ROHM RB068L100TE25

Data Sheet
Schottky Barrier Diode
RB068L100
lDimensions (Unit : mm)
lApplications
General rectification
lLand size figure (Unit : mm)
2.0
①
②
4.2
0.1±0.02
0.1
5.0±0.3
2
1.2±0.3
2
4.5±0.2
lFeatures
1)Small power mold type. (PMDS)
2)High reliability.
3)Low IR.
2.0
2.6±0.2
4)AEC-Q101 qualified
PMDS
2.0±0.2
1.5±0.2
lConstruction
Silicon epitaxial planer
lStructure
ROHM : PMDS
JEDEC : SOD-106
Manufacture Date
①
②
lTaping dimensions (Unit : mm)
2.0±0.05
φ 1.55±0.05
0.3
12±0.2
5.5±0.05
5.3±0.1
0.05
9.5±0.1
1.75±0.1
4.0±0.1
φ 1.55
2.9±0.1
4.0±0.1
2.8MAX
lAbsolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
VRM
Reverse voltage (repetitive)
100
VR
Reverse voltage (DC)
100
Average rectified forward current (*1)
2
Io
IFSM
Forward current surge peak (60Hz・1cyc)
60
Junction temperature
150
Tj
Storage temperature
-40 to +150
Tstg
(*1)Mounted on epoxy board,60Hz half sine wave, Tc=83°C Max.
lElectrical characteristics (Ta=25C)
Parameter
Symbol
VF
Forward voltage
Reverse current
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© 2012 ROHM Co., Ltd. All rights reserved.
IR
Unit
V
V
A
A
C
C
Min.
Typ.
Max.
-
-
0.80
V
-
-
50
μA
1/4
Unit
Conditions
IF=2.0A
VR=100V
2012.08 - Rev.B
1000
10
Tj=150°C
Tj=150°C
100
REVERSE CURRENT:IR(mA)
1
FORWARD CURRENT:IF(A)
Data Sheet
RB068L100
Tj=125°C
Tj=75°C
0.1
Tj=25°C
0.01
10
Tj=75°C
Tj=125°C
1
Tj=25°C
0.1
Tj=-40°C
0.01
Tj=-40°C
0.001
0
200
400
600
0.001
800
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
60
80
100
100
760
740
720
700
680
660
640
620
0
5
10
15
20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
25
Tj=25°C
IF=2.0A
n=20pcs
780
FORWARD VOLTAGE:VF(mV)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
40
800
f=1MHz
AVE:660.3mV
600
30
VF DISPERSION MAP
500
10000
Tj=25°C
VR=100V
n=20pcs
1000
Tj=25°C
f=1MHz
VR=0V
n=10pcs
480
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
20
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
1000
10
0
460
440
420
400
380
360
AVE:406pF
340
AVE:312.0nA
320
100
300
Ct DISPERSION MAP
IR DISPERSION MAP
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© 2012 ROHM Co., Ltd. All rights reserved.
2/4
2012.08 - Rev.B
Data Sheet
RB068L100
30
300
IF=0.5A
IR=1.0A
Irr=0.25×IR
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
280
260
240
220
AVE:238.5A
200
180
160
IFSM
140
8.3ms
120
25
20
15
10
5
AVE:7.7ns
1cyc
100
0
IFSM DISPERSION MAP
trr DISPERSION MAP
1000
1000
IFSM
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
8.3ms 8.3ms
1cyc
100
10
1
1
10
100
10
1
100
1
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1000
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
D.C.
Rth(j-a)
100
Rth(j-c)
10
D=1/2
1.5
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THAERMAL IMPEDANCE:Rth (°C/W)
100
2
On glass-epoxy substrate
1
0.1
0.001
t
Sin(θ＝180)
1
0.5
0.01
0.1
1
10
100
0
1000
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© 2012 ROHM Co., Ltd. All rights reserved.
0
1
2
3
4
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
3/4
2012.08 - Rev.B
Data Sheet
RB068L100
5
0.1
REVERSE POWER
DISSIPATION:PR (W)
0.08
0.06
D.C.
0.04
0.02
0
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0A
0V
Sin(θ＝180)
20
40
60
80
t
T
D.C.
D=t/T
VR=50V
Tj=150°C
3
D=1/2
2
Sin(θ＝180)
1
D=1/2
0
4
Io
VR
0
100
0
50
100
150
CASE TEMPERATURE:Tc(°C)
DERATING CURVE(Io-Tc)
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
30
No break at 30kV
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
25
20
15
AVE:9.2kV
10
5
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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© 2012 ROHM Co., Ltd. All rights reserved.
4/4
2012.08 - Rev.B
Notice
Notes
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
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However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specified herein is intended only to show the typical functions of and
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© 2012 ROHM Co., Ltd. All rights reserved.
R1120A