BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor CXT5551 FEATURES z Switching and amplification in high voltage. z Low current(max. 600mA) z High voltage (max. 180V) Pb Lead-free APPLICATIONS z High voltage amplifier application. SOT-89 ORDERING INFORMATION Type No. Marking Package Code CXT5551 1G6 SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 600 mA PC Collector Dissipation 1.2 W RθJA Thermal resistance 104 ℃/W Tj,Tstg Junction and Storage Temperature -55~150 ℃ Document number: BL/SSSTG059 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor CXT5551 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 180 V Collector-emitter breakdown voltage V(BR)CEO IC=1.0mA,IB=0 160 V Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 6 V Collector cut-off current ICBO VCB=120V,IE=0 50 nA Emitter cut-off current IEBO VEB=4V,IC=0 50 nA DC current gain hFE VCE=5V,IC=1mA VCE=5V,IC=10mA VCE=5V,IC=50mA Collector-emitter saturation voltage VCE(sat) IC=10mA, IB= 1mA IC=50mA, IB= 5mA 0.15 0.20 V Base-emitter saturation voltage VBE(sat) IC=10mA, IB= 1mA IC=50mA, IB= 5mA 1.0 1.0 V Transition frequency fT VCE=10V, IC= 10mA, f=100MHz 300 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 6.0 pF Small-signal current gain hfe IC=1mA,VCE=10V, f=1.0kHz Noise Figure NF IC=0.25mA,VCE=5V, f=1.0kHz,RS=1.0kΩ 80 80 30 100 50 TYP MAX UNIT 250 200 8 dB TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTG059 Rev.A www.galaxycn.com 2 BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor CXT5551 PACKAGE OUTLINE Plastic surface mounted package SOT-89 SOT-89 Dim Min Max A 4.5 4.7 B 2.3 2.7 C 1.5Typical D 0.35 0.55 E 1.4 1.6 F 0.4 0.6 H 1.55 1.75 J K 0.4Typical 4.15 4.25 All Dimensions in mm Document number: BL/SSSTG059 Rev.A www.galaxycn.com 3 BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor CXT5551 SOLDERING FOOTPRINT Unit:mm PACKAGE INFORMATION Device Package Shipping DXT5551 SOT-89 1000/Tape&Reel Document number: BL/SSSTG059 Rev.A www.galaxycn.com 4