bl galaxy electrical 1n914,1n914a,1n914b

BL
GALAXY ELECTRICAL
1N914,1N914A,1N914B
REVERSE VOLTAGE:
SMALL SIGNAL SWITCHING DIODE
75 V
CURRENT: 75 mA
FEATURES
DO - 35
◇ Glass sealed envelope. (MSD)
◇ VRM=100V guaranteed
◇ High reliability
MECHANICAL DATA
◇ Case: DO-35, glass case
◇ Polarity: Color band denotes cathode
Dimensions in millimeters
◇ Weight: 0.004 ounces, 0.13 grams
MAXIMUM RATINGS (Ratings at 25℃ambient temperature unless otherwise specified.)
Maximum DC reverse voltage
Maximum recurrent peak reverse voltage
Average forward rectified current
half wave rectification with resistive load
t<1ms
t=1ms
t=1s
Power dissipation (note)
Junction temperature
Storage temperature range
1N914,1N914A,1N914B
UNITS
VR
VRM
75
100
V
V
IO
75
mA
4.0
1.0
0.5
250
175
- 65 --- + 175
Forward surge current
IFSM
Ptot
Tj
TSTG
A
mW
℃
℃
Note:Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
ELECTRICAL CHARACTERISTICS (Ratings at 25℃ambient temperature unless otherwise specified.)
Min
Typ
Max
Ctot
0.62
-
-
1.0
0.72
1.0
25
5
50
4
nA
µA
µA
pF
trr
-
-
8
ns
Vfr
-
-
2.5
V
RθjA
-
-
500
Forw ard voltage @1N914,1N914A,I F=10mA
1N914B,I F=5mA
VF
1N914B,I F=100mA
Leakage current
@V R=20V
@V R=75V
IR
@V R=20V,Tj=150℃
Capacitance
@ V R=0V,f=1MHZ
Reverse recovery time @I F=10mA,IR=10mA,
RL=100Ω,measured at I R=1mA
Voltage rise w hen sw itching on
tested w ith 50mA pulses t r=20ns
Thermal resistance junction to ambient (note )
Note:Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Document Number 0268015
BLGALAXY ELECTRICAL
UNITS
V
℃/W
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1.
RATINGS AND CHARACTERISTIC CURVES
1N914,1N914A,1N914B
FIG.1 -- ADMISSIBLE POWER DISSIPATION
NNNNNN VERSUS AMBIENT TEMPERATURE
FIG.2 -- FORWARD CHARACTERISTICS
mA
mW
10
500
3
450
10 2
400
Ptot
350
IF
300
1N914B
10
1N914,1N914A
250
1
200
150
10
100
-1
50
0
0
100
10 -2
200℃
1
0
TA
VF
2V
FIG.3 -- ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
A
100
V=tp/T
IFSM
10
tp
n=0
0.1
0.2
0.5
1
T=1/fp
IFSM
T
0.1
10
-5
10
-3
10
-2
10
-1
1
10S
tp
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Document Number 0268015
BLGALAXY ELECTRICAL
2.
RATINGS AND CHARACTERISTIC CURVES
FIG.4 -- RECTIFICATION EFFICIENCY
JJJJJJJJMEASUREMENT CIRCUIT
1N914,1N914A,1N914B
FIG.5 -- RELATIVE CAPACITANCE VERSUS
JJJJJJJJJJJJJJ
VOLTAGE
1.1
D.U.T.
60
TJ=25
f=1MHz
1.0
VRF=2V
2nF
5K
VO
Ctot(VR)
Ctot(OV)
0.9
0.8
0.7
0
2
4
6
8
10V
VR
FIG.6 -- LEAKAGE CURRENT VERSUS JUNCTION
TEMPERATUREFF
FIG.7 -- DYNAMIC FORWARD RESISTANCE
FFFVERSUS FORWARD CURRENT
nA
10
10 4
4
TJ=25℃
f=1KHz
10 3
r
10 2
10
3
10
2
F
10
10
VR=20V
1
1
0
100
10
200℃
-2
10
-1
1
10
IF
10
2
mA
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Document Number 0268015
BLGALAXY ELECTRICAL
3.