ROHM 1SS355_11

Switching Diode
1SS355
Dimensions (Unit : mm)
Applications
High speed switching
Land size figure (Unit : mm)
0.1±0.1
0.05
0.8MIN.
1.25±0.1
2.5±0.2
1.7±0.1
2.1
Features
1)Ultra small mold type. (UMD2)
2)High reliability
0.9MIN.
UMD2
Construction
Silicon epitaxial planar
Structure
0.7±0.2
0.1
0.3±0.05
ROHM : UMD2
JEDEC : SOD-323
JEITA : SC-90/A
dot (year week factory)
Taping dimensions (Unit : mm)
φ1.55±0.05
2.0±0.05
0.3±0.1
4.0±0.1
1.40±0.1
2.8±0.1
2.75
8.0±0.2
3.5±0.05
1.75±0.1
4.0±0.1
φ1.05
1.0±0.1
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
VRM
Reverse voltage (repetitive peak)
VR
Reverse voltage (DC)
IFM
Forward current
Average rectified forward current
Io
Isurge
Surge current (t=1s)
Junction temperature
Tj
Storage temperature
Tstg
Electrical characteristics (Ta=25C)
Parameter
Symbol
VF
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
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©2011 ROHM Co., Ltd. All rights reserved.
Limits
Unit
V
V
mA
mA
mA
C
C
90
80
225
100
500
150
55 to 150
Min.
Typ.
Max.
Unit
-
-
1.2
V
Conditions
IF=100mA
IR
-
-
0.1
μA
VR=80V
Ct
-
-
3
pF
trr
-
-
4
ns
VR=0.5V , f=1MHz
VR=6V , IF=10mA , RL=100Ω
1/3
2011.08 - Rev.D
10000
10
1000
Ta=75℃
Ta=25℃
1
Ta=25℃
Ta=75℃
100
Ta=25℃
10
Ta=25℃
1
0
40
60
80
100
0
120
REVERSE CURRENT : IR(nA)
Ta=25
IF=100mA
n=30pcs
890
880
AVE:885.9mV
100
1
90
0.99
Ta=25℃
VR=80V
n=30pcs
80
70
60
50
40
30
20
860
0.95
10
AVE:13.6A
0
0.93
0.92
0.91
Ct DISPERSION MAP
20
Ta=25℃
VR=6V
IF=10mA
RL=100Ω
2.5
2
1.5
1
AVE:1.3ns
0.5
Ifsm
0
8.3ms
15
10
5
0.1
1
trr DISPERSION MAP
1
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
100
100
Rth(j-c)
Mounted on epoxy board
IM=1mA
10
1ms
IF=10mA
REVERSE POWER
DISSIPATION:PR (W)
10
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
t
100
0.001
Rth(j-a)
Ifsm
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1000
100
8.3ms
1cyc
0
IFSM DISRESION MAP
0.1
AVE:0.961pF
0.94
PEAK SURGE
FORWARD CURRENT : I FSM(A)
REVERSE RECOVERY TIME:trr(ns)
8.3ms
30
0.96
3
1cyc
25
Ta=25℃
VR=0V
f=1MHz
n=10pcs
IR DISPERSION MAP
Ifsm
20
0.9
VF DISPERSION MAP
20
15
0.97
0
5
10
0.98
AVE:31.7nA
10
15
5
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
910
870
20
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE : VF(V)
VF-IF CHARACTERISTICS
900
1
0.1
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
FORWARD VOLTAGE : V F(mA)
f=1MHz
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=125℃
0.1
PEAK SURGE
FORWARD CURRENT : I FSM(A)
10
Ta=125℃
REVERSE CURRENT : IR(nA)
FORWARD CURRENT : I F(mA)
100
PEAK SURGE
FORWARD CURRENT : I FSM(A)
Data Sheet
1SS355
0.0005
D=1/2
DC
Sin(θ＝180)
time
300us
1
0.001
0
0.01
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
2/3
100
1000
0
20
40
60
80
100
120
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
2011.08 - Rev.D
0.20
0.2
20
D=1/2
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0.15
Sin(θ＝180)
0.1
Io
0A
0.05
0V
VR
t
T
0
0
25
50
D=t/T
VR=40V
Tj=150℃
75
ELECTROSTATIC
DDISCHARGE TEST ESD(KV)
DC
DC
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Data Sheet
1SS355
0.15
D=1/2
Sin(θ＝180)
0.10
0.05
0A
Io
0V
VR
t
T
D=t/T
VR=40V
Tj=150℃
0.00
100
125
AMBIENT TEMPERATURE : Ta(℃)
Derating Curve (Io-Ta)
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© 2011 ROHM Co., Ltd. All rights reserved.
150
15
AVE:9.4kV
10
5
0
0
25
50
75
100
CASE TEMPARATURE:Tc(℃)
Derating Curve (Io-Tc)
3/3
125
150
AVE:2.4kV
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
2011.08 - Rev.D
Notice
Notes
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illustrate the standard usage and operations of the Products. The peripheral conditions must
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R1120A