Freescale Semiconductor Technical Data Available at http://www.freescale.com. Go to Support/ Reference Designs/Networking and Communications Rev. 2, 12/2005 N - Channel Enhancement - Mode Lateral MOSFETs Device Characteristics (From Device Data Sheet) Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • Typical Performance at 945 MHz, 28 Volts Output Power — 45 Watts PEP Power Gain — 19 dB Efficiency — 41% (Two Tones) IMD — - 31 dBc • Integrated ESD Protection • Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz, 45 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Dual - Lead Boltdown Plastic Package Can Also Be Used As Surface Mount. • N Suffix Indicates Lead - Free Terminations • 200_C Capable Plastic Package Reference Design Characteristics • Typical GSM Performance at 960 MHz, 28 Volts and IDQ = 350 mA, Full Frequency Band • Typical Performance for GSM Frequencies, 925 to 960 MHz, 28 Volts Output Power @ P1db — 50 Watts Power Gain @ P1db — 18.6 dB Efficiency @ P1db — 54% MRF9045NR1 MRF9045NBR1 MRF9045MR1 MRF9045MBR1 GSM/GSM EDGE GSM/GSM EDGE 920 - 960 MHz VGG VDD BIAS RF Power Field Effect Transistors BIAS RF Reference Design Library RF INPUT RF OUTPUT MATCH MATCH MRF9045N(M) GSM/GSM EDGE 920 - 960 MHz REFERENCE DESIGN Designed by: Darin Wagner This reference design is designed to demonstrate the typical RF performance characteristics of the MRF9045N(M) when applied for the GSM/GSM EDGE 920-960 MHz frequency band. The reference design is tuned to offer the best tradeoff between good EDGE linearity and good GSM power capability and efficiency. It is biased at VDD = 28 Volts and I DQ = 350 mA, but data are given to derive the performances under different biasing and temperature conditions. REFERENCE DESIGN LIBRARY TERMS AND CONDITIONS Freescale is pleased to make this reference design avail- Freescale Semiconductor, Inc., 2005. All rights reserved. MRF9045NR1 RF Reference Design Data Freescale Semiconductor able for your use in development and testing of your own product or products, without charge. The reference design contains easy - to - copy, fully functional amplifier designs. Where possible, it consists of “no tune” distributed element matching circuits designed to be as small as possible, includes temperature compensated bias circuitry, and is designed to be used as “building blocks” for our customers. HEATSINKING When operating this fixture please provide adequate heatsinking for the device. Excessive heating of the device will prevent repeating of the included measurements. MRF9045NBR1 MRF9045MR1 MRF9045MBR1 GSM/GSM EDGE 1 EDGE NONLINEAR SIMULATION The Enhanced Data rate through GSM Evolution aims at increasing the user data rate by using an 8PSK modulation scheme. This nonconstant envelope signal description and the corresponding BTS specifications are found in the following standards documents: • GSM 05.04: “Digital Cellular Telecommunications System (Phase 2+); Modulation.” • 3GPP TS 45.005 V5.0.0 (2001 - 06): “Digital Cellular Telecommunications Systems (Phase 2+); Radio Transmission and Reception (Release 5). To aid the design process and help reduce time to market for our customers, Freescale provides device models for several commercially available harmonic balance simulators. Our model Library is available for all major computer platforms supported by these simulators. For details on the RF model library and supported harmonic balance simulators, go to the following url: http://www.freescale.com/rf/models MRF9045NR1 MRF9045NBR1 MRF9045MR1 MRF9045MBR1 GSM/GSM EDGE 2 RF Reference Design Data Freescale Semiconductor R3 U1 R1 + RF INPUT IN C16 C15 C14 Q1 Z12 C1 Z2 Z3 Z4 C2 C3 Z1 Z2 Z3 Z4 Z5 Z6 0.044″ 0.069″ 0.178″ 0.178″ 0.348″ 0.424″ DUT Z5 C4 x 0.174″ x 0.490″ x 0.521″ x 0.348″ x 0.615″ x 0.174″ C13 + VDD R4 C12 C9 C10 C11 Z11 R2 Z1 OUT B1 Z6 Z7 C5 Microstrip Microstrip Microstrip x 0.147″ Taper Microstrip Microstrip Z7 Z8 Z9 Z10 Z11 Z12 Z8 Z9 C6 C7 0.044″ 0.044″ 0.044″ 0.044″ 0.044″ 0.044″ C8 x 0.465″ x 0.215″ x 0.418″ x 0.204″ x 0.895″ x 0.821″ RF OUTPUT Z10 R5 Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Figure 1. MRF9045N(M) Test Circuit Schematic Table 1. MRF9045N(M) Test Circuit Component Designations and Values Designators Description B1 Short Ferrite Bead C1, C8, C9, C14 43 pF Chip Capacitors, A Case, ACCU - P C2 4.7 pF Chip Capacitor, B Case, AVX C3 5.1 pF Chip Capacitor, B Case, AVX C4 16 pF Chip Capacitor, B Case, AVX C5, C12 10 pF Chip Capacitors, B Case, AVX C6, C7 2.2 pF Chip Capacitors, B Case, AVX C10, C13, C15 0.1 µF Chip Capacitors, B Case C11, C16 22 µF Tantalum Capacitors Q1 PNP General Purpose Transistor, #BC857ALT1 R1 3.92 Ω Chip Resistor (0805) R2 10 Ω Chip Resistor (0805) R3, R5 2.2 Ω Chip Resistors (0805) R4 5 Ω Potentiometer U1 Power Voltage Regulator, #LP2951 MRF9045NR1 MRF9045NBR1 MRF9045MR1 MRF9045MBR1 GSM/GSM EDGE RF Reference Design Data Freescale Semiconductor 3 B1 U1 R3 R4 C13 R1 C16 R5 C11 Q1 C15 C10 C9 C14 C12 R2 C1 C2 C5 C3 C6 C7 C8 C4 MRF9045M Rev RD03 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF9045N(M) Test Circuit Component Layout MRF9045NR1 MRF9045NBR1 MRF9045MR1 MRF9045MBR1 GSM/GSM EDGE 4 RF Reference Design Data Freescale Semiconductor CHARACTERISTICS 20 19.5 550 mA 19 450 mA Gps 50 19 40 h 18.5 18.5 350 mA 18 30 18 20 VDD = 28 Vdc IDQ = 550 mA f = 945 MHz 17.5 VDD = 28 Vdc f = 945 MHz 17.5 17 1 10 100 1 10 Pout, OUTPUT POWER (WATTS) CW 30 50 0 60 Figure 4. Power Gain and Drain Efficiency versus Output Power 60 −8 h 55 −9 50 −10 45 −11 IRL 40 −12 VDD = 28 Vdc Pout = 50 W IDQ = 575 mA 35 30 25 −13 −14 −15 Gps 20 −16 15 10 915 40 Pout, OUTPUT POWER (WATTS) CW Figure 3. Power Gain versus Output Power G ps , POWER GAIN (dB) h, DRAIN EFFICIENCY (%) 20 10 IRL, INPUT RETURN LOSS (dB) 17 60 19.5 650 mA G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) 20 IDQ = 750 mA h, DRAIN EFFICIENCY (%) 20.5 −17 920 925 930 935 940 945 950 955 960 −18 965 f, FREQUENCY (MHz) Figure 5. CW Performance MRF9045NR1 MRF9045NBR1 MRF9045MR1 MRF9045MBR1 GSM/GSM EDGE RF Reference Design Data Freescale Semiconductor 5 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2005. All rights reserved. MRF9045NR1 MRF9045NBR1 MRF9045MR1 MRF9045MBR1 GSM/GSM EDGE Rev. 2, 12/2005 6 RF Reference Design Data Freescale Semiconductor