DCR6650H42 - Dynex Semiconductor Ltd.

DCR6650H42
Phase Control Thyristor
Preliminary Information
DS6162-1 November 2014 (LN32181)
KEY PARAMETERS
FEATURES

Double Side Cooling

High Surge Capability
VDRM
IT(AV)
ITSM
dV/dt*
dI/dt
4200V
6650A
98560A
2000V/µs
200A/µs
* Higher dV/dt selections available
APPLICATIONS

High Power Drives

High Voltage Power Supplies

Static Switches
VOLTAGE RATINGS
Part and
Ordering
Number
DCR6650H42
DCR6650H40
DCR6650H38
Repetitive Peak
Voltages
VDRM and VRRM
V
4200
4000
3800
Conditions
Tvj = -40°C to 125°C,
IDRM = IRRM = 600mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Lower voltage grades available.
Outline type code: H
ORDERING INFORMATION
(See Package Details for further information)
When ordering, select the required part number
shown in the Voltage Ratings selection table.
Fig. 1 Package outline
For example:
DCR6650H42
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
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DCR6650H42
SEMICONDUCTOR
CURRENT RATINGS
Tcase = 60°C unless stated otherwise
Symbol
Parameter
Test Conditions
Max.
Units
6650
A
Double Side Cooled
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
10446
A
Continuous (direct) on-state current
-
9134
A
IT
Half wave resistive load
SURGE RATINGS
Symbol
ITSM
2
It
Parameter
Surge (non-repetitive) on-state current
Test Conditions
Max.
Units
10ms half sine, Tcase = 125°C
98.56
kA
VR = 0
48.57
MA s
Min.
Max.
Units
2
I t for fusing
2
THERMAL AND MECHANICAL RATINGS
Symbol
Rth(j-c)
Rth(c-h)
Parameter
Thermal resistance – junction to case
Thermal resistance – case to heatsink
Test Conditions
Double side cooled
DC
-
0.004255
°C/W
Single side cooled
Anode DC
-
0.008
°C/W
Cathode DC
-
0.0093
°C/W
Double side
-
0.0009
°C/W
-
0.0018
°C/W
-
125
°C
Clamping force 135.0kN
(with mounting compound)
Blocking VDRM / VRRM
Single side
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-55
125
°C
Fm
Clamping force
120
155
kN
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DCR6650H42
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol
IRRM/IDRM
Parameter
Test Conditions
Min.
Max.
Units
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125°C
-
600
mA
dV/dt
Max. linear rate of rise of off-state voltage
To 67% VDRM, Tj = 125°C, gate open
-
2000
V/µs
dI/dt
Rate of rise of on-state current
From 67% VDRM to 2x IT(AV)
Repetitive 50Hz
-
200
A/µs
Gate source 30V, 10,
Non-repetitive
-
500
A/µs
tr < 0.5µs, Tj = 125°C
VT(TO)
rT
tgd
Threshold voltage – Low level
500 to 4000A at Tcase = 125°C
-
0.775
V
Threshold voltage – High level
4000 to 8000A at Tcase = 125°C
-
0.977
V
On-state slope resistance – Low level
500A to 4000A at Tcase = 125°C
-
0.124
m
On-state slope resistance – High level
4000A to 8000A at Tcase = 125°C
-
0.076
m
VD = 67% VDRM, gate source 30V, 10
-
3
µs
700
µs
2800
6760
µC
42
70
A
Delay time
tr = 0.5µs, Tj = 25°C
tq
Turn-off time
IT = 3000A, Tj = 125°C,
VR = 200V, dI/dt = 1A/µs,
dVDR/dt = 20V/µs linear
QS
Stored charge
IT = 3000A, Tj = 125°C, dI/dt – 1A/µs,
VRpeak ~2520V, VR ~ 1680V
IRR
Reverse recovery current
IL
Latching current
Tj = 25°C, VD = 5V
-
3
A
IH
Holding current
Tj = 25°C, RG-K = , ITM = 500A, IT = 5A
-
300
mA
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DCR6650H42
SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Test Conditions
Max.
Units
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25°C
1.5
V
VGD
Gate non-trigger voltage
At 50% VDRM, Tcase = 125°C
0.4
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25°C
350
mA
IGD
Gate non-trigger current
At 50% VDRM, Tcase = 125°C
10
mA
CURVES
12000
Instantaneous on state current , IT - (A)
10000
8000
6000
4000
min 25°C
max 25°C
2000
min 125°C
max 125°C
0
0.50
1.00
1.50
2.00
2.50
Instantaneous on state voltage, VT - (V)
Fig.2 Maximum & minimum on-state characteristics
VTM EQUATION
VTM = A + Bln (IT) + C.IT+D.IT
Where
A = 1.07503
B = -0.0939
C = 0.000004
D = 0.01483
these values are valid for Tj = 125°C for IT 500A to 8000A
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DCR6650H42
SEMICONDUCTOR
15000
130
14000
120
13000
110
12000
180
100
11000
Maximum permissible case temperature - (ºC)
120
Mean Power Dissipation (W)
10000
9000
8000
7000
180
6000
120
5000
90
60
4000
30
3000
2000
1000
0
0
2000
4000
6000
90
90
60
80
30
70
60
50
40
30
20
10
8000
0
0
Mean on-state current, It(av) - (A)
Fig.3 On-state power dissipation – sine wave
2000
4000
6000
8000
10000
Mean on-state current, It (av) - (A)
Fig.4 Maximum permissible case temperature,
double side cooled – sine wave
15000
120
14000
180
110
13000
120
90
100
12000
90
11000
30
10000
80
Mean Power Dissipation - (W)
Maximum permissable Heatsink Temp, ºC
60
70
60
50
40
30
9000
d.c.
8000
180
120
7000
90
6000
60
30
5000
4000
3000
20
2000
10
1000
0
0
0
2000
4000
6000
8000
10000
Mean on-state current. It (av) - (A)
Fig.5 Maximum permissible heatsink temperature,
double side cooled – sine wave
0
2000
4000
6000
8000
10000
Mean on-state current, It(av) - (A)
Fig.6 On-state power dissipation – rectangular wave
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DCR6650H42
SEMICONDUCTOR
130
120
120
d.c.
180
180
120
100
120
100
90
60
90
Maximum permissable Heatsink Temp, ºC
Maximum permissible case temperature - (ºC)
110
d.c.
30
80
70
60
50
40
30
20
90
60
30
80
60
40
20
10
0
0
0
5000
10000
0
15000
5000
Mean on-state current. It
Mean on-state current, It (av) - (A)
Fig.7 Maximum permissible case temperature,
double side cooled – rectangular wave
1
Double side cooled
10
Transient Thermal Resistance (K/kW)
Anode side cooled
Double side cooled
Anode side cooled
- (A)
3
4
1.24786361
Ti (s)
0.67007122 0.14563223 0.01981569 1.28702484
Ri (°C/kW)
0.51177271 1.94595762 0.91956601 4.66635596
Ti (s)
2.89822124 0.50524092
Ti (s)
Cathode side cooled
2
Ri (°C/kW)
Cathode side cooled Ri (°C/kW)
8
(av)
15000
Fig.8 Maximum permissible heatsink temperature,
double side cooled – rectangular wave
12
0.8334561 0.60621847 1.56769894
0.0358286 10.6466908
2.41723953 1.53684913 0.62607497
4.9592331
3.44130269 0.26943359 0.02350127
10.172444
i 4
Zth  [Ri  (1  exp(T / Ti )]
i 1
6
DRth(j-c) Conduction
Tables show the increments of thermal resistance R th(j-c) when the device
operates at conduction angles other than d.c.
4
Double side cooling
DZth (z)
q°
sine.
rect.
180
0.38
0.26
120
0.44
0.37
90
0.49
0.43
60
0.54
0.49
30
0.58
0.55
15
0.60
0.58
2
0
0.001
10000
0.01
0.1
Time (s)
1
10
Anode Side Cooling
DZth (z)
q°
sine.
rect.
180 0.32
0.23
120 0.36
0.31
90
0.41
0.36
60
0.45
0.40
30
0.48
0.45
15
0.49
0.48
Cathode Sided Cooling
DZth (z)
q°
sine.
rect.
180 0.33
0.23
120 0.38
0.33
90
0.43
0.37
60
0.47
0.43
30
0.51
0.48
15
0.52
0.51
100
Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW)
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DCR6650H42
SEMICONDUCTOR
120
100
260
90
240
Peak half sine forward current, ITSM - (kA)
Peak half sine forward current, I TSM - (kA)
220
80
60
40
20
80
200
70
180
60
160
140
50
120
ITSM
I2t
100
30
80
Conditions:
Tj = 125°C
VR = 0
Half sine wave
60
40
1
10
10
Number of cycles at 50Hz
100
0
1
Fig.10 Multi-cycle surge current
10
Pulse width, tp - (ms)
0
100
Fig.11 Single-cycle surge current
20000
400
Conditions:
Tj = 125°C
Vpeak ~ 2520V
VRM ~ 1680V
snubber as appropriate to
control reverse volts
Qs max = 6762.6*(di/dt) 0.464
10000
5000
300
Conditions:
Tj = 125°C
Vpeak ~ 2520V
VRM ~ 1680V
snubber as appropriate to
control reverse volts
250
IRR max = 69.689*(di/dt) 0.7762
350
Reverse recovery current, I RR - (A)
15000
Stored charge, Qs - (uC)
20
20
0
40
I2t value - (MA2s)
Conditions:
Tj = 125°C
VR = 0
Pulse width = 10ms
100
200
150
IRR min = 41.516*(di/dt) 0.8083
100
Qs min = 2812*(di/dt) 0.531
50
0
0
0
1
2
3
4
5
6
7
8
Rate of decay of on state current, di/dt - (A/µs)
Fig.12 Stored charge
9
0
1
2
3
4
5
6
7
8
Rate of decay of on state current, di/dt - (A/µs)
9
Fig.13 Reverse recovery current
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DCR6650H42
SEMICONDUCTOR
10
9
Gate trigger voltage, V GT - (V)
8
Upper Limit
7
6
Preferred gate drive area
5
4
3
Tj = -40oC
2
Lower Limit
Tj = 25oC
Tj = 125oC
1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Gate trigger current IGT, - (A)
Fig14 Gate Characteristics
30
Lower Limit
Upper Limit
5W
25
10W
20W
Gate trigger voltage, VGT - (V)
50W
100W
20
150W
-40C
15
10
5
0
0
1
2
3
4
5
6
7
8
9
10
Gate trigger current, IGT - (A)
Fig. 15 Gate characteristics
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DCR6650H42
SEMICONDUCTOR
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Device
DCRXXXXH42
DCR6650H42
DCR5240H52
DCR5890H52
DCR4420H65
DCR4660H65
DCR3640H85
DCR3980H85
Maximum Minimum
Thickness Thickness
(mm)
(mm)
35.15
34.28
35.15
34.28
35.27
34.4
35.27
34.4
35.3
34.7
35.3
34.7
35.65
35.05
35.65
35.05
Lead length: 420mm
Lead terminal connector: M4 ring
Package outline type code:H
Fig.16 Package outline
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DCR6650H42
SEMICONDUCTOR
IMPORTANT INFORMATION:
This publication is provided for information only and not for resale.
The products and information in this publication are intended for use by appropriately trained technical personnel.
Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute
any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of
the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements
are met. Should additional product information be needed please contact Customer Service.
Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical
errors. The information is provided without any warranty or guarantee of any kind.
This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the
most up to date version and has not been superseded.
The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property.
The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or
malfunction.
The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use
protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any
electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves.
Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the
product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include
potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design
and safety precautions should always be followed to protect persons and property.
Product Status & Product Ordering:
We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for
production. The annotations are as follows:Target Information:
Preliminary Information:
No Annotation:
This is the most tentative form of information and represents a very preliminary specification.
No actual design work on the product has been started.
The product design is complete and final characterisation for volume production is in
progress.The datasheet represents the product as it is now understood but details may change.
The product has been approved for production and unless otherwise notified by Dynex any
product ordered will be supplied to the current version of the data sheet prevailing at the
time of our order acknowledgement.
All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request.
Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their
respective owners.
HEADQUARTERS OPERATIONS
CUSTOMER SERVICE
DYNEX SEMICONDUCTOR LIMITED
Doddington Road, Lincoln, Lincolnshire, LN6 3LF
United Kingdom.
Phone: +44 (0) 1522 500500
Fax:
+44 (0) 1522 500550
Web: http://www.dynexsemi.com
Phone: +44 (0) 1522 502753 / 502901
Fax:
+44 (0) 1522 500020
e-mail: power_solutions@dynexsemi.com
 Dynex Semiconductor Ltd.
Technical Documentation – Not for resale.
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