AM6612N Analog Power N-Channel 30-V (D

Analog Power
AM6612N
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
•
•
•
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
22 @ VGS = 10V
30
30 @ VGS = 4.5V
Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
Miniature SO-8 Surface Mount Package Saves
Board Space
High power and current handling capability
ID (A)
9.4
7.0
1
8
2
7
3
6
4
5
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum Units
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
±20
VGS
o
TA=25 C
a
Continuous Drain Current
o
TA=70 C
b
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
9.4
ID
IDM
±30
IS
1.6
o
TA=25 C
a
Power Dissipation
o
TA=70 C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
a
Maximum Junction-to-Case
a
Maximum Junction-to-Ambient
Symbol
t <= 5 sec
t <= 5 sec
RθJC
RθJA
A
7.4
A
3.1
PD
W
2
TJ, Tstg -55 to 150
o
Maximum
25
Units
50
C
o
o
C/W
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
January, 2004 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM6612_E
Analog Power
AM6612N
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
VGS(th)
IGSS
VDS = VGS, ID = 250 uA
Limits
Unit
Min Typ Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
A
IDSS
A
A
Forward Tranconductance
Diode Forward Voltage
±100
nA
VDS = 24 V, VGS = 0 V
1
25
uA
o
VDS = 24 V, VGS = 0 V, TJ = 55 C
ID(on)
Drain-Source On-Resistance
1
VDS = 0 V, VGS = ±20 V
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 9.2 A
VGS = 4.5 V, ID = 7 A
rDS(on)
gfs
VSD
20
A
22
30
VDS = 15 V, ID = 9.2 A
IS = 2.3 A, VGS = 0 V
mΩ
40
0.7
S
V
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
VDS = 10 V, VGS = 4.5 V,
ID = 7 A
VDD = 10 V, RL = 6 Ω , ID = 1 A,
VGEN = 10 V
IF = 2.3 A, Di/Dt = 100A/uS
4.0
1.7
1.4
16
5
23
3
41
nC
nS
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
2
January, 2004 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM6612_E
Analog Power
AM6612N
Typical Electrical Characteristics (N-Channel)
30
TA = -55oC
VDS = 5V
VGS = 10V
25
6.0V
20
5.0V
4.0V
15
3.0V
10
5
25oC
25
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
30
125oC
20
15
10
5
0
0
0
0.5
1
1.5
2
0.5
2.5
1.5
2.5
3.5
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. Body Diode Forward Voltage Variation
with Source Current and Temperature
1500
2
CAPACITANCE (pF)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.5
4.5V
1.5
6.0V
1
10V
0.5
0
5
10
15
20
25
f = 1MHz
VGS = 0 V
1200
CISS
900
600
COSS
300
CRSS
0
30
0
ID, DRAIN CURRENT (A)
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 3. On Resistance Vs Vgs Voltage
Figure 4. Capacitance Characteristics
10
1.6
8
Normalized RDS(on)
Vgs Gat e-Source Volt age ( V )
5
6
4
2
0
VGS = 10V
I D = 7A
1.4
1.2
1.0
0 .8
0 .6
0
2
4
6
8
-50
10
0
25
50
75
10 0
12 5
150
TJ Juncation Temperature (C)
Qg, Charge (nC)
Figure 5. Gate Charge Characteristics
Figure 6. On-Resistance Variation with Temperature
3
January, 2004 - Rev. A
PRELIMINARY
-2 5
Publication Order Number:
DS-AM6612_E
Analog Power
AM6612N
Typical Electrical Characteristics (N-Channel)
RDS(ON), ON-RESISTANCE (OHM)
IS, REVERSE DRAIN CURRENT (A)
100
VGS = 0V
10
o
1
TA = 125 C
o
25 C
0.1
0.01
0.001
0.0001
0.1
ID = 7 A
0.08
0.06
0.04
o
TA = 25 C
0.02
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
2
Figure 7. Transfer Characteristics
6
50
VDS = VGS
ID = -250mA
2
1.8
1.6
1.4
1.2
1
-50
-25
0
25
50
75
100 125
8
10
Figure 8. On-Resistance with Gate to Source Voltage
2.2
P(pk), PEAK TRANSIENT POWER (W)
-Vth, GATE-SOURCE THRESTHOLD
VOLTAGE (V)
4
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
150 175
SINGLE PULSE
RqJA = 125oC/W
TA = 25oC
40
30
20
10
0
0.001
0.01
TA, AMBIENT TEMPERATURE (oC)
Figure 9. Vth Gate to Source Voltage Vs Temperature
0.1
1
t1, TIME (SEC)
10
100
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1
D = 0.5
R qJ A(t) = r(t) + R qJ A
R qJ A = 125 癈/W
0.2
0.1
0.1
0.0
P (pk)
0.02
t1
t2
TJ - TA = P * R qJ A(t)
Duty C yc le , D = t1 / t2
0.01
0.01
S INGLE P ULS E
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIM E (s e c )
Figure 11. Transient Thermal Response Curve
4
January, 2004 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM6612_E
Analog Power
AM6612N
Package Information
SO-8: 8LEAD
H x 45°
5
January, 2004 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM6612_E