Planar Back (Tunnel) Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized for detector operation and offered in five nominal values with varying degrees of sensitivity and video impedance. The back detector is generally operated with zero bias and is known for its exellent temperature stability and fast video rise times. • • • • Zero bias operation Exellent temperature stability Low Video Impedance Screening per MIL-PRF-19500 and MIL-PRF-35834 available. Absolute Maximum Ratings Parameters Rating Input Power Operating Temperature Storage Temperature Soldering Temperature +14 dBm CW or Pulsed in a tuned detector -65 °C to +110 °C -65 °C to +125 °C Chip Packaged See chip assembly instructions on page 8 +230 °C for 5 seconds (must be hand soldered) Chip Electrical Specifications, TA = 25 °C CJ γ RV I P / IV VR VF MIN μA MAX μA MAX pF TYP mV / mW TYP Ω MIN MIN mV MAX mV Package MBD1057-C18 100 200 0.30 1,000 180 2.5 420 135 C18 MBD2057-C18 200 300 0.30 750 130 2.5 410 130 C18 MBD3057-C18 300 400 0.30 500 80 2.5 400 125 C18 MBD4057-C18 400 500 0.30 275 65 2.5 400 120 C18 MBD5057-C18 500 600 0.30 250 60 2.5 400 110 C18 IR = 500 μA I F = 3 mA IP Model Test Conditions Revision Date: 12/01/05 VR = V V F= 100 MHz PIN = -20 dBm R L = 10 KΩ F = 10 GHz Planar Back (Tunnel) Diodes MBD Series Back Diode Perameters Diode Equivalent Circuit I 3mA LS PACKAGE VR Vv IV VF Ip Rj Cp V Cj RS 500μA RV≅RS + Rj CT=Cp + Cj @ 100 MHz Package Electrical Specifications, TA = 25 °C CT γ TYP mV / mW RV TYP Ω I P / IV MIN VR MIN mV VF MAX mV Package μA MAX pF 100 200 0.40 1,000 180 2.5 420 135 E28 / 28X 100 200 0.50 1,000 180 2.5 420 135 H20 MBD1057-T54 100 200 0.55 1,000 180 2.5 420 135 T54 MBD1057-T80 100 200 0.65 1,000 180 2.5 420 135 T80 MBD2057-E28 / 28X 200 300 0.40 750 130 2.5 410 130 E28 / 28X MBD2057-H20 200 300 0.50 750 130 2.5 410 130 H20 MBD2057-T54 200 300 0.55 750 130 2.5 410 130 T54 MBD2057-T80 200 300 0.65 750 130 2.5 410 130 T80 MBD3057-E28 / 28X 300 400 0.45 500 80 2.5 400 125 E28 / 28X MBD3057-H20 300 400 0.55 500 80 2.5 400 125 H20 MBD3057-T54 300 400 0.60 500 80 2.5 400 125 T54 MBD3057-T80 300 400 0.70 500 80 2.5 400 125 T80 MBD4057-E28 / 28X 400 500 0.50 275 65 2.5 400 120 E28 / 28X MBD4057-H20 400 500 0.60 275 65 2.5 400 120 H20 MBD4057-T54 400 500 0.65 275 65 2.5 400 120 T54 MBD4057-T80 400 500 0.75 275 65 2.5 400 120 T80 MBD5057-E28 / 28X 500 600 0.55 250 60 2.5 400 110 E28 / 28X MBD5057- H20 500 600 0.65 250 60 2.5 400 110 H20 MBD5057- T54 500 600 0.70 250 60 2.5 400 110 T54 MBD5057- T80 500 600 0.80 250 60 2.5 400 110 T80 IR = 500 μA I F = 3 mA IP Model MIN μA MAX MBD1057-E28 / 28X MBD1057-H20 Test Conditions 2 Revision Date: 12/01/05 VR = V V F= 100 MHz PIN = -20 dBm R L = 10 KΩ F =10 GHz Aeroflex / Metelics, Inc. www.aeroflex-metelics.com Planar Back (Tunnel) Diodes MBD Series Typical Performance, TA = 25 °C Video Resistance vs. Input Power 200 F =10 GHz MBD2057 Rv (Ω) 150 100 MBD5057 50 0 _ 30 _ 20 _ 10 + 10 0 PIN (dBm) Video Impedance & Sensitivity vs. Peak Current 1000 200 F = 10 GHz RL = 10 KΩ PIN = -20 dBm 150 γ 100 500 RV (Ω) γ (mV/mW) 750 RV 250 50 0 0 0 100 300 200 400 500 I P (μA) Aeroflex / Metelics, Inc. www.aeroflex-metelics.com 3 Revision Date: 12/01/05 Planar Back (Tunnel) Diodes MBD Series Typical Performance, TA = 25 °C, Output Voltage Vs. Input Power 300 200 F = 10 GHz RL = 10KΩ 100 MBD1057 MBD2057 VOUT (mV) 10 MBD3057 MBD4057 MBD5057 1 0.1 –40 –35 –30 –25 –20 –15 –10 –5 PIN (dBm) 10 GHz RF Detector Test Circuit TUNER 4 Revision Date: 12/01/05 Aeroflex / Metelics, Inc. www.aeroflex-metelics.com 0 5 10 Planar Back (Tunnel) Diodes MBD Series Typical Performance, TA = 25 °C, MDB2057 Output Voltage vs. Input Power 300 RL = 10KΩ 200 RL= 1KΩ F = 10 GHz RL = 500Ω 100 RL = 100Ω RL = 50Ω RL = 10Ω VOUT (mV) 10 1 0.1 –40 –35 –30 –25 –20 –15 –10 –5 0 5 10 PIN (dBm) Output Voltage vs. Temperature 300 RL = 10KΩ 200 + 100° C – 55° C 100 F = 10 GHz VOUT (mV) RL = 100Ω 10 1 0.1 –40 –35 –30 –25 –20 –15 –10 –5 0 5 10 PIN (dBm) Aeroflex / Metelics, Inc. www.aeroflex-metelics.com 5 Revision Date: 12/01/05 Planar Back (Tunnel) Diodes MBD Series Typical Performance, TA = 25 °C, MDB5057 Output Voltage vs. Input Power 300 RL= 1KΩ 200 RL = 10KΩ F = 10 GHz RL = 100Ω 100 RL = 50Ω RL = 10Ω VOUT (mV) 10 1 0.1 –40 –35 –30 –25 –20 –15 –10 –5 0 5 10 PIN (dBm) Output Voltage vs Temperature 300 200 + 100 °C – 55 °C RL = 10KΩ 100 RL = 100KΩ RL = 10Ω F = 10 GHz VOUT (mV) 10 1 0.1 –40 –35 –30 –25 –20 –15 –10 –5 PIN (dBm) 6 Revision Date: 12/01/05 Aeroflex / Metelics, Inc. www.aeroflex-metelics.com 0 5 10 Planar Back (Tunnel) Diodes MBD Series Outline Drawings C18 0805-2 (non-hermetic) 85 [2.159] 75 [1.905] Epoxy Pad 1 Anode Pad 4 Pls 55 [1.397] 45 [1.143] 1 [0.025] 16 [0.406] 14 [0.356] SQ. Bond only on crosshatched area Pad 2 Pad 3 50 [1.270] Max. Cathode Dot Pad 4 6 [0.152] 4 [0.102] Gold Metalization 33 [0.838] 27 [0.686] 16 [0.406] 12 [0.305] Cathode Bottom View 40 [1.016] Min. E28 (non-hermetic) E28X (non-hermetic) Cathode Dot 178 [4.521] 162 [4.115] Cut lead is Cathode 100 [2.540] Min. 2 Pls Ceramic 25 [0.635] 15 [0.381] 50 [1.270] 40 [1.016] 50 [1.270] Max. 25 [0.635] 15 [0.381] 95 [2.413] 85 [2.159] 95 [2.413] 85 [2.159] Epoxy Ceramic Epoxy 50 [1.270] 40 [1.016] 15 [0.381] 8 [0.203] 30 [0.762] Max. 5 [0.127] 3 [0.076] 20 [0.508] 10 [0.254] 14 [0.356] Max. 30 [0.762] 20 [0.508] 8 [0.203] 4 [0.102] Ceramic 102 [2.591] Dia 81 [2.057] H20 (hermetic) 23 [0.584] 17 [0.432] Cut lead is Cathode 104 [2.642] 92 [2.337] Square 130 [3.302] Min. 2 Pls 8 [0.203] 4 [0.102] 6 [0.152] 3 [0.076] 35 [0.889] 25 [0.635] Aeroflex / Metelics, Inc. www.aeroflex-metelics.com 7 Revision Date: 12/01/05 Planar Back (Tunnel) Diodes MBD Series Outline Drawings (Continued) T80 (hermetic) T54 (hermetic) 86 [2.184] Dia. 78 [1.981] 124 [3.150] Dia. 118 [2.997] 27 [0.686] Max. Ceramic Body 65 [1.651] 55 [1.397] 12 [0.305] 10 [0.254] Ceramic Body 44 [1.118] 34 [0.864] Cathode (T54) Cathode (T80) 52 [1.321] Dia. 48 [1.219] 83 [2.108] Dia. 77 [1.956] CHIP ASSEMBLY The germanium planar back (tunnel) diode is sensitive to mechanical pressure and high temperatures. Die attach: Conductive epoxy only with maximum curing temperatue of +125°C Wire Bond:0.7 mil Gold wire and thermo-compression wedge bond within the following: Stage Temperature: +155 °C maximum for 20 seconds max Tip Temperature: +160 °C maximum Bonding Pressure: 20 grams maximum Bonding is performed on the larger diameter offset bonding pad (see figure 1) and not over the junction. JUNCTION .0007” GOLD BOND WIRE THERMOCOMPRESSION WEDGE BOND figure 1 Aeroflex / Metelics Aeroflex Microelectronic Solutions 975 Stewart Drive, Sunnyvale, CA 94085 TEL: 408-737-8181 Fax: 408-733-7645 www.aeroflex-metelics.com [email protected] Aeroflex / Metelics, Inc. reserves the right to make changes to any products and services herein at any time without notice. Consult Aeroflex or an authorized sales representative to verify that the information in this data sheet is current before using this product. Aeroflex does not assume any responsibility or liability arising out of the application or use of any product or service described herein, except as expressly agreed to in writing by Aeroflex; nor does the purchase, lease, or use of a product or service from Aeroflex convey a license under any patent rights, copyrights, trademark rights, or any other of the intellectual rights of Aeroflex or of third parties. Copyright 2003 Aeroflex / Metelics. All rights reserved. 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