DCR2880B65 - Dynex Semiconductor Ltd.

DCR2880B65
Phase Control Thyristor
DS5786-4 April 2013 (LN30262)
KEY PARAMETERS
FEATURES

Double Side Cooling

High Surge Capability
VDRM
IT(AV)
ITSM
dV/dt*
dI/dt
6500V
2845A
38500A
1500V/µs
300A/µs
* Higher dV/dt selections available
APPLICATIONS

High Power Drives

High Voltage Power Supplies

Static Switches
VOLTAGE RATINGS
Part and
Ordering
Number
DCR2880B65*
DCR2880B60
DCR2880B55
DCR2880B50
Repetitive Peak
Voltages
VDRM and VRRM
V
6500
6000
5500
5000
Conditions
Tvj = -40°C to 125°C,
IDRM = IRRM = 300mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Lower voltage grades available.
o
o
*6200V @ -40 C, [email protected] 0 C
Outline type code: B
(See Package Details for further information)
ORDERING INFORMATION
Fig. 1 Package outline
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DCR2880B65
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
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DCR2880B65
SEMICONDUCTOR
CURRENT RATINGS
Tcase = 60°C unless stated otherwise
Symbol
Parameter
Test Conditions
Max.
Units
2845
A
Double Side Cooled
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
4469
A
Continuous (direct) on-state current
-
4130
A
IT
Half wave resistive load
SURGE RATINGS
Symbol
ITSM
2
It
Parameter
Surge (non-repetitive) on-state current
Test Conditions
Max.
Units
10ms half sine, Tcase = 125°C
38.85
kA
VR = 0
7.55
MA s
Min.
Max.
Units
2
I t for fusing
2
THERMAL AND MECHANICAL RATINGS
Symbol
Rth(j-c)
Rth(c-h)
Parameter
Thermal resistance – junction to case
Thermal resistance – case to heatsink
Test Conditions
Double side cooled
DC
-
0.007
°C/W
Single side cooled
Anode DC
-
0.0116
°C/W
Cathode DC
-
0.0181
°C/W
Double side
-
0.0014
°C/W
-
0.0028
°C/W
-
125
°C
Clamping force 76.0kN
(with mounting compound)
Blocking VDRM / VRRM
Single side
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-55
125
°C
Fm
Clamping force
68.0
84.0
kN
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DCR2880B65
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol
IRRM/IDRM
Parameter
Test Conditions
Min.
Max.
Units
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125°C
-
300
mA
dV/dt
Max. linear rate of rise of off-state voltage
To 67% VDRM, Tj = 125°C, gate open
-
1500
V/µs
dI/dt
Rate of rise of on-state current
From 67% VDRM to 2x IT(AV)
Repetitive 50Hz
-
150
A/µs
Gate source 30V, 10,
Non-repetitive
-
300
A/µs
tr < 0.5µs, Tj = 125°C
VT(TO)
rT
tgd
Threshold voltage – Low level
500 to 2400A at Tcase = 125°C
-
0.94
V
Threshold voltage – High level
2400 to 7200A at Tcase = 125°C
-
1.13
V
On-state slope resistance – Low level
500A to 2400A at Tcase = 125°C
-
0.343
m
On-state slope resistance – High level
2400A to 7200A at Tcase = 125°C
-
0.264
m
VD = 67% VDRM, gate source 30V, 10
-
3
µs
-
1200
µs
2800
6400
µC
Delay time
tr = 0.5µs, Tj = 25°C
tq
Turn-off time
Tj = 125°C, VR = 200V, dI/dt = 1A/µs,
dVDR/dt = 20V/µs linear
QS
Stored charge
IT = 2000A, Tj = 125°C, dI/dt – 1A/µs,
IL
Latching current
Tj = 25°C, VD = 5V
-
3
A
IH
Holding current
Tj = 25°C, RG-K = , ITM = 500A, IT = 5A
-
300
mA
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DCR2880B65
SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Test Conditions
Max.
Units
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25°C
1.5
V
VGD
Gate non-trigger voltage
At 50% VDRM, Tcase = 125°C
0.4
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25°C
400
mA
IGD
Gate non-trigger current
At 50% VDRM, Tcase = 125°C
10
mA
CURVES
Instantaneous on-state current IT - (A)
7000
6000
5000
4000
min 125°C
max 125°C
3000
min 25°C
max 25°C
2000
1000
0
0.5
1.5
2.5
3.5
Instantaneous on-state voltage VT - (V)
Fig.2 Maximum & minimum on-state characteristics
VTM EQUATION
VTM = A + Bln (IT) + C.IT+D.IT
Where
A = 0.914146
B = -0.03808
C = 0.00016
D = 0.015311
these values are valid for Tj = 125°C for IT 500A to 7200A
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DCR2880B65
SEMICONDUCTOR
130
20
Maximum case temperature, T case ( oC )
Mean power dissipation - (kW)
180
120
90
60
30
120
18
16
14
12
10
8
180
120
90
60
30
6
4
2
110
100
90
80
70
60
50
40
30
20
10
0
0
0
1000
2000
3000
4000
5000
0
1000
Mean on-state current, IT(AV) - (A)
3000
4000
5000
Mean on-state current, IT(AV) - (A)
Fig.3 On-state power dissipation – sine wave
Fig.4 Maximum permissible case temperature,
double side cooled – sine wave
20
130
180
120
90
60
30
120
110
100
18
Mean power dissipation - (kW)
Maximum heatsink temperature, T Heatsink - ( oC )
2000
90
80
70
60
50
40
30
16
14
12
10
8
d.c.
180
120
90
60
30
6
4
20
2
10
0
0
0
1000
2000
3000
4000
Mean on-state current, IT(AV) - (A)
Fig.5 Maximum permissible heatsink temperature,
double side cooled – sine wave
0
1000
2000
3000
4000
5000
6000
7000
Mean on-state current, IT(AV) - (A)
Fig.6 On-state power dissipation – rectangular wave
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DCR2880B65
SEMICONDUCTOR
130
d.c.
180
120
90
60
30
120
110
100
90
d.c.
180
120
90
60
30
120
Maximum heatsik temperature Theatsink - (oC)
Maximum permissible case temperature , Tcase - (°C)
130
80
70
60
50
40
30
20
10
110
100
90
80
70
60
50
40
30
20
10
0
0
1000
2000
3000
4000
5000
6000
0
Mean on-state current, IT(AV) - (A)
0
1000
2000
3000
4000
5000
6000
Mean on-state current, IT(AV) - (A)
Fig.7 Maximum permissible case temperature,
double side cooled – rectangular wave
Fig.8 Maximum permissible heatsink temperature,
double side cooled – rectangular wave
20
Double Side Cooling
Double side cooled
Thermal Impedance, Zth(j-c) ( °C/kW)
18
Ti (s)
Anode Side Cooling
16
Anode side cooled
Cathode side cooled
Zth =  [Ri x ( 1-exp. (t/ti))]
12
3
2.9559
4
2.2335
0.0137081
0.0548877
0.3311925
1.6905
1.3035
3.138
1.1859
5.9136
0.0251065
0.2410256
1.0806
11.002
1.2616
2.6216
13.3603
0.8304
0.0245837
0.2005035
5.7854
16.765
Ri (°C/kW)
Ti (s)
14
2
1.333
Ri (°C/kW)
Ti (s)
Cathode Sided Cooling
1
0.502
Ri (°C/kW)
[1]
10
Rth(j-c) Conduction
8
Tables show the increments of thermal resistance R th(j-c) when the device
operates at conduction angles other than d.c.
6
Double side cooling
Zth (z)
4
2
0
0.001
0.01
0.1
1
10
100
°
180
120
90
60
30
15
sine.
0.70
0.80
0.90
1.00
1.07
1.10
rect.
0.48
0.68
0.78
0.89
1.01
1.07
Anode Side Cooling
Zth (z)
°
180
120
90
60
30
15
sine.
0.67
0.77
0.87
0.95
1.02
1.05
rect.
0.47
0.66
0.75
0.86
0.96
1.02
Cathode Sided Cooling
Zth (z)
°
180
120
90
60
30
15
sine.
0.67
0.77
0.87
0.95
1.02
1.05
rect.
0.47
0.66
0.76
0.86
0.96
1.02
Time ( s )
Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW)
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DCR2880B65
SEMICONDUCTOR
Fig.11 Single-cycle surge current
40,000
800
35,000
700
30,000
QS max = 7066.1*(di/dt)
I - (A)
Reverse recovery current,RR
Stored Charge, QS - (uC)
Fig.10 Multi-cycle surge current
0.4891
25,000
20,000
QS min = 3539.7*(di/dt)0.5991
15,000
10,000
Conditions:
o
Tj = 125 C
VRpeak ~ 3900V, VRM ~ 2600V
snubber as apprpriate to
control reverse volts
5,000
IRR max = 59.812*(di/dt)
500
400
IRR min = 41.906*(di/dt)0.8147
300
Conditions:
200
o
Tj = 125 C
VRpeak ~ 3900V, VRM ~ 2600V
snubber as apprpriate to control
reverse volts
100
0
0.7589
600
0
0
5
10
15
20
25
30
Rate of decay of on-state current, di/dt - (A/us)
Fig.10 Reverse recovery charge
0
5
10
15
20
25
30
Rate of decay of on-state current, di/dt - (A/us)
Fig.11 Reverse recovery current
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DCR2880B65
SEMICONDUCTOR
Fig12 Gate Characteristics
30
Lower Limit
Upper Limit
5W
10W
20W
50W
100W
150W
-40C
Gate trigger voltage, VGT - (V)
25
20
15
10
5
0
0
1
2
3
4
5
6
7
8
9
10
Gate trigger current, IGT - (A)
Fig. 13 Gate characteristics
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DCR2880B65
SEMICONDUCTOR
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
3rd ANGLE PROJECTION
DO NOT SCALE
IF IN DOUBT ASK
HOLE Ø3.60 X 2.00
DEEP (IN BOTH
ELECTRODES)
20° OFFSET (NOM.)
TO GATE TUBE
Device
DCR5050B22
DCR4590B28
DCR3790B42
DCR3480B52
DCR2880B65
DCR2400B85
Maximum Minimum
Thickness Thickness
(mm)
(mm)
34.565
34.115
34.64
34.19
34.87
34.42
34.99
34.54
35.25
34.8
35.61
35.16
Ø120.0 MAX.
Ø84.6 NOM.
Ø1.5
CATHODE
GATE
ANODE
Ø84.6 NOM.
FOR PACKAGE HEIGHT SEE
TABLE
Clamping force: 76kN ±10%
Lead length: 420mm
Lead terminal connector: M4 ring
Package outline type code: B
Fig.14 Package outline
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DCR2880B65
SEMICONDUCTOR
IMPORTANT INFORMATION:
This publication is provided for information only and not for resale.
The products and information in this publication are intended for use by appropriately trained technical personnel.
Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute
any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of
the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements
are met. Should additional product information be needed please contact Customer Service.
Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical
errors. The information is provided without any warranty or guarantee of any kind.
This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the
most up to date version and has not been superseded.
The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property.
The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or
malfunction.
The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective
safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge
remaining in the product must be discharged and allowed to cool before safe handling using protective gloves.
Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the
product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include
potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design
and safety precautions should always be followed to protect persons and property.
Product Status & Product Ordering:
We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for
production. The annotations are as follows:Target Information:
Provisional Information:
Preliminary Information:
No Annotation:
This is the most tentative form of information and represents a very preliminary specification.
No actual design work on the product has been started.
Some initial development work has been performed. The datasheet represents a view of the
end product based on very limited information. Certain details will change.
The product design is complete and final characterisation for volume production is in
progress.The datasheet represents the product as it is now understood but details may change.
The product has been approved for production and unless otherwise notified by Dynex any
product ordered will be supplied to the current version of the data sheet prevailing at the
time of our order acknowledgement.
All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request.
Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their
respective owners.
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LIMITED
Doddington Road, Lincoln, Lincolnshire, LN6 3LF
United Kingdom.
Phone: +44 (0) 1522 500500
Fax:
+44 (0) 1522 500550
Web: http://www.dynexsemi.com
 Dynex Semiconductor Ltd.
CUSTOMER SERVICE
Phone: +44 (0) 1522 502753 / 502901
Fax:
+44 (0) 1522 500020
e-mail: [email protected]
Technical Documentation – Not for resale.
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