2SC5161 Transistors High voltage switching transistor (400V, 2A) 2SC5161 !External dimensions (Units : mm) 6.5±0.2 5.1+0.2 −0.1 C0.5 2.3 +0.2 −0.1 1.5 2.5 0.65±0.1 0.75 9.5±0.5 0.5±0.1 0.9 5.5 +0.3 −0.1 1.5±0.3 !Features 1) Low VCE(sat). VCE(sat)=0.15V (Typ.) (IC/IB=1A/0.2A) 2) High breakdown voltage. VCEO=400V 3) Fast switching. tf ≤1.0µs (IC=0.8A) 0.9 0.5±0.1 2.3±0.2 2.3±0.2 1.0±0.2 (1) (2) (3) !Structure Three-layer, diffused planar type NPN silicon transistor ROHM : CPT3 EIAJ : SC-63 !Absolute maximum ratings (Ta=25°C) Symbol Limits Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V IC 2 A(DC) Parameter Collector current Collector power dissipation ICP PC Unit 4 A(Pulse) 1 W 10 W(Tc=25°C) Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C ∗ Single pulse Pw=10ms ∗ (1) Base (2) Collector (3) Emitter 2SC5161 Transistors !Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Collector-base breakdown voltage BVCBO 400 − − V IC=50µA Collector-emitter breakdown voltage BVCEO 400 − − V IC=1mA Emitter-base breakdown voltage Parameter Unit Conditions BVEBO 7 − − V IE=50µA Collector cutoff current ICBO − − 10 µA VCB=400V Emitter cutoff current IEBO − − 10 µA VEB=7V Collector-emitter saturation voltage VCE(sat) − − 1 V IC/IB=1A/0.2A Base-emitter saturation voltage VBE(sat) − − 1.5 V IC/IB=1A/0.2A VCE=5V, IC=0.1A hFE 25 − 50 − Transition frequency fT − 10 − MHz Output capacitance Cob − 30 − pF VCB=10V, IE=0A, f=1MHz Turn-on time tON − − 1 µs Storage time tstg − − 2.5 µs tf − − 1 µs IC=0.8A, RL=250Ω IB1=−IB2=0.08A VCC 200V Refer to measurement circuit diagram DC current transfer ratio Fall time VCE=10V,IE=−0.1A,f=5MHz ∗1 ∗1 Measured using pulse current !Packaging specifications and hFE Package name Taping TL Code Type hFE 2SC5161 B Basic ordering unit (pieces) 2500 hFE values are classified as follows : Item B hFE 25~50 !Electrical characteristic curves 1 Ta=100°C 0.5 0.2 25°C 0.1 0.05 −25°C 0.02 0.01 0.005 1000 Tc=25°C 180mA 1.6 80mA 1.2 60mA 40mA 0.8 20mA 0.4 IB=10mA 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics 0 2 4 6 8 10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics 200 100 50 20 10 5 VCE=10V 5V 2 0 0 Ta=25°C 500 120mA DC CURRENT GAIN : hFE 2 0.002 0.001 2.0 VCE=5V COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) 10 5 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A) Fig.3 DC current gain vs. collector current ( Ι ) 5 10 2SC5161 Ta=25°C DC CURRENT GAIN : hFE 500 200 100 50 Ta=100°C 25°C −25°C 20 10 5 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 10 2 1 0.5 0.1 5 0.05 0.02 0.01 0.01 0.02 0.05 0.1 0.2 100 50 20 10 5 2 −0.5 1000 100 50 20 10 5 2 IC IB1 IB2 PW PW 50µs duty cycle≤1% IB1 IB2 90% IC ton tstg tf 2 5 10 20 50 100 Fig.8 Collector output capacitance vs. collector-base voltage RL=250Ω 10% 0.5 1 COLLECTOR TO BASE VOLTAGE : VCB (V) T.U.T. VCC IC/IB=5 5 2 1 Ta=−25°C 25°C 100°C 0.5 0.2 0.1 0.05 0.02 100°C 25°C −25°C 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) Fig.6 Collector-emitter saturation voltage vs. collector current Base-emitter saturation voltage vs. collector current 10 IC=10IB1=−10IB2 Pulse 5 2 tstg 1 0.5 tf 0.2 ton 0.1 0.05 0.02 1 0.1 0.2 !Switching characteristic measurement circuit Collector current wave form 10 200 −1 Fig.7 Gain bandwidth product vs. emitter current Base current wave form 5 Ta=25°C f=1MHz IE=0A 500 EMITTER CURRENT : IE (A) VIN 2 TURN ON TIME : ton (µs) STORAGE TIME : tstg (µs) FALL TIME : tf (µs) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) TRANSITION FREQUENCY : fT (MHz) 200 −0.001−0.002 −0.005 −0.01 −0.02 −0.05 −0.1 −0.2 1 Fig.5 Collector-emitter saturation voltage vs. collector current Ta=25°C VCE=10V 1 0.5 10 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( ΙΙ ) 500 IC/IB=10 0.2 COLLECTOR CURRENT : IC (A) 1000 Ta=25°C 5 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat ) (V) Transistors 200V 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A) Fig.9 Switching time vs. collector current 5 10