DIM500GCM33-TS000 IGBT Chopper Module Replaces DS6098-2 DS6098-3 September 2014 (LN31960) FEATURES KEY PARAMETERS 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max) Isolated AlSiC Base With AlN Substrates 3300V 2.2V 500A 1000A * Measured at the auxiliary terminals APPLICATIONS High Reliability Inverters Motor Controllers Traction Drives Choppers The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A. The DIM500GCM33-TS000 is a 3300V, n-channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. 1(E) 2(K) 3(C) 4(A) 7(E) 6(G) 5(C) Fig. 1 Circuit configuration The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: DIM500GCM33-TS000 Note: When ordering, please use the complete part number Outline type code: G (See Fig. 11 for further information) Fig. 2 Package Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 1 /8 DIM500GCM33-TS000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25°C unless stated otherwise Symbol Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage IC Test Conditions VGE = 0V Max. Units 3300 V ±20 V Continuous collector current Tcase = 110°C 500 A IC(PK) Peak collector current 1ms, Tcase = 140°C 1000 A Pmax Max. transistor power dissipation Tcase = 25°C, Tj = 150°C 5.2 kW 80 kA s 80 kA s 6000 V 10 pC 2 2 Diode I t value (IGBT arm) It VR = 0, tp = 10ms, Tj = 125ºC 2 Diode I t value (Diode arm) Visol Isolation voltage – per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz QPD Partial discharge – per module IEC1287, V1 = 3500V, V2 = 2600V, 50Hz RMS 2 2 THERMAL AND MECHANICAL RATINGS Internal insulation material: AlN Baseplate material: AlSiC Creepage distance: 33mm Clearance: 20mm CTI (Comparative Tracking Index): >600 Symbol Parameter Rth(j-c) Thermal resistance – transistor (per arm) Thermal resistance – diode (IGBT arm) Rth(j-c) Rth(c-h) Tj Tstg Continuous dissipation – junction to case Min Typ. Max Units - - 24 °C/kW - - 48 °C/kW 48 °C/kW Thermal resistance – diode (Diode arm) Continuous dissipation – junction to case Thermal resistance – case to heatsink (per module) Mounting torque 5Nm (with mounting grease) - - 8 °C/kW Transistor - - 150 °C Diode - - 150 °C -40 - 125 °C Mounting – M6 - - 5 Nm Electrical connections – M4 - - 2 Nm Electrical connections – M8 - - 10 Nm Junction temperature Storage temperature range Screw torque 2/8 Test Conditions - Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM500GCM33-TS000 ELECTRICAL CHARACTERISTICS Tcase = 25°C unless stated otherwise. Symbol ICES IGES VGE(TH) VCE(sat) Parameter Max Units VGE = 0V, VCE = VCES 2 mA VGE = 0V, VCE = VCES, Tcase = 125°C 30 mA VGE = 0V, VCE = VCES, Tcase = 150°C 50 mA Gate leakage current VGE = ± 20V, VCE = 0V 1 μA Gate threshold voltage IC = 40mA, VGE = VCE 5.7 V VGE = 15V, IC = 500A 2.2 V VGE = 15V, IC = 500A, Tj = 125°C 2.8 V VGE = 15V, IC = 500A, Tj = 150°C 3.0 V Collector cut-off current Collector-emitter saturation voltage Test Conditions Min Typ IF Diode forward current DC 500 A IFM Diode maximum forward current tp = 1ms 1000 A 2.4 V 2.4 V 2.5 V 2.5 V 2.4 V 2.4 V VF † Diode forward voltage (IGBT arm) Diode forward voltage (Diode arm) Diode forward voltage (IGBT arm) Diode forward voltage (Diode arm) Diode forward voltage (IGBT arm) Diode forward voltage (Diode arm) IF = 500A IF = 500A, Tj = 125°C IF = 500A, Tj = 150°C Cies Input capacitance VCE = 25V, VGE = 0V, f = 1MHz 90 nF Qg Gate charge ±15V 10 μC Cres Reverse transfer capacitance VCE = 25V, VGE = 0V, f = 1MHz 2 nF LM Module inductance – per arm 25 nH RINT Internal resistance – per arm 260 μ 1850 A SCData Short circuit current, ISC Tj = 150°C, VCC = 2500V tp ≤ 10μs, VGE ≤ 15V * VCE (max) = VCES – L x dI/dt IEC 60747-9 Note: † Measured at the power busbars, not the auxiliary terminals * L is the circuit inductance + LM Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 3 /8 DIM500GCM33-TS000 ELECTRICAL CHARACTERISTICS Tcase = 25°C unless stated otherwise Symbol Parameter Test Conditions td(off) tf EOFF td(on) Turn-off delay time Fall time Turn-off energy loss Turn-on delay time tr EON Qrr Irr Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse recovery current Erec Diode reverse recovery energy Min Typ. Max Units 2700 520 1000 1000 ns ns mJ ns VCE = 1800V 400 650 285 310 ns mJ μC A dIF/dt = 1400A/μs 350 mJ IC = 500A VGE = ±15V VCE = 1800V RG(ON) = 4.7 RG(OFF) = 4.7 Cge = 100nF LS ~ 100nH IF = 500A Tcase = 125°C unless stated otherwise Symbol Parameter Test Conditions td(off) tf EOFF Turn-off delay time Fall time Turn-off energy loss td(on) tr EON Qrr Irr Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse recovery current Erec Diode reverse recovery energy Min Typ. Max Units 2750 570 1100 ns ns mJ VCE = 1800V 1020 420 850 470 390 ns ns mJ μC A dIF/dt = 1400A/μs 600 mJ IC = 500A VGE = ±15V VCE = 1800V RG(ON) = 4.7 RG(OFF) = 4.7 Cge = 100nF LS ~ 100nH IF = 500A Tcase = 150°C unless stated otherwise Symbol Parameter Test Conditions td(off) tf EOFF td(on) Turn-off delay time Fall time Turn-off energy loss Turn-on delay time tr EON Qrr Irr Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse recovery current Erec Diode reverse recovery energy 4/8 Min Typ. Max Units 2800 550 1150 1030 ns ns mJ ns VCE = 1800V 430 950 535 400 ns mJ μC A dIF/dt = 1400A/μs 650 mJ IC = 500A VGE = ±15V VCE = 1800V RG(ON) = 4.7 RG(OFF) = 4.7 Cge = 100nF LS ~ 100nH IF = 500A Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM500GCM33-TS000 Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics Fig. 5 Typical switching energy vs collector current Fig. 6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 5 /8 DIM500GCM33-TS000 6/8 Fig. 7 Diode typical forward characteristics Fig. 8 Reverse bias safe operating area Fig. 9 Diode reverse bias safe operating area Fig. 10 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM500GCM33-TS000 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal Weight: 1050g Module Outline Type Code: G Fig. 11 Module outline drawing Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 7 /8 DIM500GCM33-TS000 IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does n ot constitute any guarantee of suitability for use in a specific application. The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact Customer Service. Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. The information is provided without any warranty or guarantee of any kind. This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the most up to date version and has not been superseded. The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design and safety precautions should always be followed to protect persons and property. Product Status & Product Ordering: We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product design is complete and final characterisation for volume production is in progress. The datasheet represents the product as it is now understood but details may change. No Annotation: The product has been approved for production and unless otherwise notified by Dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request. Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln, Lincolnshire, LN6 3LF, United Kingdom Fax: +44(0)1522 500550 Tel: +44(0)1522 500500 Web: http://www.dynexsemi.com DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln, Lincolnshire, LN6 3LF, United Kingdom Fax: +44(0)1522 500020 Tel: +44(0)1522 502753 / 502901 Email: [email protected] Dynex Semiconductor Ltd. 2013. 8/8 Technical Documentation – Not for resale. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com