Data Sheet 10V Drive Nch MOSFET RCD100N20 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) CPT3 6.5 5.1 2.3 0.5 0.9 1.5 5.5 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple. 5) Parallel use is easy. 9.5 1.5 (SC-63) <SOT-428> 2.5 0.75 (1) (2) (3) 0.8Min. 0.65 0.9 2.3 2.3 0.5 1.0 Application Switching Packaging specifications Package Code Basic ordering unit (pieces) RCD100N20 Type Inner circuit Taping TL 2500 Absolute maximum ratings (Ta = 25C) Symbol Parameter ∗1 (1) Gate (2) Drain (3) Source Limits Unit Drain-source voltage VDSS Gate-source voltage VGSS 200 30 V V Continuous Pulsed Continuous ID IDP IS *3 *1 10 40 10 A A A Pulsed ISP *1 40 A 5 7.35 A mJ Drain current Source current (Body Diode) Power dissipation IAS *2 EAS *2 PD *4 Channel temperature Range of storage temperature Tch Tstg Avalanche current Avalanche energy 20 W 150 55 to 150 C C Limits 6.25 Unit C / W (1) (2) (3) 1 BODY DIODE *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25, T ch=25C *3 Limited only by maximum channel temperature allowed. *4 TC=25C Thermal resistance Parameter Channel to Case Symbol Rth (ch-c)* * T C=25°C * Limited only by maximum channel temperature allowed. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.10 - Rev.A Data Sheet RCD100N20 Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Min. Typ. Max. Unit - - 100 nA VGS=30V, VDS=0V 200 - - V ID=1mA, VGS=0V IGSS Drain-source breakdown voltage V(BR)DSS Conditions IDSS - - 10 A VDS=200V, VGS=0V VGS (th) 3.25 - 5.25 V VDS=10V, ID=1mA RDS (on)* - 140 182 l Yfs l* 2.1 4.2 - S VDS=10V, ID=5A Input capacitance Ciss - 1400 - pF VDS=25V Output capacitance Coss - 95 - pF VGS=0V Reverse transfer capacitance Crss - 45 - pF f=1MHz Turn-on delay time td(on) * tr * - 25 - ns VDD 100V, ID=5A - 35 - ns VGS=10V td(off) * tf * - 40 - ns RL=20 - 15 - ns RG=10 Qg * Qgs * Qgd * - 25 - nC VDD 100V, ID=10A - 9 9 - nC nC VGS=10V Min. Typ. Max. - - 1.5 Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge m ID=5A, VGS=10V *Pulsed Body diode characteristics (Source-Drain) Parameter Forward Voltage Symbol VSD * Unit Conditions V Is=10A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.10 - Rev.A Data Sheet RCD100N20 Electrical characteristic curves (Ta=25C) Fig.2 Typical Output Characteristics (Ⅱ) Fig.1 Typical Output Characteristics (Ⅰ) 5 10 Ta=25°C Pulsed Ta=25°C Pulsed VGS=10.0V VGS=10.0V VGS=8.0V 4 VGS=8.0V 8 VGS=7.0V Drain Current : ID [A] Drain Current : ID [A] VGS=7.0V 3 VGS=6.5V 2 VGS=6.0V 1 6 VGS=6.5V 4 VGS=6.0V 2 VGS=5.5V VGS=5.5V 0 0 0 0.2 0.4 0.6 0.8 1 0 2 Drain-Source Voltage : VDS [V] 4 6 8 Fig.4 Gate Threshold Voltage vs. Channel Temperature Fig.3 Typical Transfer Characteristics 100 5 VDS=10V pulsed VDS=10V ID=1mA pulsed Gate Threshold Voltage : VGS(th) [V] Drain Currnt : ID [A] 10 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1 0.1 0.01 0.001 4 3 2 1 0 1 2 3 4 5 6 7 8 9 10 -50 -25 0 Gate-Source Voltage : VGS [V] 25 50 75 100 125 150 Channel Temperature : Tch [℃] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature 1 0.35 VGS=10V pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C VGS=10V pulsed Static Drain-Source On-State Resistance : RDS(on) [Ω] Static Drain-Source On-State Resistance : RDS(on) [Ω] 10 Drain-Source Voltage : VDS [V] 0.1 0.3 0.25 ID=10A 0.2 0.15 ID=5A 0.1 0.05 0.01 0.01 0 0.1 1 10 100 -50 Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. -25 0 25 50 75 100 125 150 Channel Temperature : Tch [℃] 3/6 2011.10 - Rev.A Data Sheet RCD100N20 Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Source Current vs. Source-Drain Voltage 10 100 VDS=10V pulsed VGS=0V pulsed Source Current : Is [A] Forward Transfer Admittance Yfs [S] 10 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1 0.1 0.01 0.01 0.01 0.1 1 10 100 0.0 0.5 Drain Current : ID [A] 1.0 Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.10 Switching Characteristics 0.3 10000 0.25 VDD≒100V VGS=10V RG=10Ω Ta=25°C Pulsed 1000 Switching Time : t [ns] Static Drain-Source On-State Resistance RDS(on) [Ω] Ta=25°C Pulsed ID=10A ID=5.0A 0.2 tf 100 td(off) td(on) 10 0.15 tr 1 0.1 0 2 4 6 8 10 12 14 16 18 0.01 20 0.1 Gate-Source Voltage : VGS [V] 1 10 100 Drain Current : ID [A] Fig.11 Dynamic Input Characteristics Fig.12 Typical Capacitance vs. Drain-Source Voltage 10000 15 Ta=25°C f=1MHz VGS=0V Ta=25°C VDD=100V ID=10A Pulsed 1000 10 Capacitance : C [pF] Gate-Source Voltage : VGS [V] 1.5 Source-Drain Voltage : VSD [V] 5 Ciss 100 Coss Crss 10 1 0 0 5 10 15 20 25 30 35 0.01 40 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.1 1 10 100 1000 Drain-Source Voltage : VDS [V] Total Gate Charge : Qg [nC] 4/6 2011.10 - Rev.A Data Sheet RCD100N20 Fig.14 Normalized Transient Thermal Resistance v.s. Pulse Width Fig.13 Maximum Safe Operating Area 100 Normalized Transient Thermal Resistance : r（t） 10 Drain Current : ID [ A ] 10 PW = 100μs Operation in this area is limited by RDS(on) (VGS = 10V) 1 PW = 1ms 0.1 PW = 10ms Ta=25°C Single Pulse Mounted on a ceramic board. （30mm × 30mm × 0.8mm) 0.01 0.1 1 10 100 1 0.1 0.01 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 0.001 Rth(ch-a)=43.5°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.0001 0.0001 1000 Drain-Source Voltage : VDS [ V ] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Ta=25°C Single Pulse 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) 5/6 2011.10 - Rev.A Data Sheet RCD100N20 Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) ton Fig.1-1 Switching Time Measurement Circuit 90% td(off) tr tf toff Fig.1-2 Switching Waveforms VG VGS ID VDS RL Qg VGS D.U.T. IG(Const.) Qgs Qgd VDD Charge Fig.2-2 Gate Charge Waveform Fig.2-1 Gate Charge Measurement Circuit VGS IAS VDS V(BR)DSS D.U.T. RG L VDD IAS VDD EAS = Fig.3-1 Avalanche Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 2 L IAS 2 V(BR)DSS V(BR)DSS - VDD Fig.3-2 Avalanche Waveform 6/6 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A