RB050PS-30 Diodes Schottky barrier diode RB050PS-30 zExternal dimensions (Unit : mm) (6) zLand size figure 0.5±0.05 (7) (8) (5) 1pin mark φ1.4 1.5 0.15 6.6 4.56 ① 0.5 zFeatures 1) High power mold type. (TSOP8) 2) Low IR 3) High reliability 4.7 0～0.1 6±0.1 5±0.1 zApplications Rectifying small power (2) (3) (4) 1.27 0.635 ＋0.1 0.22 －0.05 1.1 (1) 0.5±0.05 1.1 ＋0.1 0.4－0.05 0.9±0.05 1.27 0.65 0.75 3.1 TSOP8 zStructure 0.15 0.01±0.01 1.25 3.9 0.2±0.03 0.9±0.03 0.3 5±0.1 ROHM : TSOP8 zConstruction Silicon epitaxial planar ① Manufacture Date zTaping dimensions (Unit : mm) 2.0±0.05 8.0±0.1 φ1.55±0.1 0 0.37±0.1 12.0±0.3 5.5±0.05 9.5±0.1 5.4±0.2 1.75±0.05 4.0±0.1 1PIN φ1.55±0.05 6.4±0.1 8.0±0.1 1.2±0.2 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz・1cyc) Junction temperature Storage temperature (*1)Tc=100℃max Limits 30 30 3 35 150 -40 to +150 Symbol VRM VR Io IFSM Tj Tstg Unit V V A A ℃ ℃ zElectrical characteristic (Ta=25°C) Parameter Forward voltage Symbol VF Min. - Typ. - Max. 0.425 Unit V Reverse current IR - - 200 µA Conditions IF=3.0A VR=30V Rev.A 1/3 RB050PS-30 Diodes zElectrical characteristic curves Ta=150℃ Ta=125℃ 10000 Ta=125℃ f=1MHz 100000 Ta=75℃ 1 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=150℃ 1000000 Ta=25℃ 0.1 Ta=-25℃ 0.01 10000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 Ta=75℃ 1000 Ta=25℃ 100 10 Ta=-25℃ 1 1000 100 0.1 0.001 0.01 0 100 200 300 400 500 600 10 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10 15 20 25 30 0 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 430 410 400 AVE:404.1mV 390 Ta=25℃ VR=30V n=30pcs 250 30 200 150 100 AVE:39.2uA Ta=25℃ f=1MHz VR=0V n=10pcs 1690 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 420 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1700 300 Ta=25℃ IF=3A n=30pcs REVERSE CURRENT:IR(uA) FORWARD VOLTAGE:VF(mV) 5 1680 1670 1660 1650 1640 1630 AVE:1639.8pF 1620 50 1610 380 VF DISPERSION MAP IR DISPERSION MAP 1000 8.3ms 150 100 AVE:105.0A Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 AVE:20.4ns Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc Ifsm 200 RESERVE RECOVERY TIME:trr(ns) 250 50 8.3ms 10 5 10 1 Ifsm t 100 2 Mounted on epoxy board IM=100mA IF=1.5A 1.5 100 1ms time Rth(j-a) 300us 10 Rth(j-c) 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.001 D=1/2 Sin(θ＝180) 1 DC 0.5 1 10 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 1000 1 10 trr DISPERSION MAP IFSM DISRESION MAP 1000 8.3ms 1cyc 100 15 0 0 PEAK SURGE FORWARD CURRENT:IFSM(A) Ct DISPERSION MAP 30 300 PEAK SURGE FORWARD CURRENT:IFSM(A) 1600 0 0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 1 2 3 4 5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS Rev.A 2/3 RB050PS-30 Diodes 10 0A 8 4 Sin(θ＝180) AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:P R (W) 10 3 D=1/2 DC 2 1 Io 0V 6 DC 4 T D=t/T VR=15V Tj=150℃ D=1/2 Sin(θ＝180) 2 0 10 20 REVERSE VOLTAGE:VR(V) VR-P R CHARACTERISTICS 30 0V VR t 6 T DC 4 D=t/T VR=15V Tj=150℃ D=1/2 Sin(θ＝180) 2 0 0 0 Io 0A 8 VR t AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 5 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curve (Io-Ta) 150 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curve (Io-Tc) 30 No break at 30kV ELECTROSTATIC DDISCHARGE TEST ESD(KV) 25 20 AVE:23.8kV 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1