BL Galaxy Electrical NPN medium power Transistor BC868

BL Galaxy Electrical
Production specification
NPN medium power Transistor
BC868
FEATURES
z
Two current gain selections.
z
High current.
Pb
Lead-free
APPLICATIONS
z
General purpose switching and amplification.
z
Power applications such as audio output stages.
z
Complememt to BC869
SOT-89
ORDERING INFORMATION
Type No.
BC868
Marking
Package Code
CAC/CBC/CCC/CDC
SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
32
V
VCEO
Collector-Emitter Voltage
20
V
VEBO
Emitter-Base Voltage
5
V
IC
DC Collector Current
1
A
ICM
Peak Collector Current
2
A
IBM
Peak base current
200
mA
Ptot
Total power dissipation
1.35
W
Tj,Tstg
Junction and Storage Temperature
-65 to+150
℃
Document number: BL/SSSTG066
Rev.A
Tamb≤25℃
www.galaxycn.com
1
BL Galaxy Electrical
Production specification
NPN medium power Transistor
BC868
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
VCE=5V IC=0
DC current gain
hFE
VCE=10V IC=5mA
VCE=1V IC=500mA
VCE=1V IC=1A
Collector-emitter saturation voltage
VCE(sat)
IC=1A IB=100mA
Base-emitter voltage
VBE
IC=1A ,VCE=1V
Transition frequency
fT
VCE=5V, IC=1A,
f=100MHz
MIN
MAX
UNIT
VCB=25V IE=0
100
nA
VCB=25V IE=0,TA=150℃
10
μA
100
nA
50
85
60
40
375
0.5
V
1
V
MHz
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTG066
Rev.A
www.galaxycn.com
2
BL Galaxy Electrical
Production specification
NPN medium power Transistor
BC868
PACKAGE OUTLINE
Plastic surface mounted package
SOT-89
SOT-89
Dim
Min
Max
A
4.5
4.7
B
2.3
2.7
C
1.5Typical
D
0.35
0.55
E
1.4
1.6
F
0.4
0.6
H
1.55
1.75
J
K
0.4Typical
4.15
4.25
All Dimensions in mm
SOLDERING FOOTPRINT
Unit:mm
PACKAGE
INFORMATION
Device
Package
Shipping
BC868
SOT-89
1000/Tape&Reel
Document number: BL/SSSTG066
Rev.A
www.galaxycn.com
3