1000
1000
0.02
F
75/47/26.5
18-26
DCR1800F18
1800
1800
1800
32
1000
1000
0.02
F
75/47/26.5
18-26
DCR690G52
5200
5200
690
9.45
1500
300
0.0268
G
58.5/34/26.84
10-13
DCR1970X18
1800
1800
1970
28
1000
1000
0.018
X
85/53/26.5
26-34
DCR1020N52
5200
5200
1018
14.8
1500
800
0.0221
N
73/47/34.89
20-25
DCR2830C18
1800
1800
2830
45
1000
1000
0.0125
C
100/63/26.5
40-50
DCR1110F52
5200
5200
1107
14.8
1500
800
0.0184
F
73/47/26.84
20-25
DCR3400V18
1800
1800
3400
60
1000
1000
0.01
V
110/73/26.5
50-62
DCR1850L52
5200
5200
1845
26.25
1500
300
0.0117
L
98.9/62.85/34.94
33-41
DCR1950C52
5200
5200
1950
26.25
1500
300
0.0101
C
98.9/62.9/26.84
33-41
DCR2630Y52
5200
5200
2630
36.7
1500
300
0.00835
Y
112.5/73/35.47
48-59
Up to 2400V
DCR4440W22
2200
2200
4440
64.5
1000
1000
0.007
W
120/84/26.5
62-78
DCR5900A22
2200
2200
5900
80
1000
1000
0.0057
A
150/100/35
74-91
DCR6430M22
2200
2200
6430
80
1000
1000
0.005
M
150/100/26.5
80-100
DCR590E24
2400
2400
590
7.8
1000
1000
0.041
E
42/25/14.5
4-6
DCR750D24
2400
2400
750
10
1000
1000
0.035
D
47/29/14.5
8-12
DCR1700X24
2400
2400
1700
23
1000
1000
0.018
X
85/53/26.5
26-34
DCR2360C24
2400
2400
2360
35
1000
1000
0.0125
C
100/63/26.5
40-50
DCR3060V24
2400
2400
3060
45
1000
1000
0.01
V
110/73/26.5
50-62
5200
5200
2720
36.7
1500
300
0.00746
V
110/73/27.69
48-59
5200
5200
3480
49
1500
400
0.007
B
120/84.6/34.99
68-84
DCR3640W52
5200
5200
3550
49
1500
400
0.00631
W
120/84.6/27.69
68-84
DCR3990A52
5200
5200
3990
53.4
2000
1000
0.00603
A
148/100/35.61
74-91
DCR4330M52
5200
5200
4325
53.4
2000
1000
0.00518
M
148/100/26.26
74-91
DCR5240H52
5200
5200
5240
77.8
2000
500
0.004255
H
170/115/35.27
120-150
DCR5890H52
5200
5200
5890
86.97
2000
500
0.004255
H
170/115/35.27
120-150
10-13
Up to 6500V
Up to 3000V
DCR850G26
2600
2600
850
11
1000
1000
0.035
G
58/35/26.5
12-18
DCR1560F26
2600
2600
1560
24
1000
1000
0.02
F
75/47/26.5
18-26
DCR7610H28
2800
2800
7610
105
1000
1000
0.004
H
172/110/35
110-130
DCR2060C28
2800
2800
2060
30
1000
1000
0.0125
C
100/63/26.5
40-50
DCR2760V28
2800
2800
2760
43
1000
1000
0.01
V
110/73/26.5
50-62
DCR4590B28
2800
2800
4590
65
2000
500
0.007
B
120/84.6/34.87
68-84
DCR4910W28
2800
2800
4910
65
2000
500
0.00631
W
120/84/26.5
68-84
DCR5320A28
2800
2800
5320
75
1000
1000
0.0057
A
150/100/35
80-100
DCR5900A28
2800
2800
5900
79
2000
250
0.00603
A
150/100/35
80-100
DCR5790M28
2800
2800
5790
75
1000
1000
0.005
M
150/100/26.5
80-100
DCR780G30
3000
3000
780
10.5
1000
1000
0.035
G
58/35/26.5
12-18
DCR1460F30
3000
3000
1460
23
1000
1000
0.02
F
75/47/26.5
18-26
DCR470E34
3400
3400
470
6.3
1000
1000
0.041
E
42/25/14.5
4-6
DCR610D34
3400
3400
610
8
1000
1000
0.035
D
47/29/14.5
8-12
Up to 3400V
DCR650G34
3400
3400
650
8.4
1000
1000
0.035
G
58/35/26.5
12-18
DCR1120F34
3400
3400
1120
17
1000
1000
0.02
F
75/47/26.5
18-26
DCR1430X34
3400
3400
1430
19.2
1000
1000
0.018
X
85/53/26.5
26-34
DCR1970C34
3400
3400
1970
30
1000
1000
0.0125
C
100/63/26.5
40-50
DCR2440V34
3400
3400
2440
33
1000
1000
0.01
V
110/73/26.5
50-62
DCR3640W34
3400
3400
3640
54
1000
1000
0.007
W
120/84/26.5
68-84
DCR4720A34
3400
3400
4720
69
1000
1000
0.057
A
150/100/35
80-100
DCR5110M34
3400
3400
5110
69
1000
1000
0.005
M
150/100/26.5
80-100
14
DCR2720V52
DCR3480B52
DCR490J65
6500
6500
490
6.6
1500
200
0.0379
J
57/33.95/35.15
DCR590G65
6500
6500
595
6.6
1500
200
0.0268
G
58.5/34/27.1
10-13
DCR820N65
6500
6500
820
12
1500
200
0.0221
N
73/47/35.15
20-25
DCR890F65
6500
6500
894
12
1500
200
0.0184
F
73/47/27.1
20-25
DCR1570L65
6500
6500
1568
22
1500
300
0.0117
L
98.9/62.85/35.2
33-41
DCR1650C65
6500
6500
1650
22
1500
300
0.0101
C
98.9/62.9/27.1
33-41
DCR2220Y65
6500
6500
2220
30
1500
300
0.00835
Y
112.5/73/35.73
48-59
DCR2290V65
6500
6500
2290
30
1500
500
0.0074
V
110/73/27.95
48-59
DCR2880B65
6500
6500
2845
38.5
1500
300
0.007
B
120/84.6/35.25
68-84
DCR2950W65
6500
6500
2945
38.5
1500
300
0.00631
W
120/84.6/27.95
68-84
DCR3220A65
6500
6500
3220
44.2
2000
500
0.00603
A
148/100/35.85
74-91
DCR4420H65
6500
6500
4420
65.6
2000
500
0.00423
H
170/115/35
120-150
DCR4660H65
6500
6500
4660
69.3
2000
500
0.00423
H
170/115/35
120-150
DCR390J85
8500
8500
387
5.25
1500
200
0.0379
J
57/33.95/35.51
10-13
DCR470G85
8500
8500
467
5.25
1500
200
0.0268
G
58.5/34/27.46
10-13
Up to 8500V
DCR680N85
8500
8500
677
9.8
1500
200
0.0221
N
73/47/35.51
20-25
DCR750F85
8500
8500
733
9.8
1500
200
0.0184
F
73/47/27.46
20-25
DCR1300L85
8500
8500
1300
17.6
1500
400
0.0117
L
98.9/62.85/35.56
33-41
DCR1840Y85
8500
8500
1840
25
1500
300
0.00835
Y
112.5/73/36.09
48-59
DCR1910V85
8500
8500
1910
25
1500
300
0.00746
V
110/73/28.31
48-59
DCR2400B85
8500
8500
2370
32.5
1500
300
0.007
B
120/84.6/35.61
68-84
DCR2450W85
8500
8500
2450
32.5
1500
300
0.00631
W
120/84.6/27.95
68-84
DCR2560A85
8500
8500
2560
32.5
1500
200
0.00603
A
148/100/36.19
74-91
DCR2760M85
8500
8500
2765
32.5
1500
200
0.00518
A
148/100/26.0
74-91
DCR3640H85
8500
8500
3640
54
2000
500
0.00425
H
170/115/35
120-150
DCR3980H85
8500
8500
3980
59.6
2000
500
0.00425
H
170/115/35
120-150
For further information and datasheets visit www.dynexsemi.com
15
Gate Turn Off Thyristors
Part
Number
VDRM
(V)
VRRM
(V
IT (AV) at
TC = 80°C
(A)
ITCM
(A)
dV/dt
(V/µs)
dI/dt
(A/µs)
Pulsed Power Thyristors
Rth(j-c)
(°C/W)
Outline
Type
Code
Flange OD
Contact OD
Height (mm)
Snubber
Diode
Anti-parallel
and Freewheel
Diode
Clamping
Force (kN)
min - max
Part
Number
VDRM
(V)
VDRM
(V)
IT (AV) at
TC = 80°C
(A)
ITSM at
Tvj VR = 0
(kA)
dV/dt
(V/µs)
dI/dt
(A/µs)
to Ipk
(kA)
Rth(j-c)
(°C/W)
Outline
Type
Code
Flange OD
Contact OD Height
(mm)
Clamping
Force (kN)
min - max
493
6.5
3000
2000
0.125
0.042
G
58.5/34/27
6-8
Asymmetric
Types
Pulsed Power
Thyristors (SCR)
Up to 1300V
ACR300SG33
3300
20
PT40QPx45
4500
16
760
13
200
5000
20
0.033
P
56/38/37
11-15
PT60QHx45
4500
16
1000
22.5
175
10000
40
0.013
H
100/63/26.5
18-22
PT85QWx45
4500
16
1670
37
200
22000
90
0.01
W
120/84.6/27.7
36-44
DGT304SE
1300
16
250
700
500
500
0.075
E
41.9/25/15
-
DF451
5-6
Up to 1800V
DGT305SE
1800
16
240
700
500
500
0.075
E
41.9/25/15
-
DF451
5-6
Note: 1. Please contact customer services for the availability of clamps for these devices.
Up to 2500V
DG306AE
2500
16
225
600
1000
300
0.075
E
41.9/25/15
-
DFS454
5-6
DG406BP
2500
16
500
1200
1000
300
0.041
P
56/38/27
DSF8025SE
DSF8025SE
11-15
DG646BH
2500
16
867
2500
1000
300
0.018
H
100/63/26.5
DSF8025SE
DF051
18-22
DG408BP
4500
16
320
1000
1000
300
0.041
P
56/38/27
DSF8045SK
DSF8045SK
11-15
DG648BH
4500
16
745
2000
1000
300
0.018
H
100/63/26.5
DSF8045SK
DSF20545SF
18-22
DG758BX
4500
16
870
3000
1000
300
0.0146
X
112/66/27
DSF8045SK
DSF21545SV
33-37
DG808BC
4500
16
780
3000
1000
400
0.014
C
108/77.2/27
DSF8045SK
DSF21545SV
28-44
DG858BW
4500
16
1180
4000
1000
300
0.011
W
120/84.6/27.7
DSF8045SK
DSF21545SV
36-44
DG858DW
4500
16
1100
3000
750
300
0.011
W
120/84.6/27.7
DSF8045SK
DSF21545SV
36-44
Up to 4500V
Reverse
Blocking
Up to 1300V
DGT304RE
1300
1300
250
700
500
500
0.075
E
41.9/25/15
-
DF451
5-6
1800
1800
240
700
500
500
0.075
E
41.9/25/15
-
DF451
5-6
Up to 1800V
DGT305RE
The PT family of Pulsed Power Thyristors (PPTs) is based on
Dynex’s GTO technology and is designed for long term stability
under DC voltages. The structures are resistant to cosmic ray
induced failures at normal working voltages. Dynex’s Pulsed
Power Thyristors may be used to connect a source of stored
energy, such as a capacitor, to a load, or to bypass and protect
the load in the case of a crowbar circuit. In these pulsed power
applications where the rate of rise of current is very fast, the
pulsed power switch is acting as a closing switch and ordinary
phase control thyristors (SCRs) are likely to fail due to the high
di/dt experienced.
Pulsed Power Thyristors may also be required to act in the
opening switch mode. Such applications may include those
where voltage is reapplied to the pulsed power switch shortly
after closing and the switch needs to have recovered blocking
capability or the transferred energy needs to be controlled. In
these applications, the switch needs to have turn-off capability
to reduce the natural turn-off time (tq) of the device. The device
is operated in GTO mode with the appropriate commutating gate
drive. Dynex has been supplying thyristors used as crowbars
to protect other high power circuitry in railway propulsion
units and the like for many years. In addition, Dynex has been
a supplier of devices used in equipment for the sterilisation
of foods by intense light or x-rays since the late 1980s. These
applications operate at moderate di/dts and can be satisfied with
conventional thyristor solutions.
In the field of ignitron replacements and weld switches, Dynex
has been a world leader in the application of solid state devices.
Dynex has been involved in the design and manufacture of
assemblies for the pulsed power communities on the West
Coast of America and at CERN, Switzerland.
Thyristor Components
Take a look at the components that make up our
encapsulated device. The devices are fully floating and
therefore are not bonded together and are clamped
together to achieve electrical and thermal contact instead.
This allows our products to have an excellent temperature
cycling life expectancy.
Housing lid
Molybdenum washer
Thyristor insulation
Thyristor unit
Device housing
Molybdenum disc
PTFE locator ring
Housing lid
For more information on how Dynex can help with your pulsed
power needs, please e-mail us at [email protected]
16
For further information and datasheets visit www.dynexsemi.com
17
Rectifier Diodes
Rectifier Diodes
VRRM
(V)
IF (AV) at
TC = 100°
(A)
IFSM at Tvj
VR=0 (kA)
I2 t at Tvj VR
= 0 (MA 2 s)
Rth(j-c)
(°C/W)
IFM (A)
[email protected] IFM &
Tc = 25ºC (V)
Outline
Type
Code
Flange OD
Contact OD
Height (mm)
Clamping
Force (kN)
min - max
DRD520T14
1400
520
5.9
0.17
0.08
800
1.45
T
42/19/13.5
4-6
DRD3770A52
DRD1360D14
1400
1360
15.2
1.16
0.035
1500
1.3
D
47/29/14.5
8-12
Up to 5500V
DRD1510G14
1400
1510
16.8
1.41
0.035
1500
1.2
G
58/34/26.5
12-18
DRD5940H55
DRD2770F14
1400
2770
31
4.81
0.02
1500
1.05
F
75/47/26.5
18-26
DRD3220X14
1400
3220
35.8
6.41
0.018
3000
1.15
X
85/53/26.5
26-34
DRD4650C14
1400
4650
45
10.13
0.0125
3000
1.05
C
100/63/26.5
40-50
DRD6080V14
1400
6080
60
18.00
0.01
3000
1.05
V
110/73/26.5
50-62
DRD410T22
2200
410
4.9
0.12
0.08
800
1.85
T
42/19/13.5
4-6
DRD990D22
2200
990
12.5
0.78
0.035
1500
1.60
D
47/29/14.5
8-12
DRD1100G22
2200
1100
13.9
0.966
0.035
1500
1.45
G
58/34/26.5
12-18
DRD2030F22
2200
2030
25.7
3.30
0.02
1500
1.20
F
75/47/26.5
18-26
Up to 8500V
DRD2360X22
2200
2360
29.8
4.44
0.018
3000
1.35
X
85/53/26.5
26-34
DRD4690H85
DRD3430C22
2200
3430
42.2
8.9
0.0125
3000
1.20
C
100/63/26.5
40-50
Up to 9000V
DRD4460V22
2200
4460
56.4
15.90
0.01
3000
1.15
V
110/73/26.5
50-62
DRD560G90
DRD6380W22
2200
6380
78
30.42
0.007
6000
1.09
W
120/84/26.5
62-78
Part
Number
VRRM
(V)
IF (AV) at
TC = 100°
(A)
IFSM at Tvj
VR=0 (kA)
I2 t at Tvj VR
= 0 (MA 2 s)
Rth(j-c)
(°C/W)
IFM (A)
V[email protected] IFM &
Tc = 25ºC (V)
Outline
Type
Code
Flange OD
Contact OD
Height (mm)
Clamping
Force (kN)
min - max
5200
3768
70
24.50
0.0065
3000
1.17
A
148/100 /35.0
75-91
5500
5940
93.60
43.8
0.004
6000
1.26
H
172/110/36
100-130
DRD630G60
6000
630
10.5
0.555
0.032
1800
2.1
G
58.5/34/27
11.5-13.5
DRD1010F60
6000
1015
16.5
1.425
0.022
3400
2.1
F
73/47/27
18-22
6500
5150
82.5
34
0.004
6000
1.65
H
172/110/36
100-130
7200
4950
79
31.2
0.004
6000
1.71
H
172/110/36
100-130
8500
4690
74.5
27.75
0.004
6000
1.31
H
172/110/36
100-130
9000
557
10
0.5
0.032
1200
2.08
G
58/34/26.5
11.5-13.5
Part
Number
Up to 5200V
Up to 1400V
Up to 2200V
Up to 6000V
Up to 6500V
DRD5150H65
Up to 7200V
DRD4950H72
DRD6800A22
2200
6800
94
44.18
0.0057
6000
1.03
A
150/100/35
80-100
DRD8880H22
2200
8880
125
78.13
0.004
6000
0.98
H
172/110/35
110-130
DRD850D34
3400
850
10.8
0.583
0.035
1500
1.95
D
47/29/14.5
8-12
DRD960G34
3400
960
12
0.72
0.035
1500
1.7
G
58/34/26.5
12-18
DRD1830F34
3400
1830
23
2.65
0.02
1500
1.35
F
75/47/26.5
18-26
DRD2050X34
3400
2050
25.8
3.33
0.018
3000
1.55
X
85/53/26.5
26-34
DRD2980C34
3400
2980
36.5
6.66
0.0125
3000
1.35
C
100/63/26.5
40-50
DRD3920V34
3400
3920
49.5
12.25
0.01
3000
1.25
V
110/73/26.5
50-62
DRD5240W34
3400
5240
64.2
20.61
0.007
6000
1.29
W
120/84/26.5
62-78
DRD6140A34
3400
6140
84.4
35.62
0.0057
6000
1.1
A
150/100/35
80-100
DRD7810H34
3400
7810
118
69.62
0.004
6000
1.1
H
172/110/35
110-130
DRD870G40
4000
870
15
1.13
0.032
1800
1.6
G
58.5/34/27
11.5-13.5
DRD1230F40
4000
1225
25
3.13
0.022
3400
1.6
F
73/47/27
18-22
DRD2960Y40
4000
2960
62.5
19.53
0.0095
3000
1.25
Y
112.5/73/37.3
38-47
Up to 2500V
DRD3390V40
4000
3388
62.5
19.53
0.0075
3000
1.25
V
110/73/26.5
38-47
DRD4350A40
4000
4350
83
34.50
0.007
3000
1.06
A
151/100/37.5
75-91
Up to 3400V
Up to 4000V
4400
170
1.5
0.01
0.115
300
2.1
E
42/25/15
2.5-3.8
Up to 4500V
DRD2000L45
4500
2000
31
3.92
0.013
3000
1.4
L
102/63/32.9
40-48
DRD6290H45
4500
6290
99.4
49.4
0.004
6000
1.19
H
172/110/36
110-130
IT (AV) at
TC = 65°C
(A)
IFSM at Tvj
VR=0 (kA)
I2 t at Tvj
VR = 0
(MA 2 s)
IFM
(A)
VF
(V)
Qr
(µC)
trr
(µs)
Outline
Type Code
Flange OD
Contact OD
Height (mm)
Clamping
Force (kN)
min - max
1600
295
3.5
0.061
600
2.65
25
1.22
T
42/19/15
4.5-5.5
DSF8025SE
2500
650
7.5
0.281
1000
2.3
540
5
E
42/25/15
7-9
DF051
2500
1490
14
0.98
1500
1.85
800
5
F
75/47/29
21-25
Up to 1400V
DF451
DSF8045SK
4500
430
3.5
0.061
1000
4
440
3.07
K
42/25/29
7-9
DSF20545SF
4500
1250
16
1.28
1800
2.1
1250
7
F
75/47/29
17.5-21.5
DSF21545SV
4500
3200
20
2
3000
2
1800
7
V
112.5/73/27
34-48
6000
400
4.2
0.09
600
3.8
700
6
G
58/35/29
10.8-13.2
Up to 6000V
DSF11060SG
Up to 4800V
DRD1100F48
VRRM (V)
Part
Number
Up to 4500V
Up to 4400V
DRA170E44
Fast Recovery Diodes
4800
1105
20.5
2.13
0.022
3400
1.8
F
73/47/27
18-22
DRD710G50
5000
710
11.5
0.66
0.032
1800
1.8
G
58.5/34/ 27
11.5-13.5
DRD2690Y50
5000
2691
55
15.12
0.0095
3000
1.21
Y
112.5/73/37.3
50-62
DRD3080V50
5000
3083
55
15.12
0.0075
3000
1.21
V
110/73/26.5
50-62
Up to 5000V
18
For further information and datasheets visit www.dynexsemi.com
19
Package Outlines - IGBT Modules
All dimensions shown in mm unless stated otherwise.
Package Type: D
Package Type: E
Nominal weight: 1000g/1600g
2
1(E1)
Single Switch - ESM
2(C2)
12(C2)
7
3(C)
10(E2)
1(E)
38
5(E1)
1(E1)
38
4(E2)
Package Type: N
Nominal weight: 1000g/1600g
Nominal weight: 1000g
Single Switch - NSM
Single Switch - FSM/S
2
8(E1)
1
57
3(E1)
3(E1)
1(E2)
External connection
C1 - Aux Collector
E1 - Aux Emitter
G - Gate
38
38
E1
140
Package Type: P
Package Type: P
Nominal weight: 500/750g
Chopper High Side - PKM
1(E1/E2)
1
1(A/C2)
3(C2)
2(K)
38
1(E1C2)
C1 - Aux Collector
E1 and E2 - Aux Emitter
G1 and G2 - Gate
5(C2/E1)
8(C1)
4(G1)
1(E1/C2)
3(E2)
Half Bridge - PHM
2(C1)
6(G 2 )
Chopper Low Side - PLM
C1 - Aux Collector
E1 and E2 - Aux Emitter
G1 and G2 - Gate
38
38
140
8(C 2 )
6(G2) 7(E2)
26.2
5(E1)
4(G1)
3(E2)
26.2
124
3(E2)
7(E 2 )
8
4
2
1
5
67
73
73
2(C1)
54
2
Nominal weight: 500g
140
124
Bi-directional Switch - PBM
8
57
2(C2)
2
124
External connection
140
6
7
4(C1)
G
4(E2)
C1 - Aux Collector
E1 - Aux Emitter
G1 - Gate
3
External connection
C1
G
9(G1)
124
3
E1
57
4
2(C2)
130
8
1(C1)
4
130
7(C1)
9
C1
External connection
3
7
4(E)
140
3(C1)
1
6(E)
124
2(C2)
7(C1)
3
8(E)
3 - Aux Collector
2 - Gate
1 - Aux Emitter
6(G1)
Package Type: F
5(C)
External connection
Chopper switch - DCM/S
140
7(C)
2(G)
5
124
4(E2)
4
3(C1)
C1 and C2 - Aux Collector
E1 and E2 - Aux Emitter
G1 and G2 - Gate
10
190
7(C1)
7
11(G2)
6
11
6(G1)
9(C)
2
57
External connection
9
4
5(E1)
1
1
8
3
3
6
12
Nominal weight: 1700g
Dual Switch - DDM/S
5
130
Package
Outlines
Module Outlines and Circuit Configurations
2(C1)
5(E1)
1
4(G )
1
8(C )
7(E 2)
6(G2)
6(G2)7(E2)
Notes:
1. Mounting recommendations are given in the application note AN4505 ‘Heatsink Issues For IGBT Modules’ available from our website.
For further information and datasheets visit www.dynexsemi.com
21
Package Outlines - IGBT Modules
Package Outlines - FRD Modules
Module Outlines and Circuit Configurations
Module Outlines and Circuit Configurations
All dimensions shown in mm unless stated otherwise.
All dimensions shown in mm unless stated otherwise.
9(G2)
5
3
6(E1)
E1(A1)
E2(A2)
External connection
Chopper Switch - XCM
2 (K)
7(C1)
5 (A)
124
4 (A)
External connection for single
diode application
140
1(Aux.E)
6 (E1)
4 (K)
1
3
1(K1)
130
4
2
2
124
3(A1)
Chopper Switch - ACM
3
External connection
5
4
3(C)
7(C)
9(C)
External connection
4(K1)
2(K2)
3(A1)
1(A2)
2
8(E)
External connection
38
6
190 ± 0.5
6(E)
1
5(A)
124
4(A2)
External connection
External connection
External connection for single
diode application
External connection for single
diode application
38
7
4(E)
57
57
1
1(E)
4
3
2(K2)
130
9
8
9(C)
2(G)
Dual Diode - NXM
External connection
External connection
7(C)
Nominal weight: 1000g
Dual Diode - FXM/S
Single Switch - ASM
5(C)
Package Type: N
Nominal weight: 1000g/1600g
Nominal weight: 1700g
3(C)
4(A2)
140
Package Type: F
Package Type: A
6(A1)
38
3 (C1)
5(K2)
External connection
124
2(G)
C1 and C2 - Aux Collector
E1 and E2 - Aux Emitter
G1 and G2 - Gate
7(K1)
5
E3(A3)
140
5 (C1)
External connection
External connection for single
diode application
3(Aux C)
6 (G1)
6
4
4(E2)
External connection
124
48
1 (E1)
1
3
5
38
140
160
7 (E1)
2(G)
1(Aux E)
Chopper Switch - GCM
2
57
4
57
C1 and C2 - Aux Collector
E1 and E2 - Aux Emitter
G1 and G2 - Gate
C3(K3)
190
4(E2)
C2(K2)
130
8(E2)
3(C1)
7
5(C1)
C1(K1)
4
124
5(C2) 3(Aux C)
6
57
8
7(C1)
130
130
2
4
9
6
7
2
6(G1)
6
21
Dual Diode - XXM
External connection
9
7(E1)
Nominal weight: 1100g
Triple Diode - EXM
External connection
7
Package Type: X
Nominal weight: 1700g
Single Switch - XSM
2(C2) 10(C2)
8
1(E1)
Package Type: E
3 1
1
3
10
Nominal weight: 1100g
Dual Switch - GDM
5
7
Package Type: X
Nominal weight: 1000g
48
Package Type: G
140
140
2(G)
1(E)
8(E)
4(C)
Package Type: P
3 - Aux Collector
2 - Gate
1 - Aux Emitter
Nominal weight: 500g
Series Diode - PXM
3
2
1
2(A2)
1(K2/A1)
3(K1)
73
57
38 ± 0.5
140 ± 0.5
6(E)
External connection
124
38
140
Notes:
Notes:
1. Mounting recommendations are given in the application note AN4505 ‘Heatsink Issues For IGBT Modules’ available from our website.
1. Mounting recommendations are given in the application note AN4505 ‘Heatsink Issues For IGBT Modules’ available from our website.
22
For further information and datasheets visit www.dynexsemi.com
23
Package Outlines
Thyristor and Diode Outlines
For detailed dimensions, see datasheet on www.dynexsemi.com
ØA MAX
D MAX
ØB NOM
Outline
Flange (A) [mm]
Max*
Pole (B) [mm]
Nominal*
Depth (D) [mm]
Maximium
Weight
(kg)
A
148 & 150
100
37
2.6
B
120
85
36
1.5
C
99 & 102
63
28
0.8
D
47
29
15
0.24
E
42
25
15
0.082
F
73 & 75
47
28
0.433
G
57 & 58
35
28
0.25
H
172
110
36
3.5
J
57 & 58
34
36
0.322
K
42
25
27
0.16
L
99 & 100 & 102
63
36
1.05
M
148 & 150
100
27
1.95
N
73 & 75
47
36
0.48
T
42
19
15
0.055
V
110 & 112
73
29
1.1
W
120
84
29
1.55
X
85
53
27
0.6
Y
112 & 120
73 & 78
36
1.45
Notes:
*The character ‘&’ denotes we manufacture products in a generic outline, some of which have one flange/contact diameter and
others that have a slightly different flange/contact diameter. There is no choice of flange/contact diameter for a specific device.
24
25
Package Outlines
GTO Outlines
For detailed dimensions, see datasheet on www.dynexsemi.com
ØA MAX
D MAX
ØB NOM
26
Outline
Flange/Max OD
(A) [mm]
Pole
(B) [mm]
Depth
(D) [mm]
Weight
(kg)
C
108
77
27
1.4
E
42
25
15
0.082
CA
56
38
36
0.46
H
100
63
27
0.82
P
56
38
27
0.35
W
120
85
27
1.7
v
85
53
27
1.2
27
Power
Assemblies
29
Power Assemblies
Power Assembly Products
In addition to the discrete product lines, Dynex offers a
design, build and refurbishment service for power assemblies
through our Power Electronic Assemblies group. This group
provides support for customers requiring more than the
basic semiconductor and utilises the skills of our power
electronics, mechanical and electronic engineers. The team
has direct access to the company’s application, test and product
design personnel to produce the optimum solution for your
requirements.
Power Assembly Products
Typical applications for Dynex power assemblies include:
• High power rectification
• Inverters
• Battery chargers
• Resistance welding switches
Rectifiers
Standard diode and thyristor rectifier combinations include:
• 3-phase and dual 3- phase diode rectifier assemblies
• 3-phase (6 pulse) and dual 3-phase (12 pulse) controlled
assemblies
Inverters/Converters
• 3-phase thyristor inverter power units
• IGBT chopper H-bridge inverter modules
• IGBT full 3-phase inverters for motor control
• Frequency converters
Stack Assemblies
• Stick stacks for high voltage, high current applications
• MV soft starts
• Crowbars
• GTO gate drive units
• Thyristor/GTO assemblies with anti- parallel diode
combinations
• Pulse power switches
• Air cooled and water cooled stack assemblies
• Soft starts
• Magnet supplies
• Variable speed drives
• Static compensation stacks
Dynex also has a range of air and liquid cooled heatsink
and clamping systems.
Standard Assemblies
Many factors need to be taken into consideration to maximise
semiconductor performance in an assembly. Typically these
are; type of heatsink, transient conditions, overloads, ambient
temperature, surface finish (e.g. black anodised) and the method
of cooling on which the application relies (air, liquid or phase
change). With a wealth of experience behind them and using
3D CAD and simulation software, our designers have a vast
range of bipolar and IGBT power semiconductor devices and
components available which will ensure that even standard
power assemblies are optimised for customer applications.
30
Pulsed Power Systems
For many pulsed power applications, semiconductor switches
can offer advantages over alternative switch technologies.
These advantages include:
• Increased number of operations and reliability
• Improved waveform shaping and pulse control
Contract Assembly Refurbishment
and Customised Projects
The manufacturing facility has a proven capability for building
and testing high power semiconductor assemblies. This
capability is offered to third party customers looking for a ready
built power assembly operation to provide part or complete
solutions for this type of manufacturing. This service extends
to refurbishment of these assemblies, where the units can
be renovated with the latest technology components giving
them extended operating life and renewed long term reliability.
SVC Valve Stacks
Thyristor Controlled Reactors (TCRs) are used, usually in
combination with Fixed or Mechanically Switched Capacitors
(FC or MSC) to provide Static VAR Compensation. This helps
improve the quality of the mains voltage supply by compensating
for large loads with poor power factors. Typical example
applications include flicker reductions and power factor
compensation of Electric Arc Furnaces in steel mills. Dynex
provide a range of water cooled TCR valves from 12MVAr up
to 100MVAr. These can be used in both single phase and three
phase applications. The Dynex range of TCRs has been designed
with optimum performance and availability in mind. All the
thyristor modules used in the TCR valves are matched
to improve static and dynamic sharing whilst N+1 redundancy
is included as standard to ensure consistent availability of
supply, even in the harshest of operating conditions.
• Increased rep rate
Heatsinks Clamps and Accessories
• Higher current pulses
Device Clamps
The choice of semiconductor device is critical for correct and
reliable operation and Dynex have a wide range of thyristor
types, including some which have been specifically developed
for high di/dt pulsed power applications. In addition, Dynex
have many years of experience in providing specific assemblies
for custom Pulsed Power requirements. Typically used for:
1. Connection of energy storage to low inductance loads
2. Crowbars for by-passing / protecting a load
3. General thyratron and ignitron replacements
A line of pre-loaded clamps is offered, up to 180kN for our
150mm disc devices. Bar clamps are suitable for single and
double side cooling, with high insulation versions available
for high voltage assemblies.
Heatsinks
Dynex has its own proprietary range of extruded aluminium
heatsinks designed to optimise the performance of our
semiconductors. Additionally, Dynex has access to a vast range
of aluminium extrusions from independent manufacturers
giving our design team the best options available. Water cooled
heatsinks (coolers) are available and are compatible with devices
up to 100mm silicon diameter. These are designed for use in
high current, high power assemblies such as single, three or six
phase bridges or AC controllers. Complete bridges of up to six
devices may be constructed and two coolers per device may
be used for double side cooling.
Accessories
Dynex can also provide a wide range of accessories, such as
gate firing boards, voltage dividers, optical combiner and splitter
boards, GLPS (Ground Level Power Supply) and high voltage
isolated stack firing systems for multi level stacks (typically
10 levels).
High Power Test Equipment
The Dynex Equipment Group have designed a wide range
of testers which can capture all of the electrical and timing
measurements required to define the performance of high
power semiconductor devices (Thyristors, Diodes, GTO’s and
IGBT’s). Having provided this type of equipment for internal use
for 30 years, Dynex have developed a capability to provide low
cost customised test solutions for third party companies.
This capability has been developed to enable test systems to be
offered for a wide variety of applications which are not always for
semiconductor testing. E.g. Fuse testing, lightning simulation,
breaker testing, capacitor reliability, resistor thermal cycling,
crowbar testing etc.
Our engineering team are able to review custom requirements
for high voltage and high current testing and to design the
hardware solution to meet these requirements. Amongst our
existing designs we have produced the following systems in
the field:Passive thermal cycling equipment, power cycling equipment,
dynamic IGBT testers, high voltage hot blocking equipment,
low voltage hot test equipment, Qrr and Tq testing, multiple
cycle surge testing, thyristor high power parametric test
systems and high voltage leakage measurement systems.
For further information and datasheets visit www.dynexsemi.com
31
Symbols and Definitions
CS Snubber capacitance
PG Gate power dissipation
dI/dt Critical rate of rise of on-state/forward current
PG(AV) Mean gate power dissipation
dIFG/dt Rate of rise of positive gate current
PGM Peak gate power dissipation
dIGQ/dt Rate of rise of reverse gate current (GTO)
Qr Recovered charge
dIT/dt Critical rate of rise of on-state current (GTO)
Qrr Reverse recovery charge
dsc Double side cooled
rT On-state/forward slope resistance
dV/dt Critical rate of rise of off-state voltage
Rth(c-hs) Thermal resistance – case to heatsink
dIVD/dt Rate of rise of off-state voltage (GTO)
Rth(j-c) Thermal resistance – junction to case
EOFF Turn-off energy loss
Rth(j-hs) Thermal resistance – junction to heatsink
Erec Reverse recovery energy
Rth(j-w) Thermal resistance – junction to water
Esw(TOT) Total switching energy
Tc Case temperature
Fm/F Clamping force/mounting torque
tgq Gate controlled turn-off time
I²t I²t value
tq Turn-off time
IC Collector current
trr Reverse recovery time
IC(PK) Peak collector current
THS Heatsink temperature
IDRM On-state leakage current (thyristor)
Tvj Virtual junction temperature
IF Forward current (diode)
Tvjm Maximum virtual junction temperature
IF(AV) Mean forward current (diode)
Twater
Water temperature
IFM
Peak forward current (diode)
VCE(sat) Collector-emitter saturation voltage (IGBT)
IF(RMS) RMS forward current (diode)
VCES Collector-emitter voltage (IGBT)
IFSM Single cycle surge current (diode),
(10ms half sinewave)
VDRM Repetitive peak off-state voltage
IG(ON) VDSM Non-repetitive peak off-state voltage
Gate turn-on current (GTO)
IGT VF
Forward voltage (diode)
Gate trigger current
IRMS VFM Peak forward voltage (diode)
RMS line current
IPK Visol Isolation voltage
Peak current
IRRM VGT Gate trigger voltage
Peak reverse recovery current
IT(RMS) VR Reverse voltage
RMS on-state current (thyristor)
IT/ITM VRRM Repetitive peak reverse voltage
On-state current
IT(AV) VRSM Non-repetitive peak reverse voltage
Mean on-state current (thyristor)
ITCM VT On-state voltage
Maximum repetitive controllable current (GTO)
ITSM VTM Peak on-state voltage
Single cycle surge current (thyristor),
(10ms half sinewave)
VTO Threshold voltage (diode)
VT(TO) Threshold voltage (thyristor)
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