Data Sheet Switching Diode DA227 Land size figure (Unit : mm) 0.6 (3) 0.15±0.05 1.25±0.1 (2) 0.05 2.1±0.1 Features 1) Small mold type. (UMD4) 2) High reliability. 0.9MIN. 0.7 2.0±0.2 各リードとも 0.25± 0.1 0.05 Each lead has same dimension 同寸法 1.3 0.1Min 0～0.1 (4) (1) 0.65 UMD4 0.65 0.7 1.3±0.1 Construction Silicon epitaxial planar 1.6 Dimensions (Unit : mm) Applications Ultra high speed switching 0.9±0.1 Structure ROHM : UMD4 JEDEC : SOT-343 JEITA : SC-82 dot (year week factory) 1Pin Mark Taping specifications (Unit : mm) φ1.55±0.05 2.0±0.05 0.3±0.1 Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) VRM VR Reverse voltage (DC) IFM Forward current (Single) Average rectified forward current (Single) Io Isurge Surge current (t=1us) Power dissipation Pd Junction temperature Tj Storage temperature Tstg Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage φ1.1±0.1 4.0±0.1 2.2±0.1 Limits 2.4±0.1 8.0±0.2 0～0.5 5.5±0.2 2.45±0.1 2.4±0.1 3.5±0.05 1.75±0.1 4.0±0.1 1.15±0.1 Unit V V mA mA A mW °C °C 80 80 300 100 4 150 150 55 to 150 Min. Typ. Max. Unit Conditions IF=100mA - - 1.2 V Reverse current IR - - 0.1 μA VR=70V Capacitance between terminals Reverse recovery time Ct - - 3.5 pF trr - - 4 ns VR=6V , f=1MHz VR=6V , IF=5mA , RL=50Ω www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.06 - Rev.A Ta=150℃ 10000 Ta=75℃ Ta=-25℃ 1 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=150℃ 0.1 Ta=75℃ 100 Ta=25℃ 10 Ta=-25℃ 1 0.1 100 200 300 400 500 600 700 800 900 1000 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10 20 30 40 50 60 70 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0 80 REVERSE CURRENT:IR(nA) 940 Ta=25℃ VR=80V n=10pcs 90 930 920 910 AVE:921.7mV 900 80 9 70 60 50 40 AVE:9.655nA 30 20 7 6 5 4 3 1 0 0 Ct DISPERSION MAP IR DISPERSION MAP 1cyc Ifsm 8.3ms 10 5 AVE:3.50A 0 5 Ta=25℃ VR=6V IF=5mA RL=50Ω n=10pcs 9 8 7 PEAK SURGE FORWARD CURRENT:IFSM(A) REVERSE RECOVERY TIME:trr(ns) 10 15 6 5 4 3 2 1 Ifsm 4 8.3ms 8.3ms 1cyc 3 2 1 AVE:1.93ns 0 0 1 IFSM DISRESION MAP trr DISPERSION MAP 10 1 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board IM=1mA 10 1ms IF=10mA time 8 7 6 5 3 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 2/2 AVE:0.97kV 2 0 0.01 AVE:2.54kV 4 1 300us 1 0.001 100 9 ELECTROSTATIC DISCHARGE TEST ESD(KV) t TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 10 1000 100 AVE:1.17pF 2 10 VF DISPERSION MAP 20 20 Ta=25℃ VR=6V f=1MHz n=10pcs 8 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=100mA n=30pcs 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 10 100 950 1 0.1 0.01 0 FORWARD VOLTAGE:VF(mV) 10 1000 Ta=25℃ 10 Ta=125℃ f=1MHz Ta=125℃ REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) 100 PEAK SURGE FORWARD CURRENT:IFSM(A) Data Sheet DA227 1000 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 2011.06 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A