AM4409P Analog Power P-Channel 20-V (D

Analog Power
AM4409P
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
20 @ VGS = -4.5V
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
•
•
•
-20
ID (A)
10.2
29 @ VGS = -2.5V
8.5
54 @ VGS = -1.8V
6.2
Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
Miniature SO-8 Surface Mount Package
Saves Board Space
High power and current handling capability
1
8
2
7
3
6
4
5
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Symbol Maximum Units
Parameter
-20
VDS
Drain-Source Voltage
V
VGS
±12
Gate-Source Voltage
Continuous Drain Current
TA=25oC
a
o
TA=70 C
Pulsed Drain Currentb
a
Continuous Source Current (Diode Conduction)
10.2
ID
IDM
±30
IS
-2.3
o
TA=25 C
Power Dissipationa
o
TA=70 C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Symbol
t <= 10 sec
Steady State
RθJA
A
3.1
PD
W
2
TJ, Tstg
Operating Junction and Storage Temperature Range
A
8.2
o
C
-55 to 150
Maximum
50
92
Units
o
C/W
C/W
o
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
November, 2003 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM4409_D
Analog Power
AM4409P
SPECIFICATIONS (T A = 25oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
VGS(th)
IGSS
VDS = VGS, ID = -350 uA
Min
Limits
Unit
Typ Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
A
IDSS
ID(on)
A
Drain-Source On-Resistance
A
Forward Tranconductance
Diode Forward Voltage
rDS(on)
gfs
VSD
-0.7
VDS = 0 V, VGS = ±12 V
±100
nA
VDS = -16 V, VGS = 0 V
-1
-10
uA
o
VDS = -16 V, VGS = 0 V, TJ = 55 C
VDS = -5 V, VGS = -4.5 V
VGS = -4.5 V, ID = -10.2 A
VGS = -2.5 V, ID = -8.5 A
VGS = -1.8 V, ID = -6.2 A
-20
A
20
29
54
VDS = -10 V, ID = -10.2 A
IS = -2.3 A, VGS = 0 V
mΩ
36
-0.8
S
V
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = -10 V, VGS = -5 V,
ID = -10.2 A
VDD = -10 V, RL = 15 Ω , ID = -1 A,
VGEN = -5 V, RG = 6Ω
30
4
8.3
25
45
150
70
nC
nS
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
2
November, 2003 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM4409_D
Analog Power
AM4409P
Typical Electrical Characteristics (P-Channel)
50
50
o
-2.5V
o
TA = -55 C
40
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
VGS = -4.5V -3.0V
-2.0V
30
20
-1.5V
10
25 C
40
o
125 C
30
20
10
0
0
0.5
0
0.5
1
1.5
2
2.5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
3
1
3.5
2
2.5
3
Figure 2. Transfer Characteristics
Figure 1. Output Characteristics
4000
2.2
2
3200
VGS = - 2.0V
1.8
CAPACITANCE (pF)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.5
-VGS, GATE TO SOURCE VOLTAGE (V)
1.6
1.4
-2.5V
1.2
-4.5V
CISS
2400
1600
COSS
800
1
CRSS
0.8
0
0
10
20
30
-ID, DRAIN CURRENT (A)
40
50
0
5
10
15
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 3. On Resistance vs. Drain Current
Figure 4. Capacitance
5
V DS =
-1 0V
4
DRAIN-SOURCE ON-RESISTANCE
1.6
ID = -8 A
ID = -10.2A
VGS = - 4.5V
1.4
-1 5V
RDS(ON), NORMALIZED
-VGS, GATE-SOURCE VOLTAGE (V)
20
3
2
1.2
1
0.8
1
0.6
0
0
6
12
18
Q g , G A T E C H A R G E (n C )
24
-50
30
Figure 5. Gate Charge
0
25
50
75
100
125
T J, JUNCTION TEMPERATURE (oC)
150
175
Figure 6. On-Resistance vs. Junction Temperature
3
November, 2003 - Rev. A
PRELIMINARY
-25
Publication Order Number:
DS-AM4409_D
Analog Power
AM4409P
Typical Electrical Characteristics (N-Channel)
-5A. 25d
0.055
RDS(ON), ON-RESISTANCE (OHM)
-IS, REVERSE DRAIN CURRENT (A)
10
1
o
TA = 125 C
0.1
o
25 C
0.01
0.001
ID = 0.045
0.035
0.025
o
TA = 25 C
0.015
0.005
0.0001
1
0
0.2
0.4
0.6
0.8
2
3
4
-VGS, GATE TO SOURCE VOLTAGE (V)
1
5
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Source-Drain Diode Forward Voltage
Figure 8. On-Resistance vs. Gate-to-Source Voltage
50
100µ
RDS(ON) LIMIT
-ID, DRAIN CURRENT (A)
P(pk), PEAK TRANSIENT POWER (W)
100
1ms
10
10ms
100ms
1s
10s
DC
1
VGS = -4.5V
SINGLE PULSE
0.1
o
RθJA = 125 C/W
o
TA = 25 C
0.01
0.1
1
10
40
30
20
10
0
0.001
100
0.01
0.1
-VDS, DRAIN-SOURCE VOLTAGE (V)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
Figure 9. Safe Operating Area
1
t1, TIME (sec)
10
100
1000
Figure 10. Single Pulse Power, Junction-to-Ambient
1
D = 0.5
RθJA(t) = r(t) + RθJA
o
0.2
0.1
RθJA = 125 C/W
0.1
P(pk)
0.05
t1
0.02
0.01
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Normalized Thermal Transient Impedance, Junction-to-Ambient
4
November, 2003 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM4409_D
Analog Power
AM4409P
Package Information
SO-8: 8LEAD
H x 45°
5
November, 2003 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM4409_D